FBGA 9 X 12 PACKAGE TRAY Search Results

K8D3216UBC-pi07

Abstract: K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm
Contextual Info: Product Selection Guide Memory and Storage April 2005 MEMORY AND STORAGE SECTION A DRAM DDR2 SDRAM DDR SDRAM SDRAM RDRAM NETWORK DRAM MOBILE SDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND, OneNAND, NOR FLASH NAND FLASH ORDERING INFORMATION SRAM

K9F2G08U0B

Abstract: K9HCG08U1M-PCB0 K9NCG08U5M-PCB0 K9F1G08U0C K9F4G08U0B-PCB0 K9F2G08U0B-PCB0 K9F4G08U0B K9WBG08U1M K9F1G08U0C-PCB0 K9G4G08U0B
Contextual Info: Samsung Semiconductor, Inc. Product Selection Guide Memory and Storage January 2009 Samsung Semiconductor, Inc. Samsung offers the industry’s broadest memory portfolio and has maintained its leadership in memory technology for 16 straight years. Its DRAM, flash and SRAM

S25FL129

Abstract: S98GL064NB0 S98GL064 s29gl256p90 S70FL256 S98GL064NB s71vs128 S25FL129P WSON 6x8 S25FL032K
Contextual Info: Spansion Product Selector Guide Embedded and Mobile Applications Portfolio March 2011 Spansion ® Products Portfolio . Automotive . Consumer electronics . Gaming . Industrial equipment . Machine-to-Machine Spansion offers a wide range of NOR Flash memory solutions in multiple voltages,

S25FL256

Abstract: S25FL512 S98GL064 S25FL256* spansion S98GL064NB S98GL064NB0 S25FL204 s25fl128s S25FL129 S25FL032K
Contextual Info: Spansion Product Selector Guide April 2012 Spansion ® Products Portfolio Spansion offers a wide range of NOR Flash memory solutions in multiple voltages, densities and packages expressly designed and optimized for embedded and mobile applications, including:

L1-L10

Abstract: MD-12 WS128N dc m7 footprint JESD 95-1, SPP-010 top mark e5 S71WS-N S29WS128N S29WS256N S71WS128NB0
Contextual Info: S71WS-N Stacked Multi-Chip Product MCP 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory with CellularRAM S71WS-N Cover Sheet Data Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion product(s) described herein. Each product described herein may be designated as Advance Information,

ball 128 mcp

Abstract: MCP NAND, DRAM, NOR LJ512 S29NS-P S72NS128PD0 S72NS256PD0 S72NS512PD0 S72NS-P MCP NAND D3-D16
Contextual Info: S72NS-P MCP/PoP Memory System Solutions MirrorBit Flash Memory and DRAM 128/256/512 Mb 8/16/32 M x 16 bit , 1.8 Volt-only, Multiplexed Simultaneous Read/Write, Burst Mode Flash Memory 128/256 Mb (8/16 M x 16 bit) DDR DRAM on Split Bus S72NS-P MCP/PoP Memory System Solutions Cover Sheet

512MB NOR FLASH

Abstract: BTA160 BGA 130 MCP NAND DDR S72WS512NFFKFWZ2 Flash MCp nand DRAM 137-ball ball 128 mcp NAND FLASH BGA S29WS256N S72WS256ND0 S72WS256NDE
Contextual Info: S72WS-N Based MCP/PoP Products 1.8 Volt-only x16 Flash Memory and SDRAM on Split Bus 256/512 Mb Simultaneous Read/Write, Burst Mode Flash Memory 512 Mb NAND Flash 1024 Mb NAND Interface ORNAND Flash Memory on Bus 1 512/256/128 Mb 8M/4M/2M x 16-bit x 4 Banks Mobile SDRAM on Bus 2

74LVT162245

Abstract: 74LVT162245G 74LVT162245MEA 74LVT162245MTD 74LVTH162245 74LVTH162245G 74LVTH162245MEA 74LVTH162245MEX LVT162245 LVTH162245
Contextual Info: Revised June 2005 74LVT162245 • 74LVTH162245 Low Voltage 16-Bit Transceiver with 3-STATE Outputs and 25: Series Resistors in A Port Outputs General Description Features The LVT162245 and LVTH162245 contains sixteen noninverting bidirectional buffers with 3-STATE outputs and is

BGA 130 MCP NAND DDR

Abstract: JEP95 137-Ball DSA00272754 Flash MCp nand DRAM 137-ball S72WS512PEF N-ADQ12 130 MCP NAND DDR NAND FLASH BGA Flash MCp nand DRAM 107-ball
Contextual Info: S72WS-P based MCP/PoP Products 1.8 Volt-only x16 Flash Memory and SDRAM on Split Bus Simultaneous Read/Write, Burst Mode NOR Flash NAND Flash or NAND Interface ORNAND Flash on Bus 1 Mobile SDRAM on Bus 2 S72WS-P based MCP/PoP Products Cover Sheet Data Sheet Advance Information

Contextual Info: S71PL-J Based MCPs Stacked Multi-Chip Product MCP Flash Memory and RAM 256M/128/64/32 Megabit (16/8/4/2M x 16-bit) CMOS 3.0 Volt-only Simultaneous Operation Page Mode Flash Memory and 64/32/16/8/4 Megabit (4M/2M/1M/512K/256K x 16-bit) Static RAM/pSRAM Data Sheet (Advance Information)

Contextual Info: 74VCX16374 Low Voltage 16-Bit D-Type Flip-Flops with 3.6V Tolerant Inputs and Outputs General Description Features The VCX16374 contains sixteen non-inverting D-type flipflops with 3-STATE outputs and is intended for bus oriented applications. The device is byte controlled. A buffered clock

S29WS256P

Abstract: S29WS-P S73WS-P
Contextual Info: S73WS-P based MCP Products 1.8 Volt-only x16 Simultaneous Read/Write, Burst Mode Flash Mobile SDRAM on Shared Bus S73WS-P based MCP Products Cover Sheet Data Sheet Advance Information Notice to Readers: This document states the current technical specifications regarding the Spansion

Contextual Info: Revised August 2002 74VCX16245 Low Voltage 16-Bit Bidirectional Transceiver with 3.6V Tolerant Inputs and Outputs General Description The VCX16245 contains sixteen non-inverting bidirectional buffers with 3-STATE outputs and is intended for bus oriented applications. The device is byte controlled. Each

S71WS512PD0

Abstract: S29WS512P S29WS-P S71WS512PC0 S71WS512PC0HF3 S71WS512PD0HF3 S71WS-P
Contextual Info: S71WS-P based MCP Products 1.8 Volt-only x16 Simultaneous Read/Write, Burst Mode Flash Memory with CellularRAM Data Sheet Advance Information S71WS-P based MCP Products Cover Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion

K4S161622H-UC60

Contextual Info: K4S161622H CMOS SDRAM 16Mb H-die SDRAM Specification 50 TSOP-II with Pb-Free RoHS compliant Revision 1.4 August 2004 Samsung Electronics reserves the right to change products or specification without notice. Rev 1.4 August 2004 K4S161622H CMOS SDRAM Revision History

74LVT16374

Abstract: 74LVT16374MEA 74LVT16374MTD 74LVTH16374 74LVTH16374G 74LVTH16374MEA 74LVTH16374MTD LVT16374 LVTH16374
Contextual Info: Revised June 2005 74LVT16374 • 74LVTH16374 Low Voltage 16-Bit D-Type Flip-Flop with 3-STATE Outputs General Description Features The LVT16374 and LVTH16374 contain sixteen non-inverting D-type flip-flops with 3-STATE outputs and is intended for bus oriented applications. The device is byte controlled.

S71GL-N

Abstract: Flash Memory Product Selector Guide MARKING 9B ME S29PL127J S71PL032J40 S71PL-J S71PL256N PSRAM A20-A18 sram 256mb 64X
Contextual Info: S71PL-J Based MCPs Data Sheet Retired Product S71PL-J Based MCPs Cover Sheet This product has been retired and is not recommended for new designs. For new designs, S71GL-A or S71GL-N supersedes S71PL-J. Please contact your local Spansion sales office to determine the appropriate migration device, specifications, and

sram 256mb 64X

Abstract: S29PL127J S71PL032J40 S71PL032J80 S71PL032JA0 S71PL-J S71PL256N S71PL127J
Contextual Info: S71PL-J Based MCPs Stacked Multi-Chip Product MCP Flash Memory and RAM 256M/128/64/32 Megabit (16/8/4/2M x 16-bit) CMOS 3.0 Volt-only Simultaneous Operation Page Mode Flash Memory and 64/32/16/8/4 Megabit (4M/2M/1M/512K/256K x 16-bit) Static RAM/Pseudo Static RAM

S30ML01GP

Abstract: S30ML512P S29PL127N S29PL-N S30ML-P S75PL127NBF S75PL-N S30ML01 tray matrix bga
Contextual Info: S75PL-N MirrorBit ORNAND™ MCPs Stacked Multi-Chip Product MCP S29PL-N: CMOS 3.0 Volt-only Simultaneous Read/Write, Page-mode Flash Memory (NOR Interface) S30ML-P: ORNAND Flash (NAND Interface) 3V pSRAM S75PL-N MirrorBit™ ORNAND™ MCPs Cover Sheet

74LCXH16244

Abstract: 74LCXH16244G 74LCXH16244MEA 74LCXH16244MTD MO-205 MS48A MTD48
Contextual Info: Revised June 2005 74LCXH16244 Low Voltage 16-Bit Buffer/Line Driver with Bushold General Description Features The LCXH16244 contains sixteen non-inverting buffers with 3-STATE outputs designed to be employed as a memory and address driver, clock driver, or bus oriented transmitter/receiver. The device is nibble controlled. Each nibble

samsung K9 flash

Abstract: Samsung EOL 168FBGA samsung nor flash samsung s6 K4X1G163PC-FGC3 k4 MARKING CODE samsung K4 samsung cdram
Contextual Info: SAMSUNG's Digital World go contents DRAM ● ● ● ● Computing ❍ DDR3 Products ❍ DDR2 Products ❍ DDR Products ❍ SDRAM Products ❍ System Compatibility ❍ EOL Products Consumer ❍ Products Mobile ❍ Products ❍ EOL Products Graphic & Gaming

74LCX16374

Abstract: 74LCX16374G 74LCX16374MEA 74LCX16374MTD LCX16374 MO-205 MS48A MTD48
Contextual Info: Revised May 2005 74LCX16374 Low Voltage 16-Bit D-Type Flip-Flop with 5V Tolerant Inputs and Outputs General Description Features The LCX16374 contains sixteen non-inverting D-type flip-flops with 3-STATE outputs and is intended for bus oriented applications. The device is byte controlled. A buffered clock CP and Output Enable (OE) are common to

TRAY FBGA 11X13

Abstract: S72MS512PE0HF94V MCP NAND sDR S72MS-P BGA 15X15 137-Ball MCP NAND DDR S30MS-P Spansion NAND Flash Spansion NAND Flash DIE
Contextual Info: S72MS-P based MCP/PoP Products 1.8 Volt-only x16 Flash Memory and SDRAM on Split Bus NAND Interface ORNAND Flash on Bus 1 Mobile SDRAM on Bus 2 Data Sheet Advance Information S72MS-P based MCP/PoP Products Cover Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion

S71WS256PC0HH3YR

Abstract: SWM064D133S1R S71WS256Pc0 S71WS256PC0HH S71WS256PC0HH3 SWM032D S71WS256PC S71WS512PD0HH3Y S71WS256PD
Contextual Info: S71WS-P based MCP Products 1.8 Volt-only x16 Simultaneous Read/Write, Burst Mode Flash Memory with CellularRAM Data Sheet S71WS-P based MCP Products Cover Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion