EDEI Search Results

Contextual Info: SONY _ CXB1549Q Laser Diode Driver Prelim inary Description The CXB1549Q is a high-speed monolithic Laser Diode Driver/Current Switch with ECL/PECL input level. Open collector outputs are provided at the output pins Q, QB and have the capacity of driving

Contextual Info: bOE 0 P100 i l ADTr • TDGlTMb 00OG034 Zementierter Drahtdrehwiderstand VISHAY/DRAL D|W fll 476 Potentiom ètre bobiné cim enté Cemented w irew ound potentiom eter bel 120 W Fertigungsbereich Plage des valeurs Resistance range B elastbarkeit ÖQ2 ■ à

PD488170L

Abstract: NEC 488170L D488170L RDRAM cross reference NEC RDRAM 36 REF05
Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT jiiP D 4 8 8 1 7 0 L 18M-BIT Base Rambus DRAM 1M-WORD X 9-BIT X 2-BANK ★ Description The 18-Megabit Rambus DRAM RDRAM is an extremely-high-speed CMOS DRAM organized as 1M word x 9 bits x 2 banks and capable of bursting up to 256 bytes of data at 1.67 ns per byte. The use of Rambus

32A11

Contextual Info: SERIES SMA Serie SMA Series SMA Precision coaxial connector for microwave applications. The maximum fre­ quency is 24 GHz, recommended frequency range up to 18 GHz. SMA connectors satisfy high quality standards and are characterized by high reliability, high mechanical stability, long life, and optimum electrical prop­

32K72

Abstract: 32A11 32K621-K00
Contextual Info: SERIES SMA Series SMA Serie SMA Precision coaxial connector for microwave applications. The maximum fre­ quency is 24 GHz, recommended frequency range up to 18 GHz. SMA connectors satisfy high quality standards and are characterized by high reliability, high mechanical stability, long life, and optimum electrical prop­

SiS5511

Contextual Info: SÌS5511 PCI/ISA Cache Memory Controller 2.11 Pin Assignment and Description 2.11.1 Pin Assignment 0a1 hj tJt 1001 101 CASEOSCASE 1#CASE2#' CASE3#— I CASE4#- 1 GND—I 156 155 5 CASES#— C ASE«CASE7#— 10 VCC35CASOO#CAS01#— C A S0 2 # GND15 C A S0 3 # CAS04#-CAS05#

Contextual Info: Ï Ï V E R T R A U L IC H B e m e rk u n g e n N IC H T VERMASSTE KANTEN -P ro d u k ts p e z i f i k a t i on Ln N cn Oi OJ cn - P r Q fv o r r i c h tu n g s B e s te ll N r. 50 - V e r a r b e / tu n g 70 8 -7 8 0 2 7 -0 N r .9 0 -2 4 4 S IN D N IC H T M A ß S T Ä B LIC H

transistor KL3

Abstract: EDEI
Contextual Info: :8B0,3 B?<;6 BC3C7 A7<3G 8LIWXULV Z w?;B;9JH?9 IJH;D=J> jmhh2 Z }xw IJ7JKI ?D:?97JEH Z ,>EJE ?IEB7J?ED Z uK?BJe?D IDK88;H Z 6;HE 9HEII EH H7D:EC JKHDeED Z ,H?DJ;: 9?H9K?J 8E7H: CEKDJ Z xDL?HEDC;DJ7B <H?;D:BO FHE:K9J a.E{/ 9ECFB?7DJb ;>@DC a07 s jm 97>7A3< a07 s jm

potentiometer vishay draloric 61

Abstract: draloric cermet potentiometer draloric Potentiometer potentiometer draloric 61 MAL Potentiometer D13CF1 potentiometer draloric vishay draloric Potentiometer vishay draloric Potentiometer 10 D13CF2
Contextual Info: Drehwiderstand VISHAY/DRALORIC Rotary potentiometer Keramik/Cermet Keramik/Kohle . kQE o Elektrische Daten Ceramic/Cermet Ceramic/Carbon • T D o n n t i o o o ü m b hgs Electrical data D 13 C. 61 C. D 13 K. (61 H.) Widerstandsschicht Resistive element

BFAP20

Abstract: samsung ltcc G.SHDSL Industry Single-Chip VTSA7 447h LQ13 tag 9018 LM 205h 276 741h EoPDH
Contextual Info: Rev: 063008 DS33X162/DS33X161/DS33X82/DS33X81/ DS33X42/DS33X41/DS33X11/DS33W41/DS33W11 Ethernet Over PDH Mapping Devices General Description The DS33X162 family of semiconductor devices extend 10/100/1000Mbps Ethernet LAN segments by encapsulating MAC frames in GFP-F, HDLC, cHDLC,

PD488170L

Abstract: NEC PD488170L 6A50 uPD488170LG NEC RDRAM 36 UPD488170LG6
Contextual Info: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT 18M-BIT Rambus DRAM 1M-WORD X 9-BIT X 2-BANK D escription The 18-M egabit Rambus DRAM RDRAM™ is an extrem ely-high-speed CMOS DRAM organized as 2M w ords by 9 bits and capable of bursting up to 256 bytes of data at 2 ns per byte. The use of Rambus Signaling

26K10

Contextual Info: SERIES FME Serie FME Series FME Compact miniature coaxial connector developed for mobile applications in | M iniaturisierte koaxiate Steckverbindung speziell fu r m obile Einsatzfaiie in Fahrzeugen. vehicles. I The basic element is a cable jack, whose small diameter simplifies the

Contextual Info: Rev: 012108 DS33X162/DS33X161/DS33X82/DS33X81/ DS33X42/DS33X41/DS33X11/DS33W41/DS33W11 Ethernet Over PDH Mapping Devices General Description The DS33X162 family of semiconductor devices extend 10/100/1000Mbps Ethernet LAN segments by encapsulating MAC frames in GFP-F, HDLC, cHDLC,

Contextual Info: Rev: 063008 DS3 3 X 1 6 2 /DS3 3 X 1 6 1 /DS3 3 X 8 2 /DS3 3 X 8 1 / DS3 3 X 4 2 /DS3 3 X 4 1 /DS3 3 X 1 1 /DS3 3 W4 1 /DS3 3 W1 1 Et he r ne t Ove r PDH M a pping Devic e s Ge ne ra l De sc ript ion The DS33X162 family of semiconductor devices extend 10/100/1000Mbps Ethernet LAN segments by

samsung ltcc

Contextual Info: PRELIMINARY Rev: 060607 DS33X162/DS33X161/DS33X82/DS33X81/ DS33X42/DS33X41/DS33X11/DS33W41/DS33W11 Ethernet Over PDH Mapping Devices General Description The DS33X162 family of semiconductor devices extend 10/100/1000Mbps Ethernet LAN segments by encapsulating MAC frames in GFP-F, HDLC, cHDLC,

S490A

Abstract: 2SB798 2SD999
Contextual Info: 5 s— S • 5 /— K NEC ' > 1 h =7 Silicon T ra n s is to r 2SB798 mm a & v t, ij-ty m m , h ^ c o f g J l ì i è i b i j f f l i i f t a T t c 0 2SD999 Ì a > 7 °'J X > 9 ') T '" t „ 1.5 + 0.1 T a = 25 °C ) III g n iy 9 9 n v 9 =t V -30 V -y 9 [ S U E

Contextual Info: Rev: 060607 DS33X162/DS33X161/DS33X82/DS33X81/ DS33X42/DS33X41/DS33X11/DS33W41/DS33W11 Ethernet Over PDH Mapping Devices General Description ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Y ♦ ♦ 10/100/1000 IEEE 802.3 MAC MII/RMII/GMII with Autonegotiation and Flow Control