J300 Siliconix
Abstract: 10112N 2n Siliconix FET U257 dual FET 2N4393 2N4416 2N5912 J300 U232 Siliconix Application Note
Contextual Info: z> B Siliconix g APPLICATION NO TE FETs for Video Amplifiers INTRODUCTION For this analysis the gate source leakage resistance has been ignored due to its high value. Redrawing the input equivalent circuit as a simple parallel RC combination results in The field-effect transistor lends itself well to video amplifier
|
OCR Scan
|
j300 siliconix10112n2n siliconix fetu257 dual fet+62n43932n44162n5912j300u232siliconix application note
|
PDF
|
DA 2688
Abstract: transistor DA 2688 LT 5265 transistor mj 3055 c2688 C-2688 equivalent transistor TIP3055 c2688 L c2688 transistor tRANSISTOR c2688
Contextual Info: TEXAS r ÌNSTR 8961726 TEXAS IN STR 62C OPTO 37004 TIP3055 N-P-N SILICON POWER TRANSISTOR T - 3 3 DECEMBER 1970 - REVISED OCTOBER 1884 Designed for Complementary Use with TIP2955 9 0 W at 2 5 ° C C ase T emperature 15 A Continuous Collector Current Plastic-Case Version of 2N 3055
|
OCR Scan
|
tip3055tip2955t0-218aa7s265+10da 2688transistor da 2688lt 5265transistor mj 3055c2688c-2688equivalent transistor tip3055c2688 lc2688 transistortransistor c2688
|
PDF
|
2sc1970
Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC1970 NPN EPITAXIAL PLANAR TYPE DESCRIPTION OUTLINE DRAWING 2 SC 1970 is a silicon NPN epitaxial planar type transistor designed for R F power amplifiers on V H F band mobile radio applications. 9.1 ± 0.7 FEATURES Dimensions in mm
|
OCR Scan
|
2sc1970 |
PDF
|
equivalent transistor TIP3055
Abstract: 2N3055 transistor equivalent C2688 TIP3055 NPN power transistor TIP3055 equivalent transistor 2n3055 tip3055 equivalent C-2688 2N3055 equivalent transistor c2688 transistor
Contextual Info: t e x a s T n s T ìT ^ ìo p I r -8961726 TEXAS IN STR 62C OPTO 37004 TIP3055 N-P-N SILICON POWER TRANSISTOR r - 1 ? - / 3 DEC EM BER 1970 - REVISED OCTOBER 1884 • Designed for Complementary U se with TIP2955 • 90 W at 25° C C ase Temperature
|
OCR Scan
|
tip3055tip29552n3055t0-218aa+127s265ttil72ti37d0c1equivalent transistor tip30552n3055 transistor equivalentc2688tip3055 npn power transistorequivalent transistor 2n3055tip3055 equivalentc-26882n3055 equivalent transistorc2688 transistor
|
PDF
|
Design Note 127
Abstract: dbx 202C VCA DBX 2180 dbx 2150 DBX 202 DBX 2181 dbx vca dbx 202c dbx 2001 VCA DBX2150
Contextual Info: 1 THAT Corporation Design Note 127 Upgrading Modular VCAs The appearance of the first modular VCAs in the 1970s dramatically accelerated the field of fader automation. While the performance of those early VCAs is rather lacking by today’s standards, many of the early SSL and Quad-8 consoles built during that era are still in
|
Original
|
1970sdesign note 127dbx 202c vcadbx 2180+7dbx 2150dbx 202dbx 2181dbx vcadbx 202cdbx 2001 vcadbx2150
|
PDF
|
19Sg
Abstract: WN smd transistor 2N388 1027CB 2N388 JAN equivalent smd transistor marking da SMD TRANSISTOR MARKING km transistor smd marking mx SMD TRANSISTOR MARKING ME 2d SMD NPn TRANSISTOR
Contextual Info: MIL-S-19500/65B 19 March 1970 SUPERSEDING MIL.S.19500/65A 19 A@ MILfTARY SEMICONDUCTOR 1963 SPECIFICATION DEVICE, TRANSISTOR, NPN, GERMANIUM, SWITCHING TYPE 2N3BS This specification partnmnk is and A~mcics mundalcvy for uc of the Department by all Deof Defense.
|
Original
|
mil-s-19500/65b19500/65a2n388uil-s-19500165b+10514ad19sgwn smd transistor1027cb2n388 jan equivalentsmd transistor marking dasmd transistor marking kmtransistor smd marking mxsmd transistor marking me2d smd npn transistor
|
PDF
|
NTC 220-11
Abstract: PHILIPS TRANSMITTING BIPOLAR Philips Semiconductors Small-signal Transistors Selection guide
Contextual Info: Philips Semiconductors RF transmitting transistor and power amplifier fundamentals 1 Transmitting transistor design transistors are suitable, see panel, and Philips Semiconductors’ portfolio includes both types. Their relative merits are summarized later in this section. First,
|
Original
|
transisto25-735ntc 220-11philips transmitting bipolarphilips semiconductors small-signal transistors selection guide |
PDF
|
tip 31
Abstract: c2688 L transistor DA 2688 DA 2688 tip 120 TRANSISTOR equivalent
Contextual Info: "TEXAS INSTR -COPTÒF ^2 »E 0Q3b?ti0 8 9 0 1 7 2 6 TEXAS INSTR <OPTO 62C 3 ó 7 60 TIP 31, TIP31 A , TIP 31B, TIP 31 C , T1P31D, TIP 31 E, TIP31F N-P-N SILICON POWER TRAN SISTO RS D ECEM BER 1970 - R EV ISED O CTOBER 1984 40 W at 2 5 ° C C ase Temperature
|
OCR Scan
|
tip31t1p31dtip31ft0-22dab+5tip 31c2688 ltransistor da 2688da 2688tip 120 transistor equivalent
|
PDF
|
smd transistor 7D
Abstract: Horizontal Transistor P-DSO-20 mk 22 smd
Contextual Info: A Multichannel Power Switch – An Important Step in the Miniaturization of Electronic Systems Over recent years, the planned application of IC technologies has opened up new opportunities for the development and manufacture of power semiconductors; for example,
|
Original
|
1970sp-dso-28smd transistor 7dhorizontal transistor+2p-dso-20mk 22 smd
|
PDF
|
erg inc
Abstract: 12 volt dc to 220 volt ac inverter dc ac inverter 1000 watt triac inverter inverter source code dc to ac inverter single phase inverters circuit diagram dc to ac inverter circuit diagram 12 volt dc to 220 volt ac inverter 1000 watts 220 volt ac to 12 volt dc inverter
Contextual Info: Smart Forcetm Inverter Application Note to ac inverter and the electroluminescent lamp EL lamp it was designed to power. They function together as a compensating integrated system. INTRODUCTION Endicott Research Group, Inc. has been designing and manufacturing “Smart Force” dc to
|
Original
|
erg inc12 volt dc to 220 volt ac inverterdc ac inverter 1000 watttriac inverter+6inverter source codedc to ac invertersingle phase inverters circuit diagramdc to ac inverter circuit diagram12 volt dc to 220 volt ac inverter 1000 watts220 volt ac to 12 volt dc inverter
|
PDF
|
army sc-c-179495
Abstract: 2N426 2N428 germanium transistor ac 127 STT 433
Contextual Info: MIL-S-19500/44D •lEJter sh 1970 SUPERSEDING MIL-S-19500/44C 9 April 1962 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, GERMANIUM, LOW-POWER TYPE 2N428 This specification is mandatory fo r use by all De partments and Agencies o f the Department o f Defense.
|
OCR Scan
|
mil-s-19500/44dmil-s-19500/44c2n428000-hour+5mil-s-19500army sc-c-1794952n426germanium transistor ac 127stt 433
|
PDF
|
HP8970
Abstract: transistor s parameters noise TRANSISTOR noise figure measurements Cas23
Contextual Info: IEEE BCTM 12.1 Modelling the Correlation in the High-Frequency Noise of Hetero-junction Bipolar Transistors using Charge-Partitioning J. C. J. Paasschens, R. J. Havens, and L. F. Tiemeijer Philips Research Laboratories, Prof. Holstlaan 4, 5656 AA Eindhoven, The Netherlands
|
OCR Scan
|
ed-31ed-34hp8970transistor s parameters noise+2transistor noise figure measurementscas23
|
PDF
|
Widlar
Abstract: lm12 op amp 150W TRANSISTOR AUDIO AMPLIFIER 800W TRANSISTOR npn 800w inverter AN-446B frederiksen Three-Five Widlar AN-21 LM12
Contextual Info: National Semiconductor Application Note 446B April 1998 Robert J. Widlar Apartado Postal 541 steady-state conditions increases guaranteed power ratings by several times when compared to older techniques. At the same time, it dramatically lowers the peak junction temperature with worst-case fault conditions.
|
Original
|
widlarlm12 op amp150w transistor audio amplifier800w transistor npn+6800w inverteran-446bfrederiksenthree-fivewidlar an-21lm12
|
PDF
|
600W TRANSISTOR AUDIO AMPLIFIER
Abstract: Widlar h9301 pnp 150w darlington transistor to3 package 800W TRANSISTOR npn 800w inverter AN-446B LM12 446B C1995
Contextual Info: National Semiconductor Application Note 446B 446B October 1987 Robert J Widlar Apartado Postal 541 Puerto Vallarta Jalisco Mexico Mineo Yamatake National Semiconductor Corp Santa Clara California Abstract The standard junction-isolated power process has been modified by the addition of polycrystalline-film resistors to solve the topological problems encountered in
|
Original
|
01-percent600w transistor audio amplifierwidlarh9301+7pnp 150w darlington transistor to3 package800w transistor npn800w inverteran-446blm12446bc1995
|
PDF
|
|
|
NE800296
Abstract: diode deg avalanche zo 150 63 NE72089 ne8002 SK3448 universal jfet biasing curve graph gunn diode ghz s-parameter NE800196 impatt diode NE800495-4
Contextual Info: California Eastern Laboratories AN82901-1 APPLICATION NOTE Application of Microwave GaAs FETs INTRODUCTION The history of converting microwave communications, as well as other communications technologies, to solid state electronics is a long one. Early advances were first made in
|
Original
|
an82901-124-hourne800296diode deg avalanche zo 150 63+8ne72089ne8002sk3448universal jfet biasing curve graphgunn diode ghz s-parameterne800196impatt diodene800495-4
|
PDF
|
NE800296
Abstract: NE800196 NE24406 diode deg avalanche zo 150 63 SK3448 ne8002 NE868199 shockley diode NE800495-4 shockley diode application
Contextual Info: California Eastern Laboratories AN82901-1 APPLICATION NOTE Application of Microwave GaAs FETs 9/82 INTRODUCTION The history of converting microwave communications, as well as other communications technologies, to solid state electronics is a long one. Early advances were first made in
|
Original
|
an82901-1ne800296ne800196ne24406+7diode deg avalanche zo 150 63sk3448ne8002ne868199shockley diodene800495-4shockley diode application
|
PDF
|
k3hb-vlc
Abstract: K3HB-V K3HB-XVD K3HB-S sewing waterproof wireless water level sensor plc omron
Contextual Info: Digital Indicators K3HB Series Distinct by Design, Distinguished in Performance K3HB-H K3HB-S K3HB-X K3HB-V Features Red-Green Display Allows Easy Recognition of Judgment Results Short Body with Depth of Only 95 mm from Behind the Front Panel • The measurement value display can be set to switch between red and green in accordance with the status of comparative outputs. This means that the status can be
|
Original
|
75-344-7080/faxnl-21322356-81-300/fax847-843-7900/fax+106835-3011/fax21-5037-2222/fax0805-1mk3hb-vlck3hb-vk3hb-xvdk3hb-ssewingwaterproof wireless water level sensorplc omron
|
PDF
|
all mosfet equivalent book
Abstract: free all transistor equivalent book free transistor equivalent book power bjt advantages and disadvantages AN9010 vmosfet BJT isolated Base Drive circuit Drive Base BJT FQP10N20 n Power mosfet depletion
Contextual Info: July, 2000 AN9010 MOSFET Basics By K.S.Oh CONTENTS 1. History of Power MOSFETs. 2 2. FETs . 3
|
Original
|
an9010all mosfet equivalent bookfree all transistor equivalent bookfree transistor equivalent book+6power bjt advantages and disadvantagesvmosfetbjt isolated base drive circuitdrive base bjtfqp10n20n power mosfet depletion
|
PDF
|
MT1115
Abstract: 2N3303 FPT100 phototransistor UA739 equivalent transistor bc 554 pnp mt1039 ft2974 fairchild 2N3565 FD6666 diode transistor npn Epitaxial Silicon SST 117
Contextual Info: Fairchild Semiconductor T ransistor and Diode Data Catalog 1970 The Fairchild Semiconductor Transistor anc Diode Data Catalog is an all-inclusive volume of product information covering diodes anc transistors. Selection guides and data sheets fot each category of products assist you ir
|
OCR Scan
|
108thmt11152n3303fpt100 phototransistor+7ua739 equivalenttransistor bc 554 pnpmt1039ft2974fairchild 2n3565fd6666 diodetransistor npn epitaxial silicon sst 117
|
PDF
|
K3HB-V
Abstract: flk3b k3hb-vlc omron load cell k3hb-x manual K3HB
Contextual Info: Digital Indicators K3HB Series Distinct by Design, Distinguished in Performance K3HB-H K3HB-S K3HB-X K3HB-V Features Red-Green Display Allows Easy Recognition of Judgment Results Short Body with Depth of Only 95 mm from Behind the Front Panel • The measurement value display can be set to switch between red and green in accordance with the status of comparative outputs. This means that the status can be
|
Original
|
10-8391-3005/fax75-344-7080/faxnl-21322356-81-300/fax+70205-1mk3hb-vflk3bk3hb-vlcomron load cellk3hb-x manualk3hb
|
PDF
|
k3hb-vlc
Abstract: hr31 humidity sensor K32-BCD K3HB-S k3hb-x manual K3HB-XVD K3HB omron load cell K33-B OMRON E5
Contextual Info: Digital Indicators K3HB Series Distinct by Design, Distinguished in Performance K3HB-H K3HB-S K3HB-X K3HB-V Features Red-Green Display Allows Easy Recognition of Judgment Results Short Body with Depth of Only 95 mm from Behind the Front Panel • The measurement value display can be set to switch between red and green in accordance with the status of comparative outputs. This means that the status can be
|
Original
|
75-344-7080/faxnl-21322356-81-300/fax847-843-7900/fax+136835-3011/fax21-5037-2222/fax0805-1mk3hb-vlchr31 humidity sensork32-bcdk3hb-sk3hb-x manualk3hb-xvdk3hbomron load cellk33-bomron e5
|
PDF
|
Zener Diode c62
Abstract: how to test Triode Thyristors thyristor testing thyristor circuits application of thyristor
Contextual Info: TISP Terms and Letter Symbols Introduction Thyristor-based overvoltage protectors for telecom systems were first introduced in the late 1970s. The characteristics of thyristor SPDs Surge Protective Devices are very different than the normal SCR (Silicon Controlled Rectifier) and TRIAC (Triode for AC Control) type
|
Original
|
1970szener diode c62how to test triode thyristorsthyristor testing+2thyristor circuitsapplication of thyristor
|
PDF
|
all mosfet equivalent book
Abstract: P-Channel Depletion Mosfets free transistor equivalent book free all transistor equivalent book n mosfet depletion 600V P-Channel Depletion Mode Field Effect Transistor fairchild power bjt datasheet MOSFET 800V 10A vmosfet n Power mosfet depletion
Contextual Info: November 2,1999 AN9010 MOSFET Basics April 1999 R & D 2 Group Fairchild Korea Semiconductor CONTENTS 1. History of Power MOSFETs. 2 2. FETs . 2
|
Original
|
an9010all mosfet equivalent bookp-channel depletion mosfetsfree transistor equivalent book+7free all transistor equivalent bookn mosfet depletion 600vp-channel depletion mode field effect transistorfairchild power bjt datasheetmosfet 800v 10avmosfetn power mosfet depletion
|
PDF
|
zero crossing detector
Abstract: LM1113 DTL or TTL integrated logic circuits LM111 LM710 zero crossing IC LM111 equivalent LB-12 LM106 Widlar
Contextual Info: National Semiconductor Linear Brief 12 Robert J. Widlar January 1970 The IC voltage comparators available in the past have been designed primarily for low voltage, high speed operation. As a result, these devices have high input error currents, which limit their usefulness in high impedance circuitry. An IC is
|
Original
|
zero crossing detectorlm1113dtl or ttl integrated logic circuitslm111+6lm710zero crossing iclm111 equivalentlb-12lm106widlar
|
PDF
|
