FDIP Search Results

1N914

Abstract: M27256 LABLES INFORMATION
Contextual Info: M27256 NMOS 256K 32K x 8 UV EPROM FAST ACCESS TIME: 170ns EXTENDED TEMPERATURE RANGE SINGLE 5V SUPPLY VOLTAGE LOW STANDBY CURRENT: 40mA max TTL COMPATIBLE DURING READ and PROGRAM 28 FAST PROGRAMMING ALGORITHM 1 ELECTRONIC SIGNATURE FDIP28W (F) PROGRAMMING VOLTAGE: 12V

1N914

Abstract: M27256 Electrolytic Capacitors - Quality flowchart
Contextual Info: M27256 NMOS 256K 32K x 8 UV EPROM FAST ACCESS TIME: 170ns EXTENDED TEMPERATURE RANGE SINGLE 5V SUPPLY VOLTAGE LOW STANDBY CURRENT: 40mA max TTL COMPATIBLE DURING READ and PROGRAM 28 FAST PROGRAMMING ALGORITHM 1 ELECTRONIC SIGNATURE FDIP28W (F) PROGRAMMING VOLTAGE: 12V

M27C160

Abstract: PDIP42 PLCC44 Q15A SDIP42
Contextual Info: M27C160 16 Mbit 2Mb x 8 or 1Mb x 16 UV EPROM and OTP EPROM • 5V ± 10% SUPPLY VOLTAGE in READ OPERATION ■ ACCESS TIME: 50ns ■ BYTE-WIDE or WORD-WIDE CONFIGURABLE 42 42 ■ 16 Mbit MASK ROM REPLACEMENT 1 ■ LOW POWER CONSUMPTION FDIP42W (F) 1 PDIP42 (B)

Contextual Info: M27C202 2 Mbit 128Kb x 16 UV EPROM and OTP EPROM • 5V ± 10% SUPPLY VOLTAGE in READ OPERATION ■ ACCESS TIME: 45ns ■ LOW POWER CONSUMPTION: - Active Current 50mA at 5MHz - Standby Current 1OOjaA ■ PROGRAMMING VOLTAGE: 12.7 5 V ± 0.25V FDIP40W (F)

Contextual Info: M27C2001 2 Mbit 256Kb x 8 UV EPROM and OTP EPROM • 5V ± 10% SUPPLY VOLTAGE in READ OPERATION ■ FAST ACCESS TIME: 55ns ■ LOW POWER CONSUMPTION: - Active Current 30mA at 5MHz - Standby Current 1OOjaA ■ PROGRAMMING VOLTAGE: 12.7 5 V ± 0.25V FDIP32W (F)

FDIP24W

Abstract: M27128A M2716 M27256 M2732A M27512 M2764A M27C256B M27C64A M29F040
Contextual Info: MEMORIES and SMARTCARD PRODUCTS NON VOLATILE MEMORIES UV & OTP EPROM, 5V Operation Size References Description Package 16 Kb M2716 16 Kb x8 , 350 - 450ns, NMOS FDIP24W 32 Kb M2732A 32 Kb (x8), 200 - 450ns, NMOS FDIP24W M2764A 64 Kb (x8), 180 - 450ns, NMOS

Contextual Info: M27V160 16 Mbit 2Mb x8 or 1Mb x16 Low Voltage UV EPROM and OTP EPROM • 3V to 3.6V LOW VOLTAGE in READ OPERATION ■ ACCESS TIME: 100ns ■ BYTE-WIDE or WORD-WIDE CONFIGURABLE 42 42 ■ 16 Mbit MASK ROM REPLACEMENT 1 ■ LOW POWER CONSUMPTION FDIP42W (F)

M27512

Abstract: 1N914
Contextual Info: M27512 NMOS 512K 64K x 8 UV EPROM FAST ACCESS TIME: 200ns EXTENDED TEMPERATURE RANGE SINGLE 5V SUPPLY VOLTAGE LOW STANDBY CURRENT: 40mA max TTL COMPATIBLE DURING READ and PROGRAM 28 FAST PROGRAMMING ALGORITHM 1 ELECTRONIC SIGNATURE FDIP28W (F) PROGRAMMING VOLTAGE: 12V

Contextual Info: M27V801 LOW VOLTAGE 8 Megabit 1Meg x 8 UV EPROM and OTP EPROM LOW VOLTAGE READ OPERATION: 3V to 5.5V FAST ACCESS TIME: 120ns LOW POWER “CMOS” CONSUMPTION: – Active Current 35mA – Standby Current 100µA PROGRAMMING VOLTAGE: 12.75V 32 1 FDIP32W (F)

FDIP24W

Abstract: M2732A B2732A
Contextual Info: M2732A NMOS 32K 4K x 8 UV EPROM DATA BRIEFING FAST ACCESS TIME: 200ns EXTENDED TEMPERATURE RANGE SINGLE 5V SUPPLY VOLTAGE LOW STANDBY CURRENT: 35mA max INPUTS and OUTPUTS TTL COMPATIBLE DURING READ and PROGRAM COMPLETELY STATIC 24 1 FDIP24W (F) DESCRIPTION

Q15A

Abstract: M27C800 PDIP42 PLCC44
Contextual Info: M27C800 8 Mbit 1Mb x8 or 512Kb x16 UV EPROM and OTP EPROM • 5V ± 10% SUPPLY VOLTAGE in READ OPERATION ■ ACCESS TIME: 50ns ■ BYTE-WIDE or WORD-WIDE CONFIGURABLE ■ 8 Mbit MASK ROM REPLACEMENT ■ LOW POWER CONSUMPTION 42 42 1 1 FDIP42W (F) PDIP42 (B)

M27C64A

Abstract: 1N914 M2764A
Contextual Info: M2764A NMOS 64K 8K x 8 UV EPROM FAST ACCESS TIME: 180ns EXTENDED TEMPERATURE RANGE SINGLE 5V SUPPLY VOLTAGE LOW STANDBY CURRENT: 35mA max 28 TTL COMPATIBLE DURING READ and PROGRAM FAST PROGRAMMING ALGORITHM 1 ELECTRONIC SIGNATURE FDIP28W (F) PROGRAMMING VOLTAGE: 12V

SGS M2732A Eprom

Abstract: 1N914 FDIP24W M2732A
Contextual Info: M2732A NMOS 32K 4K x 8 UV EPROM FAST ACCESS TIME: 200ns EXTENDED TEMPERATURE RANGE SINGLE 5V SUPPLY VOLTAGE LOW STANDBY CURRENT: 35mA max INPUTS and OUTPUTS TTL COMPATIBLE DURING READ and PROGRAM 24 1 COMPLETELY STATIC FDIP24W (F) DESCRIPTION The M2732A is a 32,768 bit UV erasable and

M27C256

Abstract: NM27C256B
Contextual Info: M27C256B 256 Kbit 32Kb x 8 UV EPROM and OTP EPROM Feature summary • 5V ± 10% supply voltage in Read operation ■ Access time: 45ns ■ Low power consumption: – Active Current 30mA at 5MHz – Standby Current 100µA 1 u d o FDIP28W (F) ■ Programming voltage: 12.75V ± 0.25V

M27V800

Abstract: PDIP42 PLCC44 Q15A
Contextual Info: M27V800 8 Mbit 1Mb x8 or 512Kb x16 Low Voltage UV EPROM and OTP EPROM • LOW VOLTAGE READ OPERATION: 3V to 3.6V ■ FAST ACCESS TIME: 100ns ■ BYTE-WIDE or WORD-WIDE CONFIGURABLE ■ 8 Mbit MASK ROM REPLACEMENT ■ LOW POWER CONSUMPTION 42 42 1 1 FDIP42W (F)

M27C800

Abstract: PDIP42 PLCC44 Q15A
Contextual Info: M27C800 8 Mbit 1Mb x8 or 512Kb x16 UV EPROM and OTP EPROM • 5V ± 10% SUPPLY VOLTAGE in READ OPERATION ■ ACCESS TIME: 50ns ■ BYTE-WIDE or WORD-WIDE CONFIGURABLE ■ 8 Mbit MASK ROM REPLACEMENT ■ LOW POWER CONSUMPTION 42 42 1 1 FDIP42W (F) PDIP42 (B)

M27C322

Abstract: PDIP42 Q0-Q15 SDIP42
Contextual Info: M27C322 32 Mbit 2Mb x16 UV EPROM and OTP EPROM • 5V ± 10% SUPPLY VOLTAGE in READ OPERATION ■ ACCESS TIME: 80ns ■ WORD-WIDE CONFIGURABLE ■ 32 Mbit MASK ROM REPLACEMENT ■ LOW POWER CONSUMPTION – Active Current 50mA at 5MHz 42 42 1 1 FDIP42W (F)

1N914

Abstract: M2764A M27C64A
Contextual Info: M2764A NMOS 64K 8K x 8 UV EPROM FAST ACCESS TIME: 180ns EXTENDED TEMPERATURE RANGE SINGLE 5V SUPPLY VOLTAGE LOW STANDBY CURRENT: 35mA max 28 TTL COMPATIBLE DURING READ and PROGRAM FAST PROGRAMMING ALGORITHM 1 ELECTRONIC SIGNATURE FDIP28W (F) PROGRAMMING VOLTAGE: 12V

1N914

Abstract: M27256 thomson 7895
Contextual Info: M27256 NMOS 256K 32K x 8 UV EPROM FAST ACCESS TIME: 170ns EXTENDED TEMPERATURE RANGE SINGLE 5V SUPPLY VOLTAGE LOW STANDBY CURRENT: 40mA max TTL COMPATIBLE DURING READ and PROGRAM 28 FAST PROGRAMMING ALGORITHM 1 ELECTRONIC SIGNATURE FDIP28W (F) PROGRAMMING VOLTAGE: 12V

1N914

Abstract: M27128A
Contextual Info: M27128A NMOS 128K 16K x 8 UV EPROM FAST ACCESS TIME: 200ns EXTENDED TEMPERATURE RANGE SINGLE 5 V SUPPLY VOLTAGE LOW STANDBY CURRENT: 40mA max TTL COMPATIBLE DURING READ and PROGRAM 28 FAST PROGRAMMING ALGORITHM 1 FDIP28W (F) ELECTRONIC SIGNATURE PROGRAMMING VOLTAGE: 12V

1N914

Abstract: M2764A M27C64A M2764AS
Contextual Info: M2764A NMOS 64K 8K x 8 UV EPROM FAST ACCESS TIME: 180ns EXTENDED TEMPERATURE RANGE SINGLE 5V SUPPLY VOLTAGE LOW STANDBY CURRENT: 35mA max 28 TTLCOMPATIBLEDURING READ andPROGRAM FAST PROGRAMMING ALGORITHM 1 ELECTRONIC SIGNATURE FDIP28W (F) PROGRAMMING VOLTAGE: 12V

M27C1001

Contextual Info: M27C1001 1 Mbit 128 Kbit x 8 UV EPROM and OTP EPROM Features • 5v ± 10% Supply Voltage in Read Operation ■ Access Time: 35ns ■ Low Power Consumption: – Active Current: 30 mA at 5 MHz – Standby Current: 100 µA 32 32 FDIP32W (F) ■ Programming Voltage: 12.75V ± 0.25V

SGS M2732A Eprom

Abstract: M2732A sgs M2732a FDIP24W B2732 AI00781
Contextual Info: M2732A 32 Kbit 4Kb x 8 NMOS UV EPROM DATA BRIEFING FAST ACCESS TIME: 200ns EXTENDED TEMPERATURE RANGE SINGLE 5V SUPPLY VOLTAGE LOW STANDBY CURRENT: 35mA max INPUTS and OUTPUTS TTL COMPATIBLE DURING READ and PROGRAM COMPLETELY STATIC 24 1 FDIP24W (F) DESCRIPTION

Contextual Info: M27C2001 2 Mbit 256Kb x 8 UV EPROM and OTP EPROM Features • 5V ± 10% supply voltage in Read operation ■ Access time: 55ns ■ Low power consumption: – Active Current 30mA at 5MHz – Standby Current 100µA FDIP32W (F) Programming voltage: 12.75V ± 0.25V