MAU2 Search Results

Contextual Info: This product complies with RoHS Directive EU 2002/95/EC . Switching Diodes MAU2111 Silicon epitaxial planar type For high speed switching circuits 0.075±0.05 • Absolute Maximum Ratings Ta = 25°C Maximum peak reverse voltage VRM Forward current IF Forward current (Average)

Contextual Info: This product complies with RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MAU2D29 Silicon epitaxial planar type For high speed switching circuits 0.075±0.05 M Di ain sc te on na tin nc ue e/ d • Absolute Maximum Ratings Ta = 25°C Repetitive peak reverse voltage

Contextual Info: This product complies with RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MAU2728 Silicon epitaxial planar type For rectification 0.075±0.05 • Features 1 0.85±0.05  Optimum for high-density mounting  Low forward voltage VF , good wave detection efficiency η

MAU2728

Contextual Info: This product complies with RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MAU2728 Silicon epitaxial planar type For rectification • Features 1 0.13+0.05 –0.02 Non-repetitive peak forward surge current Junction temperature Storage temperature

Contextual Info: MAU200 SERIES DC/DC CONVERTER 1W, SIP-Package, High Isolation FEATURES ►SIP Package with Industry Standard Pinout ►Package Dimension: 19.5 x 10.2 x 6.1 mm 0.77"x 0.4"x 0.24" 5V&12V Models 19.5 x 10.2 x 7.1 mm (0.77"x 0.4"x 0.28") 24V Models ►Single and Dual Output Models

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MAU27280G Silicon epitaxial planar type For high speed switching circuits • Package  Optimum for high-density mounting  Low forward voltage VF , good wave detection efficiency η

MAU206

Abstract: MAU202 MAU222 MAU214 MAU201 MAU200 MAU203 MAU204 MAU205 mau212
Contextual Info: TOTAL POWER INT'L MAU200 Series1 Watt Ultra Miniature High Isolation SIP DC/DC Converters Single & Dual with Output Key Features l SMT Technology l Miniture Package l I / O Isolation 3000VDC l Efficiency Up To 81% l MTBF > 2,000,000 Hours l Low Cost +Vo +Vin

MAU2D30

Contextual Info: This product complies with RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MAU2D30 Silicon epitaxial planar type For high speed switching circuits 0.075±0.05 • Features 1 Th an W is k y Th e a pro ou Fo an po du fo r f k y log ct r b ur o iz is ro

MAU2D29

Abstract: MA27D29
Contextual Info: This product complies with RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MAU2D29 Silicon epitaxial planar type For high speed switching circuits • Features 1 0.13+0.05 –0.02 Peak forward current Non-repetitive peak forward surge current *

Contextual Info: This product complies with RoHS Directive EU 2002/95/EC . Switching Diodes MAU2111 Silicon epitaxial planar type For high speed switching circuits 0.075±0.05 1 0.85±0.05  Optimum for high-density mounting  Short reverse recovery time trr  Small terminal capacitance Ct

Contextual Info: This product complies with RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MAU2D30 Silicon epitaxial planar type For high speed switching circuits 0.075±0.05 M Di ain sc te on na tin nc ue e/ d • Absolute Maximum Ratings Ta = 25°C Repetitive peak reverse voltage

MA27D29

Abstract: MAU2D29
Contextual Info: This product complies with RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MAU2D29 Silicon epitaxial planar type For high speed switching circuits 0.075±0.05 • Features 1 Th an W is k y Th e a pro ou Fo an po du fo r f k y log ct r b ur o iz is ro

MAU2111

Contextual Info: This product complies with RoHS Directive EU 2002/95/EC . Switching Diodes MAU2111 Silicon epitaxial planar type For high speed switching circuits 0.075±0.05 1 Th an W is k y Th e a pro ou Fo an po du fo r f k y log ct r b ur o iz is ro th u e n w er fo fo ot sin

Contextual Info: MAU200 Series 1W, High Isolation SIP, Single & Dual Output DC/DC Converters Key Features y y y y y y y y y y 3000 VDC $ Low Profile Efficiency up to 81% 3000VDC Isolation MTBF > 2,000,000 Hours Low Cost Input 5, 12 and 24VDC Output 3.3,5,9,12,15,{5,{9,{12 and {15VDC

MAU200

Abstract: 4512v
Contextual Info: TOTAL POWER INT'L MAU200 TOTAL POWER INT'L Tel: 877-646-0900 Fax: 978-453-7395 Email: sales@total-power.com http://www.total-power.com -2- TOTAL POWER INT'L MAU200 Environmental Specifications Parameter Conditions Min. Typ. Max. Unit Operating Temperature

Contextual Info: This product complies with RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MAU2D30 Silicon epitaxial planar type For high speed switching circuits 0.075±0.05 • Features 1 0.85±0.05  Optimum for high-density mounting  Extremely low reverse current IR

Contextual Info: This product complies with RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MAU2728 Silicon epitaxial planar type For rectification 0.075±0.05 • Features 1 M Di ain sc te on na tin nc ue e/ d 0.85±0.05  Optimum for high-density mounting

Contextual Info: This product complies with RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MAU2D29 Silicon epitaxial planar type For high speed switching circuits 0.075±0.05 • Features 1 0.85±0.05  Optimum for high-density mounting  Low forward voltage VF

MAU27280G

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MAU27280G Silicon epitaxial planar type For high speed switching circuits • Package  Optimum for high-density mounting  Low forward voltage VF , good wave detection efficiency η

MAU27280G

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MAU27280G Silicon epitaxial planar type For high speed switching circuits • Package  Optimum for high-density mounting  Low forward voltage VF , good wave detection efficiency η

MAU2111

Contextual Info: This product complies with RoHS Directive EU 2002/95/EC . Switching Diodes MAU2111 Silicon epitaxial planar type For high speed switching circuits 0.075±0.05 1 • Absolute Maximum Ratings Ta = 25°C Forward current Forward current (Average) Non-repetitive peak forward surge current *

MAU2D30

Contextual Info: This product complies with RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MAU2D30 Silicon epitaxial planar type For high speed switching circuits • Features 1 0.13+0.05 –0.02 VR 30 V Repetitive peak reverse voltage VRRM 30 V Forward current (Average)

MAU206

Abstract: MAU202 12V DC to 24V dual dC converter circuit diagram inverter power 12v dc to 220 dc circuit diagram MAU200 MAU204 DC/DC converter analog/digital 24v DC/DC converter analog/digital 3.3v to 12v push-pull DC-dc converter MAU201
Contextual Info: MAU200 Series 1W, High Isolation SIP, Single & Dual Output DC/DC Converters Key Features y y y y y y y y y y Efficiency up to 81% 3000VDC Isolation MTBF > 2,000,000 Hours Low Cost Input 5, 12 and 24VDC Output 3.3,5,9,12,15,{5,{9,{12 and {15VDC Temperature Performance -40] to +85]

MIP2F3

Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
Contextual Info: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the