FBGA 320 Search Results

Contextual Info: DDR400 SDRAM 512Mb B-die FBGA x4, x8, x16 DDR SDRAM 512Mb B-die DDR400 SDRAM Specification 60Ball FBGA Revision 1.2 November, 2004 Revision 1.2 November, 2004 DDR400 SDRAM 512Mb B-die FBGA (x4, x8, x16) DDR SDRAM 512Mb B-die Revision History Revision 0.0 (September, 2003)

K4H510438B-ZC

Contextual Info: DDR400 SDRAM 512Mb B-die FBGA x4, x8, x16 DDR SDRAM 512Mb B-die DDR400 SDRAM Specification 60 FBGA with Pb-Free (RoHS compliant) Revision 1.1 March, 2004 Revision 1.1 March, 2004 DDR400 SDRAM 512Mb B-die FBGA (x4, x8, x16) DDR SDRAM 512Mb B-die Revision History

IEC60730

Abstract: CMOS Sensor to H.264 STK 361 ARM926EJ-S lcd cross reference VIA ARM926EJ-S SD-Card layout TMPA900CMXBG toshiba lcd controller board TMPA912CM
Contextual Info: ARM9 Microcontroller TMPA900CMXBG Memory Features ADC 10-bit Ch. 16-bit Timer RTC / WDT 32 FBGA 289 √ √ H/D 2 3 2 1 8 6 √ 91 1.7~3.6 TMPA901CMXBG 2 ARM926EJ-S 200* - 32 FBGA 177 √ √ H/D 1 2 1 1 4 6 √ 43 1.7~3.6 ARM926EJ-S 200* - 56 FBGA 361 √

Signetics

Abstract: 19X19 19X19MM
Contextual Info: Data Sheet Signetics Data Sheet Signetics Flip Chip Package Signetics FBGA Signetics Fine Pitch Ball Grid Array Package FBGA is a laminate-based, nearly chip-scale package. They provide excellent electrical performance and can be customized for use in an infinite number of applications. This

MTFC4G

Abstract: MTFC16G micron emmc MTFC32G micron eMMC 100 ball BGA MTfc8g emmc csd MTFC4 micron emmc 4.4 MTFC16GKQDI
Contextual Info: 4GB, 8GB, 16GB, 32GB: e•MMC Features e·MMC Memory MTFC4GGQDM, MTFC4GGQDI, MTFC8GKQDI, MTFC16GKQDI, MTFC32GKQDH Features Figure 1: Micron e·MMC Device • MultiMediaCard MMC controller and NAND Flash • 153-ball FBGA or 169-ball FBGA (6/6 RoHS-compliant)

m312l

Contextual Info: 512MB, 1GB, 2GB FBGA DDR400 Registered DIMM DDR SDRAM DDR SDRAM Registered Module DDR400 Module 60FBGA 184pin Registered Module based on 512Mb B-die (x4, x8) with 1,125mil/1,200mil Height Revision 1.1 November. 2004 Revision 1.1 November 2004 512MB, 1GB, 2GB FBGA DDR400 Registered DIMM

Contextual Info: 512MB, 1GB, 2GB FBGA DDR400 Registered DIMM DDR SDRAM DDR SDRAM Registered Module DDR400 Module 184pin Registered Module based on 512Mb B-die x4, x8 with 1,125mil/1,200mil Height 60 FBGA with Pb-Free (RoHS compliant) Revision 1.2 Nov. 2004 Revision 1.2 November. 2004

M312L2920BG0-CCC

Abstract: M312L5720BG0-CCC M312L6523BG0-CCC M312L2920BG0 DDR400 M312L2923BG0-CCC
Contextual Info: 512MB, 1GB, 2GB FBGA DDR400 Registered DIMM DDR SDRAM DDR SDRAM Registered Module DDR400 Module 60FBGA 184pin Registered Module based on 512Mb B-die (x4, x8) with 1,125mil/1,200mil Height Revision 1.0 November. 2003 Revision 1.0 November 2003 512MB, 1GB, 2GB FBGA DDR400 Registered DIMM

Contextual Info: 184pin Registered DDR SDRAM DIMMs based on 512Mb B ver. FBGA This Hynix Registered Dual In-Line Memory Module (DIMM) series consists of 512Mb B ver. DDR SDRAMs in 60 ball FBGA package on a 184pin glass-epoxy substrate. This Hynix 512Mb B ver. based Registered DIMM series provide a

Contextual Info: 512Mb: x16 Mobile LPDDR2 SDRAM S4 Features Mobile LPDDR2 SDRAM MT42L32M16D1 Features Options Marking • VDD2: 1.2V • Configuration – 8 Meg x 16 x 4 banks • Device type – LPDDR2-S4, 1 die in package • FBGA “green” package – 121-ball FBGA 6.5mm x 8mm

Contextual Info: STM32F205xx STM32F207xx ARM-based 32-bit MCU, 150DMIPs, up to 1 MB Flash/128+4KB RAM, USB OTG HS/FS, Ethernet, 17 TIMs, 3 ADCs, 15 comm. interfaces & camera Datasheet − production data Features FBGA FBGA • ■ Core: ARM 32-bit Cortex -M3 CPU 120 MHz

NAND sample code for stm32f2xx

Abstract: DCMI timing specification STM32F20xxx programming manual stm32f205rx STM32F20xxx reference manual STM32F207ZE programming manual stm32f205 STM32F20x STM32F20xxx STM32F207ZG
Contextual Info: STM32F205xx STM32F207xx ARM-based 32-bit MCU, 150DMIPs, up to 1 MB Flash/128+4KB RAM, USB OTG HS/FS, Ethernet, 17 TIMs, 3 ADCs, 15 comm. interfaces & camera Datasheet − production data Features • ■ FBGA FBGA Core: ARM 32-bit Cortex -M3 CPU 120 MHz

Contextual Info: W3H32M64E-XSBX 256MB – 32M x 64 DDR2 SDRAM 208 PBGA Multi-Chip Package FEATURES BENEFITS  Data rate = 667, 533, 400 Mb/s  62% Space savings vs. FBGA  Package:  Reduced part count • 208 Plastic Ball Grid Array PBGA , 16 x 20mm  42% I/O reduction vs FBGA

Contextual Info: 200pin Unbuffered DDR SDRAM SO-DIMMs based on 512Mb B ver. FBGA This Hynix unbuffered Small Outline, Dual In-Line Memory Module (DIMM) series consists of 512Mb B ver. DDR SDRAMs in 60 ball FBGA packages on a 200pin glass-epoxy substrate. This Hynix 512Mb B ver. based unbuffered SODIMM series provide a high performance 8 byte interface in 67.60mm width form factor of industry standard. It is suitable for easy interchange and addition.

H5DU5162

Contextual Info: Data Sheet Rev.1.1 09.06.2010 256MB DDR – SDRAM SoDIMM 200PIN SoDIMM Features: SDN03264C1CE1HY-50R 256MB PC-3200 in FBGA Technique RoHS compliant Options: • Frequency / Latency DDR 400 MHz CL3 DDR 333 MHz CL2.5 • Module densities 256MB with 4 dies and 1 rank

M378T5663FB3

Contextual Info: Rev. 1.0, Jul. 2010 M378T2863FBS M378T5663FB3 M391T2863FB3 M391T5663FB3 240pin Unbuffered DIMM based on 1Gb F-die 60 & 84 FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND

K4W1G1646D-EC15

Abstract: K4W1G1646D-EJ11 K4W1G1646D-EC gDDR3-1800 DDR3 DIMM 240 pinout GDDR3 SDRAM 256Mb JESD51-2 VIH150 SAMSUNG GDDR3 K4W1G1646D
Contextual Info: 1Gb gDDR3 SDRAM K4W1G1646D 1Gb gDDR3 SGRAM D-die 100 FBGA with Lead-Free & Halogen-Free RoHS Compliant CAUTION : * This document includes some items still under discussion in JEDEC. * Therefore, those may be changed without pre-notice based on JEDEC progress.

FX811

Abstract: FY818 MT28F321P18 MT28F321P20 P20FG-70 FY821
Contextual Info: PRELIMINARY‡ 2 MEG x 16 PAGE FLASH MEMORY FLASH MEMORY MT28F321P20 MT28F321P18 Low Voltage, Extended Temperature 0.18µm Process Technology FEATURES BALL ASSIGNMENT 48-Ball FBGA • Flexible dual-bank architecture Support for true concurrent operation with zero

Contextual Info: N04C1630E3AM NanoAmp Solutions, Inc. 1982 Zanker Road, San Jose, CA 95112 ph: 408-573-8878, FAX: 408-573-8877 www.nanoamp.com Advance Information N04C1630E3AM Low Voltage, Extended Temperature FLASH AND SRAM COMBO MEMORY FEATURES BALL ASSIGNMENT 66-Ball FBGA Top View

K4W1G1646E

Abstract: samsung K4W1G1646E-HC11
Contextual Info: 1Gb gDDR3 SDRAM K4W1G1646E 1Gb gDDR3 SDRAM E-die 96 FBGA with Lead-Free & Halogen-Free RoHS Compliant CAUTION : * This document includes some items still under discussion in JEDEC. * Therefore, those may be changed without pre-notice based on JEDEC progress.

FBGA 11x13

Abstract: k8p2716 K8P2716UZC
Contextual Info: Rev. 1.0, Jan. 2010 K8P2716UZC 128Mb C-die Page NOR Flash 56Pin TSOP 20x14mm , 64ball FBGA (11x13, 1.0mm ball pitch) Page Mode, (8M x16, 16Mb x8) datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE.

K4W1G1646D-EC15

Abstract: K4W1G1646D
Contextual Info: 1Gb gDDR3 SDRAM K4W1G1646D 1Gb gDDR3 SGRAM D-die 100 FBGA with Lead-Free & Halogen-Free RoHS Compliant CAUTION : * This document includes some items still under discussion in JEDEC. * Therefore, those may be changed without pre-notice based on JEDEC progress.

MT28F322D18

Abstract: MT28F322D20 FX546
Contextual Info: 2 MEG x 16 ASYNC/PAGE/BURST FLASH MEMORY FLASH MEMORY MT28F322D20 MT28F322D18 Low Voltage, Extended Temperature 0.18µm Process Technology FEATURES BALL ASSIGNMENT 58-Ball FBGA • Flexible dual-bank architecture – Support for true concurrent operation with zero

DDR266

Abstract: DDR333 WV3EG232M64EFSU-D4
Contextual Info: White Electronic Designs WV3EG232M64EFSU-D4 ADVANCED* 512MB – 2x32Mx64 DDR SDRAM, UNBUFFERED, w/PLL, FBGA FEATURES DESCRIPTION Fast data transfer rate: PC-2100 and PC-2700 The WV3EG232M64EFSU is a 2x32Mx64 Double Data Rate SDRAM memory module based on 256Mb DDR