EHM07 Search Results

a3 sot143

Abstract: BAR60 BAR61 VPS05178 MARKING 61s
Contextual Info: BAR60, BAR61 Silicon PIN Diodes 3
RF switch, RF attenuator for frequencies above 10 MHz 4 2 BAR60 BAR61 1 1 3 4 1 VPS05178 3 EHA07013 2 4 EHA07014 2 Type Marking Pin Configuration Package BAR60 60s 1=C1/A2/C3 2 = C2 3 = A3 4 = A1 SOT143 BAR61 61s 1=C2/C3

Bb515

Abstract: bf999
Contextual Info: BF 999 Silicon N-Channel MOSFET Triode 3
For high-frequency stages up to 300 MHz preferably in FM applications 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BF 999 LBs Pin Configuration 1=G 2=D Package

cmy 17

Abstract: CMY90 RF CIRCUIT DIAGRAM mobile pcb CIRCUIT DIAGRAM
Contextual Info: S IE M E N S G a A s M M IC CM Y90 P re lim in a ry Data • GaAs mixer with integrated pre and IF amplifier • For frequencies from 400 MHz to 2.5 GHz • Mixer for mobile communication applications in handheld equipment • Low power, 2.5 mA operating current

BAR14-1

Contextual Info: BAR14-1 / BAR15-1 / BAR16-1 / BAR61. Silicon PIN Diode • RF switch, RF attenuator for frequencies above 10 MHz • Low distortion faktor • Long-term stability of electrical characteristics BAR14-1 BAR15-1 3 BAR16-1 3 BAR61 4 3 3 D 1 D 1 D 2 D 1 1 2 1

BF999

Contextual Info: BF999 Silicon N-Channel MOSFET Triode 3
For high-frequency stages up to 300 MHz preferably in FM applications 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BF999 LBs Pin Configuration 1=G 2=D Package

BAR16-1

Contextual Info: BAR1./BAR61. Silicon PIN Diode • RF switch, RF attenuator for frequencies above 10 MHz • Low distortion faktor • Long-term stability of electrical characteristics • Pb-free RoHS compliant package • Qualified according AEC Q101 BAR14-1 BAR15-1

marking 54 dbm mmic

Abstract: mobile pcb CIRCUIT DIAGRAM
Contextual Info: SIEMENS GaAs MMIC CMY 90 Preliminary Data • GaAs mixer with integrated pre and IF amplifier • For frequencies from 400 MHz to 2.5 GHz • Mixer for mobile communication applications in handheld equipment • Low power, 2.5 mA operating current • Operating voltage range: 3 to 6 V

marking code L7S

Abstract: BAR14-1 BAR15-1 BAR16-1 BAR61 BCW66 BFP181 marking L8s
Contextual Info: BAR1. / BAR61. Silicon PIN Diode • RF switch, RF attenuator for frequencies above 10 MHz • Low distortion faktor • Long-term stability of electrical characteristics BAR14-1 BAR15-1 ! BAR16-1 ! BAR61 " ! ! ,  ,  ,  ,  ,  Type BAR14-1 BAR15-1

BF961

Contextual Info: SIEM ENS Silicon N Channel MOSFET Tetrode BF961 • For input and mixer stages in FM and VHF TV tuners Type Marking Ordering Code BF 961 - Q62702-F518 Pin Configuration 2 1 3 4 S D Gz Package1 Gì X-plast Maximum Ratings Parameter Symbol Values Unit Drain-source voltage

Contextual Info: SIEMENS Silicon N Channel MOSFET Tetrode BF 964 S • For VHF applications, especially for input and mixer stages with a wide tuning range, e.g. in CATV tuners Type Marking Ordering Code BF 964 S - Q62702-F446 Pin Configuration 1 2 3 4 S D Gz Package1 Gì

bf987

Contextual Info: SIEMENS Silicon N Channel MOSFET Triode BF 987 • For high-frequency stages up to 300 MHz, preferably in FM applications • High overload capability Type Marking Ordering Code BF 987 - Q62702-F35 Pin Configuration 1 2 3 D S Package1 G TO-92 Maximum Ratings

Contextual Info: S IE M E N S Silicon N Channel MOS FET Triode BF 543 Preliminary Data • For RF stages up to 300 MHz preferably in FM applications • /dss = 4 mA, g is = 12 mS ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code

bb515

Abstract: BF999
Contextual Info: BF999 Silicon N-Channel MOSFET Triode 3
For high-frequency stages up to 300 MHz preferably in FM applications 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BF999 Marking LDs 1=G Pin Configuration 2=D 3=S Package

Contextual Info: SIEM ENS BF 988 Silicon N Channel MOSFET Tetrode • Short-channel transistor with high S/C quality factor • For low-noise, gain-controlled input stages up to 1 GHz Type Marking Ordering Code BF 988 - Q62702-F36 Pin Configuration 2 4 1 3 S D Û2 Package1

Contextual Info: BAR1./BAR61. Silicon PIN Diode • RF switch, RF attenuator for frequencies above 10 MHz • Low distortion faktor • Long-term stability of electrical characteristics • Pb-free RoHS compliant package • Qualified according AEC Q101 BAR14-1 BAR15-1

bf544

Abstract: siemens fet to92 700M
Contextual Info: SIEMENS BF 544 Silicon N Channel MOS FET Triode Preliminary Data • For RF stages up to 300 MHz preferably in FM applications • / dss= 4 mA, g ts = 12 mS ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code

BF993

Abstract: KDS 1M marking MTs g1625 I00MH Silicon N Channel MOSFET Tetrode t 993 d
Contextual Info: SIEM ENS BF 993 Silicon N Channel MOSFET Tetrode For high-gain, low-distortion VH F TV and FM mixer and input stages Type Marking Ordering Code tape and reel B F 993 ME Q62702-F1018 Pin Configuration 4 1 2 3 S D G2 Package1) Gì SOT-143 Maximum Ratings Parameter

BAR14-1

Contextual Info: BAR14-1 / BAR15-1 / BAR16-1 / BAR61. Silicon PIN Diode • RF switch, RF attenuator for frequencies above 10 MHz • Low distortion faktor • Long-term stability of electrical characteristics BAR14-1 BAR15-1 3 BAR16-1 3 BAR61 4 3 3 D 1 D 1 D 2 D 1 1 2 1

a3 sot143

Abstract: BAR60 BAR61 VPS05178 BC238 EHM07026 EHA07013
Contextual Info: BAR 60, BAR 61 Silicon PIN Diodes 3 • RF switch, RF attenuator for frequencies above 10 MHz 4 BAR 60 2 BAR 61 1 1 3 4 1 VPS05178 3 EHA07013 2 4 EHA07014 2 Type Marking Pin Configuration Package BAR 60 60s 1=C1/A2/C3 2 = C2 3 = A3 4 = A1 SOT-143 BAR 61 61s

marking L7s

Abstract: marking L7s diode BAR14-1
Contextual Info: BAR14-1 / BAR15-1 / BAR16-1 / BAR61. Silicon PIN Diode
RF switch, RF attenuator for frequencies above 10 MHz
Low distortion faktor
Long-term stability of electrical characteristics BAR14-1 BAR15-1 3 BAR16-1 3 BAR61 4 3 3 D 1 D 1 D 2 D 1 1 2 1 D 2 2

BAR61

Abstract: BAR14-1 l8s 15 BAR15-1 BAR16-1 marking L8s marking L7s diode
Contextual Info: BAR14-1 / BAR15-1 / BAR16-1 / BAR61. Silicon PIN Diode
RF switch, RF attenuator for frequencies above 10 MHz
Low distortion faktor
Long-term stability of electrical characteristics BAR14-1 BAR15-1 3 BAR16-1 3 BAR61 4 3 3 D 1 D 1 D 2 D 1 1 2 1 D 2 2

BB515

Abstract: BF999
Contextual Info: BF999 Silicon N-Channel MOSFET Triode 3
For high-frequency stages up to 300 MHz preferably in FM applications 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BF999 LBs Pin Configuration 1=G 2=D Package

BF963

Abstract: SIEMENS marking siemens MOSFET bf 434 BB515 D270K BF 963
Contextual Info: SIEMENS Silicon N Channel MOSFET Tetrode BF 963 • For high-gain, low-distortion VHF TV and FM mixer and input stages Type Marking Ordering Code BF 963 - Q62702-F904 Pin Configuration 1 2 4 3 S D G2 Package1 Gì X-plast Maximum Ratings Parameter Symbol Values

BF965

Contextual Info: SIEM ENS BF 965 Silicon N Channel MOSFET Tetrode • Integrated suppression network against spurious VHF oscillations • For VHF applications, especially in TV tuners with extended VHF band, e.g. CATV tuners Type Marking Ordering Code BF 965 - Q62702-F660