EPSILAM Search Results

M112

Abstract: SD1541-01 SD1541-1 A 1458
Contextual Info: SD1541-01 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS • DESIGNED FOR HIGH POWER PULSED IFF AND DME APPLICATIONS • 400 W min. DME 1025 - 1150 MHz • 6.5 dB min. GAIN • REFRACTORY GOLD METALLIZATION • EMITTER BALLASTING AND LOW THERMAL RESISTANCE FOR RELIABILITY AND

MRB11040W

Abstract: QQHb32b International Power Sources NPN Silicon Epitaxial Planar Transistor copper permittivity
Contextual Info: 33'/3 Preliminary specification Philips Semiconductors NPN silicon planar epitaxial microwave power transistor P H IL IP S MRB11040W 7110fi2Li 004b32M 0M2 M P H I N SbE D INTERNATIONAL FEATURES DESCRIPTION APPLICATIONS • Input prematching cell allows an

MX0912B250Y

Abstract: 33-AS IEC134 015 capacitor philips
Contextual Info: Data shaat •tatua data of Issu* HILXPS MX0912B250Y Preliminary specification NPN silicon planar epitaxial microwave power transistor June 1992 SbE D INTERNATIONAL • 7110fl2b Ü04b34fc, 7Q3 H P H I N FEATURES APPLICATION DESCRIPTION • Interdigitated structure; high

epsilam 10

Abstract: BY239 BDT91 LLE18150X SC15 erie 1250-003 diode BY239
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET LLE18150X NPN silicon planar epitaxial microwave power transistor Product specification File under Discrete Semiconductors, SC15 Philips Semiconductors September 1994 Philips Semiconductors Product specification NPN silicon planar epitaxial

SD1899

Contextual Info: SD1899 RF & MICROWAVE TRANSISTORS SATELLITE COMMUNICATIONS APPLICATIONS . . REFRACTORY/GOLD METALLIZATION EFFICIENCY - 50% TYPICAL POUT = 30 W MIN. WITH 9.3 dB GAIN .250 x .320 2LFL M170 epoxy sealed ORDER CODE SD1899 BRANDING SD1899 PIN CONNECTION DESCRIPTION

RX1214B150W

Contextual Info: J J _ L_ _ N AMER PHILIPS/DISCRETE OLE D • I J1 J ^ O5O3J 1 3 00151Û3 T ■ RX1214B150W X T - 33^ ¡^r MICROWAVE POWER TRANSISTOR NPN silicon planar epitaxial microwave power transistor, intended for use in a common-base class-C

Contextual Info: • N AMER PHILIPS/DISCRETE □bE D ■ bbS3T31 D01S1S3 1 ■ PZB16035U _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _A r-3 3 -u % MICROWAVE POWER TRANSISTORS N-P-N transistor fo r use in common-base, class-B, am plifier under c.w. conditions in m ilita ry and professional applications up to 1,6 GHz.

Contextual Info: N AUER PHI L I P S / D I S CR E T E □ bE D bb53T31 DD1SE17 1 RZ1214B65Y T - 3 3 - 5 ~ PULSED M IC R O W A VE POWER TRANSISTOR N:P-N silicon microwave power transistor for use in a common-base, class-B wideband amplifier and operating under pulsed conditions in L-band radar applications.

Contextual Info: Philips Components MZ0912B100Y D ISC R ETE SEM ICO N D U CTO R S D a ta s h a e t • t a lu s P re fim in a iy s p e c ific a tio n d a le o f le s u e J u ly 1 9 9 0 NPN silicon planar epitaxial microwave power transistor FEATU RES APPLICATIO N D ESCRIPTIO N

Contextual Info: 11_ N AMER PHILIPS/DISCRETE LbSBTBl 0015133 OLE D RX1214B150W r J - 3 2 ^ I 'o ' M IC R O W A V E POW ER TRANSISTOR NPN silicon planar epitaxial microwave power transistor, intended for use in a common-base class-C broadband pulse power amplifier, operating in the 1.2 to 1.4 GHz frequency range.

Contextual Info: N AMER PHILIPS/DISCRETE DbE D ttiS3T31 D01SQ31 1 • LZ1418E100R T -3 S -U M IC R O W AVE LIN EAR POW ER TR AN SISTO R N-P-N silicon power transistor fo r use in a common-emitter, class-A amplifier from 1,4 GHz to 1,8 GHz in c.w. conditions in m ilitary and professional applications.

Epsilam-10

Contextual Info: MOTOROLA Order this document by MRF898/D SEMICONDUCTOR TECHNICAL DATA NPN Silicon RF Power Transistor LAST SHIP 15MAR02 The RF Line MRF898 Designed for 24 Volt UHF large–signal, common base amplifier applications in industrial and commercial FM equipment operating in the range of

Motorola transistors MRF 947

Abstract: trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp
Contextual Info: Selector Guide 1 Discrete Transistor Data Sheets Amplifier Data Sheets Monolithic Integrated Circuit H Data Sheets mm Case Dimensions Cross Reference and Sales Offices 6 M MOTOROLA RF Device Data This publication presents technical information for the several product families that

5308-2CC

Abstract: 6 pin cdi epsilam 10 epsilam InMarSat power M151 SD1893-03 cdi ic
Contextual Info: SD1893-03 RF & MICROWAVE TRANSISTORS 1.6 GHZ SATCOM APPLICATIONS . . . . 1.65 GHz 28 VOLTS OVERLAY DIE GEOMETRY GOLD METALLIZATION HIGH RELIABILITY AND RUGGEDNESS P OUT = 10 W MIN. WITH 11.0 dB GAIN COMMON BASE .230 2LFL M151 hermetically sealed ORDER CODE

Philips CD 303

Abstract: PZB16040U
Contextual Info: « N AUER P H IL IP S / D IS C R E T E U t V h L U P M t N I OLE ]> • U À IA bbSBTBl O D IS IS T 2 ■ " ■ PZB16040U This data sheet contains advance information and specifications are subject to change w ithout notice. J V r-s 3 ~ n M IC R O W A V E PO W ER TRA N SISTO R

RZB12050Y

Abstract: ATC capacitor transistor 421
Contextual Info: N AMER PHILIPS/DISCRETE ObE D • b b 5 3 T 31 □ □ 15 2 7 =5 1 ■ RZB12050Y V 'r-? 3 - 3 PULSED MICROW AVE POW ER TRA N SISTO R NPN silicon microwave power transistor intended for use in a common-base, class-C narrowband amplifier operating under pulsed conditions.

NPN Silicon Epitaxial Planar Transistor

Abstract: MZ0912B50Y TACAN
Contextual Info: Data sheet statut Preliminary apedfrcatfon date ol Issue July 1990 MZ0912B50Y NPN silicon planar epitaxial microwave power transistor F EATU RES APPLICATION d e s c r ip t io n • Interdigitated structure; high emitter efficiency. • O iffused emitter ballasting

PZB16035U

Abstract: discrete transistor amplifier 2.5 ghz
Contextual Info: N AMER PHILIPS/DISCRETE □ bE D • bb53*i31 Q01S1S3 1 ■ L PZB16Ô35U r-33-it MICROWAVE POWER TRANSISTORS N-P-N transistor for use in common-base, class-B, amplifier under c.w. conditions in military and professional applications up to 1,6 GHz. Features

RX1011B350Y

Abstract: broad-band Microwave Class-C Transistor Amplifiers
Contextual Info: N AMER P H I L I P S / D I S C R E T E bbSB^l ObE D 0 0 1 5 1 7 ^ fi D EVELOPM EN T DATA RX1011B350Y T h is data sheet contains advance inform ation and specifications are subject to change w ith out notice. r-f 33-/S" PULSED MICROWAVE POWER TRANSISTOR NPN silicon planar epitaxial microwave power transistor intended for use in common-base, class-C

PZ1418B30U

Abstract: PZ1721B25U PZ2024B20U
Contextual Info: N AMER PHILIPS/DISCRETE DbE D • LbSBTBl DD1S137 3 ■ " PZ1418B30U PZ1721B25U PZ2024B20U J T - 3 3 - U MICROWAVE POWER TRANSISTORS FOR WIDEBAND AMPLIFIERS N-P-N transistors for use in common-base, class-B, broadband amplifiers under c.w. conditions in m ilitary and professional applications.

m147 transistor

Abstract: 1029F M147 ci m147 SD1868
Contextual Info: Hi f I r l / C lU O J v f I If P ro g re s s P o w ered b y T ec h no log y 140 Com m erce Drive M ontgom eryville, PA 18936-1013 Tel: 215 631-9840 SD1868 RF & MICROWAVE TRANSISTORS MICROWAVE TELECOMMUNICATION APPLICATIONS FREQUENCY 1.6-1.65GHz POWER OUT

HUGHES mcw 550

Abstract: discharge capacitor welding hughes welder welder hughes mcw 550 hughes capacitor discharge welder mcw-550 VTA90 welding "application note" MAXY90
Contextual Info: Beam Lead Device Bonding to Soft Substrates Application Note 993 Introduction The hard gold surface on standard PC boards combined with soft substrate materials makes it almost impossible to successfully bond beam lead devices onto the boards with normally recommended

Contextual Info: SD1899 RF & MICROWAVE TRANSISTORS SATELLITE COMMUNICATIONS APPLICATIONS . . REFRACTORY/GOLD METALLIZATION EFFICIENCY - 50% TYPICAL POUT = 30 W MIN. WITH 9.3 dB GAIN .250 x .320 2L FL M170 epoxy sealed O RDER CODE SD1899 BRANDING SD1899 PIN CONNECTION DESCRIPTION

epsilam

Abstract: SD1886 25CC M155 TCC2023-6 chip die npn transistor NPN microwave power transistor 865
Contextual Info: H * : If/lvf T»j-m ! fII P ro g re s s P o w e re d b y T ec h no log y "*4 Commerce Drive Montgom ery ville, PA 18936-1013 Tel: 215 631-9840 T C L 2 0 ^ O - D RF & MICROWAVE TRANSISTORS MICROWAVE TELECOMMUNICATION APPLICATIONS • ■ ■ ■ ■ ■