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    ede1104abse Datasheets

    ede1104abse datasheet (2)

    Part ECAD Model Manufacturer Description Type PDF
    EDE1104ABSE Elpida Memory 1G bits DDR2 SDRAM Original PDF
    EDE1104ABSE-8E-E Elpida Memory 1G bits DDR2 SDRAM Original PDF

    ede1104abse Datasheets Context Search

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    2005 - Device Name 23 330 A1 6C

    Abstract: EMRS-2 EDE1104ABSE MARK 8E diode EDE1104ABSE-8E-E EDE1108ABSE EDE1116ABSE
    Text: , EDE1116ABSE Ordering Information Part number EDE1104ABSE-8E-E EDE1104ABSE-6C-E EDE1104ABSE-6E-E EDE1104ABSE-5C-E EDE1104ABSE-4A-E EDE1108ABSE-8E-E EDE1108ABSE-6C-E EDE1108ABSE-6E-E EDE1108ABSE , PRELIMINARY DATA SHEET 1G bits DDR2 SDRAM EDE1104ABSE (256M words × 4 bits) EDE1108ABSE (128M , Organization 32M words × 4 bits × 8 banks ( EDE1104ABSE ) 16M words × 8 bits × 8 banks (EDE1108ABSE) 8M , address: A0 to A9, A11 ( EDE1104ABSE ) A0 to A9 (EDE1108ABSE) · Double-data-rate architecture; two data


    Original     		PDF EDE1104ABSE EDE1108ABSE EDE1116ABSE EDE1104ABSE) EDE1108ABSE) EDE1116ABSE) 68-ball EDE1104/1108ABSE) 92-ball Device Name 23 330 A1 6C EMRS-2 EDE1104ABSE MARK 8E diode EDE1104ABSE-8E-E EDE1108ABSE EDE1116ABSE

    2005 - Not Available

    Abstract: No abstract text available
    Text: , EDE1116ABSE Ordering Information Part number EDE1104ABSE-8E-E EDE1104ABSE-6C-E EDE1104ABSE-6E-E EDE1104ABSE-5C-E EDE1104ABSE-4A-E EDE1108ABSE-8E-E EDE1108ABSE-6C-E EDE1108ABSE-6E-E EDE1108ABSE-5C-E EDE1108ABSE , PRELIMINARY DATA SHEET 1G bits DDR2 SDRAM EDE1104ABSE (256M words × 4 bits) EDE1108ABSE (128M , 32M words × 4 bits × 8 banks ( EDE1104ABSE ) 16M words × 8 bits × 8 banks (EDE1108ABSE) 8M words × 16 , A9, A11 ( EDE1104ABSE ) A0 to A9 (EDE1108ABSE) · 2KB page size (EDE1116ABSE) Row address: A0 to A12


    Original     		PDF EDE1104ABSE EDE1108ABSE EDE1116ABSE EDE1104ABSE) EDE1108ABSE) EDE1116ABSE) 68-ball EDE1104/1108ABSE) 92-ball

    2005 - EDE1104ABSE-8E-E

    Abstract: EDE1108ABSE EDE1116ABSE EDE1104ABSE
    Text: , EDE1116ABSE Ordering Information Part number EDE1104ABSE-8E-E EDE1104ABSE-6C-E EDE1104ABSE-6E-E EDE1104ABSE-5C-E EDE1104ABSE-4A-E EDE1108ABSE-8E-E EDE1108ABSE-6C-E EDE1108ABSE-6E-E EDE1108ABSE , DATA SHEET 1G bits DDR2 SDRAM EDE1104ABSE (256M words × 4 bits) EDE1108ABSE (128M words × 8 , Organization 32M words × 4 bits × 8 banks ( EDE1104ABSE ) 16M words × 8 bits × 8 banks (EDE1108ABSE) 8M , address: A0 to A9, A11 ( EDE1104ABSE ) A0 to A9 (EDE1108ABSE) · Double-data-rate architecture; two data


    Original     		PDF EDE1104ABSE EDE1108ABSE EDE1116ABSE EDE1104ABSE) EDE1108ABSE) EDE1116ABSE) 68-ball EDE1104/1108ABSE) 92-ball EDE1104ABSE-8E-E EDE1108ABSE EDE1116ABSE EDE1104ABSE

    2005 - EDE1108ABSE-6E

    Abstract: No abstract text available
    Text: EDE1104ABSE , EDE1108ABSE, EDE1116ABSE Ordering Information Part number EDE1104ABSE-8E-E EDE1104ABSE-6C-E EDE1104ABSE-6E-E EDE1104ABSE-5C-E EDE1104ABSE-4A-E EDE1108ABSE-8E-E EDE1108ABSE-6C-E EDE1108ABSE , DATA SHEET 1G bits DDR2 SDRAM EDE1104ABSE (256M words × 4 bits) EDE1108ABSE (128M words × 8 , 4 bits × 8 banks ( EDE1104ABSE ) 16M words × 8 bits × 8 banks (EDE1108ABSE) 8M words × 16 bits × 8 , ( EDE1104ABSE ) A0 to A9 (EDE1108ABSE) · 2KB page size (EDE1116ABSE) Row address: A0 to A12 Column address: A0


    Original     		PDF EDE1104ABSE EDE1108ABSE EDE1116ABSE EDE1104ABSE) EDE1108ABSE) EDE1116ABSE) 68-ball EDE1104/1108ABSE) 92-ball EDE1108ABSE-6E

    2005 - Not Available

    Abstract: No abstract text available
    Text: Elpida Memory, Inc. 2005-2006 EDE1104ABSE , EDE1108ABSE, EDE1116ABSE Ordering Information Part number EDE1104ABSE-8E-E EDE1104ABSE-6C-E EDE1104ABSE-6E-E EDE1104ABSE-5C-E EDE1104ABSE-4A-E EDE1108ABSE , PRELIMINARY DATA SHEET 1G bits DDR2 SDRAM EDE1104ABSE (256M words × 4 bits) EDE1108ABSE (128M , 32M words × 4 bits × 8 banks ( EDE1104ABSE ) 16M words × 8 bits × 8 banks (EDE1108ABSE) 8M words × 16 , ( EDE1104ABSE ) A0 to A9 (EDE1108ABSE) · 2KB page size (EDE1116ABSE) Row address: A0 to A12 Column address: A0


    Original     		PDF EDE1104ABSE EDE1108ABSE EDE1116ABSE EDE1104ABSE) EDE1108ABSE) EDE1116ABSE) 68-ball EDE1104/1108ABSE) 92-ball

    2005 - EDE1108ABSE-6E-E

    Abstract: No abstract text available
    Text: , EDE1116ABSE Ordering Information Part number EDE1104ABSE-8E-E EDE1104ABSE-6C-E EDE1104ABSE-6E-E EDE1104ABSE-5C-E EDE1104ABSE-4A-E EDE1108ABSE-8E-E EDE1108ABSE-6C-E EDE1108ABSE-6E-E EDE1108ABSE-5C-E EDE1108ABSE , PRELIMINARY DATA SHEET 1G bits DDR2 SDRAM EDE1104ABSE (256M words × 4 bits) EDE1108ABSE (128M , 32M words × 4 bits × 8 banks ( EDE1104ABSE ) 16M words × 8 bits × 8 banks (EDE1108ABSE) 8M words × 16 , ( EDE1104ABSE ) A0 to A9 (EDE1108ABSE) · 2KB page size (EDE1116ABSE) Row address: A0 to A12 Column address: A0


    Original     		PDF EDE1104ABSE EDE1108ABSE EDE1116ABSE EDE1104ABSE) EDE1108ABSE) EDE1116ABSE) 68-ball EDE1104/1108ABSE) 92-ball EDE1108ABSE-6E-E

    2006 - DDR2-400

    Abstract: DDR2-533 DDR2-667 EBE20RE4ABFA EBE20RE4ABFA-4A-E EBE20RE4ABFA-5C-E EBE20RE4ABFA-6E-E CS 3820
    Text: pad Package DDR2-400 (3-3-3) EDE1104ABSE-6E-E EDE1104ABSE-5C-E EDE1104ABSE-6E-E EDE1104ABSE-5C-E EDE1104ABSE-4A-E Note: 1. Module /CAS latency = component CL + 1 Pin Configurations , * (CL-tRCD-tRP) EBE20RE4ABFA-6E-E 667 533 400 EDE1104ABSE-6E-E DDR2-533 (4-4-4) EBE20RE4ABFA , to the EDE1104ABSE , EDE1108ABSE, EDE1116ABSE datasheet (E0852E). DM pins of component device fixed


    Original     		PDF EBE20RE4ABFA 240-pin 667Mbps/533Mbps/400Mbps cycles/64ms M01E0107 E0873E30 DDR2-400 DDR2-533 DDR2-667 EBE20RE4ABFA EBE20RE4ABFA-4A-E EBE20RE4ABFA-5C-E EBE20RE4ABFA-6E-E CS 3820

    2005 - 92-Ball

    Abstract: 92ball
    Text: EDE1104ABSE , EDE1108ABSE, EDE1116ABSE 92-ball FBGA Unit: mm 10.2 ± 0.1 0.2 S B 18.2 ± 0.1 INDEX MARK 0.2 S A 0.2 S 1.20 max. S 0.35 ± 0.05 0.1 S B 0.15 M S A B 0.8 92-0.45 ± 0.05 16.0 A INDEX MARK 1.6 0.8 6.4 ECA-TS2-0158-01 Prelimininary Data Sheet E0852E10 (Ver. 1.0) 65 -


    Original     		PDF EDE1104ABSE, EDE1108ABSE, EDE1116ABSE 92-ball ECA-TS2-0158-01 E0852E10 92ball

    2005 - 68 ball fbga

    Abstract: No abstract text available
    Text: EDE1104ABSE , EDE1108ABSE, EDE1116ABSE Package Drawing 68-ball FBGA Unit: mm 10.2 ± 0.1 0.2 S B 18.2 ± 0.1 INDEX MARK 0.2 S A 0.2 S 1.20 max. S 0.35 ± 0.05 0.1 S B 0.15 M S A B 0.8 68-0.45 ± 0.05 INDEX MARK 14.4 A 1.6 0.8 6.4 ECA-TS2-0157-01 Prelimininary Data Sheet E0852E10 (Ver. 1.0) 64 -


    Original     		PDF EDE1104ABSE, EDE1108ABSE, EDE1116ABSE 68-ball ECA-TS2-0157-01 E0852E10 68 ball fbga

    2006 - DDR2-400

    Abstract: DDR2-533 DDR2-667 EBE20RE4ABFA EBE20RE4ABFA-4A-E EBE20RE4ABFA-5C-E EBE20RE4ABFA-6E-E
    Text: ) EBE20RE4ABFA-5C-E Contact pad Package DDR2-400 (3-3-3) EDE1104ABSE-6E-E EDE1104ABSE-5C-E EDE1104ABSE-6E-E EDE1104ABSE-5C-E EDE1104ABSE-4A-E Note: 1. Module /CAS latency = component CL + 1 Pin , JEDEC speed bin* (CL-tRCD-tRP) EBE20RE4ABFA-6E-E 667 533 400 EDE1104ABSE-6E-E DDR2


    Original     		PDF EBE20RE4ABFA 240-pin 667Mbps/533Mbps/400Mbps cycles/64ms M01E0706 E0873E40 DDR2-400 DDR2-533 DDR2-667 EBE20RE4ABFA EBE20RE4ABFA-4A-E EBE20RE4ABFA-5C-E EBE20RE4ABFA-6E-E

    2006 - pc2-5300

    Abstract: elpida 1gb pc2 ECL120ACECN ELPIDA DDR2 PC2-3200 ELPIDA 68-FBGA Elpida DDR2 SDRAM component EDE1104ABSE EDE1108AASE
    Text: Elpida sales to check the production status 2. Part Number EDE1104AASE EDE1104ABSE EDE1108AASE


    Original     		PDF E0853E70 240-pin 200-pin M01E0107 pc2-5300 elpida 1gb pc2 ECL120ACECN ELPIDA DDR2 PC2-3200 ELPIDA 68-FBGA Elpida DDR2 SDRAM component EDE1104ABSE EDE1108AASE

    2008 - PC2-6400

    Abstract: DDR3-800D PC3-8500 DDR3-1066E DDR3-1333G pc2-5300 DDR3-800E ddr3 4gb ddp EDD1232 ELPIDA DRAM selection guide
    Text: -E 5C-E 8G-E 6E-E 5C-E 8G-E 6E-E 5C-E EDE1104ABSE EDE1104ACSE 6E-E 5C-E 8E-E 6E-E 5C-E EDE1108ABSE 8E


    Original     		PDF J1241E80 240-pin 204-pin x32/x16 512Mbit EDX5116ADSE 104-FBGA PC2-6400 DDR3-800D PC3-8500 DDR3-1066E DDR3-1333G pc2-5300 DDR3-800E ddr3 4gb ddp EDD1232 ELPIDA DRAM selection guide

    2006 - EBE20AE4ABFA-6E-E

    Abstract: DDR2-667 EBE20AE4ABFA
    Text: -667 (5-5-5) Mounted devices Gold Package EDE1104ABSE-6E-E Note: 1. Module /CAS latency = , to the EDE1104ABSE , EDE1108ABSE, EDE1116ABSE datasheet (E0852E). DM pins of component device fixed


    Original     		PDF EBE20AE4ABFA 240-pin 667Mbps cycles/64ms M01E0107 E0875E20 EBE20AE4ABFA-6E-E DDR2-667 EBE20AE4ABFA

    2006 - DDR2-667

    Abstract: EBE20AE4ABFA EBE20AE4ABFA-6E-E
    Text: ) DDR2-667 (5-5-5) Mounted devices Gold Package EDE1104ABSE-6E-E Note: 1. Module /CAS


    Original     		PDF EBE20AE4ABFA 240-pin 667Mbps cycles/64ms M01E0706 E0875E30 DDR2-667 EBE20AE4ABFA EBE20AE4ABFA-6E-E

    2006 - E0901E20

    Abstract: EBE41AE4ABHA DDR2-667
    Text: No file text available


    Original     		PDF EBE41AE4ABHA 240-pin 667Mbps cycles/64ms M01E0706 E0901E20 E0901E20 EBE41AE4ABHA DDR2-667

    2006 - DDR2-667

    Abstract: EBE41AE4ABHA
    Text: address and control bus. Detailed Operation Part and Timing Waveforms Refer to the EDE1104ABSE


    Original     		PDF EBE41AE4ABHA 240-pin 667Mbps cycles/64ms M01E0107 E0901E10 DDR2-667 EBE41AE4ABHA

    2006 - DDR2-400

    Abstract: DDR2-533 DDR2-667 EBE41RE4ABHA EBE41RE4ABHA-4A-E EBE41RE4ABHA-5C-E EBE41RE4ABHA-6E-E 3050 A3.3
    Text: the address and control bus. Detailed Operation Part and Timing Waveforms Refer to the EDE1104ABSE


    Original     		PDF EBE41RE4ABHA 240-pin 667Mbps/533Mbps/400Mbps cycles/64ms M01E0107 E0880E10 DDR2-400 DDR2-533 DDR2-667 EBE41RE4ABHA EBE41RE4ABHA-4A-E EBE41RE4ABHA-5C-E EBE41RE4ABHA-6E-E 3050 A3.3

    2006 - EDE1108ABSE-6E-E

    Abstract: DDR2-533 DDR2-667 DDR2-800 E0907E10
    Text: EDE1104ABSE , EDE1108ABSE, EDE1116ABSE datasheet (E0852E). Preliminary Data Sheet E0907E10 (Ver. 1.0) 24


    Original     		PDF EBE21EE8ABFA 240-pin 800Mbps/667Mbps/533Mbps/400Mbps M01E0107 E0907E10 EDE1108ABSE-6E-E DDR2-533 DDR2-667 DDR2-800 E0907E10

    2006 - DDR2-533

    Abstract: DDR2-667 E0938E10
    Text: ) Ground is connected. Detailed Operation Part and Timing Waveforms Refer to the EDE1104ABSE


    Original     		PDF EBE21UE8ABDA 200-pin 667Mbps/533Mbps cycles/64ms M01E0107 E0938E10 DDR2-533 DDR2-667 E0938E10

    2006 - DDR2-533

    Abstract: DDR2-667 DDR2-800
    Text: Timing Waveforms Refer to the EDE1104ABSE , EDE1108ABSE, EDE1116ABSE datasheet (E0852E). Preliminary


    Original     		PDF EBE21UE8ABFA 240-pin 800Mbps/667Mbps/533Mbps/400Mbps M01E0107 E0906E10 DDR2-533 DDR2-667 DDR2-800

    2006 - DDR2-400

    Abstract: DDR2-533 DDR2-667 EBE41RE4ABHA EBE41RE4ABHA-4A-E EBE41RE4ABHA-5C-E EBE41RE4ABHA-6E-E
    Text: No file text available


    Original     		PDF EBE41RE4ABHA 240-pin 667Mbps/533Mbps/400Mbps cycles/64ms M01E0706 E0880E20 DDR2-400 DDR2-533 DDR2-667 EBE41RE4ABHA EBE41RE4ABHA-4A-E EBE41RE4ABHA-5C-E EBE41RE4ABHA-6E-E

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