E2 MARKING Search Results

Package Information

Contextual Info: Package Information www.vishay.com Vishay Siliconix PowerPAK MLP66-40 Case Outline 2x 5 6 Pin 1 dot by marking K1 0.08 C A 0.10 C A D A K2 A1 D2-1 0.41 A2 31 40 2x 30 1 21 10 E2-3 E2-1 4 E 0.10 M C A B MLP66-40 6 mm x 6 mm (Nd-1)X e ref. E2-2 e 0.10 C B

5996

Abstract: marking 2x
Contextual Info: Package Information Vishay Siliconix PowerPAK MLP44-28L CASE OUTLINE 5 6 PIN 1 Dot by Marking 2x 2x K1 0.10 C A D A D2-3 PIN#1 Identification R0.20 D2-1 0.10 C B 1 E 2 e 28L T/SLP 4.0 mm x 4.0 mm 3 E2-2 (Ne-1)X e Ref. K2 E2-1 0.4000 b CA B E2-3 L D2-2

MLP66-40

Contextual Info: Package Information Vishay Siliconix PowerPAK MLP66-40 CASE OUTLINE K1 2x 5 6 Pin 1 dot by marking 0.10 C A D A K2 0.08 C A A1 Pin #1 dent D2-1 0.41 A2 31 40 2x 30 1 21 10 E2-3 E2-1 4 E 0.10 M C A B MLP66-40 6 mm x 6 mm (Nd-1)X e ref. E2-2 e 0.10 C B B

TLE4954C-E2

Abstract: TLE4954
Contextual Info: TLE4954C/51C Differential Hall Effect Transmission Speed Sensors TLE4954C TLE4954C-E1 TLE4954C-E2 TLE4954C-E4 TLE4954CB TLE4954CB-E1 TLE4954CB-E2 TLE4951C TLE4951CB Product Information 2013-10-15 Sense & Control TLE4954C/51C Table of Contents Table of Contents

Contextual Info: Package Information www.vishay.com Vishay Siliconix PowerPAK MLP55-31L Case Outline for SiC620 K12 K1 D2- 1 K8 Nd-1 xe ref. E2- 2 8 16 b L B K10 K3 4 (5 mm x 5 mm) e E MLP55-31L 1 E2- 3 0.10 m C A B 23 31 K6 24 E2-4 A2 0.10 C B K4 D2-4 F2 F1 D 2x D2-5

Package Information

Contextual Info: Package Information www.vishay.com Vishay Siliconix PowerPAK MLP55-31L Double Cooling Case Outline A2 E2-1 1 e E2-2 E2- 3 N1 4 N2 E 23 K3 23 1 0.1 M C A B 0.1 C B 31 16 16 8 L 8 b B Nd-1 Xe ref. 2x K4 D2-4 K8 24 A1 K6 24 K5 A D 31 K11 A K12 K1 D2-1 K10

776441-1

Contextual Info: Inductive sensor NBB0,6-3M22-E2 Dimensions 22 16 Ø3 LED Model Number NBB0,6-3M22-E2 Features • • 0.6 mm embeddable Miniature design Connection BN BK BU L+ L- Technical Data General specifications Switching element function Rated operating distance sn

IEC 60947-5-2 INDUCTIVE SENSOR

Contextual Info: Inductive sensor NBB0,8-4M25-E2 Dimensions 25 18 ø4 LED Model Number NBB0,8-4M25-E2 Technical Data Features • 0.8 mm embeddable Connection BN BK BU L+ L- Accessories BF 4 Mounting flange, 4 mm General specifications Switching element function Rated operating distance

BCP70M

Abstract: SCT595
Contextual Info: BCP70M PNP Silicon AF Power Transistor 4 • For AF driver and output stages • High collector current 5 • Low collector-emitter saturation voltage 3 2 1 VPW05980 Type Marking BCP70M PBs Pin Configuration Package 1 = E1 2 = C 3 = E2 4 = B 5 = C SCT595 Maximum Ratings E1 and E2 connected externaly

BCP70M

Abstract: SCT595
Contextual Info: BCP70M PNP Silicon AF Power Transistor 4
For AF driver and output stages
High collector current 5
Low collector-emitter saturation voltage 3 2 1 VPW05980 Type Marking BCP70M PBs Pin Configuration Package 1 = E1 2 = C 3 = E2 4 = B 5 = C SCT595 Maximum Ratings E1 and E2 connected externaly

SCT-595

Abstract: W331 marking E1 SCT-595
Contextual Info: BCP 70M PNP Silicon AF Power Transistor 4
For AF driver and output stages
High collector current 5
Low collector-emitter saturation voltage 3 2 1 VPW05980 Type Marking BCP 70M PBs Pin Configuration Package 1 = E1 2 = C 3 = E2 4 = B 5 = C SCT-595 Maximum Ratings E1 and E2 connected externaly

Contextual Info: FJYF2906 FJYF2906 PNP Multi-Chip General Purpose Amplifier C1 E1 • Collector-Emitter Voltage: VCEO = 40V • Amplifier and Switching Application • E2 is on pin 1 C2 B1 B2 Pin1 E2 SOT-563F Mark: S1 Absolute Maximum Ratings TA=25°C unless otherwise noted

Contextual Info: FMB200 PNP Multi-Chip General-Purpose Amplifier Description This device is designed for general-purpose amplifier applications at collector currents to 300 mA. Sourced from Process 68. Block Diagram C2 E1 C2 B2 E1 E2 C1 B1 C1 B2 E2 pin #1 B1 SuperSOT -6

Contextual Info: FMBA56 PNP Multi-Chip General-Purpose Amplifier Description This device is designed for general-purpose amplifier applications at collector currents to 300 mA. Sourced from Process 73. Block Diagram C2 E1 C2 B2 E1 E2 C1 B1 C1 B2 E2 pin #1 B1 SuperSOT -6

DIN 6784 c1

Abstract: BCR108S BFS17S E6327 VPS05604
Contextual Info: BFS17S NPN Silicon RF Transistor 4 • For broadband amplifiers up to 1 GHz at collector 5 6 currents from 1 mA to 20 mA 2 C1 E2 B2 6 5 4 3 1 VPS05604 TR2 TR1 1 2 3 B1 E1 C2 EHA07196 Type Marking BFS17S MCs Pin Configuration Package 1=B1 2=E1 3=C2 4=B2 5=E2 6=C1 SOT363

IEC 60947-5-2 INDUCTIVE SENSOR

Abstract: AISI303 3 pin IR sensor pin connection 14305 CCC marking
Contextual Info: Inductive sensor NMB15-30GM65-E2-V1 Dimensions 50 55 65 40 5 2,5 M30x1,5 36 LED M12x1 Model Number NMB15-30GM65-E2-V1 Features • • • 15 mm flush Stainless steel sensing face Increased operating distance Connection 1 L+ 4 3 L- Pinout 1 4 2 3 Technical Data

BFS17S

Abstract: VPS05604 NPN marking MCs
Contextual Info: BFS17S NPN Silicon RF Transistor 4
For broadband amplifiers up to 1 GHz at collector 5 6 currents from 1 mA to 20 mA 2 C1 E2 B2 6 5 4 3 1 VPS05604 TR2 TR1 1 2 3 B1 E1 C2 EHA07196 Type Marking BFS17S MCs Pin Configuration Package 1=B1 2=E1 3=C2 4=B2 5=E2 6=C1 SOT363

Contextual Info: BFS17S NPN Silicon RF Transistor 4
For broadband amplifiers up to 1 GHz at collector 5 6 currents from 1 mA to 20 mA 2 C1 E2 B2 6 5 4 3 1 VPS05604 TR2 TR1 1 2 3 B1 E1 C2 EHA07196 Type Marking BFS17S MCs Pin Configuration Package 1=B1 2=E1 3=C2 4=B2 5=E2 6=C1 SOT363

VPS05604

Abstract: bfs 11
Contextual Info: BFS 17S NPN Silicon RF Transistor 4
For broadband amplifiers up to 1 GHz at collector 5 6 currents from 1 mA to 20 mA 2 C1 E2 B2 6 5 4 3 1 VPS05604 TR2 TR1 1 2 3 B1 E1 C2 EHA07196 Type Marking BFS 17S MCs Pin Configuration Package 1=B1 2=E1 3=C2 4=B2 5=E2 6=C1 SOT-363

Contextual Info: CM200CU-12NFH Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com Dual IGBT NFH-Series Module 200 Amperes/600 Volts TC MEASUREMENT POINT A D N M K C2E1 K E2 F E C1 E2 G2 S B G1 E1 H G F Y P - NUTS (3 TYP) Q - (2 TYP)

Contextual Info: Package outline LGA274: land grid array package; 274 lands SOP022-1 C pin A1 index 1.5 0.25 max (max) C 1.5 (max) 0.25 (max) detail X D e e1 A alignment hole for testing Ø 1.0 +0.1/-0.0 b B e2 e1 E cover e2 frame alignment hole for testing Ø 1.0 +0.1/-0.0

NBB20-L2-E2-V1

Abstract: sensor 13 L IEC 60947-5-2 INDUCTIVE SENSOR M12 connector 4pin
Contextual Info: Inductive sensor NBB20-L2-E2-V1 Dimensions LED gn LED ye 7 M12 x 1 20 30 28 LED ye 4 67 LED gn 40 40 Model Number NBB20-L2-E2-V1 5.5 • • • • • 60 Basic series 20 mm embeddable 3-wire DC Quick mounting bracket 4-way LED indicator Connection 1 L+ 4

T-1233

Abstract: T1233-1 E k m QFN 3X3 2D22 T1233 AAAA Marking marking aaaa MO220 weed T12333
Contextual Info: NE - 1 X e E MARKING E/2 D2/2 (ND - 1) X e D/2 AAAA e CL D D2 k CL b 0.10 M C A B E2/2 L E2 CL 0.10 C CL 0.08 C A A2 A1 L L e e PACKAGE OUTLINE 12, 16L THIN QFN, 3x3x0.8mm 21-0136 F 1 2 PKG 12L 3x3 16L 3x3 REF. MIN. NOM. MAX. MIN. NOM. MAX. A 0.70 0.75 0.80

Contextual Info: Bare die outline WLCSP9: wafer level chip-size package; 9 bumps; 1.26 x 1.89 x 0.22 mm OM6254U D e e1 y e2 E x 0,0 X Y 2 P1 P2 A1 detail X A2 A Dimensions Unit(1) mm A A1 A2 max nom 0.215 0.015 0.2 min D(1) E(1) detail Y e e1 1.26 1.89 1.05 0.22 P1 e2 0.9