ET 191 1D Search Results

Contextual Info: IRFR/U234A A dvanced Power MOSEET FEATURES • Lower Input Capacitance ■ Improved Gate Charge ^ D S o n = 0 . 4 5 Q. ■ Extended Safe Operating Area ■ Lower Leakage Current : 1 0 |^A (M a x.) @ V DS = 250V ■ Lower RDS(ON) : 0.327 £1 (Typ.) CD Rugged Gate Oxide Technology

transistor N100

Abstract: N100 transistor K 192 A transistor Transistor 5331 BUZ42 N100 T0220AB V103 transistor k 3911
Contextual Info: N AMER P H I L I PS /D I SC RE T E ObE D • tb53131 Power M OS transistor OOIMSOO BU Z42 5 r - 3 7 -\i May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

OB35

Abstract: 511000BZ-60 BL-70 bzl60
Contextual Info: S IE M E N S 1 M x 1-Bit Dynamic RAM Low Power 1 M x 1-Bit Dynamic RAM HYB 511000B/BJ/BZ-60/-70/-80 HYB 511000BL/BJL/BZL-60/-70 Advanced Inform ation • • 1 048 576 words by 1-bit organization Fast access and cycle time 60 ns access time 110 ns cycle time HYB 511000B/BL-60

NJU7507

Abstract: NJU7507XD NJU7507XM f7b f1b
Contextual Info: ÇjRQl NJU7507 ^ • n ^ o h- =5> - r - t r ^ T T i m s m -z? ■< y u - 5 * H M N J U 7 5 0 7 ± . K H * 7 t 7 # ' ^ T v f f l A ' Vh* A* V 4 M V T , t - f ^ w i i E W i S i s L ü f l > A * V K A* W * * . Sl«@ï&. 5 n ^ | g i [ l l K . $ i J ^ i l B ] f ê . A " 9-t>'J-k';HIlfê.DCgEB&lllfê

Contextual Info: m o st w id e ly used ^ e d • aobaaii 000123? Frequency Mixers tti *sc c Models T a 1/ LEV EL 7 +7dBm LO, up to +1dBm RF T_74-09- 0^ / TAK-6R SCIENTIFIC/ MINI-CIRCUITS computer-automated performance data typical production unit / for data of other models consult factory

VHF RTA-44D

Abstract: RTA 44D TPA-81A 066-01127-1602 IVA-81A RTA-44D 064-50000-0202 064-50000-2051 RMA-55B Processor 066-50000-2120 TPA-81A
Contextual Info: VHF COMM VHF COMM VHF COMM VHF COMM VHF COMM VHF COMM VHF COMM VHF COMM VHF COMM VHF COMM Mode S Mode S Mode S TCAS TCAS TCAS TCAS TCAS TCAS TCAS TCAS TCAS TCAS TCAS TCAS TCAS TCAS TCAS TCAS TCAS TCAS TCAS TCAS TCAS TCAS TCAS TCAS TCAS TCAS TCAS TCAS TCAS

FLK102XV

Abstract: FLK102
Contextual Info: FLK102XV Füjrrsu GaAs FET and HEMT Chips FEATURES • • • • High O utput Power: P-|<jB = 30.0dBm Typ. High Gain: G -j^B = 6.5dB(Typ.) High PAE: r iadd = 31% (Typ.) Proven Reliability I Drain DESCRIPTION Drain É The FLK102XV chip is a pow er GaAs FET that is designed for

514100A

Contextual Info: SIEMENS 4M X 9-Bit Dynamic RAM Module HYM 94500S/-60/-70/-80 HYM 94500L/-60/-70/-80 Advanced Information • 4 194 304 words by 9-bit organization • Fast access and cycle time 60 ns access time 110 ns cycle time -60 version 70 ns access time 130 ns cycle time (-70 version)

information applikation

Abstract: "Mikroelektronik" Heft mikroelektronik Heft CDB4151 mikroelektronik Heft 12 MH8475 MH7442 Mikroelektronik Information Applikation information applikation mikroelektronik CDB4153
Contextual Info: ' 1 o lE h f c p o n ih Information Applikation s o c h a lH ü n o n il- c Information Applikation HEFT 25 I M P O R T - I S T E IL 1 Ivob Halbleiterwerk frankfurt/ader | b e trie b im m b kom binat m ikroelektronik ] KAMMER DER TECH N IK I Bezirksvorstand Frankfurt/O.

74LV174

Abstract: 74LV174D 74LV174DB 74LV174N 74LV174PW low voltage
Contextual Info: Philips Semiconductors 1 Preliminary Specification Hex D-type flip-flop with reset; positive-edge trigger FEATURES • Wide operating voltage: 1.0 to 5.5 V • Optimized for Low Voltage applications: 1.0 to 3.6 V • Accepts TTL input levels between Vcc = 2.7 V and

nrzi

Abstract: autoneg seed 1000Base-T DP83861
Contextual Info: DP83861 DP83861 EN Gig PHYTER 10/100/1000 Ethernet Physical Layer Literature Number: SNLS069D Oct 2009 DP83861VQM-3 EN Gig PHYTER 10/100/1000 Ethernet Physical Layer General Description Features bs ol et e The DP83861 is a full featured Physical Layer transceiver • 100BASE-TX and 1000BASE-T compliant

CA927

Abstract: A191 DIN 41652 part 1 DIN 41652 connector
Contextual Info: lTTlndustrles AUTOMOTIVE DEFENCE & ELECTRONICs F L U I DT E C H N O L O G Y ITT Cannon JaysCbso Vnbbe Eetate Basingsloke HantsRG224BW TeL +4419;1ffi311* Fax +44 O 1ffi311?s4 October28, 1996 PSPElectronicsLtd, Unit 228, AHoe},ManufacturingEstate, Mount Pleasant,

6sd7

Abstract: rgn 1064 rgn 4004 RGN2004 EDD11 1e7k 12sf7 117L7 RGN 156 ECC40
Contextual Info: 01 A 1 A3 1 A4P 1A4T 1A5G 1 A6 Type RE 074 KB1 KF3 KF 3 D L11 KK 2 ähnlich 5 1.4 2 2 1.4 2 Vf 0.25 0.15 0.06 0.06 0,05 0.06 B B B B B B H e iz a r t N D H" H" EP M0+ O :tT V erm . 135 120'*) 180 180 90 180 Ua - 67,5 67.5 90 67,5 ü fc 9 - -3 3 -4,5 -3 Ug,

21CEP4

Abstract: J171 rs tube NO.5 Scans-0017363
Contextual Info: 21CEP4 KINESCOPE TENTATIVE RCA-2ICEP4 rectangular, age a very short, picture eIectrostatic-focus type. an is glass It slightly screen curved tube and has a s p h e r i c a I aluminized directly of the ing yoke having high also permits magnetic-defIection wide

hct74

Abstract: 7Z93116 74HC 74HCT 74HC-HCT74
Contextual Info: 74H C /H CT74 flip-flops D U A L D -T Y P E F LIP -F L O P W IT H S ET A N D R ES E T; P O S IT IV E -E D G E T R IG G E R FEATURES • • TYPICAL Output capability: standard I qq category: flip-flops SYMBOL The set and reset are asynchronous active LOW inputs and operate

grundig rc 7

Abstract: MAA 502 grundig rc 7-1 Tesla katalog tesla maa 436 OSKJ til 702 datasheet eyeq2 ic 8279 MAA 325 TESLA
Contextual Info: spine back 8.06 in. Norsk TI-89 / TI-92 Plus Texas Instruments U.S.A. 7800 Banner Dr. Dallas, TX 75251 Texas Instruments Holland B.V. Rutherfordweg 102 3542 CG Utrecht - The Netherlands Printed by: ti-cares@ti.com 1999 Texas Instruments w w w. t i . c o m / c a l c

Contextual Info: HY524800 Series •HYUNDAI S12KX 8-bit CMOS DRAM DESCRIPTION The HY524800 is the new generation and fast dynamic RAM organized 524,288 x 8-bits. The HY524800 utilizes Hyundai’s CM OS silicon gate process technology as well as advanced circuit techniques to provide wide operating

12 VOLT 50 AMP smps schematics

Abstract: PE-51718 35 VOLT 3 AMP smps schematics PE-65300 layout 48 VOLT 150 AMP smps PE-64973 flyback transformer THT pin connections offline switcher P0584 transformer 12 volt 150 amp smps
Contextual Info: TABLE of CONTENTS Gate Drive Transformers DC/DC Surface Mount Gate Drives for SELV Operation . . . . . . . . . . . . . . . . . . . . .2-3 UL/C-UL Recognized Through Hole Gate Drives . . . . . . . . . . . . . . . . . . . . . . . . . . . .4 500 KHz Gate Drives . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5

equivalent diode for R2C

Abstract: IZH12
Contextual Info: H IG H - P E R F O R M A N C E ID T54/74FCT861-64B C M O S BUS TR AN S CEIV E RS FEATURES: DESCRIPTION: • 35% faster th a n A M D ’s A m 2 9 8 6 1 -6 4 series The ID T54/74FC T800 Series is built using advanced CEMOS , a dual metal C M O S technology.

Contextual Info: 1234563789A7B79C422B Pb Free 29A !"1#FF$%  8369A 12234567 B&'2C 12234567 1234567 89AB9CD5E6FE 44 서식번호 : SSC- QP- 7- 07- 25 Rev.0.0 1234563789A7B79C422B (5A2A&5) F4 *2&CA E4 +,&-B25'9.'B'5C9A/& 74 -2C$9-509C92C&&

BS228

Abstract: 000D BS2216 PQ208 PT280
Contextual Info: BS228 / BS2216 Utopia Level 2 Slave Bridges Device Datasheet Version 1.0 - July 2001 Utopia Level 2 Slave/Slave Bridge Datasheet 1 BS228 / BS2216 Utopia Level 2 Slave Bridges Device Datasheet Version 1.0 - July 2001 CONTENTS 1 INTRODUCTION . 3

BM*228

Abstract: BM2216 000D PQ208 PT280
Contextual Info: BM2216 / BM228 Utopia Level 2 Master Bridge Device Datasheet Version 1.0 - July 2001 Utopia Level 2 Master/Master Bridge Datasheet 1 BM2216 / BM228 Utopia Level 2 Master Bridge Device Datasheet Version 1.0 - July 2001 CONTENTS 1 INTRODUCTION . 3

68000 thomson

Contextual Info: O THOMSON COMPOSANTS MILITAIRES ET SPATIAUX TS 68302 INTEGRATED MULTIPROTOCOL PROCESSOR IMP DESCRIPTION The IMP is a very large-scale integration (VLSI) device incorpora­ ting the main building blocks needed for the design of a wide va­ riety of controllers. The device is especially suitable to applica­

BM3216

Abstract: 000D PQ208 PT280
Contextual Info: BM3216 Utopia Level 3 to Level 2 Master Bridge Device Datasheet Version 1.0 - July 2001 Utopia Level 3 to Level 2 Master/Master Bridge Datasheet 1 BM3216 Utopia Level 3 to Level 2 Master Bridge Device Datasheet Version 1.0 - July 2001 CONTENTS 1 INTRODUCTION . 3