EDO RAM 72PIN Search Results

Contextual Info: 8MB 72PIN EDO D RAM DIMM With 1Mx16 5VOLT TS2MEDM326R Description The TS2MEDM326R is a 2M x 32-bit dynamic RAM card. This consists of 4 pcs 1Mx16-bit, 5volt, EDO mode Placement DRAMs in TSOP assembled on the printed circuit board. The TS2MEDM326R is optimized for application to

Contextual Info: 8MB 72PIN EDO D RAM DIMM With 1Mx16 5VOLT TS2MEDM326R Description The TS2MEDM326R is a 2M x 32-bit dynamic RAM card. This consists of 4 pcs 1Mx16-bit, 5volt, EDO mode Placement DRAMs in TSOP assembled on the printed circuit board. The TS2MEDM326R is optimized for application to

Contextual Info: TOSHIBA ^ 0* 17 2 40 OOHfiSDM ñbO • - THM3640F5BS/BSG-60/70 PRELIMINARY 4,194,304 WORDS X 36 BIT EDO DYNAMIC RAM MODULE Description The THM3640F5BS/BSG is a 4,194,304 words by 36 bits Hyper Page Mode (EDO) dynamic RAM module which is assem­

TC5117405

Contextual Info: TOSHIBA THM328025BS/BS&60/70 PRELIMINARY 8,388,608 WORDS X 32 BIT EDO DYNAMIC RAM MODULE Description The THM328025BS/BSG is a 8,388,608 words by 32 bits Hyper Page Mode (EDO) dynamic RAM module which assembled 16 pcs of TC5117405BSJ on the printed circuit board. This module is optimized for application to the systems which are

Contextual Info: SM532X43085XLSX February 1996 Rev 0 SMART Modular Technologies SM532X43085XLSX 1MByte 256K x 32 CMOS, EDO, DRAM Module (Low Profile) General Description Features The SM532X43085XLSX is a high performance, EDO (Extended Data Out) 1-megabyte dynamic RAM module

TC5118165B

Abstract: TC5118165 thm322
Contextual Info: TOSHIBA THM3220C5BS/BSG-60/70 PRELIMINARY 2,097,152 WORDS X 32 BIT EDO DYNAMIC RAM MODULE Description The THM3220C5BS/BSG is a 2,097,152 words by 32 bits Hyper Page Mode (EDO) dynamic RAM module which is assem­ bled with 4 pcs of TC5118165BJ on the printed circuit board. This module is optimized for application to the systems which

TC5117405

Contextual Info: TOSHIBA THM3680G5BS/BSG-60/70 PRELIMINARY 8,388,608 WORDS X 36 BIT EDO DYNAMIC RAM MODULE Description The THM3680G5BS/BSG is a 8,388,608 words by 36 bits Hyper Page Mode (EDO) dynamic RAM module which is assem­ bled with 16 pcs of TC5117405BSJ and 2 pcs of TC5117445BSJ on the printed circuit board. This module is optimized for

Contextual Info: DRAM MODULE M53640812CW0/CB0 M53640812CW0/CB0 with EDO Mode 8M x 36 DRAM SIMM using 4Mx4 EDO and 4Mx4 Quad CAS, 2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M53640812C is a 8Mx36bits Dynamic RAM high density memory module. The Samsung M53640812C

Contextual Info: TOSHIBA *i[H724ô 00 2ÛS17 HIT THM328025BS/BSG-60/70 PRELIMINARY 8,388,608 WORDS X 32 BIT EDO DYNAMIC RAM MODULE Description The THM328025BS/BSG is a 8,388,608 words by 32 bits Hyper Page Mode (EDO) dynamic RAM module which assembled 16 pcs of TC5117405BSJ on the printed circuit board. This module is optimized for application to the systems which are

Contextual Info: ^017240 TOSHIBA OOEÔMbM 354 THM3210B5BS/BSG-60/70 PRELIMINARY 1,048,576 WORDS X 32 BIT EDO DYNAMIC RAM MODULE Description The THM3210B5BS/BSG is a 1,048,576 words by 32 bits Hyper Page Mode (EDO) dynamic RAM module which is assem­ bled with 2 pcs of TC5118165BJ on the printed circuit board. This module is optimized for application to the systems which

dq35 schematic diagram

Abstract: edo ram schematic
Contextual Info: SM53608408UMUUU December 7, 1998 SMART Modular Technologies SM53608408UMUUU 32MByte 8M x 36 CMOS, EDO DRAM Module General Description Features The SM53608408UMUUU is a high performance, 32-megabyte EDO (Extended Data Out) dynamic RAM module organized as 8M words by 36 bits, in a 72-pin,

Contextual Info: TOSHIBA WM ^0^7240 00Bfl47b 07b • THM3220C5BS/BSG-60/70 PRELIMINARY 2,097,152 WORDS X 32 BIT EDO DYNAMIC RAM MODULE Description The THM3220C5BS/BSG is a 2,097,152 words by 32 bits Hyper Page Mode (EDO) dynamic RAM module which is assem­ bled with 4 pcs of TC5118165BJ on the printed circuit board. This module is optimized for application to the systems which

64mb edo dram simm

Abstract: K4E160411C
Contextual Info: DRAM MODULE M53640412CW0/CB0 M53640412CW0/CB0 Fast Page Mode with EDO Mode 4M x 36 DRAM SIMM using 4Mx4 EDO and 4Mx4 Quad CAS, 2K, Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M53640412C is a 4Mx36bits Dynamic RAM high density memory module. The Samsung M53640412C

Contextual Info: TOSHIBA THM3210B5BS/BSG-60/70 PRELIMINARY 1,048,576 WORDS X 32 BIT EDO DYNAMIC RAM MODULE Description The TH M 3210B5BS/BSG is a 1,048,576 w ords by 32 bits Hyper Page M ode (EDO) dynamic RAM m odule which is assem ­ bled with 2 pcs of TC 5118165BJ on the printed circuit board. This m odule is optimized for application to the systems which

Contextual Info: TOSHIBA •^0^7240 Q O E fiM TO 4Mb THM324005BS/BSG60/70 PRELIMINARY 4,194,304 WORDS X 32 BIT EDO DYNAMIC RAM MODULE Description The THM324005BS/BSG is a 4,194,304 words by 32 bits Hyper Page Mode (EDO) dynamic RAM module which is assem­ bled with 8 pcs of TC5117405BSJ on the printed circuit board. This module is optimized for application to the systems which

thm3640*5

Contextual Info: TOSHIBA THM3640F5BS/BSG-60/70 PRELIMINARY 4,194,304 WORDS X 36 BIT EDO DYNAMIC RAM MODULE Description The TH M 3640F5BS/BSG is a 4,194,304 w ords by 36 bits Hyper Page M ode (EDO) dynamic RAM m odule which is assem ­ bled with 8 pcs of TC 5117405BSJ and 1 pc of TC 5117445BSJ on the printed circuit board. This m odule is optimized for

STI322004AD2-60SVG

Abstract: 0052M edo ram 72pin
Contextual Info: STI322004AD2-60SVG 72-PIN SO-DIMMS 2M X 32 Bits EDO DRAM SO-DIMM FEATURES GENERAL DESCRIPTION Performance range: - The Simple Technology STI322004AD2-60SVG is a 2M x 32 bits EDO Dynamic RAM high density memory module. The Simple Technology STI322004AD2-60SVG consist of four CMOS 1M

Contextual Info: cP ÏITSIJ I A M. July 1997 Revision 1.0 data sheet EDC2B V7282B-60JG-S 16MByte 2M x 72 CMOS EDO DRAM Module -3.3 V (ECC), Buffered General Description The EDC2BV7282B-60JG-S is a high performance, EDO (Extended Data Out) 16-megabyte dynamic RAM module organized

Contextual Info: KMM5368005BK/BKG KMM5368105BK/BKG DRAM MODULE KMM5368005BK/BKG & KMM5368105BK/BKG Fast Page with EDO Mode 8Mx36 DRAM SIMM, 4K & 2K Ref, using 16M Quad CAS EDO DRAM FEATURES GENERAL DESCRIPTION The Samsung KMM53680 1 05BK is a 8M bit x 36 Dynamic RAM high density memory module. The

Contextual Info: DENSE-PAC vi i c R o r i: sys 512 Megabit CMOS EDO DRAM ms DPED16MX32RW PRELIMINARY PIN-OUT DIAGRAM DESCRIPTION: The DPED16MX32RW is the 16 Meg x 32 EDO Dynamic RAM module in the family of modules that utilize the space saving TSOP technology. The module is constructed

Contextual Info: cP ÏITSIJ I A M. July 1997 Revision 1.0 data sheet EOB1UV641 1/4 B-60TG-S 8MByte ( I M x 64) CMOS EDO DRAM Module -3.3V General Description The EOB1UV641 (1/4)B-60TG-S is a high performance, EDO (Extended Data Out) 8-megabyte dynamic RAM module organized

Contextual Info: DRAM MODULE KMM5362205AW/AWG KMM5362205AW/AWG Fast Page with EDO Mode 2Mx36 DRAM SIMM, 5V, 1K Refresh using 4M Quad CAS EDO DRAM G ENERAL DESCRIPTIO N FEATURES The Samsung KMM5362205AW is a 2M bit x 36 Dynamic RAM high density memory module. The Samsung KMM5362205AW consists of four CMOS

Contextual Info: cP ÏITSIJ I A M. July 1997 Revision 1.0 data sheet EDC2UV7282B- 60/70 (J/T)G-S 16MByte (2M x 72) CMOS EDO DRAM Module -3.3V (ECC) General Description The EDC2UV7282B-60(J/T)G-S is a high performance, EDO (Extended Data Out) 16-megabyte dynamic RAM module organized

tr sc 1056

Contextual Info: 1024 Megabit CMOS EDO DRAM DENSE-PAC vi i c R osys DPED32MX32RW r i: m s PRELIMINARY PIN-OUT DIAGRAM DESCRIPTION: The DPED32MX32RW is the 32 Meg x 32 EDO Dynamic RAM module in the family of modules that utilize the space saving TSOP technology. The module is constructed