EXCEL Search Results

2sc3310

Contextual Info: 2SC3310 SILICON NPN TRIPLE DIFFUSED TYPE PCT PROCESS INDUSTRIAL APPLICATIONS U nit in mm SW ITCH IN G REGULATOR A N D HIGH VOLTAGE SW ITCHIN G APPLICATIONS. HIGH SPEED D C-DC CONVERTER APPLICATIONS. • • Excellent Switching Times : tr =1.0//s (Max.), tf=1.0/us (Max.) at Iç = 4A

C 34 F

Abstract: 1SV274 D234
Contextual Info: SILICON EPITAXIAL PLANAR TYPE VARIABLE CAPACITANCE DIODE 1SV274 C A T V T U N IN G . • • • • High Capacitance Ratio : C2V / C25V = 12.5 Typ. Low Series Resistance : rs = 0.6f2 (Typ.) Excellent C-V Characteristics, and Small Tracking Error. Small Package

2SD1294

Contextual Info: SILICON NPN TRIPLE DIFFUSED TYPE PCT PROCESS 2SD1294 POWER REGULATOR FOR LINE OPERATED TV. Unit in mm # 3 .2 ± Q 2 FEATURES : . Excellent Wide Safe Operating Area (80 W.s z at Tc=25°C) . eo . Included Abalanche Diode : Vz=60±15V . High DC Current Gain

TRANSISTOR Marking XB PNP

Abstract: YTS3906
Contextual Info: TOSHIBA TRANSISTOR YTS3906 SILICON PNP EPITAXIAL TYPE PCT PROCESS FOR GENERAL PURPOSE USE SWITCHING AND AMPLIFIER APPLICATIONS. FEATURES: . Low Leakage Current : IcEV“” 50nA(Max.), IuEV“ 50nA(Max.) 0 VCE— 30V, VBE-3V . Excellent DC Current Gain Linearity

TLE2062B

Contextual Info: TLE2062, TLE2062A, TLE2062B, TLE2062Y EXCALIBUR JFET-INPUT HIGH-OUTPUT-DRIVE jiPOW ER DUAL OPERATIONAL AM PLIFIERS D3346, OCTOBER 1989 - REVISED NOVEMBER 1991 availablefeatures • Excellent Output Drive Capability V 0 = ± 2.5 V Min at R|_ = 100 Q , VC C ± = ± 5 V

Contextual Info: SILICON NPN TRIPLE DIFFUSED TYPE 2SC4157 SWITC HIN G REGULATOR AND HIGH VOLTAGE SWITCHI NG INDUSTRIAL APPLICATIONS Unit in nun APPLICATIONS. HIGH SPEED DC-DC CONVERTER APPLICATIONS. . Ç63 .2 ± 0 .2 1 5-9MAX. . Excellent Switching Times : tr= 0 . 5 y s M a x . , tf=0.5(Js(Max.) (lc=5A)

2SC31

Abstract: m15t
Contextual Info: 2SC31 22 SILICQN NPN EPITAXIAL PLANAR TYPE t r a n s is t o r T V V H F RF A M P LIF IE R A PP LIC A T IO N S . FEATURES : • High Gain : Gpe = 24dB Typ. (f=200M Hz) • Low Noise : NF = 2.0dB (Typ.) (f=200MHz) • Excellent Forward AGC Characteristics.

JFET 4405

Abstract: tle20641
Contextual Info: TLE2064M, TLE2064AM EXCALIBUR JFET-INPUT HIGH-OUTPUT-DRIVE UPOWER QUAD OPERATIONAL AMPLIFIERS D3367, N O V EM B ER 1989 - R E V IS E D O C T O B E R 1991 available features Excellent Output Drive Capability V 0 = ± 2.5 V Min at R L = 100 £2, VCC± = ± 5 V

TLRA130B

Contextual Info: T O S H IB A íD IS C R E T E /O P T O } 9 B E B 9097250 TOSHIBA DISCRETE/OPTO 99D 17195 D-p^l-ai TLRAI3 0 GaAIAs RED LIGHT EMISSION FEATURES: • Excellent Bright Red • All Plastic Mold Type: Colorless Clear Lens • Low Drive Current, Practical Brightness are Achieved

TA7060

Abstract: TA7060AP ta706
Contextual Info: TOSHIBA-, EL ECT RONIC DE 9097247 TOSHIBA. ÏT~| TCHTSM? ñ | ELECTRONIC 02E 16872 D TA7060AP FOR FM IF AMPLIFIER Unit in mm FOR TV SIF AMPLIFIER 17.8 M A X . Recommended for Wide and Narrow Bands Amplifier. . Excellent FM/IF Limiter Circuit. MAXIMUM RATINGS Ta=25 C

2SC3475

Contextual Info: SILICON NPN TRIPLE DIFFUSED TYPE 2SC3475 INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED SWITCHING APPLICATIONS. HIGH SPEED DC-DC CONVERTER APPLICATIONS. FEATURES : . Excellent Switching Times : tf=0.5tis Max. (Ic=2A) . Low Collector Saturation Voltage : VCE(sat)=0.6V(Max.) (Ic=2A)

TLC2425

Abstract: TLE24251
Contextual Info: TLE2425, TLE2425Y PRECISION VIRTUAL GROUNDS SLOSD65B - MARCH 1991 - REVISED AUGUST 1995 Excellent Regulation Characteristics - Output Regulation -4 5 nV Typ at l0 = 0 to -1 0 mA +15 nV Typ at Iq - 0 to +10 mA - Input Regulation = 1.5 ¿iV/V Typ Low-lmpedance Output. . . 0.007512 Tÿp

2N4403

Contextual Info: TOSHIBA 2N4403 Transistor Silicon PNP Epitaxial Type For General Purpose Switching and Amplifier Applications Features • Low Leakage Current - ICEV = -100nA Max. , IBEV = 100nA (Max.) @ VCE = -35V, VBE = 0.4V • Excellent DC Current Gain Linearity • Low Saturation Voltage

Contextual Info: TO SH IBA TEN TATIVE TLRA291P T O S H IB A LED L A M P G a A i As RED LIGHT EM ISS IO N TLRA291P PA NEL CIRC U IT IN D IC A T O R • • • • U n it in m m Excellent Bright Red All Plastic Mold Type : Colorless Clear Lens Low Drive Current Plastic Molded Colorless Clear Lens Provides for High Contrast

Contextual Info: SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3671 ST0R0B0 FLASH APPLICATIONS. MEDIUM POWER AMPLIFIER APPLICATIONS. Unit in ram . High DC Current Gain and Excellent hFE Linearity : hFE(l)=140~450 (VCE=2V, : h F E(2)=70(Min.) Ic =0.5A) (VC E=2V, IC=4A) . Low Saturation Voltage

9701455-S-J1

Abstract: APH184C
Contextual Info: APH184C Ka-Band HEMT Power Amplifier GaAs Telecom Products Features • RF frequency: 27 to 31 GHz • Linear gain: >10 dB • Pout > 3 0 dBm • Unconditionally stable • Balanced design provides excellent input and output VS WR • DC power: 4.5 V at 1.1 Amps

Contextual Info: TOSHIBA 1SV282 TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1SV 282 Unit in mm CATV TUNING • • • • High Capacitance Ratio : C2 v / C 2 5 V = 12.5 TYP. Low Series Resistance : rs = 0.6H (TYP.) Excellent C-V Characteristics, and Small Tracking Error.

Contextual Info: T O SH IB A 2SC4738 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC4738 Unit in mm AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS. • High Voltage and High Current : V C E O = 50V, Ic = 150mA (Max.) Excellent hpg Linearity : hpE (I q = 0.1mA) / hpg (I q = 2mA) = 0.95 (Typ.)

Contextual Info: 2SC3547A silicqn npn epitaxial planar type transistor TV TUNER, UHF OSCILLATOR APPLICATIONS. COMMON COLLECTOR • Transition Frequency is High and Dependent on C urrent Excellently. MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage

2SC2319

Contextual Info: SILICON NPN EPITAXIAL PLANAR TYPE 2SC2319 Unit in mm HIGH POWER AMPLIFIER FOR CATV APPLICATIONS. FEATURES : . Hide Band and High Gain for Class A Amplifier. . Excellent Cross Modulation Characteristics. MAXIMUM RATINGS Ta=25°C CHARACTERISTIC SYMBOL RATING

TA7630P

Abstract: bass treble volume control for 2 channel using IR
Contextual Info: TOSHIBA TA7630P D U AL. VOLUMC/BALArJCE/TOriE C A S S / T R E D L C DC CONTROL IC The TA7630P is DC controlled dual volume, balance, tone (Bass, treble) IC. As these dual channels are constructed on one chip, this IC is excellent in pair characteristic.

dallas 2505

Abstract: LT1009M LM136-2.5
Contextual Info: LT1009 2.5-V INTEGRATED REFERENCE CIRCUIT D3191, MAY 1987-REVISED AUGUST 1991 Excellent Temperature Stability LT1009C, LT1009I. . . D PACKAGE TOP VIEW Initial Tolerance . . . 0.2% Max NC[ NC[ N C[ AN O D E[ Dynamic Impedance . . . 0.6 Q Max Wide Operating Current Range

2SC4658

Contextual Info: SILICON NPN EPITAXIAL TYPE 2SC4658 HIGH CURRENT SWITCHING APPLICATIONS. DC-DC CONVERTER APPLICATIONS Unit in mm FEATURES: • Excellent hj-E linearity : hFE=100~320 at VCE=1V, IC=1A • Low Collector Saturation Voltage : vCE sat = 0 -*v (Max.) at Ic=3A, Ib =0.15A

2SC3257

Contextual Info: SILICON NPN TRIPLE DIFFUSED TYPE SW ITCH IN G REGULATOR A N D HIGH VOLTAG E SW ITCHIN G APPLICATIONS. 2SC3257 INDUSTRIAL APPLICATIONS Unit in mm 1 0 .3 M A X . HIGH SPEED D C-DC CO NVERTER APPLICATIONS. • • Excellent Switching Times : tr = 1.0/is Max. , tf=1.0/us (Max.) at Iç = 6A