EN34 Search Results

Contextual Info: Ordering number : EN3478 S M fr o i I FCÏ43 No.3478 N P N E p itax ial P la n a r Silicon C om posite T ra n sisto r Switching Applications with Bias Resistance A p p lic a tio n s •S w itching circuits, in v e rte r circu its, interface circuits, d riv er circu its

2SK1445

Contextual Info: O rdering num ber: EN3448A 2SK1445 N0.3448A N-Channel Silicon MOSFET SA\YO Ultrahigh-Speed Switching Applications i Features •Low ON-state resistance. • Ultrahigh-speed switching. • Micaless package facilitating easy mounting. unit Absolute Maximum Ratings at Ta = 25°C

2SK1443

Contextual Info: O rdering num ber: EN3446A 2SK1443 N-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications F e a tu re s • Low ON-state resistance. •Ultrahigh-speed switching. ■Micaless package facilitating easy mounting. A bsolute M axim um R atings a t Ta = 25°C

EN3445

Abstract: 2SK1442 2420I
Contextual Info: Ordering number: EN3445 2SK1442 No. 3445 N-Channel MOS Silicon FET sa H yo i Very High-Speed Switching Applications F e a tu re s •Low ON-state resistance. • Very high-speed switching. A b so lu te M axim um R atin g s a t Ta=25°C Drain to Source Voltage

2SK1456

Abstract: R6S DIODE R20J
Contextual Info: Ordering number : EN3459 2SK1456 N-Channel MOS Silicon FET Very High-Speed Switching Applications F e a tu re s • Low O N-state resistance. •Very high-speed switching. ■Converters. b so lu te M axim um R atin g s a t Ta=25°C D rain to Source Voltage

GWJ5

Abstract: 2SK1466 200V 50A mos fet so280
Contextual Info: ¡O rd e rin g number: EN3469 2SK1466 No.3469 N-Channel MOS Silicon FET Very High-Speed Switching Applications Features • Low ON-state resistance. • Very high-speed switching. • Converters. Absolute Maximum Ratings at Ta = 25°C Drain to Source Voltage

2SK1438

Contextual Info: Ordering n u m b e r: EN3441 2SK1438 N-Channel MOS Silicon FET Very High-Speed Switching Applications F eatures •Low ON-state resistance. ■Very high-speed switching. A bsolute Maximum Ratings at Ta=25°C Drain to Source Voltage Vdss Gate to Source Voltage

Contextual Info: Ordering number : EN3479 FC144 No.3479 NPN Epitaxial Planar Silicon Composite Transistor Switching Applications with Bias Resistance A p p licatio n s • Switching circuits, inverter circuits, interface circuits, driver circuits. F e a tu re s • On-chip bias resistances R1 = 2.2kfi, R2 = lOkO

DBF60

Abstract: cd 1191 DBF60T DBF60TC DBF60TE DBF60TG
Contextual Info: Ordering number : EN3402 _ No. 3402 DBF60T Silicon Diffused Junction Type 6.0A Single-Phase Bridge Rectifier A pplication •For prim ary rectification as switching regulator F e a tu re s • High reliability attained by glass passivation ■High surge

AN 34002

Abstract: marking 805 FC805 SB05 IR150 an 34001
Contextual Info: Ordering number :EN3400B FC805 Silicon Schottky Barrier Diode 30V, 500mA Rectifier Features Package Dimensions • Low forward voltage VF max=0.55V . · Fast reverse recorvery time (trr max=10ns) . · Composite type with 2 diodes contained in the CP package currently in use, saving the mounting space

2sc536

Abstract: B632K d612k 2sc1175 8Q transistor d612 2SB632 2SB632K 341G 2SB6
Contextual Info: Ordering' number; EN341G 2SB632.632K/2SD612.612K N 0 .3 4 IG PNP/NPN Epitaxial Planar Silicon Transistors SAXYO i 25V/35V, 2A Low-Frequency Power Amp Applications F eatures • High collector dissipation and wide ASO. : 2SB632,632K A b solu te M axim um R atings at Ta = 25°C

2SK10S

Abstract: 2SK1053 EN3440 1A05A
Contextual Info: Ordering number : EN3440 2SK1053 No.3440 N-Channel MOS Silicon FET Very High-Speed Switching Applications F eatures • Low ON-state resistance. • Very high-speed switching. A bsolute M axim um R atings at Ta=25°C Drain to Source Voltage Vdss Gate to Source Voltage

Contextual Info: Ordering number : EN3462A N0.3462A 2SK1459 N-Channel Silicon MOSFET Ultarahigh-Speed Switching Applications Features • Low ON-state resistance. • Ultarahigh-speed switching. • Micaless package facilitating mounting. Absolute Maximum Ratings at Ta = 25°C

DSC015

Contextual Info: Ordering number :EN3408 D SCO 15 No.3408 SA\YO Silicon E pitaxial P la n ar Type i High-Voltage Switching Diode F e a tu re s •Ideally suited for use in hybrid ICs because of small-sized package. • High breakdown voltage. A b so lu te M axim um R a tin g s a t Ta = 25°C

2SK1461

Abstract: ITR01609 ITR01610 ITR01611 ITR01612 EN3464A
Contextual Info: 2SK1461 Ordering number : EN3464A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK1461 General-Purpose Switching Device Applications Features • • Low ON-state resistance. Ultrahigh-speed switching. Specifications Absolute Maximum Ratings at Ta=25°C

LB1662D

Abstract: LB1662M MFP16FS motor dc fan 48v 3097B
Contextual Info: Ordering number : EN3416B LB1662D LB1662M Monolithic Digital IC DC Fan Motor Drivers Overview The LB1662D, 1662M are 2-phase brushless motor drivers operated from 5V power supply. Motor Lock protection and automatic return can be provided with a minimum number of external parts.

2SA1653

Abstract: T 2066
Contextual Info: Ordering number : EN3477 _FC142 PNP Epitaxial Planar Silicon Composite Transistor Switching Applications with Bias Resistance A pplications • Switching circuits, inverter circuits, interface circuits, driver circuits F eatu re s • On-chip bias resistances Rl = 4.7kH, R2= 10ki2

DBF40T

Abstract: DBF40TC DBF40TE DBF40TG
Contextual Info: [ord ering number :EN3403A _ DBF40T Silicon Diffused Junction Type IS A % Y O i Applications Package Dimensions • F a r p rim ary re c tific a tio n as sw itc h in g reg u lato r. u n it:m in / / 1203 / / Features • H ig h re lia b ility a tta in e d g la ss p a ssiv a tio n .

EN3404

Abstract: DBF20T DBF20TC DBF20TE DBF20TG
Contextual Info: Ordering number : EN3404 _ DBF20T Silicon Diffused Junction Type 2.0A S ingle-Phase Bridge Rectifier A p p lic a tio n • For prim ary rectification as sw itching regulator. F e a tu re s • High reliability attained by glass passivation. • High surge.

3400B

Abstract: FC805 SB05-03C 34002
Contextual Info: Ordering n u m b e r: EN3400B _ FC805 NO.3400B Silicon Schottky Barrier Diode 30V, 500mA Rectifier F eatu re s • Low forward voltage Vp max = 0.55V . •Fast reverse recovery time (trr max = 10ns). • Composite type with 2 diodes contained in the CP package currently in use, saving the mounting space

k1459

Abstract: 2SK1459LS ITR01582 ITR01583 ITR01584 ITR01585 ITR01586 ITR01587 N3001
Contextual Info: 2SK1459LS Ordering number : EN3462C SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK1459LS Ultrahigh-Speed Switching Applications Features • • Low ON-resistance, ultrahigh-speed switching. Attachment workability is good by Mica-less package.

Contextual Info: Ordering number :EN3401A FC806 Silicon Schottky Barrier Diode 50V, 100mA Rectifier Features Package Dimensions • Low forward voltage VF max=0.55V . · Fast reverse recorvery time (trr max=10ns) . · Composite type with 2 diodes contained in the CP package currently in use, saving the mounting space

SB01

Abstract: FC806 marking 806
Contextual Info: Ordering number :EN3401A FC806 Silicon Schottky Barrier Diode 50V, 100mA Rectifier Features Package Dimensions • Low forward voltage VF max=0.55V . · Fast reverse recorvery time (trr max=10ns) . · Composite type with 2 diodes contained in the CP package currently in use, saving the mounting space

T03A

Abstract: T-03-A 2SK1052
Contextual Info: Ordering number : EN3439 r SA\YO 2SK1052 No.3439 N-Channel MOS Silicon FET i Very High-Speed Switching Applications F eatures • Low ON-state resistance. • Very high-speed switching. A bsolute Maximum Ratings at Ta = 25°C Drain to Source Voltage Vdss Gate to Source Voltage