DM2212 Search Results

SWITCHING SYSTEMS INTERNATIONAL SQV

Abstract: BUT32 CQX 35
Contextual Info: I ^pM TR O N DM2202& DM2212 EDRAM 1Mbx 4 EnhancedDynamic RAM Features I 2 K-bits of 15nsec SRAM Cache Memory I Transparent DRAM Refresh Allowed During Page Reads I On-Chip Cache Hit/Miss Comparator I Hidden DRAM Precharge During Page Reads I Refresh Counter with Dedicated Path to DRAM Array

Contextual Info: M IR O N DM2202/2212EDRAM 1Mbx 4 EnhancedDynamic RAM Product Specification Features • 2Kbit SRAM Cache Memory for 15ns Random Reads Within a Page ■ Fast 4Mbit DRAM Array for 35ns Access to Any New Page ■ Write Posting Register for 15ns Random Writes and Burst Writes

Contextual Info: DM1M36SJ/DM1M32SJ 1Mbx36/1Mbx32 Enhanced DRAM SIMM r ^ M T R O N Product Specification Features Architecture • 2KByte SRAM Cache Memory for 15ns Random Reads Within a Page ■ Fast DRAM Array for 35ns Access to Any New Page ■ Write Posting Register for 15ns Random Writes and Burst Writes

U716

Abstract: U6915 1178Q
Contextual Info: H Enhanced DM2M36SJ/DM2M32SJ 2Mbx36/2Mbx32 Enhanced DRAM SIMM IVfemoiy Suterns I x . Product Specification Features Architecture • 4KByte SRAM Cache Memory for 12ns Random Reads Within Two Active Cache Pages ■ Fast DRAM Array for 30ns Axessto Any New Page

Contextual Info: DM2202/2212 EDRAM 1Mb x 4 Enhanced Dynamic RAM F ^ M T R O N Pioduct Specification Features • 2Kbit SRAM Cache Memory tor I Sns Random Reads W ithin a Page ■ Fast 4Mbit DRAM Array for 35ns Access to Any New Page ■ Write Posting Register for 15ns Random Writes and Burst Writes

2mb 72-pin simm

Abstract: 10782
Contextual Info: DM1M36SJ/DM1M32SJ 1Mbx36/1Mbx32 Enhanced DRAM SIMM F ^ M T R O N Product Specification Features • 2Kbyte SRAM Cache Memory for 15ns Random Reads Within a Page ■ Fast DRAM Array for 35ns Access to Any New Page ■ Write Posting Register for 15ns Random Writes and Burst Writes

920A7

Contextual Info: DM2202/2212 EDRAM 1Mb x 4 Enhanced Dynamic RAM Enhanced Memory Systems Inc. Product Specification Features • ■ ■ 2Kbit SRAM Cache Memory for 12ns Random Reads Within a Page Fast 4Mbit DRAM Array for 30ns Access to Any New Page Write Posting Register for 12ns Random Writes and Burst Writes

gigabyte 945

Abstract: gigabyte 945 circuit diagram U727 edram
Contextual Info: Enhanced Memory Systems Inc. DM1M36SJ/DM1M32SJ 1Mbx36/1Mbx32 Enhanced DRAM SIMM Product Specification Features Architecture The DM1M36SJ achieves 1Mb x 36 density by mounting nine 1Mb x 4 EDRAMs, packaged in 28-pin plastic SOJ packages, on a multilayer substrate. Eight DM2202

DM2202J15

Abstract: Ramtron DM2202J15 DM2202J-15 write-verify
Contextual Info: M M F n h ^ n rp ri ^1 DM22022212edram 1Mbx 4 EnhancedDynamic RAM *7 ? Memory Systems Inc. J J Product Specification Features • 2Kbit SRAM Cache Memory for 15ns Random Reads Within a Page ■ Fast 4Mbit DRAM Array for 35ns Access to Any New Page ■ Write Posting Register for 15ns Random Writes and Burst Writes

DM2202

Contextual Info: Enhanced 10ns EDRAMProductAddendum Memory Systems Inc. preliminary Features • SRAM Cache Memory for 10ns Random Reads Within a Page ■ Fast 4Mbit DRAM Array for 25ns Access to Any New Page ■ Write Posting Register for 10ns Random Writes and Burst Writes

D0-35

Abstract: DM224
Contextual Info: DM2M36SJ6/DM2M32SJ6 Multibank EDO 2Mbx36/2Mbx32 Enhanced DRAM SIMM Enhanced Memory Systems Inc. Product Specification Features Architecture The DM2M36SJ6 achieves 2Mb x 36 density by mounting 18 1Mb x 4 EDRAMs, packaged in 28-pin plastic SOJ packages, on both sides of the multi-layer

CAL03

Abstract: ramtron DM2202J
Contextual Info: Enhanced Memory Systems Inc. DM2M36SJ/DM2M32SJ 2Mbx36/2Mbx32 Enhanced DRAM SIMM Product Specification Features Architecture The DM2M36SJ achieves 2Mb x 36 density by mounting 18 1Mb x 4 EDRAMs, packaged in 28pin plastic SOJ packages, on both sides of the multi-layer

Contextual Info: DM2M36SJ/DM2M32SJ 2Mbx36/2Mbx32Enhanced DRAMSIMM r ^ M T R O N Product Specification Features Architecture • 4KByte SRAM Cache Memory for 15ns Random Reads Within a Page ■ Fast DRAM Array for 35ns Access to Any New Page ■ Write Posting Register for 15ns Random Writes and Burst Writes

U615

Abstract: DM 0365 R pin EQUIVALENT U716 U1018
Contextual Info: DM2M36SJ/DM2M32SJ 2Mbx36/2Mbx32EnhancedDRAMSIMM r ^ p M T R O N Features • 4Kbyte SRAM Cache Memory for 15ns Random Reads Within a Page ■ Fast DRAM Array for 35ns Access to Any New Page ■ Write Posting Register for 15ns Random Writes and Burst Writes

IBM025161LG5D60

Abstract: gm72v16821 MD908 KM48S2020 TC59R1809 GM72V1682 KM4232W259Q60 KM416S1120A IBM025171LG5D-70 KM44S4020AT
Contextual Info: Fujitsu Microelectronics Inc. Hitachi America Ltd. Hyundai Electronics America Inc. IBM Microelectronics LG Semicon America Inc. formerly Goldstar Mitsubishi Electronics America Inc. NEC Electronics Inc. Micron Technology Inc. Mosel Vitelic Inc. MoSys Inc.

Contextual Info: p v F n h a n r pH dm2202/2212 edram V 1Mb x 4 Enhanced tynamic RAM i l Product Specification Features • 2Kbit SRAM Cache Memory for 12ns Random Reads Within a Page ■ Fast 4Mbit DRAM Array for 30ns Access to Any New Page ■ Write Posting Register for 12ns Random Writes and Burst Writes

Contextual Info: Enhanced DM 1M36SJ/DM1M32SJ 1Mbx36/1Mbx32 Enhanced DRAM SIMM IVfemoiy Systems be. Product Specification Features Architecture • 2 KByte SRAM Cache Memory for 12ns Random Reads Within a Page ■ Fast DRAM Array for 30ns Access to Any New Page ■ Write Posting Register for 12ns Random Writes and Burst Writes

U312

Contextual Info: Enhanced DM2M3SSJ6m 2M32SJ6MuWankBX 2Mbx3V2Mbx32EnhancedDRAMSIMM Product Specification Features • 16KByte SRAM Cache Memory for 12ns Random Reads Within Eight Active Pages Multibank Cache) ■ Fast DRAM Array for 30ns Access to Any New Page ■ Write Posting Register for 12ns Random Writes and Burst Writes

vh41

Abstract: u327
Contextual Info: DM 1M36SJ & DM 1M32SJ 1Mbx 36/1Mbx 32EnhancedDRAMSIMM A / r ^ M I R O N Features Preliminary Datasheet Architecture m Compatibility with JEDEC • ■ ■ ■ ■ ■ 1M x 36 DRAM SIMM Configuration Allows Performance Upgrades in System Integrated 512 \ 36 SRAM Cache Row Register Allows 15ns

write-verify

Abstract: u327
Contextual Info: ^ M DM1M36SJ/DM1M32SJ 1Mbx36/1Mbx32 Enhanced DRAM SIMM T T R O IN J •eatures Architecture The DM1M3 >S| achieves I Mb \ ,i(> density b\ mounting nine 1M 1 2kliyte SRAM Cache Memon lor 1ms Random Reads W illiin a Page \ I ICDRAMs, packaged in 2N-pin plastic SOJ packages, on a multi­

Contextual Info: DM2202/2212EDRAM 1Mbx 4 Enhanced Dynamic RAM F ^ M I R O N Product Specification _ Features • 2Kbit SRAM Cache Memory for 15ns Random Reads Within a Page ■ Fast 4Mbit DRAM Array for 35ns Access to Any New Page ■ Write Posting Register for 15ns Random Writes and Burst Writes

Contextual Info: DM2200EDRAM 4Mb x 1Enhanced Dynamic RAM F ^ a M T R O N Product Specification Features • ■ ■ ■ 2Kbit SRAM Cache Memory for 15ns Random Reads Within a Page 8ns Burst Read Capability Fast 4Mbit DRAM Array for 35ns Access to Any New Page Write Posting Register for 15ns Random Writes and Burst Writes

MAU250

Abstract: u225 MAU2
Contextual Info: •I H Enhanced Memory Systems Inc. Features T0 Q7 SH 7 GODÜOTO bTfi ■ DM1M36SJ/DM1M32SJ 1Mbx36/1Mbx32EnhancedDRAMSIMM Product Specification Architecture The DM1M36SJ achieves 1Mb x 36 density by mounting nine 1Mb x 4 EDRAMs, packaged in 28-pin plastic SOJ packages, on a

1850R

Abstract: dh 1117 U514 0QQ011
Contextual Info: • H Enhanced Memory Systems Inc. Features ciD07S47 DDDG11G 21b DM2M36SJ/DM2M32SJ 2Mbx36/2Mbx32Enhanced DRAMSIMM Product Specification Architecture The DM2M36SJ achieves 2Mb x 36 density by mounting 18 1Mb x 4 EDRAMs, packaged in 28-pin plastic SOJ packages, on both sides