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    ESM 850 Search Results

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    ESM 850 Price and Stock

    PennEngineering (PEM)

    PennEngineering (PEM) AESM8-5.0

    Designed for high load applications. Available with rib key or full hex features for high torque applications.
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    ESM 850 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    ESM Panasonic

    Contextual Info: Aluminum Electrolytic Capacitors Axial Lead Type ES/ESM Series ES/ESM Series Features • Low leakage current ESM Series ■ Low impedance ■ Long life 5000 hours at +85°C Specifications Item Performance Characteristics Operating Temperature Range -4 0 to +85’C


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    4700nf120hz002cv10khz+1esm panasonic PDF

    S4E400

    Abstract: S4E315 350-AR06 400-AP12 br06 73811-2-3634 M4Q045-EF01 ga09 ESM 740 ay09
    Contextual Info: General information Wall rings 372 Connection lines 374 Accessories for Q-motors and energy-saving motors ESM 374 361 Contacts Technology Accessories EC-SYSTEMS ESM Q-motor EC axial S series EC axial fans AC axial A series Terminal boxes, capacitors, speed setting devices, motor protection switches, star-delta switches, repair switches 381


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    64558-2ectrict0-4-8410/i1t0-4-8410/et0-2-8900/i1/svb-sw+11t0-2-8900/ea/svb-sws4e400s4e315350-ar06400-ap12br0673811-2-3634m4q045-ef01ga09esm 740ay09 PDF

    Contextual Info: ESM T M52D128324A 2E Mobile SDRAM 1M x 32Bit x 4Banks Mobile Synchronous DRAM GENERAL DESCRIPTION FEATURES The M52D128324A is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 32 bits, fabricated with high performance CMOS


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    m52d128324a32bit PDF

    Contextual Info: ESM T M53D128324A 2E Mobile DDR SDRAM 1M x 32 Bit x 4 Banks Mobile DDR SDRAM Features           JEDEC Standard Internal pipelined double-data-rate architecture, two data access per clock cycle Bi-directional data strobe (DQS)


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    m53d128324a PDF

    Contextual Info: ESM T M53D128168A 2E Operation Temperature Condition -40 C~85 C Mobile DDR SDRAM 2M x16 Bit x 4 Banks Mobile DDR SDRAM Features All inputs except data & DM are sampled at the rising edge of the system clock(CLK) DQS is edge-aligned with data for READ; center-aligned


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    m53d128168a PDF

    Contextual Info: NICHIA STS-DA1-1781D <Cat.No.120522> N I CH I A CORPORATI ON SPECI FI CATI ON S FOR FULL COLOR LED N ESM 0 2 6 CT Pb-free Reflow Soldering Application RoHS Compliant RGB Sorted RGB die lit separately. NICHIA STS-DA1-1781D <Cat.No.120522> SPECIFICATIONS (1) Absolute Maximum Ratings


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    sts-da1-1781d PDF

    BUS11A PHILIPS SEMICONDUCTOR

    Contextual Info: N AUER PHILIPS/DISCRETE 25E D • bb53,m Q01b22Q b ■ T~32-0t Power Devices HIGH SPEED, HIGH VOLTAGE DARLINGTONS in order of current rating PACKAGE O U T LIN E *C(DC)(U V CBO V CEO SOT-93 6A 800V 900V BUV90 SOT-93 12A BUV90F SOT-199 ESM3045AV ESM 3045DV


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    q01b22q32-0tot-93buv90+6buv90fot-199esm3045av3045dvesm4045avbus11a philips semiconductor PDF

    Contextual Info: ESM T M53D128168A 2E Mobile DDR SDRAM 2M x16 Bit x 4 Banks Mobile DDR SDRAM Features All inputs except data & DM are sampled at the rising edge of the system clock(CLK) DQS is edge-aligned with data for READ; center-aligned with data for WRITE Data mask (DM) for write masking only


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    m53d128168a PDF

    transistor ESM 3004

    Abstract: ESM3004 ESM 3004 2060T transistor ESM 2060T transistor WLM transistor ESM 30 transistor ESM 3001 ESM 3005 npn 1000V 100a
    Contextual Info: SUPERSWITCH transistor T 0 -2 2 0 AB selector guide guide de sélection transistors TO-220 AB SUPERSWITCH \v c E O s u s \ VCEX 90V 120V 200V 400V 180V 240V 400V 850V Casa 'C(sat) 12 A 8 A 6 A BUV 26 BUV 27 BUV 28 2,5 A BUV 46 1 BUV 36 A w SUPERSWITCH power transistor TO-83 selector guide


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    o-22000v-600v1000t2060t+10cb-70transistor esm 3004esm3004esm 3004transistor esm 2060ttransistor wlmtransistor esm 30transistor esm 3001esm 3005npn 1000v 100a PDF

    transistor buv 90

    Abstract: transistor ESM 3004 transistor ESM 16 transistor Buv 48 transistor ESM 30 transistor ESM 3000 transistor ESM transistor ESM 3001 transistor ESM 3006 transistor buv 46 C
    Contextual Info: SUPERSWITCH transistor T 0 -2 2 0 AB selector guide guide de sélection transistors TO-220 AB SUPERSWITCH \v c E O s u s \ VCEX 90V 120V 200V 400V 180V 240V 400V 850V Casa 'C(sat) 12 A 8 A 6 A BUV 26 BUV 27 BUV 28 2,5 A BUV 46 1 BUV 36 A w SUPERSWITCH power transistor TO-83 selector guide


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    o-22000v-600v1000t2060t+12cb-244cb-285transistor buv 90transistor esm 3004transistor esm 16transistor buv 48transistor esm 30transistor esm 3000transistor esmtransistor esm 3001transistor esm 3006transistor buv 46 c PDF

    pnp transistor 1000v

    Abstract: transistor buv 90 bux diode darlington NPN 1000V transistor pnp transistor 600V transistor ESM 30 buv PNP transistor BU 104 NPN Transistor VCEO 1000V transistor BUX 48
    Contextual Info: SUPERSWITCH transistor TOP-3 selector guide guide de sélection transistors TOP-3 SUPERSWITCH \ V C E O sus \ v CEX THOMSON-CSF 60V 80V 90V 125 V 150V 400V 450V 120V 160V 180V 250V 200V 850V 1000V Case fC (sat) 40 A BU W 4ff 30 A BU W 49 20 A BUX 69 IS A


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    buv48buv47cb-244cb-285+10pnp transistor 1000vtransistor buv 90bux diodedarlington npn 1000v transistorpnp transistor 600vtransistor esm 30buv pnptransistor bu 104npn transistor vceo 1000vtransistor bux 48 PDF

    n00a

    Abstract: TL 413 ESM10040 buv48i ESM 10045 BUV47I diode ESM 48 10045 Insulating ISOTOP
    Contextual Info: y SUPERSWITCH THOMSON-CSF TOP-3 case insulated Insulating voltage : 2,0 kVrnns B o ît ie r TOP-3 isolé Ten sion d ' i s o l e m e n t : 2,0 k V e ff Type BU V 48 I BU V 47 I v CEO *ust (V VCEV (V) 400 400 850 850 t f max n 00°C) (ns) 10 5 400 400 ISOTOP case insulated


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    cb-413n00atl 413esm10040+7buv48iesm 10045buv47idiode esm 4810045insulatingisotop PDF

    TRANSISTOR BDX

    Abstract: TRANSISTOR BDX 285 pnp transistor 1000v TRANSISTOR BDX 53 transistor BDX 65 transistor BDX 80 bux diode darlington NPN 1000V isotop DARLINGTON ESM 749 transistor BU 184
    Contextual Info: SUPERSWITCH transistor TOP-3 selector guide guide de sélection transistors TOP-3 SUPERSWITCH \V C E O sus \ v CEX THOMSON-CSF 60V 80V 90V 125V 150V 400V 450V 120V 160V 180V 250V 200V 850V 1000V Case fC (sat) 40 A BUW 4ff 30 A BUW 49 20 A BUX 69 IS A J/T


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    buv48buv47o-22ciabcb-117+13buv37cb-244cb-285transistor bdxtransistor bdx 285pnp transistor 1000vtransistor bdx 53transistor bdx 65transistor bdx 80bux diodedarlington npn 1000v isotopdarlington esm 749transistor bu 184 PDF

    ESM 310

    Abstract: ESM 2200 ESM3004 ESM 3004 ESM 738 asi 4014 esm 850 IC 4011 esm3001 esm4016
    Contextual Info: SCS-THOMSON GENERAL PURPOSE & INDUSTRIAL KfflDÊ @i[L[iÊra RÔDÊi POWER BIPOLAR MU 86 CB-478 CB-480 METAL SUPERSWITCH HIGH POWER TRANSISTORS Type NPN v CEO VcEV 'c m ptot v CE sat @ >c •b ‘d + ‘r ‘ r* •si* max max (m s ) (ms) (V) (V) (A) (W)


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    cb-480cb-478esm 310esm 2200+8esm3004esm 3004esm 738asi 4014esm 850ic 4011esm3001esm4016 PDF

    transistor ESM 3004

    Abstract: CB183 transistor ESM 30 esm3004 ESM 3004 ESM 3005 2N2815 2N1724A ESM 4017 ESM2060T
    Contextual Info: o metal power transistors transistors de puissance métalliques THOMSON-CSF Type v CEO •c Ptot cont <V A) VcE(sat) / «C / *B max max <A) (V) (A) 1,5 0,7 (3) 0,7 (3) 1,5 1,5 1,5 1,5 1,5 1,5 1,5 100 100 100 60 140 30 50 40 30 23 10 10 10 12 28 5* 5* 4*


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    1000t2060tcb-70transistor esm 3004+9cb183transistor esm 30esm3004esm 3004esm 30052n28152n1724aesm 4017esm2060t PDF

    BUF 460 AV

    Abstract: IC 2030 schematic diagram 3030DV BUV 460 C esm 200 buf 450 diode diode ESM 15 diagram DARLINGTON buv 40 a 6045AV
    Contextual Info: SGS-THOMSON GENERAL PURPOSE & INDUSTRIAL ra0 S ®(IlLll(E?(si®R!IOlgg POWER MODULES BIPOLAR IN ISOTOP ISOTOP; Standard version ISOTOP : Faston version Darlingtons Bipolar transistors Bipolar transistors Darlingtons Internal schematic diagrams J J BO- O C


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    buf 460 avic 2030 schematic diagram3030dvbuv 460 c+6esm 200buf 450 diodediode esm 15diagram darlingtonbuv 40 a6045av PDF

    BF272

    Abstract: ampli lineaire AMPLI LINEAIRE FM Transistor BFR 96 if amplifier BF167 cb amplifier BF509 L 146 CB BF199
    Contextual Info: 4 0. 900 MHz class A linear for CATV/MATV applications f\ TYPE POLARITY classe A linéaire pour amplificateurs d'antenne PACKAGE @ V BR CEO min. (V) (M Hz) le Im A) C l2e C22b* (pF) l\IF @ (dB) BFX 89 BFY90 BFR 99 BFR 38 N N P P TO-72 TO-72 TO-72 TO-72


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    bf272bf1300cb-146ampli lineaire+8ampli lineaire fmtransistor bfr 96if amplifierbf167cb amplifierbf509l 146 cbbf199 PDF

    bc 540

    Abstract: BCW90 bcw 94 b ESM636 BCW91B ESM 639 BCW 90 BCW91 ESM638 Esm635
    Contextual Info: o general purpose transistors — plastic case transistors usage général — boîtier plastique M axim um ratings Type NPN PNP THOMSON-CSF Characteristics at 25°C Ptot VCEO mW (V) BC 559 BC 559 B BC 559 C 500 25 125 200 420 BC 560 BC 560 B BC 560 C 500


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    bcw90cb-76bc 540bcw 94 b+7esm636bcw91besm 639bcw 90bcw91esm638esm635 PDF

    TRANSISTOR BC 213

    Abstract: TRANSISTOR BC 181 bf 239 BF 212 transistor transistor bf 184 BF 184 NPN transistor TRANSISTOR BC 212 TRANSISTOR BC 174 transistor BC 338 BF 184 transistor
    Contextual Info: general purpose transistor selector guide — plastic case guide de sélection transistors usage général — boîtier plastique tho m so n -c s f Case ^ ^ ^ 1 0 Polarity 92 CB-1% NPN PNP NPN PNP NPN 0,8.1 A 0,4.0,6 A « 0 ,2 A PNP v CEO 20 V B Ç 2 3 8 .


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    bcw94cb-76transistor bc 213transistor bc 181+8bf 239bf 212 transistortransistor bf 184bf 184 npn transistortransistor bc 212transistor bc 174transistor bc 338bf 184 transistor PDF

    ESM 310

    Abstract: BYT 1000 esm diodes diodes byt DO-220 PLQ08 1n3880r Scans-00110661 765400 BYT 13-800
    Contextual Info: r Z J SGS'THOMSON GENERAL PURPOSE & INDUSTRIAL A 7f RfüDtgœillLKg'ü’œiiiflOfgi RECTIFIER DIODES FAST RECOVERY RECTIFIER DIODES < 100 A Type •o VRRM •f s m 10 ms VF A (V) (A) Package max (ns) Vr lF = 0.5 A lR = 1 A (ns) 50 (1) 35 F 126 If •r 'V r r m


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    plq08esm 310byt 1000esm diodes+6diodes bytdo-2201n3880rscans-00110661765400byt 13-800 PDF

    Axialventilatoren

    Abstract: w1g250hh
    Contextual Info: 37778-7-8811 • KO-07/07-3,25’ Printed in Germany ebm-papst ebm-papst ebm-papst Mulfingen GmbH & Co. KG St.Georgen GmbH & Co. KG Landshut GmbH Bachmühle 2 Hermann-Papst-Straße 1 Hofmark-Aich-Straße 25 D-74673 Mulfingen D-78112 St.Georgen D-84030 Landshut


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    ko-07/07-3d-74673d-78112d-84030+2axialventilatorenw1g250hh PDF

    TRANSISTOR BDX

    Abstract: transistor BDX 62 A transistor BU 184 bdx 330 BU800 transistor BDX 65 transistor BU 109 darlington NPN 1000V 8a transistor ESM855 h21e BU 208
    Contextual Info: SUPERSWITCH high power transistor M U 86 selector guide guide de sélection transistors grande puissance MU 86 SUPERSWITCH power transistor and darlington for TV applications selector guide guide de sélection transistors de puissance et darlingtons pour applications TV


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    130civ109dpo-220104dp+14bux37cb-159buv54cb-19transistor bdxtransistor bdx 62 atransistor bu 184bdx 330bu800transistor bdx 65transistor bu 109darlington npn 1000v 8a transistoresm855h21e bu 208 PDF

    transistor BC 310

    Abstract: transistor bc 487 transistor BC 321 TRANSISTOR BC 416 b pnp bc 337-25 transistor TRANSISTOR BC 415 transistor bc 318 transistor BC 337-25 TRANSISTOR BC 413 bc 337-40 transistor
    Contextual Info: general purpose transistor selector guide — plastic case guide de sélection transistors usage général — boîtier plastique th o m s o n -c s f Case ^ ^ ^ 1 0 Polarity 92 CB-1% NPN PNP NPN PNP NPN 0,8.1 A 0,4.0,6 A « 0 ,2 A PNP v CEO 20 V B Ç 2 3 8 .


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    bcw94cb-76bc317ptransistor bc 310+9transistor bc 487transistor bc 321transistor bc 416 b pnpbc 337-25 transistortransistor bc 415transistor bc 318transistor bc 337-25transistor bc 413bc 337-40 transistor PDF

    Axial fans

    Contextual Info: 37779-7-8811 • KO-08/07-10,8’ Printed in Germany Axial fans version 07 Axial fans ebm-papst ebm-papst ebm-papst Mulfingen GmbH & Co. KG St.Georgen GmbH & Co. KG Landshut GmbH Bachmühle 2 Hermann-Papst-Straße 1 Hofmark-Aich-Straße 25 D-74673 Mulfingen


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    ko-08/07-10d-74673d-78112d-84030+1axial fans PDF