AMPLIFIR Search Results

Contextual Info: IC INFORMATION Function Type RF Amplifire for Digital Servo CD System TA2151FN C MOS Model 1/3 E XR-VS400 • Block Diagram 2001.8 IC INFORMATION Function Type RF Amplifire for Digital Servo CD System TA2151FN C MOS Model 2/3 XR-VS400 •Pin Function 2001.8

2SC4875

Contextual Info: 2SC4875 Silicon NPN Bipolar Transistor Application TO-92 VHF & UHF wide band amplifire Features • High gain bandwidth product fT = 8.5 GHz typ • High gain, low noise figure PG = 11.5 dB typ, NF = 1.3 dB typ at f = 900 MHz 1. Base 2. Emitter 3. Collector

transistor marking YD ghz

Abstract: 2SC4926
Contextual Info: 2SC4926 Silicon NPN Bipolar Transistor Application MPAK-4 VHF & UHF wide band amplifire Features 2 • High gain bandwidth product fT = 11 GHz typ • High gain, low noise figure PG = 16.5 dB typ, NF = 1.1 dB typ at f = 900 MHz 3 1 4 1. Collector 2. Emitter

zo 607

Abstract: zo 607 MA transistor zo 607 equivalent ZO 607 ZD 103 ma 2SC5080 ZD 607 ZD 103 zo 405 TRANSISTOR pc 135
Contextual Info: 2SC5080 Silicon NPN Epitaxial Transistor Application VHF & UHF wide band amplifire MPAK–4 Features 4 • High gain bandwidth product fT = 13.5 GHz typ • High gain, low noise figure PG = 18 dB typ, NF = 1.1 dB typ at f = 900 MHz 3 1 2 1. Collector 2. Emitter

if amplifire

Abstract: 2SC4874 1203 TO-92
Contextual Info: 2SC4874 Silicon NPN Bipolar Transistor Application TO-92 VHF & UHF wide band amplifire Features • High gain bandwidth product fT = 5.8 GHz typ • High gain, low noise figure PG = 10.0 dB typ, NF = 1.8 dB typ at f = 900 MHz 1. Base 2. Emitter 3. Collector

zo 107

Abstract: 2SC4902 NF 831
Contextual Info: 2SC4902 Silicon NPN Bipolar Transistor Application MPAK VHF & UHF wide band amplifire 3 Features • High gain bandwidth product fT = 6 GHz typ • High gain, low noise figure PG = 12.0 dB typ, NF = 1.6 dB typ at f = 900 MHz 1 2 SCALE : 4/1 1. Emitter 2. Base

ZO 150 74

Abstract: 2SC4901 CMA50
Contextual Info: 2SC4901 Silicon NPN Bipolar Transistor Application CMPAK VHF & UHF wide band amplifire Features 3 1 • High gain bandwidth product fT = 9 GHz typ • High gain, low noise figure PG = 13.0 dB typ, NF = 1.2 dB typ at f = 900 MHz 2 1. Emitter 2. Base 3. Collector

2SC4900

Contextual Info: 2SC4900 Silicon NPN Bipolar Transistor Application MPAK-4 VHF & UHF wide band amplifire 2 3 Features 1 • High gain bandwidth product fT = 9 GHz typ • High gain, low noise figure PG = 13.0 dB typ, NF = 1.2 dB typ at f = 900 MHz 4 SCALE : 4/1 1. Collector

if amplifire

Abstract: 2SC4784 2SC5049
Contextual Info: 2SC5049 Silicon NPN Bipolar Transistor Application VHF & UHF wide band amplifire MPAK Features 3 • High gain bandwidth product fT = 10 GHz typ • High gain, low noise figure PG = 15.0 dB typ, NF = 1.2 dB typ at f = 900 MHz 1 2 1. Emitter 2. Base 3. Collector

transistor CD 910

Contextual Info: HITACHI 2SC4901 -Silicon NPN Bipolar Transistor Application CMPAK VHF & UHF wide band amplifire Features 4 • High gain bandwidth product f-p = 9 GHz typ • High gain, low noise figure PG = 13.0 dB typ, NF = 1.2 dB typ at f = 900 MHz 1. Emitter 2. Base

transistor marking YA

Contextual Info: HITACHI 2SC5049 -Silicon NPN Bipolar Transistor Application VHF & UHF wide band amplifire M PA K Features <# • High gain bandwidth product f j = 10 GHz typ • High gain, low noise figure PG = 15.0 dB typ, NF = 1.2 dB typ at f = 900 MHz Table 1 Absolute Maximum Ratings Ta = 25 °C

transistor zo 607

Abstract: transistor ZO 607 MA 2SC 1022
Contextual Info: HITACHI 2S C 4988-Silicon NPN Bipolar Transistor Application VHF & UHF wide band amplifire Features • High gain bandwidth product fT = 8.5 GHz typ • High gain, low noise figure PG = 10.5 dB typ, NF = 1.3 dB typ at f = 9 0 0 MHz Table 1 Absolute M aximum Ratings Ta = 25°C

Contextual Info: HITACHI 2SC4904-Silicon NPN Bipolar Transistor Application MPAK VHF & UHF wide band amplifire 3 Features 4P • High gain bandwidth product fT = 5.8 GHz typ • High gain, low noise figure PG = 12.0 dB typ, NF = 1.6 dB typ a tf = 900M H z 1. Emitter 2. Base

Contextual Info: HITACHI 2SC4899-Silicon NPN Bipolar Transistor Application CMPAK VHF & UHF wide band amplifire Features • High gain bandwidth product fT = 9 GHz typ • High gain, low noise figure PG = 14.0 dB typ, NF = 1.2 dB typ at f = 900 MHz t Table 1 Absolute Maximum Ratings Ta = 25°C

transistor 2sc 1038

Contextual Info: H ITACH I 2SC4992 -Silicon NPN Bipolar Transistor Application VHF & UHF wide band amplifire C M P A K -4 Features •4 • High gain bandwidth product fr = 9.5 GHz typ • High gain, low noise figure PG = 15.0 dB typ, NF = 1.2 dB typ at f = 900 MHz 3

2SC4905

Contextual Info: 2SC4905 Silicon NPN Bipolar Transistor Application CMPAK VHF & UHF wide band amplifire Features 3 1 • High gain bandwidth product fT = 5.8 GHz typ • High gain, low noise figure PG = 12.0 dB typ, NF = 1.6 dB typ at f = 900 MHz 2 1. Emitter 2. Base 3. Collector

AMPLIFIRE

Abstract: 2SC5080 2SC5081
Contextual Info: 2SC5081 Silicon NPN Epitaxial Transistor Application VHF & UHF wide band amplifire CMPAK-4 Features 4 • High gain bandwidth product fT = 13.5 GHz typ • High gain, low noise figure PG = 18 dB typ, NF = 1.1 dB typ at f = 900 MHz 3 1 2 1. Collector 2. Emitter

2442 IC marking

Abstract: 2SC4906
Contextual Info: 2SC4906 Silicon NPN Bipolar Transistor Application CMPAK VHF & UHF wide band amplifire Features 3 1 • High gain bandwidth product fT = 5.8 GHz typ • High gain, low noise figure PG = 12.0 dB typ, NF = 1.6 dB typ at f = 900 MHz 2 1. Emitter 2. Base 3. Collector

AK2910T

Contextual Info: [AK2910] AK2910 Zero Drift operational amplifiers Feature AK2910 is the single channel CMOS operational amplifires which is available to output with very low input offset voltage ±1.0 V and near zero input offset dirft. It’s operated with very small current consumptions, 800μA typ. (VDD:5.0V), which is available to operate full swing

RF amplifire

Abstract: HK1005 NJG1312PC1 FFP16 FFP16-C1 GRM36
Contextual Info: NJG1312PC1 SPDT SWITCH DRIVER AMPLIFIRE GaAs MMIC nGENERAL DESCRIPTION NJG1312PC1 is a GaAs MMIC mainly designed for CDMA 800MHz band cellular phone handsets. This Ic features low current consumption and variable gain. An ultra small & thin FFP package is adopted.

Contextual Info: [AK2910] AK2910 Zero Drift operational amplifiers Feature AK2910 is the single channel CMOS operational amplifires which is available to output with very low input offset voltage ±1.0 V and near zero input offset dirft. It’s operated with very small current consumptions, 800μA typ. (VDD:5.0V), which is available to operate full swing

Contextual Info: ASAHI KASEI [AK2920] AK2920 Zero Drift operational amplifiers Feature AK2920 is the dual channel CMOS operational amplifires which is available to output with very low input offset voltage +/- 1.0 V and near zero input offset dirft. It’s operated with very small current consumptions, 800μA typ./ch (VDD:5.0V), which is available to operate full

Contextual Info: [AK2922T] AK2922T Zero Drift operational amplifiers Feature AK2922T is the dual channel CMOS operational amplifires which is available to output with very low input offset voltage ± 1.0 V and near zero input offset dirft. It’s operated with very small current consumptions, 1.05mA typ./ch (VDD:5.0V), which is available to operate full

Amplifire

Contextual Info: HITACHI 2SC4964-Silicon NPN Bipolar Transistor Application VHF & UHF wide band amplifire MPAK Features <# • Low Ron and high performance for RF switch. • Capable of high density mounting. Table 1 Absolute Maximum Ratings Ta = 25 °C Item Symbol