F78 PACKAGE Search Results

transistor marking code 7C

Contextual Info: BF 517 NPN Silicon RF Transistor • B ro ad b a n d am plifier and o sc illa to r ap p licatio n s up to 1 G H z Typ« Marking Ordering code for versions In bulk Ordering code for versions on 8 mm-tape Package B F 517 LR Q 62702-F988 Q 62702-F78 S O T 23

Contextual Info: ^ S' CY7C130/CY7C131 CY7C140/CY7C141 mm CYPRESS SEMICONDUCTOR • 1024 x 8 Dual-Port Static RAM Features Functional Description • 0.8-micron CMOS for optimum speed/power • Automatic power-down • TTL compatible • Capable of withstanding greater than

B057r

Abstract: cv7c130 CY7C130 CY7C131 CY7C140 CY7C141 Zl13
Contextual Info: CYPRESS SEMI CONDUCTOR 4bE D • 2 5 0 ^ 2 ''-T ^ C r L V O * ODDbBMO 1 E S C Y P C Y 7 C 1 3 0 /C Y 7 C 1 3 1 C Y 7 C 1 4 0 /C Y 7 C 1 4 1 CYPRESS SEMICONDUCTOR 1024 x 8 Dual-Port Static RAM Features Functional Description • 0,8-micron CMOS for optimum

z131

Abstract: Z1314 893Q C140 CY7C130 CY7C131 CY7C140 CY7C141 TSGB
Contextual Info: CYPRESS SEMI CONDUCTOR bSE D • 258ThbE DDGT73M 5TB, «CYP CY7C130/CY7C131 CY7C140/CY7C141 PY ppT ?cq SEMICONDUCTOR Features Functional Description • 0.8-micron CMOS for optimum speed/power • Automatic power-down • 1TL compatible • Capable of withstanding greater than

7C1312

Abstract: Cypress 7C130
Contextual Info: CY7C130/CY7C131 CY7C140/CY7C141 CYPRESS SEMICONDUCTOR Features Functional Description • 0.8-micron CMOS for optimum speed/power • Automatic power-down • TTL compatible • Capable of withstanding greater than 2001V electrostatic discharge • Fully asynchronous operation

Contextual Info: CY7C130/CY7C131 CY7C140/CY7C141 CYPRESS SEMICONDUCTOR Features Functional Description • 0.8-micron CMOS for optimum speed/power • Automatic power-down • TTL compatible • Capable of withstanding greater than 2001V electrostatic discharge • Fully asynchronous operation

7C130

Abstract: L1314
Contextual Info: CY7C130/CY7C131 CY7C140/CY7C141 _ 1024 x 8 Dual-Port Static RAM aT ^ p -¿r CYPRESS ^ SEMICONDUCTOR E ach p o rt has independent control pins; chip enable C E , w rite enable (RyW), and output The CY 7C130/CY7C131/CY7C140/ enable (O E ). TVvo flags are p rovided on each

48 Lead Ceramic Quad Flatpack

Abstract: CERAMIC FLATPACK MIL-STD-1835 F70 Package
Contextual Info: Package Diagram Ceramic Flatpacks 16-Lead Rectangular Flatpack F69 MIL-STD-1835 F-5 Config. B 18–Lead Rectangular Flatpack F70 1 Package Diagram 24-Lead Rectangular Flatpack F73 MIL-STD-1835 F- 6 Config. B 32-Lead Rectangular Flatpack F75 2 Package Diagram

ys 2103

Abstract: hex to 7 segment decoder CY7C132 CY7C146 CY7C136
Contextual Info: CYPRESS S EMI COND UCTOR MbE D □ 5S0^bb2 GDDb 3S 3 7 C CYP CY7C132/CY7C136 CY7C142/CY7C146 2048 x 8 Dual-Port Static RAM output enable OE . BUSY flags are pro­ vided on each port. In addition, an interrupt flag (INT) is provided on each port of the 52-pin LCC and PLCC versions. BUSY sig­

Contextual Info: CY7C132/CY7C136 CY7C142/CY7C146 CYPRESS SEMICONDUCTOR Features Functional Description • 0.8-micron CMOS for optimum speed/power • Automatic power-down • TTL compatible • Capable of withstanding greater than 2001V electrostatic discharge • Fully asynchronous operation

TDB6HK240N16P

Contextual Info: Technische Information / technical information TDB6HK240N16P IGBT-Module IGBT-modules EconoPACK 4 Modul und PressFIT EconoPACK™4 module and PressFIT * + , (-./ 0 1 ( 2- 345 0 6 , 2-78 0 ! 6 9 : 6 ; * •< • • "A( A • • • • * =1 = > ? :

62ajk

Abstract: 2A99 TDB6HK360N16P
Contextual Info: Technische Information / technical information TDB6HK360N16P IGBT-Module IGBT-modules EconoPACK 4 Modul und PressFIT / NTC EconoPACK™4 module and PressFIT / NTC * + , (-./ 0 1 ( 2- 345 0 1 6 , 2-78 0 9 : ; 6 < * •= • • !B( B • • • • *

Z1213

Abstract: CY7C132 CY7C136 CY7C146 zl12
Contextual Info: bSE » CYPRESS SEMICONDUCTOR SSÖ'lbbE 0 0 0 ^ 7 4 7 ISb I CYP CY7C132/CY7C136 CY7C142/CY7C146 CYPRESS SEMICONDUCTOR 2K x 8 Dual-Port Static RAM output enable OE . BUSY flags are pro­ vided on each port. In addition, an interrupt Functional Description Features

HA 13645

Abstract: acr38
Contextual Info: CY7C132/CY7C136 CY7C142/CY7C146 CYPRESS SEMICONDUCTOR 2K x 8 Dual-Port Static RAM Features Functional Description • 0.8-micron CM OS for optimum speed/power • BUSY output flag on CY7C132/ CY7C136; BUSY input on CY7C142/CY7C146 The CY7C132/CY 7C136/CY7C142/

Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules TDB6HK360N16P EconoPACK 4 Modul und PressFIT / NTC EconoPACK™4 module and PressFIT / NTC C2 *36+436,61234286544 (-./6061( 2-6345606166,62-7860696 :81;366<35*3

30l3l

Contextual Info: CY7C132/CY7C136 CY7C142/CY7C146 CYPRESS SEMICONDUCTOR F eatures F unctional D escription • 0.8-micron CMOS for optimum speed/power • Automatic power-down • TTL compatible • Capable of withstanding greater than 2001V electrostatic discharge • Fully asynchronous operation

Contextual Info: CY7C132/CY7C136 CY7C142/CY7C146 CYPRESS SEMICONDUCTOR 2K x 8 Dual-Port Static RAM Features Functional Description • 0.8-raicron CMOS for optimum speed/power • BÜSŸ output flag on CY7C132/ CY7C136; BUSY input on CY7C142/CY7C146 The CY7C132/CY 7C136/CY7C142/

1C13AD

Abstract: 778C1
Contextual Info: ML6101 ML6101 Series Voltage Monitor1 1 122345674891 1 BC67DECF1 2 Battery Charger Voltage Monitor 1 3 A 3 3 3 3 CMOS Low Power Consumption : Typical 1.0uAat Vin=2.0V Selectable Monitor Voltage : 1.1V to 6.0V in 0.1V increments HighlyAccurate : Detect Voltage 1.1V to 1.9V + 3%

Contextual Info: Mini-Circuits System In Package Ultra High IP3 Amplifier Module 50Ω HXG-122+ 0.5 to 1.2 GHz The Big Deal Ceramic Package • Industry leading High IP3, 47 dBm typ. • Integrated optimization circuits • Linearity with low current consumption ☛ LTE Performance

TB-641-242

Contextual Info: Mini-Circuits System In Package Ultra High IP3 Amplifier Module 50Ω HXG-242+ 0.7 to 2.4 GHz The Big Deal Ceramic Package • Industry leading High IP3, 46 dBm typ. • Integrated optimization circuits • Linearity with low current consumption ☛ LTE Performance

Contextual Info: Mini-Circuits System In Package Ultra High IP3 Amplifier Module 50Ω HXG-122+ 0.5 to 1.2 GHz The Big Deal Ceramic Package • Industry leading High IP3, 47 dBm typ. • Integrated optimization circuits • Linearity with low current consumption ☛ LTE Performance

Contextual Info: Mini-Circuits System In Package Ultra High IP3 Ampli er Module 50 HXG-122+ 0.5 to 1.2 GHz The Big Deal Ceramic฀Package •฀ Industry฀leading฀High฀IP3,฀47฀dBm฀typ. •฀ Integrated฀optimization฀circuits •฀ Linearity฀with฀low฀current฀consumption

HXG-122

Contextual Info: Mini-Circuits System In Package Ultra High IP3 Amplifier Module 50Ω HXG-122+ 0.5 to 1.2 GHz The Big Deal Ceramic Package • Industry leading High IP3, 47 dBm typ. • Integrated optimization circuits • Linearity with low current consumption ☛ LTE Performance

TB-641-242

Contextual Info: Mini-Circuits System In Package Ultra High IP3 Amplifier Module 50Ω HXG-242+ 0.7 to 2.4 GHz The Big Deal Ceramic Package • Industry leading High IP3, 46 dBm typ. • Integrated optimization circuits • Linearity with low current consumption ☛ LTE Performance