EW NPN Search Results

power darlington npn transistor

Abstract: 7239 CZTA27 VEBo-10V
Contextual Info: N EW Central CZTA27 TM Semiconductor Corp. NPN HIGH VOLTAGE DARLINGTON TRANSISTOR DESCRIPTION The CENTRAL SEMICONDUCTOR CZTA27 type is a NPN Silicon Darlington Transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package,

Contextual Info: N ew P r o d u c t BCX70 SERIES SMALL SIGNAL TRANSISTORS NPN SOT-23 FEATURES NPN Silicon Epitaxial Planar Transistors for switching and AF amplifier applications. Suited for low level, low noise, low frequency applications in hybrid circuits. Low Current, Low Voltage.

1B60

Abstract: AT31011
Contextual Info: Whpïï mitiM H EW LETT PACKARD Low Current, High Performance NPN Silicon Bipolar Transistor Technical Data AT-31011 AT-31033 Features • High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Operation • 900 MHz Performance: AT-31011:0.9 dB NF, 13 dB GA

213a

Abstract: IL211A IL212A IL213A RS481A
Contextual Info: IL211A/212A/213A N EW PHOTOTRANSISTOR SMALL OUTLINE SURFACE MOUNT OPTOCOUPLER FEATURES • High Current Transfer Ratio IL211A—20% Minimum IL212A—50% Minimum IL213A—100% Minimum • Isolation Voltage, 2500 VACRMS • Electrical Specifications Similar to

rce marking

Abstract: 2dd2098r 4A SOT89 MARKING CODE
Contextual Info: 2DD2098R LOW VCE SAT NPN SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database. NEW EW PRO P RODUC D UCT T Features • • • • • • • Epitaxial Planar Die Construction Low Collector-Emitter Saturation Resistance RCE(SAT) = 75mΩ at 4A

Contextual Info: m H EW LETT* PA CK A R D Low Current, High Performance NPN Silicon Bipolar Transistor Technical Data AT-32063 Features Description • High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Operation The AT-32063 contains tw o high perform ance NPN bipolar transis­

HIGH POWER DIODE

Abstract: "Power Diode" 500V 20A 132 1506 diode D66DWT273 D66EW1 EW NPN D66DW3 NPN POWER DARLINGTON TRANSISTORS EW1 transistor
Contextual Info: HIGH VOLTAGE D 66D W T2T3 D66EW1,2,3 NPN POWER DARLINGTON VcER = 600-700 VOLTS VcEV = 800-900 VOLTS 50 AMP, 167 WATTS TRANSISTORS The D66DW/EW is a high voltage NPN high current power Darlington especially designed for applications requiring high blocking voltage capability such as: 460VAC line motor

T2140

Abstract: chip die hp transistor 0099E planar*el BF 212 transistor
Contextual Info: HEW LETT-PACKARD/ CflPNTS b lE ]> • 4447584 Whp% H EW LETT mittm PA CK A RD 402 ■HPA Chip Outline1 Features • • • • o o m ? 1! ! AT-21400 20 GHz NPN Silicon Bipolar Oscillator Transistor Fundamental Oscillation to > 20 GHz Low Phase Noise Compared to GaAs FETs

AN5296 Application note CA3018

Abstract: CA3018 an5296 Harris CA3018 AN5296 Application of the CA3018 "Application of the CA3018" AN5296 application note an5296 ca3018 CA3018A AN5296 Application of the CA3018 Integrated
Contextual Info: S E M I C O N D U C T O R CA3018, CA3018A NS EW DESIG FOR N MENDED OM November 1996 NOT REC General Purpose Transistor Arrays Features Description • Matched Monolithic General Purpose Transistors The CA3018 and CA3018A consist of four general purpose silicon NPN transistors on a common monolithic substrate.

CTC 880 transistor

Abstract: CTC 313 transistor 3 pin CTC 880 transistor GSM0102 CTC 313 transistor pin diagram T1L112 ctc 313 npn transistor
Contextual Info: T O ñ H EW LETT’ m LEM PA CK A R D 4.8 V NPN Silicon Bipolar Common Em itter Transistor Technical Data AT-38086 Features • 4.8 Volt Pulsed pulse width = 577 usee, duty cycle = 12.5% /CW Operation 85 mil Plastic Surface Mount Package Outline 86 • +28 dBm Pulsed Pout

ILD256

Abstract: Infrared emitter 25C45
Contextual Info: N EW ILD256 FEATURES • Each Channel: Guaranteed CTR Symmetry, 2:1 Maximum • Bidirectional AC Input • Industry Standard SOIC-8 Surface Mountable Package • Standard Lead Spacing, .05" • Available in Tape and Reel Option Conforms to EIA Standard 481-2

2n706 transistor

Abstract: transistor 2n706 2n2222 2N2222AA 2N706 2n2222 jan 03150 transistor transistor 2N2222 2N708 2N718
Contextual Info: N EW ENGLAND SEMICONDUCTOR SMALL SIGNAL NPN TRANSISTOR TO-18 sus VOLTS Ic (max) AMPS 2N706 15 0.05 2N708 15 - 2N718 40h 0.5 2N718AA 50 2N720A VcEO PACKAGE TO-18 T0206AA DEVICE TYPE @ It/ ^ CE min/max @ mA/V 1*FE c<je fx p (MHz) 20@10/1 0.6@10/1 6 200 30-120@10/l

transistor c 2060

Abstract: TO-59 Package 2N2877 752 transistor 2n2892 TRANSISTOR 751 TO111 package 2N1701 2N2893 3090L
Contextual Info: N EW ENGLAND SEMICONDUCTOR BIPOLAR NPN TRANSISTOR TO-8 PACKAGE NPN TO-8 J1L hp£@ Ic-/ VCE min/max @ A/V DEVICE TYPE VcEO (sus) VOLTS Ic (max) AMPS 2N1483A 40 3 20-60@.75/4 2N1484A 55 3 2N1485A 40 2N1486A 2N1701 T f T VcE(s«t) @ (V @ A/A) p * •D fr WATTS

Contextual Info: N EW ENGLAND SEMICONDUCTOR BIPOLAR NPN TRANSISTOR TO-39/TO-5 PACKAGE NPN TO-39 jLf ¡11 NPN TO-5 iff /y DEVICE TYPE V ceo sus VOLTS Ic (max) AMPS 2N1479A 40 1.5 20-60@.2/4 2N1480A 55 1.5 2N1481A 40 2N1482A 1*FE@ IC/ ^ ce (min/max @ A/V) VcE(s»t) @ (V @ A/A)

Contextual Info: W tiol H EW LETT mL'HM PA C K A R D Up to 4 GHz Linear Power Silicon Bipolar Transistor Technical Data AT-64020 Features D escription • High Output Power: 27.5 dBm Typical Px^ at 2.0 GHz 26.5 dBm Typical Px^ at 4.0 GHz The AT-64020 is a high perfor­ m ance NPN silicon bipolar

NSP2880

Abstract: NSP3996 NSP3997 NSP5427 NSP5428 NSP5429 NSP5430 NSP5660 NSP5661 NSP5664
Contextual Info: N EW ENGLAND SEMICONDUCTOR BIPOLAR POWER TRANSISTOR NPN PLANAR PACKAGE NPN TO-257 DEVICE TYPE VCEO VOLTS PEAK Ic AMPS NSP2880 70 NSP3996 V c E s a t min/max Ic @VCE A V max VOLTS Ic @ Ib A A 5.0 40-120 1.0/2.0 2.4 5.0/0.5 80 5.0 40-120 1.0/2.0 0.3 1.0/0.1

JANTX 2N6340

Abstract: JANTX 2N6341 2N6338A 2N6277A 2N6274A 2N6275 2N6276 2N6322 2N6323 2N6326
Contextual Info: N EW ENGLAND SEMICONDUCTOR BIPOLAR NPN TRANSISTOR TO-3 PACKAGE NPN TO-3 Ic/ V c E min/max @ A/V DEVICE TYPE V ceo (sus) VOLTS Ic (max) AMPS 2N6032A 90 50 10-50@50/2.6 2N6033A 120 40 2N6274A 100 2N6275 hjT E @ VcE(Mt) @ Ic^B (V @ A/A) p * r D f T WATTS (MHz)

transistor I 17-13 0773

Contextual Info: H EW L E T T I x l PA CK A R D w a rn 4.8 V NPN Common Emitter Medium Power Output Transistor Technical Data AT-31625 Features • 4.8 Volt Operation • +28.0 dBm Pout @ 900 MHz, Typ. • 70% Collector Efficiency @ 900 MHz, Typ. • 9 dB Power Gain @ 900 MHz,

crt monitor philips circuit diagram uc3842

Abstract: schematic diagram tv monitor advance 17 TDA9115 TDA9112 UC3842 philips crt horizontal ic
Contextual Info: TDA9115 LOW-COST I2C CONTROLLED DEFLECTION PROCESSOR FOR MULTISYNC MONITOR FEATURES General 2 • I C-BUS-CONTROLLED DEFLECTION PROCESSOR DEDICATED FOR LOW-END CRT MONITORS ■ SINGLE SUPPLY VOLTAGE 12V ■ VERY LOW JITTER ■ DC/DC CONVERTER CONTROLLER ■ ADVANCED EW DRIVE

Contextual Info: TDA9115 LOW-COST I2C CONTROLLED DEFLECTION PROCESSOR FOR MULTISYNC MONITOR FEATURES General 2 • I C-BUS-CONTROLLED DEFLECTION PROCESSOR DEDICATED FOR LOW-END CRT MONITORS ■ SINGLE SUPPLY VOLTAGE 12V ■ VERY LOW JITTER ■ DC/DC CONVERTER CONTROLLER ■ ADVANCED EW DRIVE

transistor 2N43

Abstract: 2N3491 2N1724A 2N1725 2N2811 2N2812 2N2813 2N2814 2N3489 2N3490
Contextual Info: N EW ENGLAND SEMICONDUCTOR BIPOLAR NPN TRANSISTOR TO-61 PACKAGE DEVICE TYPE VcEO sus VOLTS (max) AMPS NPN TO-61 2N1724A 80 5 20-90@15 2N1724A 120 5 lAm M 2N1725 80 2N2811 • Ic ^*FE@ VcE<sat) IC/ ^ C E pr D * WATTS fr (MHz) l@2/,2 50 10 30-90@2/15 ,6@2/.2

Contextual Info: Ô1331Ô7 Q00Q21b 3 37E D SEMELAB LTD SEMELAB JUL 0 6 133ßf v\i> N EW PRODUCT B U X 98CPF NPN PLANARTRANSISTOR MULTI EMITTER ION-IMPLANTED FOR FAST SWITCHING APPLICATIONS M EC H A N IC A L DATA Dimensions in mm FEATURES 50 • HIGH BREAKDOWN VOLTAGE 200 • LOW SATURATION VOLTAGE

2N2222AUB

Abstract: 2n2222aub 3-pin 2N2221AUA 2N2907AUB sot-40 2N2221AUB 2N2222AUA 2N2906AUA 2N2906AUB 2N2907AUA
Contextual Info: N EW ENGLAND SEMICONDUCTOR SMALL SIGNAL SURFACE MOUNT NPN PACKAGE 4-PIN H SOT 3-PIN H SOT DEVICE TYPE VcEO sus VOLTS Ic (max) AMPS 2N2221AUA 40 0.8 40/120@A50/10 0.4@150/15 8 250 2N2222AUA 40 0.8 100/300@150/10 0.4@150/15 8 250 2N2221AUB 40 0.8 40/120@l 50/10

CS5661

Abstract: CS5661EDW16 CS5661EDWR16 MS-013 all mosfet power amplifier 200mA PULSE WIDTH MODULATOR CONTROLLER
Contextual Info: CS5661 CS5661 DE SI GN High Performance Dual Channel Current Mode Controller with ENABLE Description current totem pole outputs ideally suited for driving power MOSFETs. VOUT2 output is switchable via the ENABLE2 pin. AR CH IF V OR E N EW The CS5661 is a high performance,