48TBGA Search Results

Contextual Info: Preliminary CMOS SRAM K6F4016S6G Family Document Title 256Kx16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History 0.0 Initial Draft Draft Date Remark October 21, 2003 Preliminary The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and

K6R1016C1D

Contextual Info: PRELIMINARY CMOS SRAM K6R1016C1D Document Title 64Kx16 Bit High-Speed CMOS Static RAM 5.0V Operating . Operated at Commercial and Industrial Temperature Ranges. Revision History Rev. No. History Rev. Rev. Rev. Rev. Initial release with Preliminary. Page 4, DC operation condition modify

K1S321611C

Abstract: K1S321611C-I
Contextual Info: Preliminary K1S321611C UtRAM Document Title 2Mx16 bit Uni-Transistor Random Access Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft January 16, 2003 Advanced 0.1 Revised - Deleted 60ns Speed Bin June 13, 2003 Preliminary 0.2

K6F4016R6G

Contextual Info: Preliminary CMOS SRAM K6F4016R6G Family Document Title 256Kx16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History 0.0 Initial Draft Draft Date Remark February 6, 2003 Preliminary The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and

K6R4008C1D

Abstract: K6R4004C1D-JC K6R4016V1D-J Samsung K6R4008C1D 32SOJ
Contextual Info: PRELIMINARY CMOS SRAM K6R4008C1D Document Title 512Kx8 Bit High Speed Static RAM 5.0V Operating . Operated at Commercial and Industrial Temperature Ranges. Revision History Rev No. History Rev. 0.0 Initial release with Preliminary. September. 7. 2001 Preliminary

K6F2016S4E

Contextual Info: K6F2016S4E Family CMOS SRAM Document Title 128K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History Draft Date Remark Preliminary 0.0 Initial Draft April 17, 2001 1.0 Finalize - Changed 48-TBGA vertical dimension

K6F4016U4G

Contextual Info: Preliminary CMOS SRAM K6F4016U4G Family Document Title 256Kx16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History 0.0 Initial Draft Draft Date Remark October 15, 2003 Preliminary The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and

Contextual Info: Preliminary CMOS SRAM K6F4016S6F Family Document Title 256Kx16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History 0.0 Initial Draft Draft Date Remark February 1, 2002 Preliminary The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and

K6F8016R6B-EF70

Abstract: EF85 K6F8016R6B K6F8016R6B-F
Contextual Info: K6F8016R6B Family CMOS SRAM Document Title 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial draft July 25, 2001 Preliminary 1.0 Finalize October 24, 2001 Final The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and

K1S321615M

Abstract: K1S321615M-E
Contextual Info: K1S321615M UtRAM Document Title 2Mx16 bit Uni-Transistor Random Access Memory Revision History Revision No. History Draft Date 0.0 Initial Draft - Design target 0.1 Revised - Change package type from FBGA to TBGA. - Improve operating current from 30mA to 25mA.

Contextual Info: K6F1616R6M Family CMOS SRAM Document Title 1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial draft August 22, 2000 Preliminary 0.1 Revise - Change the package type from FBGA to TBGA

k6f8016u6aef70

Contextual Info: K6F8016U6A Family CMOS SRAM Document Title 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial draft August 14, 2000 Preliminary 0.1 Revise - Change Package type from FBGA to TBGA

K6R1016V1D

Contextual Info: for AT&T CMOS SRAM K6R1016V1D Document Title 64Kx16 Bit High-Speed CMOS Static RAM 3.3V Operating Operated at Commercial and Industrial Temperature Ranges. Revision History Rev. No. History Rev. 0.0 Rev. 0.1 Rev. 0.2 Initial document. Speed bin modify Current modify

K6R1004V1D

Abstract: K6R1016
Contextual Info: PRELIMINARY PRELIMINARY for AT&T K6R1004V1D CMOS SRAM Document Title 64Kx16 Bit High-Speed CMOS Static RAM 3.3V Operating Operated at Commercial and Industrial Temperature Ranges. Revision History Rev. No. History Rev. 0.0 Rev. 0.1 Rev. 0.2 Initial document.

Contextual Info: Preliminary CMOS SRAM K6F8016U6A Family Document Title 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial draft August 14, 2000 Preliminary 0.1 Revise - Change Package type from FBGA to TBGA

Contextual Info: Preliminary K6F8016R6A Family CMOS SRAM Document Title 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial draft August 21, 2000 Preliminary 0.1 Revise - Change package type from FBGA to TBGA

Contextual Info: PRELIMPreliminaryPPPPPPPPPINARY K6R4016V1D CMOS SRAM Document Title 256Kx16 Bit High Speed Static RAM 3.3V Operating . Operated at Commercial and Industrial Temperature Ranges. Revision History Rev No. History Draft Data Rev. 0.0 Initial release with Preliminary.

Contextual Info: PRELIMINARY CMOS SRAM K6R4004V1D Document Title 1Mx4 Bit High Speed Static RAM 3.3V Operating . Operated at Commercial and Industrial Temperature Ranges. Revision History Rev No. History Draft Data Rev. 0.0 Initial release with Preliminary. Aug. 20. 2001 Preliminary

Contextual Info: K6F1616V6B Family CMOS SRAM Document Title 1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial draft July 11, 2003 Preliminary 1.0 Finalized - Changed ISB1 from 25uA to 20uA - Changed IDR from 15uA to 10uA

Contextual Info: for AT&T CMOS SRAM K6R1016V1D Document Title 64Kx16 Bit High-Speed CMOS Static RAM 3.3V Operating Operated at Commercial and Industrial Temperature Ranges. Revision History Rev. No. History Rev. 0.0 Rev. 0.1 Rev. 0.2 Initial document. Speed bin modify Current modify

Contextual Info: PRELIMINARY CMOS SRAM K6R1016C1D Document Title 64Kx16 Bit High-Speed CMOS Static RAM 5.0V Operating . Operated at Commercial and Industrial Temperature Ranges. Revision History Rev. No. History Rev. 0.0 Rev. 0.1 Rev. 0.2 Rev. 0.3 Initial release with Preliminary.

K6R1008V1D

Abstract: 32-SOJ 44TSOP
Contextual Info: PRELIMINARY for AT&T CMOS SRAM K6R1008V1D Document Title 64Kx16 Bit High-Speed CMOS Static RAM 3.3V Operating Operated at Commercial and Industrial Temperature Ranges. Revision History Rev. No. History Draft Data Remark Rev. 0.0 Rev. 0.1 Rev. 0.2 Initial document.

SST32HF202

Abstract: SST32HF402 SST32HF802
Contextual Info: Multi-Purpose Flash MPF + SRAM ComboMemory SST32HF202 / SST32HF402 / SST32HF802 SST32HF202 / 402 / 8022Mb Flash + 2Mb SRAM, 4Mb Flash + 2Mb SRAM, 8Mb Flash + 2Mb SRAM (x16) MCP ComboMemory EOL Data Sheet FEATURES: • MPF + SRAM ComboMemory – SST32HF202: 128K x16 Flash + 128K x16 SRAM

K6R4008V1D

Abstract: 36-SOJ 44TSOP 36-SOJ-400 44-TSOP2
Contextual Info: PRELIMINARY CMOS SRAM K6R4008V1D Document Title 512Kx8 Bit High Speed Static RAM 3.3V Operating . Operated at Commercial and Industrial Temperature Ranges. Revision History Rev No. History Draft Data Rev. 0.0 Initial release with Preliminary. Aug. 20. 2001