FCX6 Search Results

Contextual Info: Transistors SMD Type Product specification FCX658A Features 400 Volt VCEO 0.5 Amp continuous current Ptot=1 Watt Optimised hfe characterised upto 200mA Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-Base Voltage Parameter VCBO 400 V Collector-Emitter Voltage

Contextual Info: SOT89 NPN SILICON POWER SWITCHING TRANSISTOR FCX617 ISSSU E 1 - NOVEMBER 1998 FEATU RES * 2W POWER D IS S IP A T IO N * * * * 12A Peak Pu lse Current Exce lle n t H FE C h a ra cte ristics up to 12 A m p s Extre m e ly Lo w S a tu ra tio n V o lta ge E.g. 8 m v T y p .

NPN SOT23-6

Abstract: ZDT1049 DUAL NPN SOT23-6 zdt6790 fzt849 WDFN3 BCP6825 ZXTBM322 sot223 transistor sot23
Contextual Info: Zetex Device BCP6825 BCP6925 BCV27 BCW66H BCW68H BCX17 BCX19 BCX6825 BCX6916 BCX6925 FCX1047A FCX1051A FCX1147A FCX1149A FCX1151A FCX491A FCX589 FCX591A FCX617 FCX619 FCX688B FCX690B FCX717 FCX718 FCX789A FCX790A FMMT449 FMMT489 FMMT491A FMMT549 FMMT549A FMMT589

100 Amp current 1300 volt diode

Abstract: FCX690B FCX790A 40X40X0 DSA003687
Contextual Info: SOT89 NPN SILICON POWER SWITCHING TRANSISTOR FCX690B ISSSUE 1 - MARCH 1999 FEATURES * 2W POWER DISSIPATION * * * 6A Peak Pulse Current Gain of 400 @IC=1Amp Very Low Saturation Voltage Complimentary Type Partmarking Detail - C E FCX790A 690 C B ABSOLUTE MAXIMUM RATINGS.

FCX619

Abstract: FCX720 PARTMARKING 619 FCX619 equivalent
Contextual Info: SOT89 NPN SILICON POWER SWITCHING TRANSISTOR FCX619 ISSUE 6 - JANUARY 2003 FEATURES * 2W POWER DISSIPATION * * * * * 6A PEAK PULSE CURRENT EXCELLENT hFE CHARACTERISTICS UP TO 6 Amps EXTREMELY LOW SATURATION VOLTAGE e.g. 13mV typ. EXTREMELY LOW EQUIVALENT ON-RESISTANCE;

FCX749

Abstract: 3emitter bst52 FCX688B FCX689B FCX690B FCX692B FCX694B FCX696B FCX789A
Contextual Info: SOT89 HIGH GAIN TRANSISTORS Pinout: 1-Base, 2&4-Collector, 3-Emitter v CE say Max h :E Type v CBO V v CEO V ^C(cont mA mW FCX696B 250 FCX694B 120 250 500 1500 120 500 1500 FCX692B FCX690B 70 70 2000 1500 400/- 45 45 2000 1500 400/- FCX689B 20 20 3000 1500

Contextual Info: SOT89 NPN SILICON POWER SWITCHING TRANSISTOR FCX617 ISSSUE 1 - NOVEMBER 1998 FEATURES * 2W POWER DISSIPATION * * * * 12A Peak Pulse Current Excellent HFE Characteristics up to 12 Amps Extremely Low Saturation Voltage E.g. 8mv Typ. Extremely Low Equivalent On-resistance;

Contextual Info: SOT89 NPN SILICON POWER SWITCHING TRANSISTOR FCX688B ISSSUE 1 - NOVEMBER 1998 FEATURES * 2W POWER DISSIPATION * * * 10A Peak Pulse Current Excellent HFE Characteristics up to 10 Amps Extremely Low Saturation Voltage Complimentary Type Partmarking Detail -

Contextual Info: Transistors IC SMD Type Product specification FCX619 Features 2W power dissipation. 6A peak pulse current. Excellent HFE characteristics up to 6 amps. Extremely low saturation voltage E.g. 13mv Typ. Extremely low equivalent on-resistance. RCE sat 87mÙ at 2.75A.

Contextual Info: Transistors IC SMD Type Product specification FCX617 SOT-89 Features Unit: mm +0.1 4.50-0.1 +0.1 1.50-0.1 +0.1 1.80-0.1 Excellent HFE characteristics up to 12 amps. Extremely low saturation voltage E.g. 8mv Typ. +0.1 0.53-0.1 +0.1 0.48-0.1 RCE sat 50mÙ at 3A.

smd marking 619

Abstract: npn smd 2a transistor smd 6a MARKING SMD npn TRANSISTOR 1a FCX619 transistor marking 6A 6a smd transistor
Contextual Info: Transistors SMD Type NPN Silicon Power Switching Transistor FCX619 Features 2W power dissipation. 6A peak pulse current. Excellent HFE characteristics up to 6 amps. Extremely low saturation voltage E.g. 13mv Typ. Extremely low equivalent on-resistance. RCE sat 87mÙ at 2.75A.

MARKING SMD npn TRANSISTOR 1a

Abstract: smd transistor marking br MARKING SMD npn TRANSISTOR 690 transistor Ic 1A datasheet NPN transistor smd 6a 9v smd transistor npn smd 2a smd transistor MARKING 2A npn SMD TRANSISTOR MARKING 2A smd transistor marking 1A
Contextual Info: Transistors SMD Type NPN Silicon Power Switching Transistor FCX690B Features 2W power dissipation. 6A peak pulse current. Gain of 400 @IC=1Amp. Very low saturation voltage. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage

Contextual Info: FCX692B Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)70 V(BR)CBO (V)70 I(C) Max. (A)2 Absolute Max. Power Diss. (W)1.5 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.400 h(FE) Max. Current gain.

Contextual Info: FCX696B Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)250 V(BR)CBO (V)250 I(C) Max. (A)500m Absolute Max. Power Diss. (W)1.5 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V).25 @I(C) (A) (Test Condition)200m

Contextual Info: FCX690B Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)45 V(BR)CBO (V)45 I(C) Max. (A)2 Absolute Max. Power Diss. (W)1.5 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.400 h(FE) Max. Current gain.

FCX653

Contextual Info: FCX653 SOT89 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR FEATURES * FAST SWITCHING. * LOW SATURATION VOLTAGE. * H fe UP TO 6A PULSED. * 2A Ic CONTINUOUS. * COM PLEMENTARY TYPE - FCX753. PARTMARKING DETAILS - N8 ABSOLUTE MAXIMUM RATINGS PARAMETER Collector-Base Voltage

FCX749

Contextual Info: FCX749 SOT89 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR FEATU RES * * * F A S T SW ITCH IN G . LO W SA T U R A T IO N V O LTA G E . H fe UP TO 6A P U LSED . * * 2 A lc CO N TIN U O U S. CO M P LEM EN TA R Y T Y P E - FCX649. PARTM ARKIN G D E T A ILS - N6

FCX619

Contextual Info: PART OBSOLETE - USE FCX619 2DD2150R OBSOLETE – PART DISCONTINUED NPN SURFACE MOUNT TRANSISTOR Features Mechanical Data • • • • • • • • Epitaxial Planar Die Construction Ideally Suited for Automated Assembly Processes Ideal for Medium Power Switching or Amplification Applications

Contextual Info: SOT89 NPN SILICON POWER SWITCHING TRANSISTOR FCX690B ISSSUE 1 - MARCH 1999 FEATURES * 2W POWER DISSIPATION * * * 6A Peak Pulse Current Gain of 400 @IC=1Amp Very Low Saturation Voltage Complimentary Type Partmarking Detail - C E FCX790A 690 C B ABSOLUTE MAXIMUM RATINGS.

Contextual Info: SOT89 NPN SILICON POWER SWITCHING TRANSISTOR FCX619 ISSUE 6 - JANUARY 2003 FEATURES * 2W POWER DISSIPATION * * * * * 6A PEAK PULSE CURRENT EXCELLENT hFE CHARACTERISTICS UP TO 6 Amps EXTREMELY LOW SATURATION VOLTAGE e.g. 13mV typ. EXTREMELY LOW EQUIVALENT ON-RESISTANCE;

FCX658A

Abstract: ic marking 57
Contextual Info: Transistors SMD Type NPN Silicon Planar Medium Power High Voltage Transistor FCX658A Features 400 Volt VCEO 0.5 Amp continuous current Ptot=1 Watt Optimised hfe characterised upto 200mA Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-Base Voltage

ztx605

Abstract: FCX605 FCX605TA SOT223
Contextual Info: FCX605 120V NPN SILICON HIGH VOLTAGE DARLINGTON TRANSISTOR SUMMARY VCEO=120V; VCE sat = 1V; IC= 1A DESCRIPTION This new NPN Darlington transistor provides users with very efficeint performance combining low VCE (sat) and very high Hfe to give extremely low

Contextual Info: Transistors IC SMD Type Product specification FCX690B Features 2W power dissipation. 6A peak pulse current. Gain of 400 @IC=1Amp. Very low saturation voltage. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 45 V Collector-emitter voltage

fcx720

Abstract: PARTMARKING 619 FCX619 DSA003686
Contextual Info: SOT89 NPN SILICON POWER SWITCHING TRANSISTOR FCX619 ISSUE 5 - SEPTEMBER 1999 FEATURES * 2W POWER DISSIPATION * * * * * 6A PEAK PULSE CURRENT EXCELLENT hFE CHARACTERISTICS UP TO 6 Amps EXTREMELY LOW SATURATION VOLTAGE e.g. 13mV typ. EXTREMELY LOW EQUIVALENT ON-RESISTANCE;