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    S1214 Search Results

    S1214 Datasheets (1)

    Syntron
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    S12140
    Syntron Silicon Rectifier Data Book 1971 Scan PDF 81.78KB 2
    SF Impression Pixel

    S1214 Price and Stock

    ABLIC Inc.

    ABLIC Inc. S-1214B50H-E8T1U7

    LDO Regulator Pos 5V 1A 8-Pin HSOP-A Tape
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    Verical S-1214B50H-E8T1U7 800 3
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    Mouser Electronics S-1214B50H-E8T1U7
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    Arrow Electronics S-1214B50H-E8T1U7 Cut Strips 800 12 Weeks 3
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    Onlinecomponents.com S-1214B50H-E8T1U7
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    ABLIC Inc. S-1214B80H-E8T1U7

    LDO Regulator Pos 8V 1A 8-Pin HSOP-A EP Tape
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    Verical S-1214B80H-E8T1U7 100 66
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    Avnet Americas S-1214B80H-E8T1U7 Tape & Reel 16 Weeks 4,000
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    Mouser Electronics S-1214B80H-E8T1U7
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    Onlinecomponents.com S-1214B80H-E8T1U7
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    Quest Components S-1214B80H-E8T1U7 80
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    ABLIC Inc. S-1214B30H-V5T2U7

    LDO Regulator Pos 3V 1A 5-Pin(4+Tab) TO-252-S Tape
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    Verical S-1214B30H-V5T2U7 100 66
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    Mouser Electronics S-1214B30H-V5T2U7
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    Onlinecomponents.com S-1214B30H-V5T2U7
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    Quest Components S-1214B30H-V5T2U7 80
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    ABLIC Inc. S-1214B80H-V5T2U7

    LDO Regulator Pos 8V 1A 5-Pin(4+Tab) TO-252-S Tape
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    Verical S-1214B80H-V5T2U7 75 66
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    Mouser Electronics S-1214B80H-V5T2U7
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    Onlinecomponents.com S-1214B80H-V5T2U7
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    Quest Components S-1214B80H-V5T2U7 60
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    ABLIC Inc. S-1214B00H-V5T2U7

    LDO Regulator Pos 1.8V to 30V 1A 5-Pin(4+Tab) TO-252-S T/R
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    Verical S-1214B00H-V5T2U7 24 3
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    Arrow Electronics S-1214B00H-V5T2U7 Cut Strips 24 12 Weeks 3
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    S1214 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    SIHS36N50D

    Contextual Info: SiHS36N50D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness


    Original
    sihs36n50dsuper-2472011/65/eu2002/95/ec+112-mar-12 PDF

    Contextual Info: DATA SHEET SKY73033: 1700 – 2200 MHz High Gain and Linearity Single Downconversion Mixer for 2G/3G Base Station Applications Applications Description • 2G/3G base station transceivers: − GSM/EDGE, CDMA, UMTS/WCDMA The SKY73033 is a fully integrated single mixer that includes


    Original
    sky73033200635c PDF

    AL102 ATES

    Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
    Contextual Info: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible


    OCR Scan
    trans-611dt15212n2270bc107-182ks+16esc182kasesc182kbsesc1q8-183kseic183kbs8c183kcsbc109-184ksal102 ates2n2222a mpskr206ad149tis58tis88sft3532n24312n4265bfy29 PDF

    200635D

    Abstract: SKY73033-11 s937 S938 SKY73033 S944
    Contextual Info: DATA SHEET SKY73033-11: 1700 – 2200 MHz High Gain and Linearity Single Downconversion Mixer for 2G/3G Base Station Applications Applications Description x 2G/3G base station transceivers:  GSM/EDGE, CDMA, UMTS/WCDMA The SKY73033-11 is a fully integrated single mixer that includes


    Original
    sky73033-11200635ds937s938+2sky73033s944 PDF

    Si4190ADY

    Abstract: si41
    Contextual Info: SPICE Device Model Si4190ADY www.vishay.com Vishay Siliconix N-Channel 100 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached spice model describes the typical electrical characteristics of the N-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original
    si4190ady2011/65/eu2002/95/ec12-mar-12+1si41 PDF

    Contextual Info: SiHG22N50D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness


    Original
    sihg22n50do-247ac2002/95/ec2011/65/eu+2js709a02-oct-12 PDF

    nc 1458

    Abstract: MA 1458 SIHG32N50D-GE3
    Contextual Info: SiHG32N50D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness


    Original
    sihg32n50do-247ac2011/65/eu2002/95/ec+412-mar-12nc 1458ma 1458sihg32n50d-ge3 PDF

    Contextual Info: SiHG22N50D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness


    Original
    sihg22n50do-247ac2011/65/eu2002/95/ec+112-mar-12 PDF

    mosfet 452

    Contextual Info: SiHG22N50D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness


    Original
    sihg22n50do-247ac2002/95/ec2011/65/eu+3js709a02-oct-12mosfet 452 PDF

    HX8369

    Abstract: S1129 Himax 23 PIN TFT MOBILE DISPLAY HX5186-A
    Contextual Info: DOC No. HX8369-A00-DS HX8369-A00 480RGB x 864 dot, 16.7M color, with internal GRAM, TFT Mobile Single Chip Driver Version 02 October, 2010 HX8369-A00 480RGB x 864 dot, 16.7M color, with internal GRAM, TFT Mobile Single Chip Driver List of Contents October, 2010


    Original
    hx8369-a00-dshx8369-a00480rgb285october+5hx8369s1129himax23 pin tft mobile displayhx5186-a PDF

    Contextual Info: IRFR214, IRFU214, SiHFR214, SiHFU214 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 250 RDS(on) () VGS = 10 V 2.0 Qg (Max.) (nC) 8.2 Qgs (nC) 1.8 Qgd (nC) 4.5 Configuration Single D DPAK (TO-252)


    Original
    irfr214irfu214sihfr214sihfu214+2o-252o-251 PDF

    nc 1458 p1

    Contextual Info: SiHG32N50D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness


    Original
    sihg32n50do-247ac2011/65/eu2002/95/ec+212-mar-12nc 1458 p1 PDF

    ADS1215

    Abstract: S1214
    Contextual Info: For Immediate Assistance, Contact Your Local Salesperson B U R R -B R O W N S E S1214 ADS1215 1 P A T E N T S PEN D IN G www.burr-brown.com/databook/S1214.html 22-Bit ANALOG-TO-DIGITAL CONVERTER FEATURES DESCRIPTION • D ELTA-SIGM A A/D CO N V ERT ER


    OCR Scan
    ads1214ads1215com/databook/ads121422-bit+41000hz320mvs121424-bit PDF

    SIHFR214TR

    Contextual Info: IRFR214, IRFU214, SiHFR214, SiHFU214 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 250 RDS(on) () VGS = 10 V 2.0 Qg (Max.) (nC) 8.2 Qgs (nC) 1.8 Qgd (nC) 4.5 Configuration Single D DPAK (TO-252)


    Original
    irfr214irfu214sihfr214sihfu214+3o-252o-251sihfr214tr PDF

    Contextual Info: DATA SHEET SKY73033-11: 1700 – 2200 MHz High Gain and Linearity Single Downconversion Mixer for 2G/3G Base Station Applications Applications Description x 2G/3G base station transceivers:  GSM/EDGE, CDMA, UMTS/WCDMA The SKY73033-11 is a fully integrated single mixer that includes


    Original
    sky73033-11200635d PDF

    Contextual Info: SiHS36N50D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness


    Original
    sihs36n50dsuper-2472011/65/eu2002/95/ec+112-mar-12 PDF

    Contextual Info: SiHS36N50D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness


    Original
    sihs36n50dsuper-2472002/95/ec2011/65/eu+2js709a02-oct-12 PDF

    Contextual Info: SiHG32N50D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness


    Original
    sihg32n50do-247ac2002/95/ec2011/65/eu+2js709a02-oct-12 PDF