F3B DIODE Search Results
F3B DIODE Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| CEZ6V8 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 6.8 V, ESC | Datasheet | ||
| CUZ8V2 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 8.2 V, USC | Datasheet | ||
| CEZ6V2 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 6.2 V, ESC | Datasheet | ||
| CUZ6V8 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 6.8 V, USC | Datasheet | ||
| CEZ5V6 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 5.6 V, ESC | Datasheet |
F3B DIODE Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
MC910
Abstract: lm339 pwm diagram quanta AOD4411 mosfet ao4418 Socket AM2 af1 cn21 100v 10p quanta computer intel p35 conexant cx20493 reference design
|
Original |
133mhz915gm/gmlrtl8100s10k/f+14 | |
SONY KNC 201 15
Abstract: knc 201 39 KNC 201 KNC 201 08 xo 405 mf tc144e KNC 201 35 conexant cx20493 reference design KNC 201 6 ga g31
|
Original |
133mhz915gm/gmlrtl8100s10mil+15 | |
Zener Diode 7v
Abstract: temperature compensated zener diode 1N91B
|
OCR Scan |
ln91i5bzener diode 7vtemperature compensated zener diode1n91b | |
|
Contextual Info: KAI-04070 IMAGE SENSOR 2048 H X 2048 (V) INTERLINE CCD IMAGE SENSOR JUNE 12, 2014 DEVICE PERFORMANCE SPECIFICATION REVISION 2.1 PS-0145 KAI-04070 Image Sensor TABLE OF CONTENTS Summary Specification . 7 |
Original |
kai-04070ps-0145 | |
|
Contextual Info: KAI-02170 IMAGE SENSOR 1920 H X 1080 (V) INTERLINE CCD IMAGE SENSOR AUGUST 14, 2013 DEVICE PERFORMANCE SPECIFICATION REVISION 1.0 PS-0146 KAI-02170 Image Sensor TABLE OF CONTENTS Summary Specification . 7 |
Original |
kai-02170ps-0146 | |
|
Contextual Info: KAI-02170 IMAGE SENSOR 1920 H X 1080 (V) INTERLINE CCD IMAGE SENSOR JUNE 14, 2013 PRELIMINARY DEVICE PERFORMANCE SPECIFICATION REVISION 0.7 PS-0146 This document contains preliminary specifications and design goals for a prototype product and is subject to change |
Original |
kai-02170ps-0146 | |
|
Contextual Info: 1 9 8 9 9 6 3 CENTRAL SEMICONDUCTOR_ _ e oì e3i t.i geErâBs@Bî€3ageê@p m m - 61C 00271 ' T H I - J f de I l'un it 3 0000271 t f e@fiü£SP«8l Ceserai g@&îiië@Eî^iseÊ©r corg . f f lp Central Semiconductor Corp. 145 Adams Avenue |
OCR Scan |
cbr300000s23o-105o-106 | |
|
Contextual Info: 1 9 8 9 9 6 3 CENTRAL SEMICONDUCTOR_ _ e oì e3i geErâBs@Bî€3ageê@p e@fiü£SP«8l mm- t.i Ceserai g@&îiië@Eî^iseÊ©r corg . de I l'un it 3 0000271 t f f l p Central Semiconductor Corp. 61C 00271 ' T H I - J f w f 1W9U1B 1N9^2B 1W9^3B |
OCR Scan |
cbr10seriescbr25ser/escbr12cbr30+3 | |
F3D DIODE
Abstract: CD214C-F350 F3400 F3B DIODE F3400 rs GENERAL SEMICONDUCTOR DIODE SMC 400
|
Original |
cd214c-f350f3600do-214abf350-f3200+5 | |
F3150
Abstract: 214B CD214B-F350 F3400 diode marking 33a on semiconductor DO-214AA diode F3B DIODE F3400 rs
|
Original |
cd214b-f350f3600do-214aaf350-f3200+8 | |
CD214B-F350
Abstract: F3300 214B F3400
|
Original |
cd214b-f350f3600do-214aaipa0522+3 | |
marking diode DO-214AB
Abstract: CD214C-F350 F3400 F3400 rs GENERAL SEMICONDUCTOR DIODE SMC 400 F3D DIODE
|
Original |
cd214c-f350f3600do-214abf350-f3200+5 | |
CD214C-F350
Abstract: F3400 SMC DO-214AB F3400 rs F3D DIODE
|
Original |
cd214c-f350f3600do-214abrepetitivef3600+5 | |
|
Contextual Info: T PL IA N M CO *R oH S Features • RoHS compliant* ■ Glass passivated chip ■ Low reverse leakage current ■ Low forward voltage drop ■ High current capability CD214C-F350~F3600 Fast Response Rectifiers General Information The markets of portable communications, computing and video equipment are challenging the semiconductor industry to develop |
Original |
cd214c-f350f3600do-214abrs-481-a | |
|
|
|||
KAI-29050
Abstract: CXA 1238 S KAI-16070 xldr Color Filter Array CFA linear technology catalog 29050 cba
|
Original |
kai-16070ps-0010mtd/ps-1248kai-29050+5 | |
ic 74153 Multiplexer
Abstract: application of ic 74153 ic 74153 Multiplexer pin diagram pin DIAGRAM OF IC 74153 IC 74153 Multiplexer 74153 74153 multiplexer ic IC 74LS153 pin diagram ic pin configuration 74153 74153 equivalent
|
OCR Scan |
ls15374ls15374s1531n916+12 | |
|
Contextual Info: 74LS353 Signetics Multiplexer Dual 4-Input Multiplexer 3-State Product Specification Logic Products FEATURES • Inverting version of 'LS253 • 3-State outputs for bus interface and multiplex expansion • Common Select inputs • Separate Output Enable inputs |
OCR Scan |
74ls353ls253n74ls353nn74ls353d+3 | |
|
Contextual Info: KAI-16070 IMAGE SENSOR 4864 H X 3232 (V) INTERLINE CCD IMAGE SENSOR JUNE 4, 2014 DEVICE PERFORMANCE SPECIFICATION REVISION 2.1 PS-0010 KAI-16070 Image Sensor TABLE OF CONTENTS Summary Specification . 5 |
Original |
kai-16070ps-0010 | |
|
Contextual Info: KAI-16070 IMAGE SENSOR 4864 H X 3232 (V) INTERLINE CCD IMAGE SENSOR APRIL 29, 2013 DEVICE PERFORMANCE SPECIFICATION REVISION 2.0 PS-0010 KAI-16070 Image Sensor TABLE OF CONTENTS Summary Specification . 5 |
Original |
kai-16070ps-0010 | |
TPCF8102
Abstract: A2430
|
Original |
tpcf8102a2430 | |
TPCF8102Contextual Info: TPCF8102 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOS III TPCF8102 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 24 mΩ (typ.) • High forward transfer admittance: |Yfs| = 14 S (typ.) |
Original |
tpcf8102 | |
TPCF8102Contextual Info: TPCF8102 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOS III TPCF8102 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 24 mΩ (typ.) · High forward transfer admittance: |Yfs| = 14 S (typ.) |
Original |
tpcf8102 | |
|
Contextual Info: TPCF8102 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOS III TPCF8102 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 24 mΩ (typ.) • High forward transfer admittance: |Yfs| = 14 S (typ.) |
Original |
tpcf8102 | |
TPCF8102Contextual Info: TPCF8102 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOS III TPCF8102 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 24 mΩ (typ.) • High forward transfer admittance: |Yfs| = 14 S (typ.) |
Original |
tpcf8102 | |