F10HZ Search Results

47 microfarad 26v capacitor

Abstract: sk181 SK 3050 R
Contextual Info: AÆ* M .S . K E N N E D Y C O R P . A161 aA HIGHPOWER AMPLIFIER 315 699-9201 8170 Thompson Road •Cicero, N.Y. 13039 FEATURES: • • • • • • High Output Current Wide Supply Range Low Cost Class "C" Output Stage Wide Common Mode Range Low Quiescent Current

I670

Contextual Info: ¿»etír 5- H ì M L 2005 003138 jr 2 5 1091 o?- 5V - 200MA MONOLITHIC VOLTAGE REGULATOR v -¿va? VS*! H -i¡ FEATURES T ' * LOW INPUT VOLTAGE REQUIREMENT * LOW OUTPUT IMPEDANCE 1 . Input * OUTPUT SHORT CIRCUIT PROTECTION 2. Output 3. Ground * HIGH TEMPERATURE STABILITY

BFY640-04

Abstract: bfy640 BFY640 ES
Contextual Info: BFY640 NPN Silicon Germanium RF Transistor Preliminary data • High gain low noise RF transistor • Provides outstanding performance for a wide range of wireless applications • Outstanding noise figure F = 0.8 dB at 1.8 GHz Outstanding noise figure F = 1 dB at 6 GHZ

OPA77

Contextual Info: OPERATIONAL AMPLIFIERS AVAILABLE IN DIE Precision OPERATIONAL AMPLIFIER APPLICATIO N S FEA TU R ES • LOW OFFSET VOLTAGE: 10jiV max • PRECISION INSTRUMENTATION • LOW DRIFT: 0.1nV/°C • DATA ACQUISITION • HIGH OPEN-LOOP GAIN: 130dB min • TEST EQUIPMENT

Contextual Info: TO S H I B A HSE D DISCRETE/OPTO • T Q T 7 E 5 D DDlflODD T « T O S M TOSHIBA TRANSISTOR - YTS3904 SILICON NPN EPITAXIAL TYPE (PCT PROCESS) FOR GENERAL PURPOSE USE SWITCHING AND AMPLIFIER Unit in mm APPLICATIONS. FEATURES: . Low Leakage Carrent : IcEV“50nA(Max.), IgEV^SOnAiMax.)

Contextual Info: 1 Ç. K in Precision INSTRUMENTATION AMPLIFIER FEATURES DESCRIPTION • • • • The INA114 is a low cost, general purpose instrumen­ tation amplifier offering excellent accuracy. Its versa­ tile 3-op amp design and small size make it ideal for a wide range of applications.

Contextual Info: JÄH 5 1993 B U R R -B R O W N • s Ü INA114 l Precision INSTRUMENTATION AMPLIFIER DESCRIPTION FEATURES • • • • • • • • The INA114 is a low cost, general purpose instrumen­ tation amplifier offering excellent accuracy. Its versa­ tile 3-op amp design and small size make it ideal for a

LH0032

Contextual Info: FET INPUT D IF F E R E N T IA L OP-AM P 0032 M S KEN N ED Y CO RP 8170 Thompaon Road Cicero, N.Y. 13039 315 699-9201 FEATURES: MfL-STD-1772 CERTIFIED • Fast Slaw Rate - 650 V///S "fyp. * FET Input * Wide Bandwidth * Electrically laolatad Caae * Induatry Wide Pin Compatible 0032 Upgrade

2N5210

Abstract: 2N5086 2N5087 2N5209 2N5210 c 2N 5209 ebc
Contextual Info: 2N5209 • 2 N 5210 NPN SILICON AF LOW NOISE SMALL SIGNAL TRANSISTORS 1 CASE TO-92A THE 2N5209, 2N5210 ARE NPN SILICON PLANAR EPITAXIAL TRANSISTORS POR USE IN AP LOW NOISE PREAMPLIFIERS. THEY ARE COMPLEMENTARY TO THE PNP TYPE 2N5086, 2N5087. EBC ABSOLUTE MAXIMUM RATINGS

Contextual Info: BFY640 NPN Silicon Germanium RF Transistor Preliminary data • High gain low noise RF transistor • Provides outstanding performance for a wide range of wireless applications • Outstanding noise figure F = 0.8 dB at 1.8 GHz Outstanding noise figure F = 1 dB at 6 GHZ

a 1712 8pin

Contextual Info: ADVANCED LINEAR DEVICES E> A d va n c e d L in ea r D e v ic e s 025b0fl3 0000177 5T3 • S3E D ALDI 712A/ALD1712B ALDI 712 PRELIMINARY RAIL TO RAIL PRECISION OPERATIONAL AMPLIFIER GENERAL DESCRIPTION PIN CONFIGURATION The ALD 1712 is a monolithic precision operational amplifier intended

Contextual Info: i TOSHIBA 9NA19K SILICON PNP EPITAXIAL TYPE PCT PROCESS ZN41Z6 FOR GENERAL PURPOSE USE SWITCHING AND AMPLIFIER APPLICATIONS. FEATURES: . Low Leakage Current ; IcBO=-50nA(Max.) @ VcB“_20V lEBO=-50nA(Max.)

T092

Abstract: ZR78L ZR78L028 ZR78L03 ZR78L033 ZR78L04 ZR78L05 ZR78L06 ZR78L08 ZR78L10
Contextual Info: 2.85 TO 10 VOLT FIXED POSITIVE LOCAL VOLTAGE REGULATOR ZR78L SERIES ISSUE 1 - OCTOBER 1995 DEVICE DESCRIPTION FEATURES The ZR78L Series three terminal fixed positive voltage regulators feature internal circuit current lim it and thermal shutdown making the devices

YTS3904

Abstract: YTS3906
Contextual Info: TOSHIBA TRANSISTOR YTS3904 SILICON NPN EPITAXIAL TYPE PCT PROCESS FOR GENERAL PURPOSE USE SWITCHING AND AMPLIFIER Unit in mm APPLICATIONS. FEATURES : . Low Leakage Current : !cEV*50nA(Max.), lBEV*50aA(Max.) <3 V c e -30V, V BE-3V . Excellent DC Current Gain Linearity

032 b

Contextual Info: A /fC ff M s fc o \ FET INPUT D IF F E R E N T IA L O P -A M P 8170 Thompson Road • Cicero, N.Y. 13039 V O t. 315 699-9201 FEATURES: • • • • • • Fast Slew Rate Fast Settling Time FET Input Wide Bandwidth Electrically Isolated LH0032 Pin Compatible Upgrade

Contextual Info: M atron p ro d u c t D e r i II A T H D K tlb U L A IU K , 1177 SLl/E HERON BLVD. • RIVIERA BEACH, FLORIDA 33404 TEL: 407 848-4311 • TLX: 51-3435 «FAX: (407) 863-5946 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TOTAL POWER DISSIPATION PD UNITS INPUT TO OUTPUT

ADCE12D3

Abstract: adc-econoverter ADC856C Datel SHM-4 AM543MC vfv-10k intersil AM-452-2M DAC-IC10BC ROJ-20 AM452-2M
Contextual Info: INNOVATION AND EXCELLENCE IN PRECISION DATA ACQUISITION C O M P A N Y H IS T O R Y Founded in 1970, DATEL is a multinational com pany located approxim ately 35 miles south of Boston in Mansfield, M assachusetts. O ur modern 180,000 square-foot facility houses our adm inistrative offices, com ponents and sub-system s engineering

ISO220

Abstract: MB39A132 ML2005 ML2005C ML2005P 38b3
Contextual Info: öeffr- sSEP 2 5 0& M L 2005 003138 1991 £ Jjjsra 5V - 200MA MONOLITHIC VOLTAGE REGULATOR >1^1 rH r-vJ l c n . 1 = = | i .j: jj J f r ~ X: CyiSE TO-59 FEATURES TP0-220B ' * LOW INPUT VOLTAGE REQUIREMENT 1. Input 2. Output 3. Ground * LOW OUTPUT IMPEDANCE

BFY193C

Contextual Info: BFY193C HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor  For low noise, high-gain amplifiers up to 2GHz.  For linear broadband amplifiers  Specified 1/f Noise  Hermetically sealed microwave package   4 3 1 2