EJ TRANSISTOR MARKING Search Results

transistor marking bh ra

Abstract: 2SA1641
Contextual Info: S A N Y O S E M I C O N D U C T O R CORP SHE D 7 eJ‘ì707b 000-7140 4 2SA1641 T- 31-IS PNP Epitaxial Planar Silicon Transistor 2044 High-Current Switching Applications I2326A F eatures . Adoption of FBET, MBIT processes. • Low saturation voltage. • F ast switching speed.

STK and STR integrated circuits

Abstract: transistor smd zG 1e STR-Z4579 Turuta 6 pin TRANSISTOR SMD CODE PA transistor 5d smd ELM85361A STK and STR integrated circuits, 2011 edition 5g smd transistor 15D diode smd code
Contextual Info: SMD-codes DATABOOK Active SMD semiconductor components marking codes • 235.000 SMD-codes for active semiconductor components: • Diodes, Transistors, Thyristors, Integrated Circuits • Case pin assignment • Pinout • Marking style • Schematic diagram

TLE4254EJ

Abstract: 4254EJA TLE4254 TLE4254GA TC17xx TLE6368 TLE 4254GS TLE4254GS TLE4271 TLE4254EJS
Contextual Info: High Accuracy Low Dropout Voltage Tracking Regulator 1 TLE4254 Overview Features • • • • • • • • • • • • • • • • 70 mA output current capability Very tight output tracking tolerance to reference Output voltage adjustable down to 2.0 V

h7d marking

Contextual Info: IPA50R140CP CoolMOSTM Power Transistor Product Summary Features W฀4EHB:M?:;฀8;IJ฀/ =L"a`#฀?D฀1, W฀ EM;IJ฀<?=KH;฀E<฀C;H?J฀/,+฀N฀.Y V !0฀8M\_Sj .) O R =L"a`#%_Sj )'*-)  -1 `< Q Y%fkb W฀2BJH7฀BEM฀=7J;฀9>7H=; W฀"NJH;C;฀:L :J฀H7J;:

MMBTA06

Abstract: MPSA05 Transistor driver TRANSISTOR MARKING FA
Contextual Info: SAMSUNG SEMICONDUCTOR INC MMBTA06 14E D | 7 c! b 4 1 4 a 0007531 fi | NPN EPITAXIAL SILICON TRANSISTOR DRIVER TRANSISTOR ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Symbol Collector-Base Voltage Collector-Ennitter Voltage Emitter-Base Voltage Collector Current

EJ transistor marking sot23

Abstract: EJ transistor marking transistor mark code HF
Contextual Info: KST42/43 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS TA=25t: Sym bol C haracteristic Collector Base Voltage Rating U nit 300 200 V V Vebo lc Pc T sto 300 200 6 500 350 150 V V V mA mW t: RtH(J-A) 357 tl/w VcBO

7H diode

Abstract: IPA50R140CP DIODE marking ED X9 diode marking BEM LM7m
Contextual Info: IPA50R140CP CoolMOSTM Power Transistor Product Summary Features W 4 EHB: M ?: ; 8;IJ/ =L"a`# ?D 1,   W EM ;IJ<?=KH; E<C ;H?J/ , + N . Y V !0 8M\_Sj .) O R =L"a`#%_Sj )'*-) " -1 `< Q Y%fkb W 2 BJH7 BEM =7J ; 9>7H=; W " NJH;C ; : L : JH7J;: W % ?=> F;7A 9KHH;DJ97F78?B?JO

transistor marking code 43

Abstract: KST42 KST43
Contextual Info: NPN EPITAXIAL SILICON TRANSISTOR KST42/43 HIGH VOLTAGE TRANSISTOR S O T-23 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol C ollector Base Voltage Rating Unit 300 200 V 300 200 6 500 350 150 V V V mA mW °C 357 °C /W VcBO : KST42 : KST43 C ollector-E m itter Voltage

Contextual Info: SAMSUNG SEMICONDUCTOR INC MMBTA13 l^ E 00 072c10 4 | O J NPN EPITAXIAL SILICON TRANSISTOR _ L DARLINGTON AMPLIFIER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage

s791

Abstract: transistor B 722
Contextual Info: TELEFUNKEN ELECTRONIC T lt U M IM iN l electronic filC D • ÛTBÜG^b 0005437 *3 X -J/-/ r S 79! T Creativo Technotogìes Silicon NPN Planar RF Transistor Applications: RF-amplifier up to GHz range specially for wide band antenna amplifier Feature*: • High power gain

Contextual Info: SA M S U N G SEMICO NDU CTOR INC MMBTA06 14E D | iTbMlMa □0 07281 fi | NPN EPITAXIAL SILICON TRANSISTOR > -A R -IS DRIVER TRANSISTOR ABSOLUTE MAXIMUM RATINGS Ta= 2 5 °C Characteristic Symbol Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage

Contextual Info: ADVANCE I^ICZRO N M T52C 9042 FIFO 4K x 9 FIFO VARIABLE FLAGS FEATURES PIN ASSIGNMENT Top View High speed: 25ns access, 35ns cycle time Asynchronousand simultaneous READ and WRITE Empty and Full Flags Automatic retransmit Transistor loads for maximum data integrity

MT52C9041

Abstract: D728
Contextual Info: ADVANCE MICRON MT52C9041 FIFO 4Kx 9 FIFO MAILBOX REGISTER FEATURES • • • • • • • PIN ASSIGNMENT (Top View High speed: 25ns access, 35ns cycle time Asynchronous and simultaneous READ and WRITE Empty and Full Flags Automatic retransmit Transistor loads for maximum data integrity

BFY88

Abstract: Telefunken u 237 transistor marking code 2C BFY 88 telefunken C80 ui77 silicon npn planar rf transistor sot 143 IMB 06 C BFY 52 transistor 95288
Contextual Info: TELEFUNKEN ELECTRONIC m ilp y M IM electronic Ö1C D • fi^SOQRb 0005332 b 'T- BFY 88 Creative Technologies Silicon NPN Epitaxial Planar RF Transistor Applications: VHF amplifier stages, pre-stages In common emitter configuration Oscillating mixer stages in common base configuration

FX-300

Abstract: MMST3904 MMST3906
Contextual Info: MMST3904 TRANSYS ELECTRONICS LIMITED NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction Complementary PNP Type Available MMST3906 Ultra-Small Surface Mount Package SOT-323 -H M [cl TO P V IE W Mechanical Data_

sot-23 marking k3m

Abstract: MMBTA42 MMBTA92
Contextual Info: TRANSYS MMBTA42 ELECTRONICS NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR LIMITED Features Epitaxial Planar Die Construction Complementary PNP Type Available MMBTA92 Ideal for Medium Power Amplification and Switching SOT-23 -H M Dim Min Max [cl A 0.37 0.51 B

SOT-23 2D

Abstract: MMBTA42 MMBTA92 sot-23 marking k3r marking K3R
Contextual Info: TRANSYS ELECTRONICS LIMITED MMBTA92 PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction Complementary NPN Type Available MMBTA42 Ideal for Medium Power Amplification and Switching SOT-23 -H M Dim Min Max [cl A 0.37 0.51 B

MMBT6427

Contextual Info: ÏR A N S Y S MMBT6427 ELECTRONICS NPN SURFACE MOUNT DARLINGTON TRANSISTOR LIMITED Features Epitaxial Planar Die Construction Ideal for Medium Power Amplification and Switching High Current Gain SOT-23 -H M [cl TOP VIEW Mechanical Data_ Case: SOT-23, Molded Plastic

Contextual Info: ADVANCE I^ IC Z R O N MT52C9011 1K x 9 FIFO FIFO MAILBOX REGISTER FEATURES PIN ASSIGNMENT Top View High speed: 25ns access, 35ns cycle time Asynchronous and simultaneous READ and WRITE Empty and Full Flags Automatic retransmit Transistor loads for maximum data integrity

Q807

Contextual Info: ADVANCE MICRON MT52C9021 2K x 9 FIFO FIFO MAILBOX REGISTER FEATURES • • • • • • • PIN ASSIGNMENT (Top View High speed: 25ns access, 35ns cycle time Asynchronous and simultaneous READ and WRITE Empty and Full Flags Automatic retransmit Transistor loads for maximum data integrity

2SK1078

Abstract: 2SK107
Contextual Info: TOSHIBA Discrete Semiconductors 2SK1078 Field Effect Transistor Silicon N Channel MOSType L2-7t-MOS III High Speed, High Current DC-DC Converter, Relay Drive and Motor Drive Applications Features • 4-Volt Gate Drive • Low Drain-Source ON Resistance - R iDS(ON) = 0.4Í2 (Typ.)

LC 300-S

Abstract: MMBT5401 MMBT5551
Contextual Info: ÏR A N S Y S MMBT5551 ELECTRONICS LIMITED NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction Complementary PNP Type Available MMBT5401 Ideal for Medium Power Amplification and Switching SOT-23 -H M Dim Min Max [cl A 0.37

LC 300-S

Abstract: MMBT5401 MMBT5551
Contextual Info: ÍRANSYS ELECTRONICS LIMITED MMBT5401 PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction Complementary NPN Type Available MMBT5551 Ideal for Medium Power Amplification and Switching -H M [cl TOP VIEW Mechanical Data_

R1A SURFACE MOUNT TRANSISTOR

Abstract: transistor marking 1am R1A Marking npn marking 1am MMBT3904 MMBT3906 K1N TRANSISTOR transistor sot23 1am FX-300
Contextual Info: MMBT3904 ÏR A N S Y S ELECTRONICS LIMITED NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction Complementary PNP Type Available MMBT3906 Ideal for Medium Power Amplification and Switching SOT-23 -H M Dim Min Max [cl A 0.37