E2360 Search Results

Contextual Info: IBM11 D1360Q IBM11 E1360Q 1 M/2M X IBM11D2360Q IBM11 E2360Q 36 DRAM Module Features • 72-Pin Single-In-Line Memory Module • Performance: -60 : -70 *RAC ; R A S A c c e s s T im e 60 ns tcAc C A S A c c e s s T im e 15ns : 20ns • Single 5V, + 0.5V Power Supply

Contextual Info: 39 RADI A L L 6GHz TECHNICAL DATA SHEET QMA LATCHING R573 E23600 S.P.6T. Page 1/ 2 SWITCH OPTIONS : R F CHARACTERISTICS NUMBER OF WAYS FREQUENCY RANGE IMPEDANCE :6 :0 - 6 GHz :50 Ohms FREQUENCY GHz V.S.W.R <= INSERT. LOSS <= ISOLATION 0 - 3 1.20 1 3 - 6

Contextual Info: IB M 11 D 2360ED IB M 11 E2360E D 2M x 36 O R A M M odule P relim in ary Features • 72 -P in S in g le-ln -L in e M em o ry M odule • Perform ance: ÌRAC R A S A c ce s s T im e -7 0 70ns C A S A c ce s s T im e 15ns 20ns tAA A c ce s s T im e F ro m A ddre s s

Contextual Info: IB M 1 1 D 1 3 6 0 E IB M 1 1 D 2 3 6 0 E IB M 1 1 E 1 3 6 0 E IB M 1 1 E 2 3 6 0 E 1M/2M x 36 DRAM Module Features • 72-Pin Single-In-Line Memory Module • Performance: -60 -70 I : tRAc i RAS Access Time 60ns ; tcAc : CAS Access Time 15ns 70ns I I S 18ns j

IEC 60947-4-1 for ABB

Abstract: ABB Magnetic contactor IEC 60947-4-1 50/60HZ abb A 16-30-10 CAL 5-11 ABB abb al 26-30-01 TRANSISTOR R1002 transistor r1010 R1004 transistor ABB AL9 entrelec diode
Contextual Info: Main Catalogue Low Consumption d.c. Operated Contactors AL Contactors NL Contactor Relays 80 1SBC141135C0301 ABB Entrelec AL 9 . AL 40 Contactors NL. Contactor Relays d.c. Operated Contents Ordering details 3-pole Contactors – AL. screw and spring terminals . 5

A/TDA 7977

Contextual Info: IB M 1 1 D 1 3 6 0 E IB M 1 1 E 1 3 6 0 E IB M 1 1 D 2 3 6 0 E IB M 1 1 E 2 3 6 0 E 1M/2M x 36 DRAM Module Features • 72-Pin Single-ln-Line Memory Module • Performance: -60 -70 tRAC RAS Access Time 60ns 70ns tcAC CAS Access Time 15ns 18ns tAA Access Time From Address

MA7041

Abstract: 1MX1
Contextual Info: IB M 11 D2360BD IB M E2360BD 2M x 36 D R A M M odule Features • Low active current dissipation • All inputs & outputs are fully TTL & CM O S compatible • Fast Page Mode access cycle • Refresh Modes: RAS-Only and CBR • 1024 refresh cycles distributed across 16ms

Contextual Info: IBM11D1360Q IBM11E1360Q IBM11D2360Q E2360Q 1M/2M x 36 DRAM Module Features • 72-Pin Single-In-Line Memory Module • Performance: -60 -70 : W c ; RAS Access Time 60ns 70ns I tcAC i CAS Access Time 15ns 20ns 30ns 35ns j Iaa !Access Time From Address

Contextual Info: IBM11D1360E1M 10/10, 5.0V, Sn/PbMMDS25DSU-001021620. x 36 QC10/10, 5.0V, Sn/PbMMDS25DSU-001021620. IBM11E1360E1M x 36 QC10/10, E2360E2M 5.0V, AuMMDS25DSU-001021620. x 36 QC10/10, 5.0V, Au MMDS25DSU-001021620. IBM11D2360E2M x 36 QC IBM11D1360E IBM11D2360E

MPC5516

Contextual Info: Freescale Semiconductor Mask Set Errata MPC551X_REVA Rev. 23 OCT 2012 Mask Set Errata for Mask REVA Introduction This report applies to mask REVA for these products: • MPC551X ID before 15 MAY 2008 ID from 15 May 2008 to 30 JUNE 2010 ID after 1 JULY 2010

E308602

Abstract: ta 8659 n ul2464 e120k E115256 37143 lf 8659 marking AR5T 8396H CAT 7551
Contextual Info: REV. DATE DESCRIPTION AO ECNNO 2005/09/09 NEW DRAWING ISSUE r i3 CABLE1 JL P1 16 P2 x; -CABLE2 15 16 15 20± 3 20± 3 150±10 PIN OUT PIN OUT CABLE1 (CABLE2) P1 1 3 I P2 DOC 9- %/m8- « 10- P2 5 1 P1 5 3 6 2 11 4 12 12 7 13 13 9 14 8 10 M. 6 11 14 15

Contextual Info: IBM11D2360ED2M x 36 QC10/10, 5.0V, Sn/Pb. E2360ED2M x 36 QC10/10, 5.0V, Au . IBM11D1360Q IBM11D2360Q IBM11E1360Q E2360Q 1M/2M x 36 DRAM Module Features • Single 5V, ± 0.5V Power Supply • All inputs & outputs are fully TTL & CMOS compatible • Low active current dissipation

POWER TRANSFORMER E154515

Abstract: scheme e131175 sampo E159656 foxconn e253117 e131175 XEPEX E140166 sony bando power transformer power transformer e190246 tamradio transformer e199273
Contextual Info: 10129 LIST OF COMPANY IDENTIFICATIONS The List of Company Identifications contains the trade names, trademarks, or other designations authorized for use in lieu of these Company names. ‘‘ ’’ — 2CS SRL ’’ — ACT CO LTD ‘‘ ‘‘ ’’ — 3E HK LTD

1829pf

Contextual Info: IBM11D1360Q1M 10/10, 5.0V, Sn/PbMMDS25DSU-001023221. x 36 QC10/10, 5.0V, Sn/PbMMDS25DSU-001023221. IBM11E1360Q1M x 36 QC10/10, E2360Q2M 5.0V, Au MMDS25DSU-001023221. x 36 QC10/10, 5.0V, Au MMDS25DSU-001023221. IBM11D2360Q2M x 36 QC IBM11D1360Q IBM11D2360Q

Contextual Info: IBM11D2360ED2M x 36 QC10/10, 5.0V, Sn/Pb. E2360ED2M x 36 QC10/10, 5.0V, Au . IBM11D1360E IBM11D2360E IBM11E1360E E2360E 1M/2M x 36 DRAM Module Features • 72-Pin Single-In-Line Memory Module • Performance: -60 -70 tRAC RAS Access Time 60ns 70ns

TRANSISTOR tip122 CHN 949

Abstract: E2955T BD706 TU F 13003 13003 Transistor NPN Power TO 126 transistor E2955T construction linear amplifier 2sc1945 LA 4301 8d679 transistor bf 175
Contextual Info: A lph an u m eric Index and C ross R eference 1 S elector G uide 2 D ata Sheets 3 Leadform and • M ounting H ardw are m A pp lications Literature 5 Chipscretes, Designers’, Duowatt, EpiBase, PowerBase, PowerTap, SUPERBRIDGES, Surmetric, Switchmode, Thermopad, TMOS, Thermowatt, Unibloc, and Uniwatt are trademarks of Motorola Inc.