EDRAM NEC Search Results

UX7LSeD

Abstract: 180NM nmos NEC 180NM CMOS edram nec 180NM edram cmos logic 90nm 0.35uM STI 180NM NEC NEC SRAM
Contextual Info: DRAM混載技術のご紹介 2007年10月16日 NECエレクトロニクス株式会社 ARM Forum 2007発表資料 Copyright NEC Electronics Corporation Agenda z eDRAM導入のメリット z ＮＥＣエレクトロニクス eDRAMの紹介 z ＮＥＣエレクトロニクス eDRAMの特長

Contextual Info: «5 Enhanced Memory Systems Inc. DM2240Multibank EDO EDRAM 4Mb x 1 Enhanced Dynamic RAM ProductSpecification Features • 8Kbit SRAM Cache Memory for 12ns Random Reads Within Four Active Pages Multibank Cache ■ Fast 4Mbit DRAM Array for 30ns Access to Any New Page

Contextual Info: Enhanced IVfemoiy Systems Inc. DM512K32ST6/DM512K36ST6 Multibank EDO 512Kb x 32/512Kb x 36 EDRAM SIMM Product Specification Features Architecture • 4KByte SRAM Cache Memory for 12ns Random Reads Within Four stive s Pages Multibank Cache ■ Fast DRAM Array for 30ns Access to Any New Page

Contextual Info: DM2242/2252 EDRAM Multibank EDO 1Mb x 4 Enhanced Dynamic RAM P55Enhanced Æ È IVfemoiySystems ix. Product Specification Features •8Kbit SRAM Cache Memory for 12ns Random Reads Within Four Active Pages Mu iti bank Cache ■Fast 4Mbit DRAM Array for 30ns Access to Any New Page

Contextual Info: H Enhanced DM2200 EDRAM 4Mb x 1 Enhanced Dynamic RAM IVfemoiy Suterns be. Product Specification Features • 2Kbit SRAM Cache Memory for 12ns Random Reads Within a Page ■ Fast 4Mbit DRAM Array for 30ns Access to Any New Page ■ Write Posting Register for 12ns Random Writes and Burst Writes

Contextual Info: Enhanced IVfemoiy Systems be. DM512K32ST/DM512K36ST 512Kb x 32/512Kb x 36 EDRAM SIMM Product Specification Features A rchitecture • 4KByte SRAM Cache Memory for 12ns Random Reads Within Four s tiv e s Pages Multibank Cache ■ Fast DRAM Array for 30ns Access to Any New Page

Contextual Info: HHE p n h a n p p H V i l DM2240 M ultibsnk EDO EDRAM 4Mbx 1 Enhanced Dynamic RAM Product Specification Features • 8Kbit SRAM Cache Memory for 12ns Random Reads Within Four Active Pages Mu iti bank Cache ■ Fast 4Mbit DRAM Array for 30ns Access to Any New Page

Contextual Info: p v F n h a n r pH dm2202/2212 edram V 1Mb x 4 Enhanced tynamic RAM i l Product Specification Features • 2Kbit SRAM Cache Memory for 12ns Random Reads Within a Page ■ Fast 4Mbit DRAM Array for 30ns Access to Any New Page ■ Write Posting Register for 12ns Random Writes and Burst Writes

TMS320C31

Abstract: 26V12 PAL26V12 edram tDH31
Contextual Info: EDRAMtMemory Controller for the TMS320C31 DSP Application Report 1998 Digital Signal Processor Solutions Printed in U.S.A., January 1998 SPRA172 EDRAMtMemory Controller for the TMS320C31 DSP Enhanced Memory Systems 1850 Ramtron Drive, Colorado Springs, CO 80921

DM2202J15

Abstract: Ramtron DM2202J15 DM2202J-15 write-verify
Contextual Info: M M F n h ^ n rp ri ^1 DM22022212edram 1Mbx 4 EnhancedDynamic RAM *7 ? Memory Systems Inc. J J Product Specification Features • 2Kbit SRAM Cache Memory for 15ns Random Reads Within a Page ■ Fast 4Mbit DRAM Array for 35ns Access to Any New Page ■ Write Posting Register for 15ns Random Writes and Burst Writes

Contextual Info: Enhanced H I V f e m o iy S y s t e m s In c . DM4M32SJ6 M ultibank EDO 4Mb x 32 Enhanced DRAM SIMM Product Specification Features A rchitecture • Four Integrated 2,048 x 32 SRAM Cache Row Registers Allows 12ns Random Reads Within 4 Active Pages Multibank Cache

write-verify

Abstract: DM2200J
Contextual Info: par Enhanced K l MemoiySystemsInc. DM 2200edram 4Ubx1GlancedDynamicRAM Product Specification Features • 2Kbit SRAM Cache Memory for 15ns Random Reads Within a Page ■ Interleave SRAM Cache for 8ns Burst Read ■ Fast 4Mbit DRAM Array for 35ns Access to Any New Page

A838A

Contextual Info: ^007547 00Q0Q45 E C n h l l l i a n a i ^ l U A i U U l D M 2 2 0 3 / 2 2 1 3 5 1 2 K b x 8 M u lt i b a n k E n h a n c e d D bS; E D y n a m O E D ic R A R A M M PrelminaryDatasheet Memory Systems Inc. Features • 8Kbit SRAM Cache Memory for 15ns Random Reads Within Four

Contextual Info: Enhanced IV f e m o iy S y s t e m s DM2M36SJ/DM2M32SJ 2Mbx36/2Mbx32 Enhanced DRAM SIMM In c . Product Specification Features A rchitecture The DM2M36SJ • 4KByte SRAM Cache Memory for 12ns Random Reads Within Two Active Cache Pages ■ Fast DRAM Array for 30ns A sess to Any New Page

IBM025161LG5D60

Abstract: gm72v16821 MD908 KM48S2020 TC59R1809 GM72V1682 KM4232W259Q60 KM416S1120A IBM025171LG5D-70 KM44S4020AT
Contextual Info: Fujitsu Microelectronics Inc. Hitachi America Ltd. Hyundai Electronics America Inc. IBM Microelectronics LG Semicon America Inc. formerly Goldstar Mitsubishi Electronics America Inc. NEC Electronics Inc. Micron Technology Inc. Mosel Vitelic Inc. MoSys Inc.

Contextual Info: F n h fl n rp H DM2203/2213 Multibank EDOEDRAM 5 1 2 K b * 8 Product Specification H Features • 8Kbit SRAM Cache Memory for 12ns Random Reads Within Four Active Pages Mu iti bank Cache ■ Fast 4Mbit DRAM Array for 30ns Access to Any New Page ■ Write Posting Ftegister for 12ns Random Writes and Burst Writes

OFW 361

Abstract: bmg 2 1GG7
Contextual Info: • 1007E47 Enhanced Memory Systems Inc. OOOOGbb 361 ■ DM2223/2233Multibank BurstEDOEDRAM 512Kb x 8 Enhanced Dynamic RAM Preliminary Datasheet Features ■ 8Kbit SRAM Cache Memory for 15ns Random Reads Within Four Active Pages Multibank Cache ■ Fast 4Mbit DRAM Array for 35ns Access to Any New Page

MAU250

Abstract: u225 MAU2
Contextual Info: •I H Enhanced Memory Systems Inc. Features T0 Q7 SH 7 GODÜOTO bTfi ■ DM1M36SJ/DM1M32SJ 1Mbx36/1Mbx32EnhancedDRAMSIMM Product Specification Architecture The DM1M36SJ achieves 1Mb x 36 density by mounting nine 1Mb x 4 EDRAMs, packaged in 28-pin plastic SOJ packages, on a

Contextual Info: Enhanced DM2M36SJ6/DM2M32SJ6 Multibank EDO 2Mbx36/2Mbx32 Enhanced DRAM SIMM IVfemoiy Systems Inc. Product Specification Features Architecture SVM The DM2M36SJ5 achieves 2Mb x 36 density by mounti ng 181 Mb x 4 EDRAMs, packaged in 28-pin plastic 90Upackages,

1850R

Abstract: dh 1117 U514 0QQ011
Contextual Info: • H Enhanced Memory Systems Inc. Features ciD07S47 DDDG11G 21b DM2M36SJ/DM2M32SJ 2Mbx36/2Mbx32Enhanced DRAMSIMM Product Specification Architecture The DM2M36SJ achieves 2Mb x 36 density by mounting 18 1Mb x 4 EDRAMs, packaged in 28-pin plastic SOJ packages, on both sides

ASC CAPACITOR SP

Abstract: oen 8613 20 108 046f C163 C165 C166 embedded dram control 127DH C163-24D C167 Bootstrap SYSCON
Contextual Info: C163-24D Target Specification Target Specification 1998-11-04 @ 17:44 Microcomputer Components 16-bit CMOS Single-chip Microcontroller with embedded DRAM C163-24D Target Specification About this document This document was created in Adobe FrameMaker 5.5 by George Lewbel at Siemens

U23C-36

Contextual Info: •K p n h o n p p f V i i DM 1M64DT6/DM1M72DT6 Multibank EDOEDRAM m m * d 1 2 ra m d i m m ProductSpecification Features ■ 16Kbytes SAM Cache Memory for 12ns Random Reads Within Eght Active Pages Multi bank CSche ■ Fast 8Mbyte DRAM Array for 30ns Access to Any New Page

Contextual Info: Enhanced H IV f e m o iy S u t e r n s DM512K64DTBDM512K72DTE Multibank Burst EDOEDRAM 5 12Kb x 64/512Kb x 72 Enhanced DRAM DIMM b e . Product Specification Features • 8Kbytes SRAM Cache Memory for 12ns Random Reads Within Four Active Pages Multibank Cache

Contextual Info: Enhanced DM1M64DTE/DM1M72DTE M ultibank Burst EDOEDRAM 1Mb x 64/1Mb x 72 Enhanced DRAM DIMM IVfemoiy Suterns be. H Product Specification Features row register over a 2Kbyte-wide bus in just 18ns for an effective cache • 16Kbytes SRAM Cache Memory for 12ns Random Reads Within