ELY 1120 Search Results

Contextual Info: ALUMINUM ELECTROLYTIC CAPACITORS E xtrem ely Low Im pedance, High R eliability Low Impedance Long Life Anti-Solvent Feature {Through 100V only i High reliability withstanding 5000hour load life at +105°C 3000/2000hours for smaller case sizes as specified below).

PM 438 BL

Abstract: L200k CVS1000
Contextual Info: ALUMINUM ELECTROLYTIC CAPACITORS PM xticKicoxi Extrem ely Low Im pedance, High Reliability Low Impedance Long Life Anti-Solvent Feature Through 100V only • High reliability withstanding 5000hour load life at +105°C (3000/2000hours for sm aller case sizes as specified below).

marconi

Contextual Info: M ARCO NI A.C. M AINS VALVES 1 MS 4, Screen Grid, 22/6 Marconi MS.4 is a " general purpose " screen grid valve for universal use. Possessing an extrem ely low capacity— less than .002 micro-micro­ farad — it ensures stable amplification where high conductance valves will not

PY 472 M

Contextual Info: ALUMINUM ELECTROLYTIC CAPACITORS E xtrem ely Low Im pedance, High R eliability Long Life Low Impedance Anti-Solvent Feature i Same case size as PF series, but extremely low impedance as little as 1/2 or PF series, i High reliability withstanding 5000 hours load life at +105°C 3000/2000 hours for smaller

Contextual Info: ALUMINUM ELECTROLYTIC CAPACITORS PL Extremely Low Impedance, High Reliability Low Impedance Long Life • Same case sizes as PF series, but extrem ely lo w im pedance as little as 1 /2 of PF series • High reliability w ith sta n ding BOOOhour load life at + 1 0 5 °C 3000/2000hours for smaller

Contextual Info: ALUMINUM ELECTROLYTIC CAPACITORS PL n îc liic o n Extremely Low impedance, High Reliability series • Sa m e case size as P F series, but extrem ely low im pedance as little as 1/2 or P F series. • High reliability withstanding 5000 hours load life at + 1 0 5 ”C 3 0 0 0 /2 0 0 0 hours for sm aller

gal20v8qs

Abstract: GAL20V8QS-15LNC GAL20V8S gal programming algorithm GAL20V8QS-10L cs 2648 GAL20V8QS15LMI WGB 03 HL 006 pAL programming Guide GAL20V8QS10LNC
Contextual Info: GAL20V8QS-10L, -15L 24-Pin 0.8ja EECMOS PLDs General Description Features T h e EECM OS G A L20V8Q S devices are fabricated using N atio n a l’s C S80BEV 0.8/x E lectrically E rasable CM O S pro­ cess. This advanced p rocess m akes N ational's G A L20V 8Q S extrem ely la st, allow ing contro lle d output

NEC RDRAM

Abstract: R135 ATA121 LN370 IEU-1401 REF05
Contextual Info: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT 8M-BIT Rambus DRAM 1M-WORD X 8-BIT X 1-BANK D escription The 8-M egabit Rambus DRAM RDRAM™ is an extrem ely-high-speed CMOS DRAM organized as 1M w ords by 8 bits and capable o f bursting up to 256 bytes o f data at 2 ns per byte. The use of Rambus Signaling

mcr 5102

Abstract: AZ-155-1 UPL 2040
Contextual Info: n ic liic o n ALUMINUM ELECTROLYTIC CAPACITORS E x tre m e ly L o w Im p e d a n c e , H ig h R e lia b ility a series Low Impedance Long Life Anti-Solvent Feature • S a m e c a s e s ize a s P F s eries , but e xtre m ely low im p e d a n c e a s little a s 1 /2 or P F series.

IC-451

Abstract: IC451 IC-455 IC-420 IC-435 IC456 9013 C IC421 IC-453 IC454
Contextual Info: T3P Tim ely Test Tool with Probe-pi * - HJ y V ft 77, h*V*rv h m a- a r? I i ^ e T I vs T VI' VÎ ^ Ve V£ T * Q » % Kf r í 5 * si C* üi Q MH S SB ? •w §□ K w ví 3 mQ d a I * C W 3fi S' W § & a Tÿ ol y ff 35 W ví i* ÒJ Hl rí H 3 Vi h£ «*

FeRAM

Abstract: MN63Y1002D01 proximity card ferroelectric IR-700
Contextual Info: Panasonic RF-ID Card MN63Y1002D01 with 1120-bit Ferroelectric Nonvolatile Memory I Overview M N 63Y 1002D 01 is a com plete radio frequency transponder subsystem that fits into a card package for ease of use and versatility. W ith 1120 bits of high speed ferroelectric m em ory FeR A M and all necessary analog and

MN63Y1002D01

Abstract: Proxim ELY 1120
Contextual Info: Panasonic RF-ID Card MN63Y1002D01 with 1120-bit Ferroelectric Nonvolatile Memory I Overview M N 63Y 1002D 01 is a com plete radio frequency transponder subsystem that fits into a card package for ease of use and versatility. W ith 1120 bits of high speed ferro electric m em ory FeR A M and all necessary analog and

GP1250

Contextual Info: DIOTEC ELECTRONICS CORP. 18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: 310 767-1052 Fax: (310)767-7958 Data Sheet No. HVGP-1000-1B 1 HIGH VOLTAGE DIODE RECTIFIERS MECHANICAL SPECIFICATION FEATURES Proprietary "Soft Glass w " P/N junction passivation

uv flame sensor

Abstract: thermal conductivity sensor 27713 4h sic ballistic sensor Cree Microwave cree package structure X 1017 sac 326 2771J
Contextual Info: PHYSICAL AND ELECTRONIC PROPERTIES OF SILICON CARBIDE The physical and electronic properties of SiC make it the foremost semiconductor material for short wavelength optoelectronic, high temperature, radiation resistant, and high-power/high-frequency electronic devices. A summary of the most impor­

Contextual Info: OHMITE PCA-PCD Models M anufacturing Com pany O hm itror Solid State Power And M otor S peed Controls Features_ _ • AC and DC o utp ut types. • Component styles • O n-O ff sw itch built in. • Convenient small size 1KW or 2KW ratings.

Contextual Info: M IC R O N I m - n u iN M T12D136 1 MEG X 36, 2 MEG X 18 DRAM M ODULE 1 MEG X 36, 2 MEG X 18 DRAM MODULE NEW I FAST PAGE MODE MT12D136 LOW POWER, EXTENDED REFRESH (MT12D136 L) FEATURES PIN ASSIGNMENT (Top View) OPTIONS 72-Pin SIMM (T-19) MT12D136M/G o MARKING

SN5524

Abstract: logicgate SN5522
Contextual Info: SYSTEMS INTERFACE CIRCUITS SERIES 5520 SENSE AM PLIFIERS B U L L E T I N N O . D L -S 7 3 1 1 7 9 9 , J U L Y 1 9 7 3 F U L L M I L IT A R Y T E M P E R A T U R E R A N G E H IG H -SPEED S EN S E A M P L IF IE R S FO R C O N V E R S IO N O F C O IN C ID E N T -C U R R E N T M E M O R Y R E A D O U T T O S A T U R A T E D D IG IT A L-LO G IC L E V E L S

IC451

Abstract: IC-451 IC-420 IC430 IC421
Contextual Info: T3P T im e ly Test Tool with Probe-pins C a r t r i d g e - t y p e Test C o n t a c t o r T3P T im e ly Test Tool w ith Probe-pins A revolutionary cartridge-type test contactor, T3R features not only high contact reliability but also short lead-time, usability and competitive price.

ELY 1120

Contextual Info: GMM764421OCT/TG-6/7 LG Semicon Co.,Ltd. 4,194,304 W O R D S x 64 BIT CMOS EDO DYNAMIC RAM MODULE Description Features The G M M 7 6 4 4 2 1OCT/TG is an 4M x 64 bits EDO D ynam ic R A M M O D U L E w hich is assem bled 16 pieces o f 4M x 4bit EDO D R A M s in 24 pin T SO P tl package, tw o

NDS8928

Abstract: Dual N-CHANNEL ENHANCEMENT MODE POWER MOSFET 8A Dual N-CHANNEL ENHANCEMENT MODE POWER MOSFET 8A 4 P-channel AND N-Channel power mosfet SO-8 ENHANCEMENT Dual N & P-Channel MOSFET
Contextual Info: July 1996 N N D S8928 Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description Features T hese dual N -a n d P -C hannel en h an c em en t m ode p o w er field effect transistors are produ ced using N ational's proprietary, high cell density, DMOS

Contextual Info: J u ly 1 9 9 6 N NDS8928 Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description Features T hese d u al N -a n d P -C hannel e n h a n c e m e n t m o d e p o w er field effect transistors are prod u ced using N ational's proprietary, high cell density, DMOS

16Oi

Abstract: 30FQ 30FQ030 30FQ030A 30FQ035 30FQ035A 30FQ040 30FQ040A 30FQ-A DO-203AA
Contextual Info: INTERNATIONAL RECTIFIER 4855452 ~BB ^ | M f l S S 4 S E DODSDTl h 55C 0 5 0 9 1 INTERNATIONAL RECTIFIER D Data Sheet No. PD-2.039B INTERNATIONAL RECTIFIER IOR 30FQ & 30FQ-A SERIES 3 0 Amp Schottky Power Rectifiers Description/Features Major Ratings and Characteristics

Contextual Info: FUJITSU M I C R O E L E C T R ON I C S FU JITSU 374ma 23E D E e Ä i6 3 8 4 ^ B I’^ Ä i BIPOLAR,RANDOM^ ES M GOOöSbS 4 M BM 10480A-8 è i ; «• m - % May 1988 Edition 1.0 - r v o s 16384-BIT BIPOLAR ECL RANDOM ACCESS MEMORY The Fujitsu MBM10480A 1$ a fully decoded 16384-blt ECL read/w rite random access

KS0065B

Abstract: 8652 ks00658 KS0065 sc 4145 CI 7425 KS0065b lcd 1414a 142 LTACH KS0066
Contextual Info: KS0065B CMOS DIGITAL INTEGRATED CIRCUIT 40-CHANNEL SEGMENT/COMMON DRIVER FOR DOT MATRIX LCD 60 Q FP The K S 0 0 6 5 B is a L C D driver LSI w hich is fabricated by low power C M O S technology. Bascially this LSI co nsists of 20 x 2bit bidrectional shift register, 20 x 2bit data latch ad 20 x 2 bit driver,