EBO2 Search Results

motor driver full bridge 10A 100V

Abstract: EB02 motor driver full bridge 10A dc motor driver full bridge 10A
Contextual Info: TRIPLE INDEPENDENT LOGIC INTERFACED HALF BRIDGES EBO2 M I C R O T E C H N O L O G Y HTTP://WWW.APEXMICROTECH.COM 800 546-APEX (800) 546-2739 FEATURES • • • • • COMPATIBLE WITH PWM FREQUENCIES UP TO 50KHZ 10V TO 100 V MOTOR SUPPLY 10A CONTINUOUS OUTPUT CURRENT

motor driver full bridge 10A 100V

Abstract: motor driver full bridge 10A motor driver full bridge 20A dc motor driver full bridge 10A PWM DRIVE control 100V 20A EBO2 EB02 DSP BASED MOTION CONTROL driver full bridge 10A 100V step motor driver 10A
Contextual Info: TRIPLE INDEPENDENT LOGIC INTERFACED HALF BRIDGES EBO2 M I C R O T E C H N O L O G Y HTTP://WWW.APEXMICROTECH.COM 800 546-APEX (800) 546-2739 FEATURES • • • • • COMPATIBLE WITH PWM FREQUENCIES UP TO 50KHZ 10V TO 100 V MOTOR SUPPLY 10A CONTINUOUS OUTPUT CURRENT

rsn 3502

Abstract: rsn 3305 rsn 3404 RSN 3306 CL0116 1803 DFX equivalent transistor TT 3034 TT 2206 datasheet transistor tt 2222 ic sw 2604
Contextual Info: FS7000 SERIES 0.5

m STANDARD CELL 1998 FS73A_B HOLTEK Semiconductor Inc. TABLE OF CONTENTS - INDEX -I. Functional Index of Macrocells ………………………….………… I-1 II. Alphanumeric index of Macrocells …………………………….…… II-1

Contextual Info: 2N6352 and 2N6353 NPN Darlington Power Silicon Transistor Available on commercial versions Qualified per MIL-PRF-19500/472 Qualified Levels: JAN, JANTX, and JANTXV DESCRIPTION This high speed NPN transistor is military qualified up to the JANTXV level. This TO-213AA

TMS57571B

Abstract: TGS 308 TGS 310 CS5842 HD66350T LH168R IC 7475 EBO1 T6L64
Contextual Info: CS5842 LCD Panel Timing Controller 15" GENERAL DESCRIPTION FEATURES (continued) CS5842 is a TFT-LCD timing controller, which is applicable to 8-bit data XGA (1024*768), SXGA (1280*1024). CS5842 can update the response timing for display mode of XGA and SXGA automatically.

JANS2N3700UB

Abstract: microsemi ub package tape reel
Contextual Info: JANS_2N3700UB Qualified Levels: JANSM, JANSD, JANSP, JANSL, and JANSR RADIATION HARDENED LOW POWER NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/391 DESCRIPTION This NPN ceramic surface mount device is RAD hard qualified for high-reliability applications.

Contextual Info: 2N3700UB Available on commercial versions Low Power NPN Silicon Transistor Qualified per MIL-PRF-19500/391 Qualified Levels: JAN, JANTX, JANTXV, and JANS DESCRIPTION This 2N3700UB NPN ceramic surface mount device is military qualified for high-reliability

1000w inverter PURE SINE WAVE schematic diagram

Abstract: schematic diagram inverter 5000w schematic diagram power inverter 5000w, 12v dc schematic diagram inverter 5000w USING MOSFET power amplifier 5000W with PCB 5000w audio amplifier circuit diagram 5 channels 5000w audio amplifier circuit diagram 4000w audio amplifier 500w pioneer power amp circuit diagram igbt inverter welder schematic
Contextual Info: Power Amplifier Product Matrix 1200 PA89 900 PA97 500 PA95 PA88 450 PA15 PA91 PA85/PA98 PA93 400 PA92 350 PA41/PA42/PA44 300 Supply Voltage V PA94 PA90 PA84 PA83 PA82J PA08 PB58 PA04 200 PA81J PA46 150 PA03 PB50 PA45 PA07 100 PA12 PA13 PA10 90 PA05 PA61 PA51

TGS 308

Abstract: TMS57571B TMS57571 CS5842 57571 POLIN IC 7475 BLOCK DIAGRAM Myson Century HD66350T LH168R
Contextual Info: Myson-Century Technology CS5842 LCD Panel Timing Controller 15" GENERAL DESCRIPTION FEATURES (continued) CS5842 is a TFT-LCD timing controller, which is applicable to 8-bit data XGA (1024*768), SXGA (1280*1024). CS5842 can update the response timing for

fg7000

Abstract: AOI2222 AOI44 AOI123 MXL 603 OAI112 AOI33 4an4 YF04 AOI13
Contextual Info: FG7000 SERIES DATABOOK 1999 FG73A_B HOLTEK SEMICONDUCTOR INC. TABLE OF CONTENTS
                         

2N6350

Abstract: 2N6351 2N6353 2N6352 JANTX 2N6351 2N635 JANTX 2N6352 r6e2 JANTX 2n ze 003 ic
Contextual Info: JAN JAN JAN JAN POWER DARLINGTONS 5 Amp, 150V, NPN & JANTX & JANTX & JANTX & JANTX 2N6350 2N6351 2N6352 2N6353 D E S C R IP T IO N FEATURES • H igh Current Gain: up to 2000 min. @ lc = 5A • Low Saturation Voltage: as low as 1.5V max. @ lc = 2A • Peak Current: to 10A

Contextual Info: JANS_2N3057A RADIATION HARDENED LOW POWER NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/391 Qualified Levels: JANSM, JANSD, JANSP, JANSL, and JANSR DESCRIPTION This RHA level 2N3057A NPN Silicon Transistor device is military qualified up to a JANSR level for high-reliability applications requiring a radiation hardened device. Microsemi also

10-REV

Abstract: AD8003 10UF
Contextual Info: Evaluation Board User Guide UG-022 One Technology Way • P.O. Box 9106 • Norwood, MA 02062-9106, U.S.A. • Tel: 781.329.4700 • Fax: 781.461.3113 • www.analog.com AD8003 Evaluation Board FEATURES Enables quick breadboarding/prototyping User-defined circuit configuration

test 2N3700

Abstract: 2n3019 equivalent
Contextual Info: 2N3700 Available on commercial versions Low Power NPN Silicon Transistor Qualified per MIL-PRF-19500/391 Qualified Levels: JAN, JANTX, JANTXV, and JANS DESCRIPTION This 2N3700 NPN transistor comes in a hermetically sealed metal TO-18 package and is military qualified for high-reliability applications.

2N3700UB

Abstract: 2N3700
Contextual Info: 2N3700UB Available on commercial versions Low Power NPN Silicon Transistor Qualified per MIL-PRF-19500/391 Qualified Levels: JAN, JANTX, JANTXV, and JANS DESCRIPTION This 2N3700UB NPN ceramic surface mount device is military qualified for high-reliability

2N3057A

Contextual Info: JANS_2N3057A RADIATION HARDENED LOW POWER NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/391 Qualified Levels: JANSM, JANSD, JANSP, JANSL, and JANSR DESCRIPTION This RHA level 2N3057A NPN Silicon Transistor device is military qualified up to a JANSR level for high-reliability applications requiring a radiation hardened device. Microsemi also

Contextual Info: 2N6352 and 2N6353 NPN Darlington Power Silicon Transistor Available on commercial versions Qualified per MIL-PRF-19500/472 Qualified Levels: JAN, JANTX, and JANTXV DESCRIPTION This high speed NPN transistor is military qualified up to the JANTXV level. Important: For the latest information, visit our website http://www.microsemi.com.

2n3019 equivalent

Abstract: 2N3019
Contextual Info: JANS_2N3019 and JANS_2N3019S Qualified Levels: JANSM, JANSD, JANSP, JANSL, and JANSR RADIATION HARDENED LOW POWER NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/391 DESCRIPTION This RHA level 2N3019 and 2N3019S NPN leaded metal device is RAD hard qualified for

test 2N3700

Contextual Info: JANS_2N3700 Qualified Levels: JANSM, JANSD, JANSP, JANSL, JANSR and JANSF RADIATION HARDENED LOW POWER NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/391 DESCRIPTION This NPN leaded metal device is RAD hard qualified for high-reliability applications. Microsemi

2N6350 equivalent

Abstract: 2N6352 2N6351 2N6353 2N6350 JANTX 2N6351 JAN 2N6351
Contextual Info: INCH POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 9 January 2007. MIL-PRF-19500/472E 9 October 2007 SUPERSEDING MIL-PRF-19500/472D 9 May 2006 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DARLINGTON TRANSISTOR, NPN, SILICON,

Transistor Array differential amplifier

Abstract: transistor array high speed G141C UPA102G
Contextual Info: UPA102B UPA102G TRANSISTOR ARRAY FEATURES_ • TWO BUILT-IN DIFFERENTIAL AMPLIFIER CIRCUITS: 9 GHz Single Transistors • OUTSTANDING hre LINEARITY • TWO PACKAGE OPTIONS: UPA102B: Superior thermal dissipation due to studded 14-pin ceramic package

transistor z3m

Abstract: Z3M IC "Z3M" z3m Transistor Z3M g transistor array high speed
Contextual Info: UPA104B UPA104G TRANSISTOR ARRAY CONNECTION DIAGRAM FEATURES 9 GHz CONFIGURABLE TRANSISTOR BASED OR/ NOR CIRCUITRY Top view UPA104B 14 13 12 11 10 9 OUTSTANDING hre LINEARITY T W O PACKAGE OPTIONS: UPA104B: Superior thermal dissipation due to studded ceramic package