F6 DIODE Search Results

Contextual Info: SANKEN ELECTRIC CO., LTD. SJW-F6 1. Scope The present specifications shall apply to an SJPW-F6. 2. Outline Type Silicon Schottky Barrier Diode Structure Resin Molded Applications High Frequency Rectification 3. Flammability UL94V-0 Equivalent 070903 1／5

SMA 905 fiber dimensions

Abstract: SMA 905 Connector
Contextual Info: TH-C1830-F6 30W CW FIBER COUPLED LASER DIODES DESCRIPTION The TH-C1830-F6 product is a high optical power fiber coupled laser diode source. The CW power delivered is 30W. Such power output is very suitable for applications which request high brightness sources: efficient pumping

Contextual Info: 2,5 SMCJ 160 . 2,5 SMCJ 180CA ,* @ 5 ;   .   Absolute Maximum Ratings Symbol Conditions Surface mount diode Unidirectional and bidirectional Transient Voltage Suppressor diodes Values Units 5 :  :  * "5 F6: 2 F6:   -   .   

4K diode

Contextual Info: 2,5 SMCJ 160 . 2,5 SMCJ 180CA ,* @ 5 ;   .   Absolute Maximum Ratings Symbol Conditions Surface mount diode Unidirectional and bidirectional Transient Voltage Suppressor diodes Values Units 5 :  :  * "5 F6: 2 F6:   -   .   

uge 1112 AY4

Abstract: din 74 f6 Diode f6 3132 ad general electric rectifier cooling 150C60B f6 rectifiers
Contextual Info: 1~ / 3~High Voltage Rectifiers Contents VRRM Circuit configuration VV RMS IF(AV)M 45°C 10 ms Type UGB UGD IFSM Page V V A A UGB 3132 AD UGB 6124 AG 4800 10500 2250 5000 1.3 1.0 60 50 F6 - 1 F6 - 1 UGD 6123 AG UGD 8124 AG 7200 10500 3300 5000 1.8 1.2 50

1S1585

Abstract: 1SS239 1S1585 equivalent 1SV147 1ss193 equivalent 1SS SOT mark 1SS337 J9 1SV99 1SV103 1SS241
Contextual Info: Super-Mini Diodes SOT-23MOD, SOT-143MOD. F6 Mark Equivalent other package Type No. A3 1S1585 Anode common Cathode comon Electrical Characteristics (Ta=25°C) Type No. Application V r(V) IO(mA) trr (ns) Connection JX. Remarks 1SS181 High-speed switching 80

S3 DIODE schottky

Abstract: S4 DIODE schottky 2SA1015 MARK MQ 1S1585 common anode schottky diode DIODE MARK B
Contextual Info: Ultra S u per Mini Diodes Type No. F6 Electrical Characteristics {Ta=25°C Application Va V) lo(mA) trr(ns) 1SS300 High-speed switching 80 100 1.6TYP 1SS301 High-speed switching 60 100 1.6TYP 1SS302 High-speed switching 60 100 1.6TYP 1SS322 High-speed switching

8 A 123

Abstract: DIODE BZ F6-8R10K
Contextual Info: 7 = 3 9 -3 / F6-8R10K EUPEC SEE Transistor Transistor Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Maximum rated values V ces •c D • 3M032T7 GDDDEb? 110 H U P E C Thermische Eigenschaften Thermal properties Rthjc DC, pro Baustein/p er module

Contextual Info: 1 F6-8R12KF EUPEC SEE D Transistor Transistor Elektrische Eigenschaften Electrical properties Höchstzulässiae Werte Vces Maximum permissible values V 1200 •c ^ • 34032^7 0QDD2t.fi DS7 « U P E C m Thermische Eigenschaften Thermal properties DC, pro Baustein / per module

Contextual Info: 7= 39- 3 / F6-8R10K EUPEC SEE Transistor Transistor Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Maximum rated values V ces •c D • 3M032T7 GDDDEb? 110 H U P E C Thermische Eigenschaften Thermal properties Rthjc DC, pro Baustein/p er module

Lampe diode philips

Abstract: sera HF amplifir Philips schema 158X tube cathodique philips tube cathodique culot
Contextual Info: PH ILIPS RADIO La p enth od e E F6 La lampe EF 6 convient particulièrement pour Tamplification basse fréquence ou comme détectrice par caractéristique de plaque ou de grille, dans les récepteurs pour secteur alterna­ tif, pour secteurs tous courants et aussi pour les

mm glass lens phototransistor

Abstract: wo f6 DIODE
Contextual Info: SIEMENS BPX43 SILICON NPN PHOTOTRANSISTOR Package Dimensions in Inches mm .244 (6.2) .212 (5.4) .570(1451 .492 (12.5) -U ¿0 0 (5 .1 ) 9 (4.8) V 0.100,-(2.54)'- T 0.01 * f6 (0.45) Base '‘Collector 0 .18 9(4.6) 0.181 (4.6) I-106, w .220 (5.6) .206 (5.3)

ST-12

Abstract: Scans-0017340
Contextual Info: I MAX.* R C A - I F6 DUPLEX-DIODE PENTODE T ie 1F6 is a duplex-diode pentode consisting of two diodes and a pen­ tode in a single bulb. It is recom­ mended for service as a combined detector, amplifier radio-frequency, intermediate-frequency or audio-frequency , and automatic-volume-control tube in

Contextual Info: PRELIMINARY DATA SHEET NEC LASER DIODE MODULE NDL5653P RECTRON DEVICE 1 550 nm OPTICAL FIBER CO M M U NICATIO NS InGaAsP PHASE-SHIFTED DFB-DC-PBH LASER DIODE MODULE DESCRIPTION NDL5653P is a 1 550 nm phase-shifted D F6 Distributed Feed-Back laser diode B u tte rfly package module w ith optical isola­

LT1172 boost converter 60v

Abstract: LT1170 boost converter 12v dc LT1170CT AN19 snubber capacitor applications 110092 LT1170 COILTRONICS 50-2-52 LT1171 buck S8 Package LT1170
Contextual Info: Linç/\B LT1170/LTÏI71 /LT1172 TECHNOLOGY ] 00kHz, 5A, 2.5A a n d 1.25A High Efficiency S w itch ing R egulators F6 ÌTUft€S DCSCMPTIOn • Wide Input Voltage Range: 3V to 60V ■ Low Quiescent Current: 6mA ■ Internal 5A Switch (2.5A fo r LT11 7 1 ,1.25A forLT1172

MOSFET irf 939

Abstract: irf610
Contextual Info: HE D I 4ÔS54S2 GaGfl4bb Data Sheet No. PD-9.326H 5 | INTERNATIONAL R E C T I F I E R INTERNATIONAL RECTIFIER l l O R l REPETITIVE AVALANCHE AND dv/dt RATED* HEXFET TRANSISTORS IR F6 1 Q IRFS1 1 IRF6 1 2 N-CHANNEL IRFG1 3 200 Volt, 1.5 Ohm HEXFET T0-220AB Plastic Package

Contextual Info: S G S-THOilSON Æfî 42E P 7^2^37 QG3- 3SÛS □.• S6TH T -*f6 -Û ? -0 5 S G S -TH O ^S O ^ T74LS295A iû 4-BIT SHIFT REGISTER WITH 3-STATE OUTPUTS ■ FULLY SYNCHRONOUS SERIAL OR PARAL­ LEL DATA TRANSFERS ■ NEGATIVE EDGE-TRIGGERED CLOCK INPUT ■ PARALLEL ENABLE MODE CONTROL INPUT

edal series f6

Abstract: dk d05 F5B3 F3F3 f5g3 F7G3 F7K3
Contextual Info: 1 309571 6 EDAL _TS INDUSTRIES INC 95D 00223 D » e | 30TS71h 0000223 3 | ~ EDAL Series F3, F4, F5, F6, F7 ^ n ^ ^ ^ ^ R ífíe rs Edal Series F power rectifiers are stud mounted D O -5 packages, Because the sili­ con junction is carefully fitted within a glassto-m etal herm etically sealed case, reliable

3RF21

Contextual Info: FEATURES • 2 0 - 4 0 0 MHz ■T j F J ■ Small 16 Pin DIP ■ Low Cost PIN Diode ■ Low Current Consumption RF1 3 RF2 Ò Ô 4 CONTI 2 CONT2 RF3 16 1 RF4 14 R F6 RF5 Ò ÓÒÒ 15 CONT3 13 CONT4 5 j RF7 10 12 11 CONT5 8 Ò Ò 9 CONT8 7 CONT7 6 G ND RF COM

RN2226

Abstract: 2sa1015 sot-23 rn4601 diode 2sa1015
Contextual Info: B ia s R e s ì s t o ! B u ilt-in T ra n s is to r B R T General Use Type F6 Upper side: Similar to 2SC1815(NPN) Middle side: Similar to 2SC1815 + 2SA1015{NPN+PNP) Lower side: Similar to 2SA1015(PNP) 50 100 Similar TR V c e o (V ) Rating lcMAX(mA) Package

1BW TRANSISTOR

Abstract: C2E1 F6-8R06KF
Contextual Info: T - 3 9 - 3 f F6-8R06KF SSE EU P EC D 34032T7 □□□□Ebb Transistor Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Maximum rated values 600 V 8 A 16 A 50 W tv jo p ts tg = 1ms IcR M tp Ptot t c = 25°C *U P E C 1 50 - 4 0 /+ 150

ultra low drop forward voltage diode

Abstract: KCF60A20E c60a
Contextual Info: FAST RECOVERY DIODE 6 0 A /2 0 0 V /trr : 50nsec K C F6 0 A20 E FEATURES o Sim ilar to TO-247AC x 2 Case o Dual Diodes-Cathode Common O U ltra-Fast Recovery OLow Forw ard V oltage Drop o High Surge Capability D im e n s io n s i n mm I n c h e s ] A p p ro x . N e t W e ig h t : 30 Grams

Contextual Info: FAST RECOVERY DIODE C6P10 F C6P20F F6 P 10 F F6P20F 6 .6 A /1 0 0 — 2 0 0 V /tr r : 30nsec FEATURES 0 S i m i l a r to T 0 - 2 2 0 A B Case °Fully Mold Isolation ° D ual D i o d e s F-Type - Cathode Common ° Ultra - Fast Recovery ° L o w F o r w a r d V o l t a g e Dro p

LT1231

Abstract: LT1280CS LT1280CN LT12811 LT1281 LT1130 LT1180 LT1181 LT1280 LT1281CS
Contextual Info: LINEAR r TECHNOLOGY j CORP u n xm TECHNOLOGY 20E D • S51fl4bfl T" l e ^ G - ö S 00040^ b ■ LT1280/LT1281 A d v a n ce d Low Power 5V RS232 Dual Driver/Receiver F6 A T U R C S D C S C R IP T IO A ■ 10 m A M ax Supply Current The LT1280 and L.T1281 are the only dual RS232 driver/