F50Q Search Results

thyristor t 250 n 1200

Abstract: control motor ac 3-phase thyristor cdi TOSHIBA STUD TYPE Thyristor TOSHIBA THYRISTOR motor 3 phase thyristor F80Q
Contextual Info: 9097250 TOS HI BA <D I S C R E T E / O P T O 39C 02352 D ‘7 '< 3 fc 5 W 7 THYRISTOR STACK AC POWER CONTROL STACK) TOSHIBA {DI SC RETE/ OP TO} IH ]>F| TCHTSSO 000S3S2 S 1. STUD TYPE THYRISTOR STACK 3 PHASE SF300J6S1, SF300Q6S2, SF300J6S3 The SF300J6S1, SF300Q6S2 and

Marking ANs

Abstract: Transistor C 5198 b 514 transistor BFP450
Contextual Info: SIEMENS SIEGET 25 BFP 450 NPN Silicon RF Transistor • For medium power amplifiers • Compression point P. 1dB = +19 dBm at 1.8 GHz maximum available gain Gma = 14 dB at 1.8 GHz Noise figure F = 1.25 dB at 1.8 GHz • Transition frequency fT = 24 GHz • Gold metalization for high reliability

Contextual Info: 9097250 TOSHIBA CDISCRETE/OPTO f h y k i s t Q R STACK AC POWER 39C 0 2 3 5 0 0 7- 2 5 W 7 CONTROL STACK) TOSHIBA {D IS CRETE/O PT0> 1. STUD T Y P t I M Y K l s i u n o m v / i \ SINGLE PHASE SF300J2H1, SF300Q2H2~ The SF300J2H1 and SF300Q2H2 series thyristor sta­

XAPP031

Contextual Info: £ XILINX XC4000E and XC4000X Series Field Programmable Gate Arrays November 10,1997 Version 1.4 Product Specification XC4000E and XC4000X Series Features Low-Voltage Versions Available Note: XC4000 Series devices described in this data sheet include the XC4000E family and XC4000X Series.

SIEMENS thyristor

Abstract: transistor smd AFE smd transistor G9
Contextual Info: SIEMENS 1 Technical Information Type Designation in Accordance with Pro Electron This type designation applies to small-signal semiconductor components - in contrast to integrated circuits, multiples of these components and semiconductor chips. The number of the basic type consists of: two letters and a three-digit code.

BFT65

Abstract: D1279 Siemens 1414 D1275 germanium Germanium drift transistor diode a811 Siemens Halbleiter germanium transistor legiert
Contextual Info: Table of Contents Selection Guide Ordering Codes Inhaltsverzeichnis Typeniibersicht Bestellnummern Scope of Applications Technical Information Quality Specifications Einsatzhinweise Technische Angaben Qualitatsangaben Package Outlines Mounting Instructions

Contextual Info: 7 8 THIS DRAWING IS UNPUBLISHED. Z rA COPYRIGHT - RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. 4 T 2 3 - L0C DIST AD ALL RIGHTS RESERVED. R E V IS IO N S 00 P LTR AD /\ 0.64 [.025] 0.64 [.025] DESCRIPTION REV PER DATE DWN RB JG 15FEB06 0 G 3 C —0 7 8 9 —0 4

CFY77-10

Abstract: HEMT HEMT marking K 036 906 051 VS005553
Contextual Info: SIEM ENS AIGaAs / InGaAs HEMT CFY 77 Datasheet Features * Very low noise *Very high gain * For low noise front end amplifiers up to 20 GHz * For DBS down converters VS005553 ESD: Electrostatic discharge sensitive device, observe handling precautions! Type

macbook pro 13

Abstract: mb166 ASUS eee PC 900 dell d630 toshiba 8893 macbook AMD turion 64 X2 ASUS X50Z compaq 510 ACER Aspire JDW50
Contextual Info: Acer Acer Acer Acer Aspire 5230 JAWD0 Aspire 5410T (MS2272) Aspire 5410TZ (MS2272) Aspire 5520 series (ICW50) 13.71 7.27 7.27 10.16 1.34 1.38 1.38 1.44 Acer Acer Acer Acer Acer Acer Acer Acer Acer Acer Acer Acer Acer Acer Acer Aspire 5635 (ZR6) Aspire 5710 series (JDW50)

208H

Contextual Info: 2. Schematic: 1. M e c h a n ic a l D i m e n s i o n s : o - o- «10.535 0.400 ±0.020 3. E l e c t r i c a l S p e c i f i c a t i o n s : @25 C OCL: 5 0 0 u H ± 1 0% ®10KHz 0.10V *1.385 Irated: 1.5Adc apx 15% drop in initial L DCR: 0 .2 1 0 Ohms Max

GaAs FET cfy 14

Contextual Info: SIEMENS CFY 35 GaAs FET Datasheet * Low noise * High gain * For iow-noise front end amplifiers * For DBS down converters ESO: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code tape and reel Pin Configuration

Contextual Info: SIEMENS SIEGET 25 BFP 450 NPN Silicon RF Transistor • For medium power amplifiers • Compression point P.1dB = +19dB m at 1.8 GHz maximum available gain Gma = 14 dB at 1.8 GHz Noise figure F = 1.25 dB at 1.8 GHz • Transition frequency f j = 24 GHz • Gold metalization for high reliability

BF 914 transistor

Abstract: transistor R 405 transistor bf 405 transistor 1546 405 marking transistor s parameters noise transistor BF 914
Contextual Info: SIEMENS SIEGET 25 BFP 405 NPN Silicon RF Transistor • For low current applications • For oscillators up to 12 GHz • Noise figure F = 1.15 dB at 1.8 GHz outstanding Gms = 22 dB at 1.8 GHz • Transition frequency f j = 25 GHz • Gold metalization for high reliability

SIEMENS 230 92 O

Abstract: siemens gaas fet gaas fet marking a FET GAAS marking a CFY 18 siemens 230 98 O siemens 230 99 o CFY30 S11 SIEMENS
Contextual Info: SIEMENS CFY30 GaAs FET Datasheet * Low noise Fmjn= 1.4 dB @ 4 G H z * High gain ( 11.5 dB typ. @ 4 G H z) * For oscillators up to 12 GHz * For amplifiers up to 6 GHz * Ion implanted planar structure * Chip all gold metallization * Chip nitride passivation

TRANSISTOR 131-6 BJ 946

Abstract: transistor bc 564 transistor Bc 949 datenblatt TRANSISTOR BC 545 MARKING CODE AGS bsp 2000 siemens datenbuch bft99 mmic SMD amplifier marking code 19s TRANSISTOR SMD MARKING CODE bc ru DIODE smd marking 22-16
Contextual Info: Typeniibersicht Selection Guide Bestellnummern Ordering Codes Bestempelung Marking Catalog Technische Angaben « Technical Information Qualitatsangaben Quality Specification Gehause Package Outlines Verarbeitungshinweise Mounting Instructions Verpackungshinweise