IBM11D2360E Search Results

D2320B

Contextual Info: IBM11D2360EA IBM11E2360EA 2M x 36 DRAM Module Features • 72 -P in S ing le-In -L ine M em o ry M odule • Perform ance: -60 -70 W c RAS Access Time 60ns 70ns tcAC CAS Access Time 15ns 20ns ÏAA Access Time From Address 30ns 35ns *RC Cycle Time 110ns 130ns

Contextual Info: IBM11D1360E1M 10/10, 5.0V, Sn/PbMMDS25DSU-001021620. x 36 QC10/10, 5.0V, Sn/PbMMDS25DSU-001021620. IBM11E1360E1M x 36 QC10/10, IBM11E2360E2M 5.0V, AuMMDS25DSU-001021620. x 36 QC10/10, 5.0V, Au MMDS25DSU-001021620. IBM11D2360E2M x 36 QC IBM11D1360E IBM11D2360E

32MB SIMM

Contextual Info: IBM11D2360ED2M x 36 QC10/10, 5.0V, Sn/Pb. IBM11E2360ED2M x 36 QC10/10, 5.0V, Au . IBM11D4360B IBM11D8360B IBM11E4360B IBM11E8360B 4M/8M x 36 DRAM Module Features • 72-Pin JEDEC Standard Single-In-Line Memory Module • Performance: -60 -70 tRAC RAS Access Time

4346-01

Contextual Info: IBM11D2360ED2M x 36 QC10/10, 5.0V, Sn/Pb. IBM11E2360ED2M x 36 QC10/10, 5.0V, Au . IBM11D1365E IBM11D2365E 1M/2M x 36 DRAM Module Features • 72-Pin Single-In-Line Memory Module • Performance: -60 -70 tRAC RAS Access Time 60ns 70ns tCAC CAS Access Time 15ns

Contextual Info: IBM11D2360ED2M x 36 QC10/10, 5.0V, Sn/Pb. IBM11E2360ED2M x 36 QC10/10, 5.0V, Au . IBM11D1360Q IBM11D2360Q IBM11E1360Q IBM11E2360Q 1M/2M x 36 DRAM Module Features • Single 5V, ± 0.5V Power Supply • All inputs & outputs are fully TTL & CMOS compatible • Low active current dissipation

Contextual Info: IBM11D2360ED2M x 36 QC10/10, 5.0V, Sn/Pb. IBM11E2360ED2M x 36 QC10/10, 5.0V, Au . IBM11D1360E IBM11D2360E IBM11E1360E IBM11E2360E 1M/2M x 36 DRAM Module Features • 72-Pin Single-In-Line Memory Module • Performance: -60 -70 tRAC RAS Access Time 60ns 70ns

8mx32 simm 72 pin

Abstract: 32MB SIMM
Contextual Info: IBM11D2360ED2M x 36 QC10/10, 5.0V, Sn/Pb. IBM11E2360ED2M x 36 QC10/10, 5.0V, Au . IBM11D4360B IBM11D8360B IBM11E4360B IBM11E8360B 4M/8M x 36 DRAM Module Features • High Performance CMOS process • Single 5V, ± 0.5V Power Supply • All inputs & outputs are fully TTL & CMOS

Contextual Info: IB M 1 1 D 1 3 6 0 E IB M 1 1 D 2 3 6 0 E IB M 1 1 E 1 3 6 0 E IB M 1 1 E 2 3 6 0 E 1M/2M x 36 DRAM Module Features • 72-Pin Single-In-Line Memory Module • Performance: -60 -70 I : tRAc i RAS Access Time 60ns ; tcAc : CAS Access Time 15ns 70ns I I S 18ns j

A/TDA 7977

Contextual Info: IB M 1 1 D 1 3 6 0 E IB M 1 1 E 1 3 6 0 E IB M 1 1 D 2 3 6 0 E IB M 1 1 E 2 3 6 0 E 1M/2M x 36 DRAM Module Features • 72-Pin Single-ln-Line Memory Module • Performance: -60 -70 tRAC RAS Access Time 60ns 70ns tcAC CAS Access Time 15ns 18ns tAA Access Time From Address

64mb edo dram simm

Abstract: 8Mb SDRAM 5.0v memory 2mb 72-pin simm simm72 IBM11S43 ram 168 pin 8k refresh simm DIMM 72 pin out edo dram 72-pin simm
Contextual Info: Ta ble of C o n te n t s Go To 4Mb DRAM s , V RAMs & SGRAM s Go To 16Mb DRAMs & SDRAMs & 64Mb DRAM s Go To D RAM 72 Pin Mod u l e s Go To D RAM 72 & 144 Pin Small Ou tline Mod u l e s Go To D RAM 168 Pin Mod u l e s Go To Sy n ch ronous SRAM s Go To S RAM Mod u l e s

11E23

Contextual Info: IBM Table of Contents Alphanumeric Index. 11 General Information. 15

Contextual Info: IB M 11 D 2360ED IB M 11 E2360E D 2M x 36 O R A M M odule P relim in ary Features • 72 -P in S in g le-ln -L in e M em o ry M odule • Perform ance: ÌRAC R A S A c ce s s T im e -7 0 70ns C A S A c ce s s T im e 15ns 20ns tAA A c ce s s T im e F ro m A ddre s s

2m x 32 SRAM SIMM

Abstract: IBM11M4735CB SIMM 72 IBM0116400M IBM038329P IBM025161L dimm 168
Contextual Info: Table of Contents Index Numbering Guides Part Number Type Org A dd r Voltage IBM0116160 IBM0116160B IBM0116160M IBM0116160P IBM0116165 IBM0116165B IBM0116165M IBM0116165P IBM0116400 IBM0116400B IBM0116400M IBM0116400P IBM0116405 IBM0116405B IBM0116405M IBM0116405P