DM2200J Search Results

U14A3

Contextual Info: Enhanced IV f e m o iy S y s te m s DM4M32SJ 4Mb x 32 Enhanced DRAM SIMM In c . Product Specification Features A rchitecture The DM4M32SJ achieves 4Mb x 32 density by mounting • Integrated 2,048 x 32 SRAM Cache Row Register Allows 12ns Access Random Reads Within the Page

write-verify

Contextual Info: DM2200 EDRAM 4Mb x 1 Enhanced Dynamic RAM r ^ lM T R O N Features • 2Kbit SRAM Cache Memory for 15ns Random Reads Wiihm a Page ■ Interleave SRAM Cache for 8ns Burst Read ■ Fast 4Mbit DRAM Array for 35ns Access to Any New I’age ■ Write Posting Register for 15ns Random Writes and Burst Writes

DM2202

Contextual Info: Enhanced 10ns EDRAMProductAddendum Memory Systems Inc. preliminary Features • SRAM Cache Memory for 10ns Random Reads Within a Page ■ Fast 4Mbit DRAM Array for 25ns Access to Any New Page ■ Write Posting Register for 10ns Random Writes and Burst Writes

DM2200EDRAM

Contextual Info: 4U^> 1. h 1^92 F ^ M T R O DM2200EDRAM 4Mbx 1 Enhanced Dynamic RAM N Preliminary Datasheet Features • 2K-bits of 15nsec SRAM Cache Memory ■ On-Chip Cache Hit/Miss Comparator ■ Refresh Counter with Dedicated Path to DRAM Array ■ Write Posting Register with Path to DRAM Array

Contextual Info: DM2200EDRAM 4Mb x 1 Enhanced Dynamic RAM r ^ M T R O N Product Specification Features • 2Kbit SRAM Cache Memory for 15ns Random Reads Within a Page ■ Interleave SRAM Cache for 8ns Burst Read ■ Fast 4Mbit DRAM Array for 35ns Access to Any New Page ■ Write Posting Register for 15ns Random Writes and Burst Writes

Contextual Info: DM2200EDRAM 4Mb x 1 Enhanced Dynamic RAM r ^ p M T R O N Product Specification Features • 2Kbit SRAM Cache Memory for 15ns Random Reads Within a Page ■ 8ns Burst Read Capability ■ Fast 4Mbit DRAM Array for 35ns Access to Any New Page ■ Write Posting Register for 15ns Random Writes and Burst Writes

pd16m

Abstract: A7B1 A10B1 A8b2 DM4M a0b1 U16-31 A6B1 U32A1 U34-36
Contextual Info: Enhanced Memory Systems Inc. Features DM4M32SJ 4Mb x 32 Enhanced DRAM SIMM Product Specification Architecture The DM4M32SJ achieves 4Mb x 32 density by mounting 32 4M x 1 EDRAMs, packaged in 28-pin plastic SOJ packages on both sides of the multilayer substrate. Four buffers

Contextual Info: H Enhanced DM2200 EDRAM 4Mb x 1 Enhanced Dynamic RAM IVfemoiy Suterns be. Product Specification Features • 2Kbit SRAM Cache Memory for 12ns Random Reads Within a Page ■ Fast 4Mbit DRAM Array for 30ns Access to Any New Page ■ Write Posting Register for 12ns Random Writes and Burst Writes

Contextual Info: DM2200 EDRAM 4Mb x 1 Enhanced Dynamic RAM Enhanced Memory Systems Inc. Product Specification Features • ■ ■ 2Kbit SRAM Cache Memory for 12ns Random Reads Within a Page Fast 4Mbit DRAM Array for 30ns Access to Any New Page Write Posting Register for 12ns Random Writes and Burst Writes

Contextual Info: DM2200EDRAM 4Mb x 1Enhanced Dynamic RAM F ^ a M T R O N Product Specification Features • ■ ■ ■ 2Kbit SRAM Cache Memory for 15ns Random Reads Within a Page 8ns Burst Read Capability Fast 4Mbit DRAM Array for 35ns Access to Any New Page Write Posting Register for 15ns Random Writes and Burst Writes

write-verify

Abstract: DM2200J
Contextual Info: par Enhanced K l MemoiySystemsInc. DM 2200edram 4Ubx1GlancedDynamicRAM Product Specification Features • 2Kbit SRAM Cache Memory for 15ns Random Reads Within a Page ■ Interleave SRAM Cache for 8ns Burst Read ■ Fast 4Mbit DRAM Array for 35ns Access to Any New Page