2009 - EDE2116ACBG
Abstract: EDE2116ACBG-1J-F EDE1116AGBG-1J-F DDR3-800D ELPIDA lpddr DDR3-800E EDE1116AGBG EDJ1108DBSE DDR3 layout EDE1032AGBG
Text: .6 5. DDR2 SDRAM .6 6. DDR2 SDRAM Module 240-pin Registered 7. DDR2 SDRAM Module 240-pin Unbuffered DIMM .7 8. DDR2 SDRAM Module 200-pin 9. DDR2 SDRAM Module FB-DIMM
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E1454E90
240-pin
M01E0706
EDE2116ACBG
EDE2116ACBG-1J-F
EDE1116AGBG-1J-F
DDR3-800D
ELPIDA lpddr
DDR3-800E
EDE1116AGBG
EDJ1108DBSE
DDR3 layout
EDE1032AGBG
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2010 - EDE2116ACBG
Abstract: EDJ2116DASE ECM220ACBCN ELPIDA EDJ2116DASE EDE1116AGBG EDE2116ACBG-1J-F GDDR5 EDJ1108DBSE-GN-F ELPIDA lpddr EDE1116AGBG-1J-F
Text: .5 5. DDR2 SDRAM .6 6. DDR2 SDRAM Module 240-pin Registered 7. DDR2 SDRAM Module 240-pin Unbuffered DIMM .6 8. DDR2 SDRAM Module 200-pin 9. DDR2 SDRAM Module FB-DIMM
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E1610E30
240-pin
M01E0706
EDE2116ACBG
EDJ2116DASE
ECM220ACBCN
ELPIDA EDJ2116DASE
EDE1116AGBG
EDE2116ACBG-1J-F
GDDR5
EDJ1108DBSE-GN-F
ELPIDA lpddr
EDE1116AGBG-1J-F
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2006 - pc2-5300
Abstract: elpida 1gb pc2 ECL120ACECN ELPIDA DDR2 PC2-3200 ELPIDA 68-FBGA Elpida DDR2 SDRAM component EDE1104ABSE EDE1108AASE
Text: Production Ask: Contact Elpida sales to check the production status 4. DDR2 SDRAM Module 200 , Selection Guide CONTENTS 1. DDR2 SDRAM .4 2. DDR2 SDRAM Module 240-pin Registered 3. DDR2 SDRAM Module 240-pin Unbuffered DIMM .5 4. DDR2 SDRAM Module 200-pin SO-DIMM
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E0853E70
240-pin
200-pin
M01E0107
pc2-5300
elpida 1gb pc2
ECL120ACECN
ELPIDA DDR2
PC2-3200
ELPIDA
68-FBGA
Elpida DDR2 SDRAM component
EDE1104ABSE
EDE1108AASE
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2006 - FBGA DDR3 x32
Abstract: "DDR3 SDRAM" DDR3 SDRAM 78 ball fbga ddr3 specification DDR3 architecture ELPIDA DDR3 1066 Single Data Rate SDRAM Memory Controller with 512MB DDr3 part number
Text: DDR3 SDRAM Feature Comparison of DDR3, DDR2 , and DDR SDRAM Items DDR3 SDRAM DDR2 SDRAM DDR SDRAM Clock frequency 533/667MHz 200/266/333/400MHz 100/133/166/200MHz Transfer , Support Unsupported Component package FBGA FBGA TSOP(II)/FBGA/LQFP Lead-free Support Support Support 512Mb DDR3 SDRAM Elpida Memory completed the development of next-generation 512Mb , ) http://www.elpida.com DDR3 SDRAM DDR3 SDRAM DIMM Elpida Memory announced the sample shipment of
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533/667MHz
200/266/333/400MHz
100/133/166/200MHz
1066/1333Mbps
400/533/667/800Mbps
200/266/333/400Mbps
x4/x8/x16
x4/x8/x16/x32
512Mb
FBGA DDR3 x32
"DDR3 SDRAM"
DDR3 SDRAM
78 ball fbga
ddr3 specification
DDR3 architecture
ELPIDA DDR3
1066
Single Data Rate SDRAM Memory Controller with 512MB
DDr3 part number
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2005 - ELPIDA DDR technical note
Abstract: TSOP II elpida ELPIDA DDR User ELPIDA Elpida Memory Elpida DDR2 SDRAM component ELPIDA DDR manual ELPIDA SDRAM User Manual
Text: TECHNICAL NOTE FEATURE COMPARISON OF DDR2 SDRAM , DDR SDRAM and SDRAM CAUTION This document shows differences between DDR2 SDRAM , DDR SDRAM and SDRAM . For details about the functions and , Specifications Items DDR2 SDRAM DDR SDRAM SDRAM Clock frequency 200/266/333/400MHz 100/133/166 , COMPARISON OF DDR2 SDRAM , DDR SDRAM and SDRAM The information in this document is current as January, 2005 , ) Support Unsupported Unsupported Component package FBGA TSOP(II)/FBGA/LQFP TSOP(II)/FBGA
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200/266/333/400MHz
100/133/166/200MHz
100/133/166MHz
400/533/667/800Mbps
200/266/333/400Mbps
M01E0107
E0592E10
ELPIDA DDR technical note
TSOP II elpida
ELPIDA DDR User
ELPIDA
Elpida Memory
Elpida DDR2 SDRAM component
ELPIDA DDR manual
ELPIDA SDRAM User Manual
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2006 - E1001E
Abstract: DDR2-533 DDR2-667 ELPIDA ddr2 elpida DDR2 routing
Text: on DDR2 SDRAM component specification. 2. Refer to JESD51-3 "Low effective thermal conductivity Test , following: DTx = IDDx × VDD × Psi T-A, where IDDx definition is based on JEDEC DDR2 SDRAM component , pieces of 512M bits DDR2 SDRAM sealed in FBGA · Package 240-pin fully buffered, socket type dual in , ): 655-ball FCBGA Lead-free (RoHS compliant) · Power supply DDR2 SDRAM : VDD = 1.8V ± 0.1V AMB: VCC , and reporting · Automatic DDR2 SDRAM bus and channel calibration · SPD (serial presence detect
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EBE21FD4AHFT
EBE21FD4AHFE
EBE21FD4AHFL
240-pin
655-ball
75V/-0
667Mbps/533Mbps
M01E0107
E1001E30
E1001E
DDR2-533
DDR2-667
ELPIDA ddr2
elpida DDR2 routing
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2006 - elpida DDR2 routing
Abstract: DDR2-533 DDR2-667
Text: on DDR2 SDRAM component specification. 2. Refer to JESD51-3 "Low effective thermal conductivity Test , following: DTx = IDDx × VDD × Psi T-A, where IDDx definition is based on JEDEC DDR2 SDRAM component , pieces of 512M bits DDR2 SDRAM sealed in FBGA · Package 240-pin fully buffered, socket type dual in , ): 655-ball FCBGA Lead-free (RoHS compliant) · Power supply DDR2 SDRAM : VDD = 1.8V ± 0.1V AMB: VCC , and reporting · Automatic DDR2 SDRAM bus and channel calibration · SPD (serial presence detect
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EBE11FD8AHFT
EBE11FD8AHFE
EBE11FD8AHFL
240-pin
655-ball
75V/-0
667Mbps/533Mbps
M01E0107
E1000E30
elpida DDR2 routing
DDR2-533
DDR2-667
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2006 - DDR2-533
Abstract: DDR2-667 PC2-4200F elpida DDR2 routing
Text: on DDR2 SDRAM component specification. 2. Refer to JESD51-3 "Low effective thermal conductivity Test , following: DTx = IDDx × VDD × Psi T-A, where IDDx definition is based on JEDEC DDR2 SDRAM component , of 512M bits DDR2 SDRAM sealed in FBGA · Package 240-pin fully buffered, socket type dual in line , -ball FCBGA Lead-free (RoHS compliant) · Power supply DDR2 SDRAM : VDD = 1.8V ± 0.1V AMB: VCC = 1.5V + , and reporting · Automatic DDR2 SDRAM bus and channel calibration · SPD (serial presence detect
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512MB
EBE51FD8AHFT
EBE51FD8AHFE
EBE51FD8AHFL
512MB
240-pin
655-ball
75V/-0
667Mbps/533Mbps
M01E0107
DDR2-533
DDR2-667
PC2-4200F
elpida DDR2 routing
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2006 - E0867E20
Abstract: DDR2-533 DDR2-667 EDE5108AGSE-6E-E
Text: : AMB current Notes: 1. Based on DDR2 SDRAM component specification. 2. Refer to JESD51-3 "Low , JEDEC DDR2 SDRAM component specification and at VDD=1.9V, it is the datasheet (worst case) value, and , bits DDR2 SDRAM sealed in FBGA · Package 240-pin fully buffered, socket type dual in line memory , Lead-free (RoHS compliant) · Power supply DDR2 SDRAM : VDD = 1.8V ± 0.1V AMB: VCC = 1.5V + 0.075V/-0.045 , DDR2 SDRAM bus and channel calibration · SPD (serial presence detect) with 1piece of 256 byte serial
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EBE11FD8AGFD
EBE11FD8AGFN
240-pin
655-ball
75V/-0
667Mbps/533Mbps
M01E0107
E0867E20
E0867E20
DDR2-533
DDR2-667
EDE5108AGSE-6E-E
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2006 - DDR2-533
Abstract: DDR2-667 E0931E20
Text: : AMB current Notes: 1. Based on DDR2 SDRAM component specification. 2. Refer to JESD51-3 "Low , JEDEC DDR2 SDRAM component specification and at VDD=1.9V, it is the datasheet (worst case) value, and , Density: 4GB · Organization 512M words × 72 bits, 2 ranks · Mounting 36 pieces of 1G bits DDR2 SDRAM , compliant) · Power supply DDR2 SDRAM : VDD = 1.8V ± 0.1V AMB: VCC = 1.5V + 0.075V/-0.045 · Data rate , DDR2 SDRAM bus and channel calibration · SPD (serial presence detect) with 1piece of 256 byte serial
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EBE41FE4ABHD
240-pin
655-ball
75V/-0
667Mbps/533Mbps
M01E0107
E0931E20
DDR2-533
DDR2-667
E0931E20
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2008 - block diagram of so2 sensor
Abstract: 1024M DDR2-667 DDR2-800 FEH 231
Text: : AMB current Notes: 1. Based on DDR2 SDRAM component specification. 2. Refer to JESD51-3 "Low , JEDEC DDR2 SDRAM component specification and at VDD=1.9V, it is the datasheet (worst case) value, and , Density: 8GB · Organization 1024M words × 72 bits, 4 ranks · Mounting 36 pieces of 2G bits DDR2 SDRAM , Memory Buffer (AMB): 655-ball FCBGA Lead-free (RoHS compliant) · Power supply DDR2 SDRAM : VDD = 1.8V , Channel error detection and reporting · Automatic DDR2 SDRAM bus and channel calibration · SPD (serial
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EBE82FF4A1RR
1024M
240-pin
655-ball
800Mbps/667Mbps
M01E0706
E1339E20
block diagram of so2 sensor
DDR2-667
DDR2-800
FEH 231
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2007 - DDR2-667
Abstract: DDR2-800
Text: temperature Tstg 55 to +100 °C 1 Notes: 1. DDR2 SDRAM component specification. 2. Supporting , ) ( DDR2 SDRAM Component Specification) Parameter Symbol min. typ. max. Unit Notes , Specification ( DDR2 SDRAM Component Specification) Parameter Pins Specification Unit Maximum peak , EBE20AE4ACFA DC Characteristics 2 (TC = 0°C to +85°C, VDD, VDDQ = 1.8V ± 0.1V) ( DDR2 SDRAM Component , Default Characteristics (TC = 0°C to +85°C, VDD, VDDQ = 1.8V ± 0.1V) ( DDR2 SDRAM Component Specification
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EBE20AE4ACFA
240-pin
800Mbps/667Mbps
cycles/64ms
M01E0706
E1076E30
DDR2-667
DDR2-800
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2008 - EBE81AF4ABHA
Abstract: E1196E DDR2 SDRAM component 1024M DDR2-667 EDE2108 ELPIDA ddr2 elpida memory ddr2
Text: Storage temperature Tstg 55 to +100 °C 1 Notes: 1. DDR2 SDRAM component specification. 2 , (TC = 0°C to +85°C) ( DDR2 SDRAM Component Specification) Parameter Symbol min. typ. max , EBE81AF4ABHA AC Overshoot/Undershoot Specification ( DDR2 SDRAM Component Specification) Parameter Pins , +85°C, VDD, VDDQ = 1.8V ± 0.1V) ( DDR2 SDRAM Component Specification) Parameter Symbol Value , Characteristics 3 (TC = 0°C to +85°C, VDD, VDDQ = 1.8V ± 0.1V) ( DDR2 SDRAM Component Specification) Parameter
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EBE81AF4ABHA
1024M
240-pin
667Mbps
cycles/64ms
M01E0706
E1262E30
EBE81AF4ABHA
E1196E
DDR2 SDRAM component
DDR2-667
EDE2108
ELPIDA ddr2
elpida memory ddr2
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2007 - Not Available
Abstract: No abstract text available
Text: °C 1, 2 1 1 Notes 1 Note: 1. DDR2 SDRAM component specification. 2. Supporting 0°C to +85°C and , may affect device reliability. DC Operating Conditions (TC = 0°C to +85°C) ( DDR2 SDRAM Component , Specification ( DDR2 SDRAM Component Specification) Parameter Maximum peak amplitude allowed for overshoot , °C to +85°C, VDD, VDDQ = 1.8V ± 0.1V) ( DDR2 SDRAM Component Specification) Parameter Input leakage , 3 (TC = 0°C to +85°C, VDD, VDDQ = 1.8V ± 0.1V) ( DDR2 SDRAM Component Specification) Parameter AC
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EBE11UD8AJUA
200-pin
800Mbps/667Mbps
cycles/64ms
M01E0706
E1083E20
|
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2006 - PC2-4200
Abstract: EDE5108AGSE-6E-E DDR2-533 DDR2-667 EBE51FD8AGFD EBE51FD8AGFN
Text: : AMB current Notes: 1. Based on DDR2 SDRAM component specification. 2. Refer to JESD51-3 "Low , JEDEC DDR2 SDRAM component specification and at VDD=1.9V, it is the datasheet (worst case) value, and , bits DDR2 SDRAM sealed in FBGA · Package 240-pin fully buffered, socket type dual in line memory , Lead-free (RoHS compliant) · Power supply DDR2 SDRAM : VDD = 1.8V ± 0.1V AMB: VCC = 1.5V + 0.075V/-0.045 , DDR2 SDRAM bus and channel calibration · SPD (serial presence detect) with 1piece of 256 byte serial
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512MB
EBE51FD8AGFD
EBE51FD8AGFN
512MB
240-pin
655-ball
75V/-0
667Mbps/533Mbps
M01E0107
E0869E30
PC2-4200
EDE5108AGSE-6E-E
DDR2-533
DDR2-667
EBE51FD8AGFD
EBE51FD8AGFN
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2007 - DDR2-667
Abstract: EDE5104AJSE-8E-E udqs
Text: Operating Conditions (TC = 0°C to +85°C) ( DDR2 SDRAM Component Specification) Parameter Symbol min , (Ver. 2.0) 10 EBE21AD4AJFA AC Overshoot/Undershoot Specification ( DDR2 SDRAM Component , 0.1V) ( DDR2 SDRAM Component Specification) Parameter Symbol Value Unit Notes Input , , VDD, VDDQ = 1.8V ± 0.1V) ( DDR2 SDRAM Component Specification) Parameter Symbol min. max , Characteristics (TC = 0°C to +85°C, VDD, VDDQ = 1.8V ± 0.1V) ( DDR2 SDRAM Component Specification) Parameter
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EBE21AD4AJFA
240-pin
667Mbps
cycles/64ms
M01E0706
E1041E20
DDR2-667
EDE5104AJSE-8E-E
udqs
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2007 - PS 2701
Abstract: DDR2-667 EDE5104AJSE-8E-E
Text: 55 to +100 °C 1 Notes: 1. DDR2 SDRAM component specification. 2. Supporting 0°C to +85°C , Specification ( DDR2 SDRAM Component Specification) Parameter Pins Specification Unit Maximum peak , +85°C, VDD, VDDQ = 1.8V ± 0.1V) ( DDR2 SDRAM Component Specification) Parameter Symbol Value , Characteristics 3 (TC = 0°C to +85°C, VDD, VDDQ = 1.8V ± 0.1V) ( DDR2 SDRAM Component Specification) Parameter , Characteristics (TC = 0°C to +85°C, VDD, VDDQ = 1.8V ± 0.1V) ( DDR2 SDRAM Component Specification) Parameter
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EBE10AD4AJFA
240-pin
667Mbps
cycles/64ms
M01E0706
E1039E30
PS 2701
DDR2-667
EDE5104AJSE-8E-E
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2007 - Not Available
Abstract: No abstract text available
Text: 55 to +100 Unit V V mA W °C °C 1, 2 1 1 Notes 1 Notes: 1. DDR2 SDRAM component specification. 2 , ) ( DDR2 SDRAM Component Specification) Parameter Supply voltage Symbol VDD, VDDQ VSS VDDSPD Input , EBE20AE4ACFA AC Overshoot/Undershoot Specification ( DDR2 SDRAM Component Specification) Parameter Maximum , Characteristics 2 (TC = 0°C to +85°C, VDD, VDDQ = 1.8V ± 0.1V) ( DDR2 SDRAM Component Specification) Parameter , Characteristics 3 (TC = 0°C to +85°C, VDD, VDDQ = 1.8V ± 0.1V) ( DDR2 SDRAM Component Specification) Parameter AC
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EBE20AE4ACFA
240-pin
667Mbps
cycles/64ms
M01E0706
E1076E20
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2007 - Not Available
Abstract: No abstract text available
Text: Operating Conditions (TC = 0°C to +85°C) ( DDR2 SDRAM Component Specification) Parameter Supply voltage , , VDDQ = 1.8V ± 0.1V) ( DDR2 SDRAM Component Specification) Parameter Input leakage current Output , , VDDQ = 1.8V ± 0.1V) ( DDR2 SDRAM Component Specification) Parameter AC differential input voltage AC , DC Electrical Characteristics (TC = 0°C to +85°C, VDD, VDDQ = 1.8V ± 0.1V) ( DDR2 SDRAM Component , Characteristics (TC = 0°C to +85°C, VDD, VDDQ = 1.8V ± 0.1V) ( DDR2 SDRAM Component Specification) Parameter
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EBE10AD4AJFA
240-pin
667Mbps
cycles/64ms
M01E0706
E1039E11
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2007 - E1217E10
Abstract: EDE1108ACBG EBE21UE8ACUA-8G-E DDR2-667 DDR2-800 EBE21UE8ACUA 39PIN
Text: Operating Conditions (TC = 0°C to +85°C) ( DDR2 SDRAM Component Specification) Parameter Symbol min , . 1.0) 9 EBE21UE8ACUA AC Overshoot/Undershoot Specification ( DDR2 SDRAM Component Specification , , VDDQ = 1.8V ± 0.1V) ( DDR2 SDRAM Component Specification) Parameter Symbol Value Input , (TC = 0°C to +85°C, VDD, VDDQ = 1.8V ± 0.1V) ( DDR2 SDRAM Component Specification) Parameter , Characteristics (TC = 0°C to +85°C, VDD, VDDQ = 1.8V ± 0.1V) ( DDR2 SDRAM Component Specification) Parameter
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EBE21UE8ACUA
200-pin
800Mbps/667Mbps
cycles/64ms
M01E0706
E1217E10
E1217E10
EDE1108ACBG
EBE21UE8ACUA-8G-E
DDR2-667
DDR2-800
39PIN
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2007 - 14-20P
Abstract: No abstract text available
Text: +100 Unit V V mA W °C °C 1, 2 1 1 Notes 1 Notes: 1. DDR2 SDRAM component specification. 2 , ) ( DDR2 SDRAM Component Specification) Parameter Supply voltage Symbol VDD, VDDQ VSS VDDSPD Input , . 1.1) 10 EBE21AD4AJFA AC Overshoot/Undershoot Specification ( DDR2 SDRAM Component Specification , EBE21AD4AJFA DC Characteristics 2 (TC = 0°C to +85°C, VDD, VDDQ = 1.8V ± 0.1V) ( DDR2 SDRAM Component , VDDQ = 1.8V. DC Characteristics 3 (TC = 0°C to +85°C, VDD, VDDQ = 1.8V ± 0.1V) ( DDR2 SDRAM Component
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EBE21AD4AJFA
240-pin
667Mbps
cycles/64ms
M01E0706
E1041E11
14-20P
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2008 - Not Available
Abstract: No abstract text available
Text: Notes: 1. DDR2 SDRAM component specification. 2. Supporting 0°C to +85°C and being able to extend to , . DC Operating Conditions (TC = 0°C to +85°C) ( DDR2 SDRAM Component Specification) Parameter Supply , /Undershoot Specification ( DDR2 SDRAM Component Specification) Parameter Maximum peak amplitude allowed for , 0.1V) ( DDR2 SDRAM Component Specification) Parameter Input leakage current Output leakage current , 1.8V ± 0.1V) ( DDR2 SDRAM Component Specification) Parameter AC differential input voltage AC
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EBE81AF4ABHA
1024M
240-pin
667Mbps
cycles/64ms
M01E0706
E1262E20
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2008 - Not Available
Abstract: No abstract text available
Text: IDD: DRAM current, ICC: AMB current Notes: 1. Based on DDR2 SDRAM component specification. 2. Refer to , based on JEDEC DDR2 SDRAM component specification and at VDD=1.9V, it is the datasheet (worst case , Organization 1024M words × 72 bits, 4 ranks · Mounting 36 pieces of 2G bits DDR2 SDRAM with DDP (FBGA) DDP: 2 , -ball FCBGA Lead-free (RoHS compliant) · Power supply DDR2 SDRAM : VDD = 1.8V ± 0.1V AMB: VCC = 1.5V +0.075V , a thermal sensor and status indicator · Channel error detection and reporting · Automatic DDR2 SDRAM
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EBE82FF4A1RR
1024M
240-pin
655-ball
667Mbps
M01E0706
E1339E10
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2007 - DDR2-667
Abstract: EDE5108AJSE-6E-E
Text: °C 1 Notes: 1. DDR2 SDRAM component specification. 2. Supporting 0°C to +85°C and being able , periods may affect device reliability. DC Operating Conditions (TC = 0°C to +85°C) ( DDR2 SDRAM Component , 1.8V ± 0.1V) ( DDR2 SDRAM Component Specification) Parameter Symbol Value Input leakage , , VDD, VDDQ = 1.8V ± 0.1V) ( DDR2 SDRAM Component Specification) Parameter Symbol min. max , (TC = 0°C to +85°C, VDD, VDDQ = 1.8V ± 0.1V) ( DDR2 SDRAM Component Specification) Parameter
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512MB
EBE51AD8AJFA
512MB
240-pin
667Mbps
cycles/64ms
M01E0706
E1037E30
DDR2-667
EDE5108AJSE-6E-E
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2007 - Not Available
Abstract: No abstract text available
Text: Operating Conditions (TC = 0°C to +85°C) ( DDR2 SDRAM Component Specification) Parameter Supply voltage , Characteristics 2 (TC = 0°C to +85°C, VDD, VDDQ = 1.8V ± 0.1V) ( DDR2 SDRAM Component Specification) Parameter , Characteristics 3 (TC = 0°C to +85°C, VDD, VDDQ = 1.8V ± 0.1V) ( DDR2 SDRAM Component Specification) Parameter AC , 0.1V) ( DDR2 SDRAM Component Specification) Parameter Rtt effective impedance value for EMRS (A6, A2) = , OCD Default Characteristics (TC = 0°C to +85°C, VDD, VDDQ = 1.8V ± 0.1V) ( DDR2 SDRAM Component
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EBE20AE4ACFA
240-pin
667Mbps
cycles/64ms
M01E0107
E1076E10
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