EDRAM NEC Search Results

UX7LSeD

Abstract: 180NM nmos NEC 180NM CMOS edram nec 180NM edram cmos logic 90nm 0.35uM STI 180NM NEC NEC SRAM
Contextual Info: DRAM混載技術のご紹介 2007年10月16日 NECエレクトロニクス株式会社 ARM Forum 2007発表資料 Copyright NEC Electronics Corporation Agenda z eDRAM導入のメリット z ＮＥＣエレクトロニクス eDRAMの紹介 z ＮＥＣエレクトロニクス eDRAMの特長

UX7LSeD

Abstract: edram edram macro hfo2 edram nec Ta2O5 55nm
Contextual Info: 55-nanometer eDRAM Technology Optimizes Performance and Power Characteristics Technology Backgrounder September 2006 The industry’s first embedded DRAM eDRAM for the 55-nanometer (nm) technology node uses new materials configured in an innovative way to achieve the performance and power

edram

Contextual Info: r^pM TRO N This application note is a collection of design suggestions based upon common errors made during the development of EDRAM systems. Inttialaation To assure reliable operation of the EDRAM, please initialize promptly on power-up. This initialization requires eight /F refresh

dram verilog model

Abstract: "embedded dram" 438B TC260 TC280 TC280C TOSHIBA TC260 70409 "embedded dram" and Graphics and Toshiba
Contextual Info: Embedded DRAM Cores PRODUCT GUIDE Embedded DRAM Cores With high memory data transfer rates and low power consumption, EDRAM SoCs Enable High-Performance and High-Value-Added Systems. EDRAM SoCs Also Reduce System Board Area. -SoCs with Synchronous DRAMs and FastThe ever-increasing design complexity and the drive for system-on-chips

Contextual Info: Enhanced Memory Systems Inc. DM512K32SmM512K36STBMultibankEDO 512Kbx 32/512Kbx 36 EDRAM SIMM Product Specification Features Architecture • 4KByte SRAM Cache Memory for 12ns Random Reads Within Four Actives Pages Multibank Cache ■ Fast DRAM Array for 30ns Access to Any New Page

Contextual Info: «5 Enhanced Memory Systems Inc. DM2240Multibank EDO EDRAM 4Mb x 1 Enhanced Dynamic RAM ProductSpecification Features • 8Kbit SRAM Cache Memory for 12ns Random Reads Within Four Active Pages Multibank Cache ■ Fast 4Mbit DRAM Array for 30ns Access to Any New Page

Contextual Info: DM2203/2213 Multibank EDO EDRAM 512Kb x 8 Enhanced Dynamic RAM Enhanced Memory Systems Inc. Product Specification Features 8Kbit SRAM Cache Memory for 12ns Random Reads Within Four Active Pages Multibank Cache • Fast 4Mbit DRAM Array for 30ns Access to Any New Page

A09t

Abstract: CQX 89
Contextual Info: DM2223/2233 Multibank Burst EDO EDRAM 512Kb x 8 Enhanced Dynamic RAM Enhanced Memory Systems Inc. Product Specification Features 8Kbit SRAM Cache Memory for 12ns Random Reads Within Four Active Pages Multibank Cache • Fast 4Mbit DRAM Array for 30ns Access to Any New Page

gigabyte 945

Abstract: D0-35 30 pin 9-bit simm memory
Contextual Info: Enhanced Memory Systems Inc. Features DM512K32ST6/DM512K36ST6 Multibank EDO 512Kb x 32/512Kb x 36 EDRAM SIMM Product Specification Architecture The DM512K36ST6 achieves 512K x 36 density by mounting five 512K x 8 EDRAMs, packaged in 44-pin plastic TSOP-II packages, on a

Contextual Info: Enhanced IVfemoiy Systems Inc. DM512K32ST6/DM512K36ST6 Multibank EDO 512Kb x 32/512Kb x 36 EDRAM SIMM Product Specification Features Architecture • 4KByte SRAM Cache Memory for 12ns Random Reads Within Four stive s Pages Multibank Cache ■ Fast DRAM Array for 30ns Access to Any New Page

U1615

Abstract: u1515 U24A U20-16 U217 U1613 U23C-36 U16-18 U17-16 transistor BMO 123
Contextual Info: DM1M64DT6/DM1M72DT6 Multibank EDO EDRAM 1Mb x 64/1Mb x 72 Enhanced DRAM DIMM Enhanced Memory Systems Inc. Product Specification Features 16Kbytes SRAM Cache Memory for 12ns Random Reads Within Eight Active Pages Multibank Cache • Fast 8Mbyte DRAM Array for 30ns Access to Any New Page

Contextual Info: DM2242/2252 EDRAM Multibank EDO 1Mb x 4 Enhanced Dynamic RAM P55Enhanced Æ È IVfemoiySystems ix. Product Specification Features •8Kbit SRAM Cache Memory for 12ns Random Reads Within Four Active Pages Mu iti bank Cache ■Fast 4Mbit DRAM Array for 30ns Access to Any New Page

D0-35

Contextual Info: DM512K32ST/DM512K36ST 512Kb x 32/512Kb x 36 EDRAM SIMM Enhanced Memory Systems Inc. Product Specification Features Architecture The DM512K36ST achieves 512K x 36 density by mounting five 512K x 8 EDRAMs, packaged in 44-pin plastic TSOP-II packages, on a multi-layer substrate. Four

ESI 2160

Abstract: u332 U11B2 cqx 87 u918
Contextual Info: Enhanced Memory Systems Inc. DM512K64DÎ6/DM512K720T6MultibankEDO EDRAM 512Kb x6 4 /5 m x 72 EnhancedDRAM D m Product Specification Features • 8 Kbytes SRAM Cache Memory for 12ns Random Reads Within Four Active Pages Multibank Cache ■ Fast 4Mbyte DRAM Array for 30ns Access to Any New Page

CQX 86

Abstract: U832 write-verify RaR8 81 u218 A09T
Contextual Info: DM512K64DTE/DM512K72DTE Multibank Burst EDO EDRAM 512Kb x 64/512Kb x 72 Enhanced DRAM DIMM Enhanced Memory Systems Inc. Product Specification Features 8Kbytes SRAM Cache Memory for 12ns Random Reads Within Four Active Pages Multibank Cache • Fast 4Mbyte DRAM Array for 30ns Access to Any New Page

edram

Contextual Info: Estimating EDRAM Operating Power ^ M T T R O fM random read current with CMOS operating levels is shown in Figure itroduction I I I k formula for estimating current is nns/opcraling cvcle time * I he Rainlron enhanced DRAM rii 'ihnu"- ini' linn lions ot a Iasi

486dx isa bios opti

Abstract: 495SLC cyrix 486 486DX2 FPGA Cache Controller for the 486DX 486DX2s instructions 486DX2 486DX MEMORY CONTROLLER Intel486DX2 ifx780
Contextual Info: r^ p M lR O N Summary Ramtron’s EDRAM is the ideal memory for high performance PC systems. • No Wait States During Burst Read Hit and Write Cycles ■ Only One Wait State During a Burst Read Miss Cycle ■ Single Chip FPGA-based Controller Solution Introduction

CQX 86

Abstract: U1615 U2-14 U217 u416 CQX 89 CQv 89 512kx8 dram simm u332 u1515
Contextual Info: DM1M64DTE/DM1M72DTE Multibank Burst EDO EDRAM 1Mb x 64/1Mb x 72 Enhanced DRAM DIMM Enhanced Memory Systems Inc. Product Specification Features 16Kbytes SRAM Cache Memory for 12ns Random Reads Within Eight Active Pages Multibank Cache • Fast 8Mbyte DRAM Array for 30ns Access to Any New Page

Contextual Info: Enhanced IVfemoiySuterns be. DM512K64DT6/DM512K72DT6 Multibank EDO EDRAM 512Kb x 64/512Kb x 12 Enhanced DRAM DIMM Product Specification Features • 8 Kbytes SRAM Cache Memory for 12ns Random Reads Within Four Active Pages Multi bank Cache ■ Fast 4Mbyte DRAM Array for 30ns Access to Any New Page

Contextual Info: H Enhanced DM2200 EDRAM 4Mb x 1 Enhanced Dynamic RAM IVfemoiy Suterns be. Product Specification Features • 2Kbit SRAM Cache Memory for 12ns Random Reads Within a Page ■ Fast 4Mbit DRAM Array for 30ns Access to Any New Page ■ Write Posting Register for 12ns Random Writes and Burst Writes

Contextual Info: DM2200 EDRAM 4Mb x 1 Enhanced Dynamic RAM Enhanced Memory Systems Inc. Product Specification Features • ■ ■ 2Kbit SRAM Cache Memory for 12ns Random Reads Within a Page Fast 4Mbit DRAM Array for 30ns Access to Any New Page Write Posting Register for 12ns Random Writes and Burst Writes

Contextual Info: Enhanced IVfemoiy Systems be. DM512K32ST/DM512K36ST 512Kb x 32/512Kb x 36 EDRAM SIMM Product Specification Features A rchitecture • 4KByte SRAM Cache Memory for 12ns Random Reads Within Four s tiv e s Pages Multibank Cache ■ Fast DRAM Array for 30ns Access to Any New Page

U10A-14

Abstract: U11A-8 CQX 86 512kx8 dram simm cqx 87 u12A U11C U832 U12A-14 u318
Contextual Info: DM512K64DT6/DM512K72DT6 Multibank EDO EDRAM 512Kb x 64/512Kb x 72 Enhanced DRAM DIMM Enhanced Memory Systems Inc. Product Specification Features • 8Kbytes SRAM Cache Memory for 12ns Random Reads Within Four Active Pages Multibank Cache ■ Fast 4Mbyte DRAM Array for 30ns Access to Any New Page

PJ 52

Abstract: U1615 U18-18 u1515 U23D-43 U176 U21-18 u1818 L115 U218
Contextual Info: Enhanced Memory Systems Inc. DM1M64DT6/DM1M72DT6 Multibank EOO EDRAM 1Mb x fflM b x 72 Enhanced DRAM DIMM Product Specification Features • l 6Kbytes SRAM Cache Memory for 12ns Random Reads Within Eight Active Pages Multibank Cache ■ Fast 8Mbyte DRAM Array for 30ns Access to Any New Page