AT31011 Search Results

2SC3355 SPICE MODEL

Abstract: transistor C2003 C319B MGF1412 RF TRANSISTOR 10GHZ MRF134 rf model .lib file 2SK571 MGF1402 MRF9331 pb_hp_at41411_19921101
Contextual Info: Vendor Component Libraries RF Transistor Library May 2003 Notice The information contained in this document is subject to change without notice. Agilent Technologies makes no warranty of any kind with regard to this material, including, but not limited to, the implied warranties of merchantability and fitness

1B60

Abstract: AT31011
Contextual Info: Whpïï mitiM H EW LETT PACKARD Low Current, High Performance NPN Silicon Bipolar Transistor Technical Data AT-31011 AT-31033 Features • High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Operation • 900 MHz Performance: AT-31011:0.9 dB NF, 13 dB GA

W1A sot23 transistor

Abstract: ci LA 7804 ON w1a SOT-23 wl 1281 W02 SOT23 w1a, sot-23 ST 11791 EN 13557 yg 2025 W1A SOT23
Contextual Info: HEW LETT 1 "KM P A C K A R D 900 and 2400 MHz Amplifiers Using the AT-3 Series Low Noise Silicon Bipolar Transistors Application Note 1085 1. Introduction Discrete transistors offer low cost solutions for commercial applica­ tions in the VHF through microwave frequency range.

AT-31011

Abstract: AT32011 AT-32011 AT-32033 AT-32033-TR1G sot-23 npn marking code 162
Contextual Info: AT-32011, AT-32033 Low Current, High Performance NPN Silicon Bipolar Transistor Data Sheet Description Features Avago’s AT-32011 and AT-32033 are high performance NPN bipolar transistors that have been optimized for maximum ft at low voltage operation, making them ideal

sm 4109

Abstract: .g1 sot23 30533 41410 AT-30533 AT-31011 AT-31033 AT-32011 AT-41511 AT-32063
Contextual Info: Silicon Bipolar Transistors Selection Guide NFo and Ga are specified at a low noise bias point, while P1 dB, G1 dB, and |S21E|2 are specified at bias points which optimize these parameters. Low Noise Transistors Typical Specifications @ 25°C Case Temperature

Contextual Info: Wtipl H E W L E T T mLftMP A C K A R D Low Current, High Performance NPN Silicon Bipolar Transistor Technical Data AT-31011 AT-31033 Features Description • High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Operation • Am plifier Tested 900 MHz

TRANSISTOR NPN BA RV SOT - 89

Contextual Info: W hat PACKARD HEW LE TT* 1"KM Low Current, High Performance NPN Silicon Bipolar Transistor Technical Data AT-31011 AT-31033 Features * High Perform ance Bipolar Transistor O ptim ized for Low Current, Low Voltage Operation * A m plifier T ested 900 MHz Performance:

ku-band pll lnb

Abstract: MGA-68563 mga-62563 MMIC SOT 363 HP 5082-3081 ATF-36077 5Ghz lna transistor datasheet schottky diode 3 lead ATF-511P8 power fet 70 mil micro-X Package
Contextual Info: Semiconductor Wireless Applications and Selection Guides System Block Diagrams and Product Suggestions System Block Diagrams and Suggested Products 3 Wireless Infrastructure 3 • Basestation Radiocard 5 • Basestation Low Noise Amplifier LNA 5 • Basestation Tower Mounted Amplifier (TMA)

AT-32011

Abstract: AT-31011 AT32011 AT-32033 AT-32033-TR1G sot-23 marking code 352
Contextual Info: AT-32011, AT-32033 Low Current, High Performance NPN Silicon Bipolar Transistor Data Sheet Description Features Avago’s AT-32011 and AT-32033 are high performance NPN bipolar transistors that have been optimized for maximum ft at low voltage operation, making them ideal

AT-31011

Abstract: AT-310 AT31033 AT-31033
Contextual Info: AT-31011, AT-31033 Low Current, High Performance NPN Silicon Bipolar Transistor Data Sheet Description Avago’s AT-31011 and AT-31033 are high performance NPN bipolar transistors that have been optimized for operation at low voltages, making them ideal for use in battery powered applications in wireless markets. The AT31033 uses the 3 lead SOT‑23, while the AT-31011 places

SOT143 L03

Abstract: L0523 D2030 L03 sot143 yg 2025 microstripline FR4 AT-30511 AT-31011 W02 SOT23 ATF-10236
Contextual Info: 900 and 2400 MHz Amplifiers Using the AT-3 Series Low Noise Silicon Bipolar Transistors Application Note AN 1085 1. Introduction Discrete transistors offer low cost solutions for commercial applications in the VHF through microwave frequency range. Today’s silicon bipolar transistors offer state-ofthe-art noise figure and gain performance with low power

transistor SMD s72

Abstract: nec mys 501 MYS 99 transistor 8BB smd st MYS 99 102 kvp 81A kvp 81A DIODE Kvp 69A kvp 86a smd transistor A7p
Contextual Info: ВВЕДЕНИЕ Впервые, сделана столь масштабная попытка, разобраться с маркировкой компонентов поверхностного монтажа SMD . Конечно, книга не является панацеей, но на взгляд авторов должна существенно помочь в той

marking 24b sot-23

Abstract: 1B60 AT-310 AT-31011 AT-31033 AT-31033-TR1
Contextual Info: 4 T h at mlrJm HEW LETT P ack ard S Low C urrent, High P erform ance NPN S ilicon B ipolar T ransistor Technical Data AT-31011 AT-31033 Features Description • H igh Perform ance B ipolar T ran sistor O ptim ized for Low C urrent, Low Voltage O peration • 9 00 MHz Perform ance:

ic m 61266

Abstract: an 17830 MGA-62563 82945 A 68066 1041-64 ic 8279 36.3769 59703 AT-41486
Contextual Info: s-params.txt Spice Parameters - S-params ABA-51563 SP.txt -!ABA-51563 !s-parameters at Vd=5V. Last updated 16/01/03 AR. # GHZ S MA R 50 0.05 0.062 0.1 0.063 0.15 0.063 0.2 0.063 0.25 0.061

IAM-81008

Abstract: 5082-2830 HSMP-3895 5082-3043 ina-02170 INA-01170 30533 5082-0012 5082-2970 HSMP 2800
Contextual Info: Alphanumeric Index 1N5711 . 3-52 1N5712 . 3-52 1N5719 . 2-101 1N5767 . 2-101

sm 4109

Abstract: transistor G1 SOT-23 AT-30511 AT-42010 SOT-143 g1 AT-41486 AT-30533 AT-31011 AT-32011 AT-32033
Contextual Info: Low Noise Transistors Typical Specifications @ 25°C Case Temperature Part Number AT-30511 Frequency (GHz) VCE (V) NFo (dB) Ga (dB) P1 dB (dBm) 0.9 2.7 1.1 16.0 +7.0 G1 dB |S21E|2 @ 1.0 GHz (dBm) (dB) Package Page No. 16.5 17.9 [1] SOT-143 plastic SM 4-23

ISDB-t modulator

Abstract: ku-band pll lnb HP 5082-3081 MMIC SOT 363 power fet 70 mil micro-X Package VCO 9GHZ 10GHZ MGA-30116 mga-62563 mga 51563 MGA-30316
Contextual Info: Semiconductor Wireless Applications and Selection Guides System Block Diagrams and Product Suggestions System Block Diagrams and Suggested Products 3 Wireless Infrastructure 3 • Basestation Radiocard 5 • Basestation Low Noise Amplifier LNA 5 • Basestation Tower Mounted Amplifier (TMA)

31033P

Contextual Info: What H E W L E T T * mLliMPACKARD Low Current, High Performance NPN Silicon Bipolar Transistor Technical Data AT-31011 AT-31033 Features Description • High P erform ance B ipolar T ran sistor O ptim ized for L ow Current, L ow V oltage O peration • 900 MHz Perform ance:

AT-41435

Abstract: transistor D 2394 ATF pHEMT 5989-0925EN ATF-511P8 AT-41533 ATF-38143 AT-41486 ATF-501P8 LPCC
Contextual Info: Agilent Technologies Transistors Selection Guide Silicon Bipolar Transistors NFo and Ga are specified at a low noise bias point, while P1 dB, G1 dB, and |S21E|2 are specified at bias points which optimize these parameters. Low Noise Transistors Typical Specifications @ 25°C Case Temperature

AT-31011

Abstract: AT-310 AT-31011-BLK AT-31011-TR1 AT-31033
Contextual Info: Agilent AT-31011, AT-31033 Low Current, High Performance NPN Silicon Bipolar Transistor Data Sheet Features Description Agilent’s AT-31011 and AT-31033 are high performance NPN bipolar transistors that have been optimized for operation at low voltages, making them ideal for use

HP346A

Abstract: D2030 5091-9311E 47433 W02 SOT23 AT-30511 AT-31011 AT-32033 ATF-10236 Hewlett-Packard transistor microwave
Contextual Info: 900 and 2400 MHz Amplifiers Using the AT-3 Series Low Noise Silicon Bipolar Transistors Application Note 1085 1. Introduction Discrete transistors offer low cost solutions for commercial applications in the VHF through microwave frequency range. Today’s silicon bipolar transistors

T4148

Abstract: TIC 160 D sm 4109 TIC 160 M T-41410 TIC+160+M
Contextual Info: What H EW LETT 1 "KM PA CK A R D Silicon Bipolar Transistors Selection Guide NF0 and Ga are specified at a low noise bias point, while Pt dB, Gj dB, and IS2lEl- are specified at bias points which optimize these parameters. Low N oise Transistors Typical Specifications @ 25°C Case Temperature

Bipolar Transistors Selection Guide

Abstract: transistor G1 MSOP-3 AT-42010 AT-41511 200 mil BeO transistor
Contextual Info: Silicon Bipolar Transistors Selection Guide NFo and Ga are specified at a low noise bias point, while P1 dB, G1 dB, and |S21E|2 are specified at bias points which optimize these parameters. Low Noise Transistors Typical Specifications @ 25°C Case Temperature

5082-2830

Abstract: IAM-81008 HSMP-3895 hsms-2850 5082-0012 8205 datasheet hsms-285b HSMS-285C HSMS-2862 MSA-0870
Contextual Info: Alphanumeric Index 1N5711 . 3-52 1N5712 . 3-52 1N5719 . 2-101 1N5767 . 2-101