EPROM 27C256 28 PIN DIP 150 NS J PACKAGE Search Results

N27C256-200V10

Contextual Info: in t j, 27C256 256K 32K x 8 CHMOS EPROM • High Speed — 120 ns Access Time ■ Low Power Consumption — 100 juA Standby, 30 mA Active ■ Fast Programming — Quick-Pulse Programming Algorithm — Programming Time as Fast as 4 Seconds ■ EPI Processing

27C256-200V10

Abstract: eprom 27c256 28 PIN DIP 120 NS P27C256-120V10 27C256DC INTEL 27128A EPROM 2732A INTEL 24 PIN CERAMIC DIP 27C256 N27C256-150V10 386TM
Contextual Info: In te l’ 27C256 256K 32K x 8 CHMOS EPROM High Speed — 120 ns Access Tim e EPI Processing — Maximum Latch-up Immunity Low Pow er Consumption — 100 juA Standby, 30 mA Active Simple Interfacing — T w o Line Control — CMOS and TTL Com patible Fast Programming

27CS12

Abstract: 27C256-200V10 27C126 27c256-200 D27c256b intel 27126 intel PLD 27C256
Contextual Info: INTEL CORP flEflORY/PLD/ 44E D 405bl7b GDVIS^ ' T 7% in ta l T • ITL2 ' ß - 2 ci 27C256 256K (32K x 8 CHMOS EPROM High Speed — 120 ns Access Time Low Power Consumption — 100 /xA Standby, 30 mA Active Fast Programming — Quick-Pulse Programming

Contextual Info: $ 27C256 M ic r o c h ip 256K 32K x 8 CMOS EPROM PACKAGE TYPE FEATURES TSOP • High speed performance .2 8 / ' 27 / 26 25 24 23 22 - 90 ns access time available • CMOS Technology for low power consumption - 20 mA Active current - 100 nA Standby current

Philips FA 291

Abstract: 27C256A12A 27C256 Signetics 27c256 eprom 27c256 dfp 740 27C256-15FA 550mi 27C256-15 27C256-17
Contextual Info: OEC 2 6 1990 Philips Components-Signetics Document No. 853-0094 ECN No. 01040 Date of Issue November 12,1990 Status Product Specification 27C256 256K-bit CMOS EPROM 32K x 8 Memory Products PIN CONFIGURATION DESCRIPTION FEATURES Philips Components-Signetics 27C256

Contextual Info: z/czso: inursaay. May i s issm Revision: August 19,1994 CY27C256 W CYPRESS Features • Wide speed range — 45 ns to 200 ns commercial and military • Low power — 248 mW (commercial) — 303 mW (military) • Low standby power — Less than 83 mW when deselected

eprom 27c256 28 PIN DIP 120 NS

Abstract: 27c256 intel eprom 2732A 2716 eprom datasheet 27C256DC a12g intel 2716 eprom 27C256 N27C256-200V10 80286 address decoder
Contextual Info: in t e i 27C256 256K 32K x 8 CHMOS EPROM High Speed — 120 ns Access Time EPI Processing — Maximum Latch-up Immunity Low Power Consumption — 100 ( i A Standby, 30 mA Active Simple Interfacing — Two Line Control — CMOS and TTL Compatible Fast Programming

1SHB

Abstract: 27C256 AMD 27C256 27C256 amd
Contextual Info: Advanced Micro Devices Am27C256 256 Kilobit 32,768 x 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • Latch-up protected to 100 mA from -1 V to ■ Fast access time Vcc + 1 V — 55 ns ■ High noise immunity ■ Low power consumption ■ Versatile features for simple interfacing

Contextual Info: M 27C256 ic r o c h ip 256K 32K x 8 CMOS EPROM FEATURES PACKAGE TYPE TSOP • High speed performance - 90 ns access tim e available • CMOS Technology for low pow er consumption - 20 mA Active current - 100 nA S tandby current • Factory program m ing available

AMD 27C256 255

Abstract: EPROM am27c256 120 AM27C256 AMD 27C256
Contextual Info: Advanced Micro Devices Am27C256 256 Kilobit 32,768 x 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • Latch-up protected to 100 mA from -1 V to Vcc + 1 V ■ Fast access time — 55 ns ■ High noise immunity ■ Low power consumption — 20 jiA typical CM OS standby current

27C256

Abstract: 27C256 rom
Contextual Info: Preliminary KM23C4000 CMOS MASK ROM 5 1 2 K x 8 Bit Mask ROM FEATURES GENERAL DESCRIPTION • • • • • • • • The KM23C4000 is a fu lly s ta tic m ask program m able ROM organized as 524,288 x 8 bit by using silicon-gate CMOS process technology.

Contextual Info: 27C256 M i c r o c h ip 256K 32K x 8 CMOS EPROM FEATURES P A C K A G E TYPE • High speed performance - 90 ns access time available • CMOS Technology for low power consumption - 20 mA Active current - 100 nA Standby current • Factory programming available

Contextual Info: M 27C256 ic r o c h ip 256K 32K x 8 CMOS EPROM FEATURES PIN CONFIGURATION • High speed performance — 90 ns access time available • CMOS Technology for low power consumption — 20 mA Active current — 100 nA Standby current • Factory programming available

D2575

Abstract: AM27C256 AM27C256-55 AM27C256-70
Contextual Info: AD V MICRO MEMORY t4E » • D257S2Ô G03n33 7SO CI Advanced Micro Devices Am27C256 256 Kilobit (32,768 x 8-Bit) CMOS EPROM DISTINCTIVE CHARACTERISTICS ■ ■ Fast access time Latch-up protected to 100 m A from -1 V to Vcc + 1 V — 55 ns ■ Low power consumption

Contextual Info: b5Q112b NATL SEMICOND MEMORY 3 3 1E D March 1989 _ i i l Semiconductor 27C256 262,144-Bit (32,768 x 8) UV Erasable CMOS PROM Military Qualified 35-V General Description Features The 27C256 is a high-speed 256K UV erasable and electri­ cally reprogrammable CMOS EPROM, Ideally suited for ap­

Contextual Info: M 27C256 ic r o c h ip 256K 32K x 8 CMOS EPROM FEATURES PIN CONFIGURATION • High speed performance — 90 ns access time available • CMOS Technology for low power consumption — 20 mA Active current — 100 (iA Standby current • Factory programming available

27c256-15

Abstract: 27C256-20
Contextual Info: Philips Components-Signetics 27C256 Document No. 8 5 3 -0 0 94 ECN No. 0 10 4 0 Date of Issue N ove m b e r 1 2 ,1 9 9 0 Status Pro du ct S p ecification 256K-bit CMOS EPROM 32K x 8 M e m ory P ro du cts PIN CONFIGURATION DESCRIPTION FEATURES Philips C o m p o n e n ts -S ig n e tic s 27C 256

27C080

Abstract: EPROM 27c010 AT 27C040 die 27C256 General Semiconductor 27C256-70 27C256-45 FM27C256 NM27C256 27C512 UV 27c512 smd
Contextual Info: S E M IC O N D U C T O R January 1998 tm FM27C256 262,144-Bit 32K x 8 High Speed CMOS EPROM General Description The FM 27C256 is a High Perform ance 32K x 8 UV Erasable EPROM . It is m anufactured using an advanced C M OS pro­ cess technology enabling it to operate at speeds as fast as

27c256

Abstract: Signetics 27c256 OT27C256
Contextual Info: Signetics 27C256 256K CMOS UV Erasable PROM 32 K x 8 Product Specification Military Application Specific Products DESCRIPTION CERDIP PIN CONFIGURATION The Signetics 27C256 CMOS EPROMs are 256K-BR 5V only memories organized as 32,768 words of 8 bits. They employ

27C256

Abstract: eprom 27c256 28 PIN DIP 150 NS 27C256-12 signetics eprom 27c256 28 PIN DIP 150 NS j package signetics 27C256 27c256 signetics eprom 27c256 28 PIN DIP 120 NS 27C256DC ti 27c256 27C256-12
Contextual Info: Philips Components-Signetics 27C256 Document No. 8 53 -0 0 94 ECN No. 01040 Date of Issue Novem ber 12, 1990 Status Product Specification 256K-bit CMOS EPROM 32K x 8 Memory Products PIN CONFIGURATION DESCRIPTION FEATURES Philips Com ponents-Signetics 2 7C 256

Signetics 27c256

Abstract: 27C256 UV 27C256 F0342
Contextual Info: S i g n e t i c s Military Application Specific Products DESCRIPTION 1 2 7 C 2 5 6 I I 256K CMOS UV Erasable PROM 32Kx8 | Product Specification CERDIP PIN CONFIGURATION The Signetics 27C256 CMOS EPROMs are 2S6K-BK 5 V only memories organized as 32,768 words of 8 bits. They employ

27c080

Abstract: 27C512 SMD
Contextual Info: EM ICDNDUCTOR J anuary 1998 t FM27C256 262,144-Bit 32K x 8 High Speed CMOS EPROM General Description The FM 27C256 is a High Perform ance 32K x 8 UV Erasable EPROM. It is m anufactured using an advanced C M OS pro­ cess technology enabling it to operate at speeds as fast as

Contextual Info: GENERAL INSTRUMENT 27C256 PRELIMINARY INFORMATION 256K 32K x 8 CMOS UV Erasable PROM FEATURES PIN CONFIGURATIONS Top View V p p E •1 A 12C 2 28 □ VDD 27 □ A14 A7tZ 3 26 H A13 A6 C 4 25 □ A8 A5C 5 24 □ A9 A4 d The 27C256 is available in an extensive selection of

intel 27010 eprom

Abstract: 27010 27010 eprom eprom 27010 EPROM intel 27256 INTEL 27256 EPROM eproms 27256 27512 intel 27512 eprom 27C256
Contextual Info: 27010 1M 128K x 8 BYTE-WIDE EPROM • Compatible with 28-Pin JEDEC EPROMs: 27256, 27512 ■ Complete Upgrade Capability — PGM “Don’t Care” Status Allows Wiring in Higher Order Addresses ■ Standard EPROM Features — TTL Compatibility — Two Line Control