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BFY640 Datasheets (2)

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Infineon Technologies

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
BFY640 (ES)		Infineon Technologies	HiRel Silicon Bipolar Transistors; Package: --; Package: Micro-X; V_CEO (max): 4.0 V; I_C(max): 50.0 mA; P_tot (max): 200.0 mW; f_T (typ): 40.0 GHz;	Original	PDF	45.43KB	7
BFY640 (P)		Infineon Technologies	HiRel Silicon Bipolar Transistors; Package: --; Package: Micro-X; V_CEO (max): 4.0 V; I_C(max): 50.0 mA; P_tot (max): 200.0 mW; f_T (typ): 40.0 GHz;	Original	PDF	45.43KB	7

BFY640 Price and Stock

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Infineon Technologies AG


Infineon Technologies AG BFY64004SAMB4SA1 - Gel-pak, waffle pack, wafer, diced wafer on film (Alt: BFY64004SAMB4SA1)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	BFY64004SAMB4SA1	Waffle Pack				1 - 10 - 100 - 1000 - 10000 -	Get Quote
Infineon Technologies AG BFY640-04(P) NPN Silicon Germanium RF Transistor (Alt: SP000668264)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
EBV Elektronik	BFY640-04(P)			26 Weeks	1	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Infineon Technologies AG BFY640-04(ES) Trans RF BJT NPN 4V 005A 4Pin MicroX (Alt: SP000668266)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
EBV Elektronik	BFY640-04(ES)			26 Weeks	1	1 - 10 - 100 - 1000 - 10000 -	Get Quote

BFY640 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
BFY640-04 Abstract: bfy640 BFY640 ES Contextual Info: BFY640 NPN Silicon Germanium RF Transistor Preliminary data • High gain low noise RF transistor • Provides outstanding performance for a wide range of wireless applications • Outstanding noise figure F = 0.8 dB at 1.8 GHz Outstanding noise figure F = 1 dB at 6 GHZ	Original	bfy640 bfy640-04 bfy640 es	PDF
Contextual Info: BFY640 HiRel NPN Silicon Germanium RF Transistor • HiRel Discrete and Microwave Semiconductor  High gain low noise RF transistor  High maximum stable gain: Gms 24dB at 1.8 GHz   Noise figure F = 0.8 dB at 1.8 GHz Noise figure F = 1.1 dB at 6 GHz	Original	bfy640 bfy640b	PDF
Contextual Info: BFY640 NPN Silicon Germanium RF Transistor Preliminary data • High gain low noise RF transistor • Provides outstanding performance for a wide range of wireless applications • Outstanding noise figure F = 0.8 dB at 1.8 GHz Outstanding noise figure F = 1 dB at 6 GHZ	Original	bfy640	PDF
Contextual Info: BFY640 HiRel NPN Silicon Germanium RF Transistor • HiRel Discrete and Microwave Semiconductor  High gain low noise RF transistor  High maximum stable gain: Gms 24dB at 1.8 GHz   Noise figure F = 0.8 dB at 1.8 GHz Noise figure F = 1.1 dB at 6 GHz	Original	bfy640 bfy640b	PDF
npn transistor high current Abstract: transistor "micro-x" "marking" 3 BFY640 germanium microwave Micro-X Marking E RF TRANSISTOR NPN MICRO-X low noise Micro-X marking "K" Contextual Info: BFY640 HiRel NPN Silicon Germanium RF Transistor • HiRel Discrete and Microwave Semiconductor  High gain low noise RF transistor  High maximum stable gain: Gms 24dB at 1.8 GHz   Noise figure F = 0.8 dB at 1.8 GHz Noise figure F = 1.1 dB at 6 GHz	Original	bfy640 bfy640b npn transistor high current transistor "micro-x" "marking" 3 +4germanium microwave micro-x marking e rf transistor npn micro-x low noise micro-x marking "k	PDF
600V igbt dc to dc buck converter Abstract: TRANSISTOR SMD CODE PACKAGE SOT89 bts 2140 1b data sheet TRANSISTOR SMD CODE PACKAGE SOT23 PSB 6970 HL V1.3 PEF 24628 E V1.2-G infineon psb 6970 PEF 4265 T V2.1 HT 1200-4 SLB 9635 Contextual Info: Infineon Product Catalog for Distribution 2008 Infineon Product Catalog for Distribution 2008 Product Catalog for Distribution Ordering No. B192-H6780-G11-X-7600 Published by Infineon Technologies AG [ www.infineon.com ] [ www.infineon.com/distribution ]	Original	b192-h6780-g11-x-7600 sp000008186 vdsl6100i-e 600v igbt dc to dc buck converter +9transistor smd code package sot89 bts 2140 1b data sheet transistor smd code package sot23 psb 6970 hl v1.3 pef 24628 e v1.2-g infineon psb 6970 pef 4265 t v2.1 ht 1200-4 slb 9635	PDF