2005 - Device Name 23 330 A1 6C
Abstract: EMRS-2 EDE1104ABSE MARK 8E diode EDE1104ABSE-8E-E EDE1108ABSE EDE1116ABSE
Text: , EDE1116ABSE Ordering Information Part number EDE1104ABSE-8E-E EDE1104ABSE-6C-E EDE1104ABSE-6E-E EDE1104ABSE-5C-E EDE1104ABSE-4A-E EDE1108ABSE-8E-E EDE1108ABSE-6C-E EDE1108ABSE-6E-E EDE1108ABSE , PRELIMINARY DATA SHEET 1G bits DDR2 SDRAM EDE1104ABSE (256M words × 4 bits) EDE1108ABSE (128M , Organization 32M words × 4 bits × 8 banks ( EDE1104ABSE ) 16M words × 8 bits × 8 banks (EDE1108ABSE) 8M , address: A0 to A9, A11 ( EDE1104ABSE ) A0 to A9 (EDE1108ABSE) · Double-data-rate architecture; two data
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EDE1104ABSE
EDE1108ABSE
EDE1116ABSE
EDE1104ABSE)
EDE1108ABSE)
EDE1116ABSE)
68-ball
EDE1104/1108ABSE)
92-ball
Device Name 23 330 A1 6C
EMRS-2
EDE1104ABSE
MARK 8E diode
EDE1104ABSE-8E-E
EDE1108ABSE
EDE1116ABSE
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2005 - Not Available
Abstract: No abstract text available
Text: , EDE1116ABSE Ordering Information Part number EDE1104ABSE-8E-E EDE1104ABSE-6C-E EDE1104ABSE-6E-E EDE1104ABSE-5C-E EDE1104ABSE-4A-E EDE1108ABSE-8E-E EDE1108ABSE-6C-E EDE1108ABSE-6E-E EDE1108ABSE-5C-E EDE1108ABSE , PRELIMINARY DATA SHEET 1G bits DDR2 SDRAM EDE1104ABSE (256M words × 4 bits) EDE1108ABSE (128M , 32M words × 4 bits × 8 banks ( EDE1104ABSE ) 16M words × 8 bits × 8 banks (EDE1108ABSE) 8M words × 16 , A9, A11 ( EDE1104ABSE ) A0 to A9 (EDE1108ABSE) · 2KB page size (EDE1116ABSE) Row address: A0 to A12
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EDE1104ABSE
EDE1108ABSE
EDE1116ABSE
EDE1104ABSE)
EDE1108ABSE)
EDE1116ABSE)
68-ball
EDE1104/1108ABSE)
92-ball
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2005 - EDE1104ABSE-8E-E
Abstract: EDE1108ABSE EDE1116ABSE EDE1104ABSE
Text: , EDE1116ABSE Ordering Information Part number EDE1104ABSE-8E-E EDE1104ABSE-6C-E EDE1104ABSE-6E-E EDE1104ABSE-5C-E EDE1104ABSE-4A-E EDE1108ABSE-8E-E EDE1108ABSE-6C-E EDE1108ABSE-6E-E EDE1108ABSE , DATA SHEET 1G bits DDR2 SDRAM EDE1104ABSE (256M words × 4 bits) EDE1108ABSE (128M words × 8 , Organization 32M words × 4 bits × 8 banks ( EDE1104ABSE ) 16M words × 8 bits × 8 banks (EDE1108ABSE) 8M , address: A0 to A9, A11 ( EDE1104ABSE ) A0 to A9 (EDE1108ABSE) · Double-data-rate architecture; two data
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EDE1104ABSE
EDE1108ABSE
EDE1116ABSE
EDE1104ABSE)
EDE1108ABSE)
EDE1116ABSE)
68-ball
EDE1104/1108ABSE)
92-ball
EDE1104ABSE-8E-E
EDE1108ABSE
EDE1116ABSE
EDE1104ABSE
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2005 - EDE1108ABSE-6E
Abstract: No abstract text available
Text: EDE1104ABSE , EDE1108ABSE, EDE1116ABSE Ordering Information Part number EDE1104ABSE-8E-E EDE1104ABSE-6C-E EDE1104ABSE-6E-E EDE1104ABSE-5C-E EDE1104ABSE-4A-E EDE1108ABSE-8E-E EDE1108ABSE-6C-E EDE1108ABSE , DATA SHEET 1G bits DDR2 SDRAM EDE1104ABSE (256M words × 4 bits) EDE1108ABSE (128M words × 8 , 4 bits × 8 banks ( EDE1104ABSE ) 16M words × 8 bits × 8 banks (EDE1108ABSE) 8M words × 16 bits × 8 , ( EDE1104ABSE ) A0 to A9 (EDE1108ABSE) · 2KB page size (EDE1116ABSE) Row address: A0 to A12 Column address: A0
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EDE1104ABSE
EDE1108ABSE
EDE1116ABSE
EDE1104ABSE)
EDE1108ABSE)
EDE1116ABSE)
68-ball
EDE1104/1108ABSE)
92-ball
EDE1108ABSE-6E
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2005 - Not Available
Abstract: No abstract text available
Text: Elpida Memory, Inc. 2005-2006 EDE1104ABSE , EDE1108ABSE, EDE1116ABSE Ordering Information Part number EDE1104ABSE-8E-E EDE1104ABSE-6C-E EDE1104ABSE-6E-E EDE1104ABSE-5C-E EDE1104ABSE-4A-E EDE1108ABSE , PRELIMINARY DATA SHEET 1G bits DDR2 SDRAM EDE1104ABSE (256M words × 4 bits) EDE1108ABSE (128M , 32M words × 4 bits × 8 banks ( EDE1104ABSE ) 16M words × 8 bits × 8 banks (EDE1108ABSE) 8M words × 16 , ( EDE1104ABSE ) A0 to A9 (EDE1108ABSE) · 2KB page size (EDE1116ABSE) Row address: A0 to A12 Column address: A0
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EDE1104ABSE
EDE1108ABSE
EDE1116ABSE
EDE1104ABSE)
EDE1108ABSE)
EDE1116ABSE)
68-ball
EDE1104/1108ABSE)
92-ball
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2005 - EDE1108ABSE-6E-E
Abstract: No abstract text available
Text: , EDE1116ABSE Ordering Information Part number EDE1104ABSE-8E-E EDE1104ABSE-6C-E EDE1104ABSE-6E-E EDE1104ABSE-5C-E EDE1104ABSE-4A-E EDE1108ABSE-8E-E EDE1108ABSE-6C-E EDE1108ABSE-6E-E EDE1108ABSE-5C-E EDE1108ABSE , PRELIMINARY DATA SHEET 1G bits DDR2 SDRAM EDE1104ABSE (256M words × 4 bits) EDE1108ABSE (128M , 32M words × 4 bits × 8 banks ( EDE1104ABSE ) 16M words × 8 bits × 8 banks (EDE1108ABSE) 8M words × 16 , ( EDE1104ABSE ) A0 to A9 (EDE1108ABSE) · 2KB page size (EDE1116ABSE) Row address: A0 to A12 Column address: A0
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EDE1104ABSE
EDE1108ABSE
EDE1116ABSE
EDE1104ABSE)
EDE1108ABSE)
EDE1116ABSE)
68-ball
EDE1104/1108ABSE)
92-ball
EDE1108ABSE-6E-E
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2006 - DDR2-400
Abstract: DDR2-533 DDR2-667 EBE20RE4ABFA EBE20RE4ABFA-4A-E EBE20RE4ABFA-5C-E EBE20RE4ABFA-6E-E CS 3820
Text: pad Package DDR2-400 (3-3-3) EDE1104ABSE-6E-E EDE1104ABSE-5C-E EDE1104ABSE-6E-E EDE1104ABSE-5C-E EDE1104ABSE-4A-E Note: 1. Module /CAS latency = component CL + 1 Pin Configurations , * (CL-tRCD-tRP) EBE20RE4ABFA-6E-E 667 533 400 EDE1104ABSE-6E-E DDR2-533 (4-4-4) EBE20RE4ABFA , to the EDE1104ABSE , EDE1108ABSE, EDE1116ABSE datasheet (E0852E). DM pins of component device fixed
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EBE20RE4ABFA
240-pin
667Mbps/533Mbps/400Mbps
cycles/64ms
M01E0107
E0873E30
DDR2-400
DDR2-533
DDR2-667
EBE20RE4ABFA
EBE20RE4ABFA-4A-E
EBE20RE4ABFA-5C-E
EBE20RE4ABFA-6E-E
CS 3820
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2005 - 92-Ball
Abstract: 92ball
Text: EDE1104ABSE , EDE1108ABSE, EDE1116ABSE 92-ball FBGA Unit: mm 10.2 ± 0.1 0.2 S B 18.2 ± 0.1 INDEX MARK 0.2 S A 0.2 S 1.20 max. S 0.35 ± 0.05 0.1 S B 0.15 M S A B 0.8 92-0.45 ± 0.05 16.0 A INDEX MARK 1.6 0.8 6.4 ECA-TS2-0158-01 Prelimininary Data Sheet E0852E10 (Ver. 1.0) 65 -
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EDE1104ABSE,
EDE1108ABSE,
EDE1116ABSE
92-ball
ECA-TS2-0158-01
E0852E10
92ball
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2005 - 68 ball fbga
Abstract: No abstract text available
Text: EDE1104ABSE , EDE1108ABSE, EDE1116ABSE Package Drawing 68-ball FBGA Unit: mm 10.2 ± 0.1 0.2 S B 18.2 ± 0.1 INDEX MARK 0.2 S A 0.2 S 1.20 max. S 0.35 ± 0.05 0.1 S B 0.15 M S A B 0.8 68-0.45 ± 0.05 INDEX MARK 14.4 A 1.6 0.8 6.4 ECA-TS2-0157-01 Prelimininary Data Sheet E0852E10 (Ver. 1.0) 64 -
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EDE1104ABSE,
EDE1108ABSE,
EDE1116ABSE
68-ball
ECA-TS2-0157-01
E0852E10
68 ball fbga
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2006 - DDR2-400
Abstract: DDR2-533 DDR2-667 EBE20RE4ABFA EBE20RE4ABFA-4A-E EBE20RE4ABFA-5C-E EBE20RE4ABFA-6E-E
Text: ) EBE20RE4ABFA-5C-E Contact pad Package DDR2-400 (3-3-3) EDE1104ABSE-6E-E EDE1104ABSE-5C-E EDE1104ABSE-6E-E EDE1104ABSE-5C-E EDE1104ABSE-4A-E Note: 1. Module /CAS latency = component CL + 1 Pin , JEDEC speed bin* (CL-tRCD-tRP) EBE20RE4ABFA-6E-E 667 533 400 EDE1104ABSE-6E-E DDR2
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EBE20RE4ABFA
240-pin
667Mbps/533Mbps/400Mbps
cycles/64ms
M01E0706
E0873E40
DDR2-400
DDR2-533
DDR2-667
EBE20RE4ABFA
EBE20RE4ABFA-4A-E
EBE20RE4ABFA-5C-E
EBE20RE4ABFA-6E-E
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2006 - pc2-5300
Abstract: elpida 1gb pc2 ECL120ACECN ELPIDA DDR2 PC2-3200 ELPIDA 68-FBGA Elpida DDR2 SDRAM component EDE1104ABSE EDE1108AASE
Text: Elpida sales to check the production status 2. Part Number EDE1104AASE EDE1104ABSE EDE1108AASE
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E0853E70
240-pin
200-pin
M01E0107
pc2-5300
elpida 1gb pc2
ECL120ACECN
ELPIDA DDR2
PC2-3200
ELPIDA
68-FBGA
Elpida DDR2 SDRAM component
EDE1104ABSE
EDE1108AASE
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2008 - PC2-6400
Abstract: DDR3-800D PC3-8500 DDR3-1066E DDR3-1333G pc2-5300 DDR3-800E ddr3 4gb ddp EDD1232 ELPIDA DRAM selection guide
Text: -E 5C-E 8G-E 6E-E 5C-E 8G-E 6E-E 5C-E EDE1104ABSE EDE1104ACSE 6E-E 5C-E 8E-E 6E-E 5C-E EDE1108ABSE 8E
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J1241E80
240-pin
204-pin
x32/x16
512Mbit
EDX5116ADSE
104-FBGA
PC2-6400
DDR3-800D
PC3-8500
DDR3-1066E
DDR3-1333G
pc2-5300
DDR3-800E
ddr3 4gb ddp
EDD1232
ELPIDA DRAM selection guide
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2006 - EBE20AE4ABFA-6E-E
Abstract: DDR2-667 EBE20AE4ABFA
Text: -667 (5-5-5) Mounted devices Gold Package EDE1104ABSE-6E-E Note: 1. Module /CAS latency = , to the EDE1104ABSE , EDE1108ABSE, EDE1116ABSE datasheet (E0852E). DM pins of component device fixed
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EBE20AE4ABFA
240-pin
667Mbps
cycles/64ms
M01E0107
E0875E20
EBE20AE4ABFA-6E-E
DDR2-667
EBE20AE4ABFA
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2006 - DDR2-667
Abstract: EBE20AE4ABFA EBE20AE4ABFA-6E-E
Text: ) DDR2-667 (5-5-5) Mounted devices Gold Package EDE1104ABSE-6E-E Note: 1. Module /CAS
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EBE20AE4ABFA
240-pin
667Mbps
cycles/64ms
M01E0706
E0875E30
DDR2-667
EBE20AE4ABFA
EBE20AE4ABFA-6E-E
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2006 - E0901E20
Abstract: EBE41AE4ABHA DDR2-667
Text: No file text available
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EBE41AE4ABHA
240-pin
667Mbps
cycles/64ms
M01E0706
E0901E20
E0901E20
EBE41AE4ABHA
DDR2-667
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2006 - DDR2-667
Abstract: EBE41AE4ABHA
Text: address and control bus. Detailed Operation Part and Timing Waveforms Refer to the EDE1104ABSE
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EBE41AE4ABHA
240-pin
667Mbps
cycles/64ms
M01E0107
E0901E10
DDR2-667
EBE41AE4ABHA
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2006 - DDR2-400
Abstract: DDR2-533 DDR2-667 EBE41RE4ABHA EBE41RE4ABHA-4A-E EBE41RE4ABHA-5C-E EBE41RE4ABHA-6E-E 3050 A3.3
Text: the address and control bus. Detailed Operation Part and Timing Waveforms Refer to the EDE1104ABSE
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EBE41RE4ABHA
240-pin
667Mbps/533Mbps/400Mbps
cycles/64ms
M01E0107
E0880E10
DDR2-400
DDR2-533
DDR2-667
EBE41RE4ABHA
EBE41RE4ABHA-4A-E
EBE41RE4ABHA-5C-E
EBE41RE4ABHA-6E-E
3050 A3.3
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2006 - EDE1108ABSE-6E-E
Abstract: DDR2-533 DDR2-667 DDR2-800 E0907E10
Text: EDE1104ABSE , EDE1108ABSE, EDE1116ABSE datasheet (E0852E). Preliminary Data Sheet E0907E10 (Ver. 1.0) 24
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EBE21EE8ABFA
240-pin
800Mbps/667Mbps/533Mbps/400Mbps
M01E0107
E0907E10
EDE1108ABSE-6E-E
DDR2-533
DDR2-667
DDR2-800
E0907E10
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2006 - DDR2-533
Abstract: DDR2-667 E0938E10
Text: ) Ground is connected. Detailed Operation Part and Timing Waveforms Refer to the EDE1104ABSE
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EBE21UE8ABDA
200-pin
667Mbps/533Mbps
cycles/64ms
M01E0107
E0938E10
DDR2-533
DDR2-667
E0938E10
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2006 - DDR2-533
Abstract: DDR2-667 DDR2-800
Text: Timing Waveforms Refer to the EDE1104ABSE , EDE1108ABSE, EDE1116ABSE datasheet (E0852E). Preliminary
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EBE21UE8ABFA
240-pin
800Mbps/667Mbps/533Mbps/400Mbps
M01E0107
E0906E10
DDR2-533
DDR2-667
DDR2-800
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2006 - DDR2-400
Abstract: DDR2-533 DDR2-667 EBE41RE4ABHA EBE41RE4ABHA-4A-E EBE41RE4ABHA-5C-E EBE41RE4ABHA-6E-E
Text: No file text available
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EBE41RE4ABHA
240-pin
667Mbps/533Mbps/400Mbps
cycles/64ms
M01E0706
E0880E20
DDR2-400
DDR2-533
DDR2-667
EBE41RE4ABHA
EBE41RE4ABHA-4A-E
EBE41RE4ABHA-5C-E
EBE41RE4ABHA-6E-E
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