ELY 1035 Search Results

gal20v8qs

Abstract: GAL20V8QS-15LNC GAL20V8S gal programming algorithm GAL20V8QS-10L cs 2648 GAL20V8QS15LMI WGB 03 HL 006 pAL programming Guide GAL20V8QS10LNC
Contextual Info: GAL20V8QS-10L, -15L 24-Pin 0.8ja EECMOS PLDs General Description Features T h e EECM OS G A L20V8Q S devices are fabricated using N atio n a l’s C S80BEV 0.8/x E lectrically E rasable CM O S pro­ cess. This advanced p rocess m akes N ational's G A L20V 8Q S extrem ely la st, allow ing contro lle d output

Contextual Info: HIGH-SPEED BiCMOS ECL STATIC RAM 64K 16Kx 4-BIT PRELIMINARY IDT 100494 FEATURES: DESCRIPTION: • 16,384-w ords x 4 -b it o rg a n iza tio n • A ddress a ccess tim e : 8 /1 0 /1 5n s (max.) • Low p o w e r d issip a tio n : 500m W (typ.) T h e ID T100494 is a 65,536-bit h ig h -sp ee d BiC E M O S ECL

MBM100480

Abstract: 100K series ECL MBM100480-25
Contextual Info: FUJITSU M ICROELECTRONICS. INC. ^ , G^g 0 MBM100480-25 ECL 16,384-BIT BIPOLAR RANDOM ACCESS MEMORY PRELIMINARY DESCRIPTION The Fujitsu MBM100480-25 is a fu lly d e c o d e d 16384-bit ECL read/w rite random access m em ­ ory designed for m ain, control and buffer storage applications.

static ram 64K

Abstract: s1214
Contextual Info: HIG H-SPEED BiCMOS ECL STATIC RAM 64K 64K x 1-BIT Integrated Devk:eTechnology. Inc PRELIMINARY IDT 100490 FEATURES: DESCRIPTION: • 65,536-w ords x 1-bit o rga n izatio n • Low p o w e r d issip a tio n : 320m W (typ.) • Fu lly c o m p a tib le w ith 100K lo g ic level

Contextual Info: SONY CXK5V8257BTM/BYM/BM •70LLX/85LLX*/1 OLLX* 32768-word x 8-bit High Speed CMOS Static RAM * Only TSOP available * * Only SOP available D escription The CXK5V8257BTM/BYM/BM is 262,144 bits high speed CMOS static RAM organized as 32,768 words by 8 bits.

Contextual Info: FUJITSU MICROELECTRONICS F U J IT S U 23E D • 374m2 ECK16384-BIT»*W BIPOLAR RANDOM' G0Gfl27S 7 ■ MBM100480A-8 May 1988 Edition 1.0 " P 4 k -2 .V O S 16384-BIT BIPOLAR ECL RANDOM ACCESS MEMORY The Fujitsu MBM100480A Is a fully decoded 16384-blt ECL read/w rite random access

C819

Abstract: GF032
Contextual Info: F U JIT SU ECL 16384- BI T B I P OL AR R A N D O M ACCESS MEMORY MBM100480A-10 May 1988 Edition 1.0 16384-BIT BIPOLAR ECL RANDOM ACCESS MEMORY The Fujitsu MBM100460A I* a fully decoded 16384-bit ECL read/write random accata m emory daaignad fo r main m emory, control and buffar storage application». This device

Contextual Info: FUJITSU MICROELECTRONICS H3E D • 374T7b2 OOOñl?'! O ■ T - % 'Z 3 - 0 S E G i 4096^ B n Ä i l F U J IT S U BIPOLARI RAN DOI ACCESStMEMORY MBM100470A-7 August 1986 Edition 1.0 4096-BIT BIPOLAR ECL RANDOM ACCESS MEMORY The Fujitsu MBM100470A Is a fully decoded 4096-bit

100422A

Abstract: MBM100422A 100422
Contextual Info: F U JIT S U ECL 1024-BIT BIPOLAR RANDOM ACCESS MEMORY MBM 100422A-5 MBM 100422A-7 A p r il 1987 E d itio n 3.0 1024-BIT BIPOLAR ECL RANDO M ACCESS M EM O RY The Fujitsu MBM 100422A is fu lly decoded 1024-bit ECL read/w rite random access memory designed fo r high-speed scratch pad, control and buffe r storage

3S4 tube

Abstract: 0-12V 74VHC AC ammeter and ct diagram schematic diagram 0-12v power supply
Contextual Info: 54VHC/74VHC4066 Quad Analog Switch General Description Features These devices are digitally controlled analog switches utiliz­ ing advanced silicon-gate CMOS technology. These switches have low "o n ” resistance and low “ off” leakages. They are bidirectional switches, thus any analog input may

100474

Abstract: SY100474 SY101474 Y1047
Contextual Info: * SYNERGY SY 10474-3/4/5/7 S Y 1 00474-3/4/5/7 S Y 101474-3/4/5/7 1K X 4 E C L R A M S E M IC O N D U C T O R FEA TU R E S D E S C R IP T IO N • Address access time, tAA: 3/4/5/7ns max. ■ Chip select access tim e, tAC: 2ns max. ■ Write pulse width, tww: 3ns min.

SY101L484

Contextual Info: TD013Ö1 QDDD07C1 b27 S7E D SYNERGY SEMICONDUCTOR Address access time, tAA: 7/8/1 Ons max. Chip select access time, tAc: 3/4/5ns max. Eliminates write recovery glitch found on competitors’ ECL RAMs Low power supply current, I e e : -180m A min. Designed for alpha particle immunity

100422a-5

Contextual Info: FU JITSU ECL 1024-BIT BIPOLAR RANDOM ACCESS MEMORY MBM 100422A-5 MBM 100422A-7 April 1987 Edition 3.0 1024-BIT B IP O L A R E C L RANDOM A C C ESS M EM ORY The Fu jitsu MBM 100422A is fu lly decoded 1024-bit E C L read/write random access memory designed for high-speed scratch pad, control and buffer storage

A1281

Abstract: KMC SERIES CAPACITORS OZ 9910 a MAX405 MAX405CPA MAX405CSA MAX405EPA MAX405ESA 099-40
Contextual Info: 19-3819; Rev 1; 5/96 Precision Video B uffer A m plifier G eneral Description T he M AX405 is id e a l as a 5 0 ÎÎ a n d 75Î2 co a xia l c a b le d riv e r for co lo r v id e o sig n a ls. G u a ra n te e d 6 0 m A c o n tin u o u s o u tp u t c u rre n t e lim in a te s th e n e e d fo r

Contextual Info: « S Y 1 0422-3/4/5/7 SY1 00422-3/4/5/7 S Y 101422-3/4/5/7 S Y101 M 422-5/7 256 x 4 ECL RAM SYNERGY S E M IC O N D U C T O R F E A TU R E S D E S C R IP TIO N Address access time, 3/4/5/7ns max. tAA: Block select access time, tAB: 2ns max. Write pulse width, tww: 3ns min.

H157D1

Abstract: D1113 A7 NPN EPITAXIAL TRANSISTOR D1113 ECL100K ECL10K Q14000B Q2100B Q6000B Q9100B
Contextual Info: PRELIMINARY DEVICE SPECIFICATION Q14000 SERIES BiCMOS LOGIC ARRAYS DESCRIPTION The AM CC Q14000 Series of BiCM OS logic arrays is com prised of four products with densities of 2160, 5760, 9072 and 13,440 equivalent gates. The series is optimized to provide CMOS densities with b ip ola r perform ance

BECKMAN helipot potentiometer

Abstract: BECKMAN helipot Helipot POTENTIOMETER clarostat POTENTIOMETER TYPE EJ sangamo capacitor type 500 sangamo capacitor Helipot inverter circuit diagram electra helipot 10 turn beckman instruments sangamo "current transformer"
Contextual Info: I N D U S T R I A L AND ANÂLOG N U C L E A R I N S T R U M E N T S COMPUTERS BECKMAN INSTRUMENTS, INC. 22 00 WRI GHT AVE., RI CHMOND, CALIF. TELEPHO N E. LANDSCAPE 6 -773 0 / WARNING Do not attempt to operate this instrument until you have read the Instruction Manual.

reference design tegra 2

Contextual Info: VFC100 B U R R -B R O W N | b b | AVAILABLE IN DIE FORM Synchronized VOLTAGE-TO-FREQUENCY CONVERTER FEATURES DESCRIPTION • F U L L-S C A LE FR EQ U EN C Y SET BY SYSTEM CLOCK. NO CRITICAL EX T ER N A L C OM PONENTS REQUIRED T he VFCIOO v o lta ge-to-freq u en cy converter is an

74ls82

Abstract: 74245 BIDIRECTIONAL BUFFER IC 74ls150 ph 4531 diode 4583 dual schmitt trigger ic D flip flop 7474 74245 BUFFER IC ic 7483 BCD adder data sheet ic 74139 Quad 2 input nand gate cd 4093
Contextual Info: General Features The SCxD4 series of high perform ance CM O S gate arrays offers the user the ability to realise custom ised VLSI inte­ grated circuits featuring the speed perform ance previously obtainable only with bipo lar tech nolog ies whilst retaining all

L1373

Abstract: l1373-4 COP820CJ COP822C
Contextual Info: April 1992 COP820CJMH/COP822CJMH Single-Chip microCMOS Microcontroller Features • Form, fit and function em ulation device for the COP82C CJ/COP822CJ ■ Fully static CMOS ■ 1 f x s instruction time ■ Single supply operation: 4.5V to 6.0V ■ 8191 x 8 on-chip ROM

64 CERAMIC LEADLESS CHIP CARRIER LCC

Abstract: PD3024
Contextual Info: AmPAL*10H20EV8/AmPAL10020EV8 IMOX-III ECL Programmable Array Logic PRELIMINARY • • • • • High-performance tpo = 6 ns, fMAX - 125 MHz Eight user-programmable output logic m acrocells for registered or combinatorial operation A latched version of the d evice is available a s AmP A L1 0 H 2 0 E G 8 or A m P A L I 0 0 2 0 EG 8 se e AMD Publica­

SERVICE MANUAL oki 32 lcd tv

Abstract: 1DC2A hlx crystal USER MANUAL oki 32 lcd tv HPC46004V20 1ale SERVICE MANUAL oki 23 lcd tv 1DC2 USER S MANUAL oki 32 lcd tv Aleph
Contextual Info: JD M %* w jz £9 National ÆÆ Semiconductor H P C 1 6 0 6 4 /2 6 0 6 4 /3 6 0 6 4 /4 6 0 6 4 /1 6 0 0 4 /2 6 0 0 4 / 3 6 0 0 4 /4 6 0 0 4 H ig h-P erfo rm ance m ic ro c o n tro lle r General Description Features The HPC46064 and HPC46004 are m em bers o f the H P C t m

gal 16v8 programming algorithm

Abstract: gal programming algorithm GAL programming Guide GAL16V8QS TAT 2159 opal 16V8A 16V8Q 16V8QS gal programming specification
Contextual Info: Semiconductor GAL16V8QS-10L, -15L 20-Pin 0.8jli EEC M O S PLD s General Description Features Th e EECM OS G AL16V8Q S devices are fabricated using N ational’s CS80BEV 0.8|u. E lectrically Erasable C M O S pro­ cess. This advanced process m akes N ational’s

cd4066 spice model

Abstract: ic cd4066 GE 8111 nimh spice model charge PIN CONFIGURATION IC CD4066 rtl 8111 LMC6582 LMC6582AIM LMC6582AIMX LMC6582AIN
Contextual Info: Semiconductor March 1995 LM C6582 D u al/L M C 65 84 Quad Low V oltage, R ail-To-R ail Input and O utput CMOS O perational A m plifier General Description Features The L M C 6 5 8 2/4 is a high perform ance operational am plifier w hich can operate o ver a w ide range of supply voltages,