MKP1848
Abstract: capacitor MKP
Contextual Info: MKP1848 DC Link Vishay Roederstein Metallized Polypropylene Film Capacitor DC Capacitor MKP Type W I W I h Marking h Ø dt P1 ± 0.4 - PCM 27.5 mm P1 ± 0.5 - PCM ≥ 37.5 mm 6-2 Ø dt 6-1 P1 ± 0.5 P2 ± 0.5 Dimensions in millimeters FEATURES Ø dt ± 10 % of standard diameter specified
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mkp184818-jul-08capacitor mkp |
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77V1254
Abstract: 77V1264
Contextual Info: 77V1264L200 Device Errata Notes Supplemental Information The revision of the 77V1264L200 can be determined visually from the date code shown on the top marking. The date code is the third line of text. ∫ dt 77V1254 77V1264 L200PG WByywwA XCyywwA Revision
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77v1264l20077v125477v1264l200pg |
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TRANSISTOR SMD CODE 6.8
Abstract: tbd 380 DIODE smd marking Ag MARKING CODE TBD TRANSISTOR SMD MARKING CODE ag SPBX2N60S5 SPPX2N60S5
Contextual Info: SPPX2N60S5 SPBX2N60S5 Target data sheet Cool MOS Power Transistor •N-Channel •Enhancement mode •Ultra low gate charge •Avalanche rated •dv/dt rated •150°C operating temperature 1 2 3 G D S Type VDS ID RDS on Marking Package Ordering Code SPPX2N60S5
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sppx2n60s5spbx2n60s5x2n60s5p-to220-3-1+7p-to263-3-221/oct/1998transistor smd code 6.8tbd 380diode smd marking agmarking code tbdtransistor smd marking code ag
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smd marking 58a
Abstract: 80N10L INFINEON PART MARKING to220 pcb footprint SPI80N10L SPP80N10L 80N10 SMD marking code 58A
Contextual Info: SPI80N10L SPP80N10L SIPMOS Power-Transistor Product Summary Feature N-Channel Enhancement mode Logic Level 175°C operating temperature Avalanche rated dv/dt rated VDS Package Ordering Code Marking SPP80N10L PG-TO220-3-1 Q67042-S4173 80N10L
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spi80n10lspp80n10lpg-to262-3-1pg-to220-3-1+7q67042-s417380n10lsmd marking 58ainfineon part markingto220 pcb footprint80n10smd marking code 58a
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DIODE smd marking Ag
Abstract: MARKING CODE TBD TRANSISTOR SMD MARKING CODE ag P-TO251-3-1 P-TO252 SPDX6N60S5 SPUX6N60S5 transistor smd marking Ag TRANSISTOR SMD MARKING CODE GFs
Contextual Info: SPUX6N60S5 SPDX6N60S5 Target data sheet Cool MOS Power Transistor •N-Channel •Enhancement mode •Ultra low gate charge •Avalanche rated •dv/dt rated •150°C operating temperature 1 2 3 G D S Type VDS ID RDS on Marking Package Ordering Code SPUX6N60S5
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spux6n60s5spdx6n60s5x6n60s5p-to251-3-1+7p-to25221/oct/1998diode smd marking agmarking code tbdtransistor smd marking code agtransistor smd marking agtransistor smd marking code gfs
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77V106
Abstract: 77V107 YB device marking Code
Contextual Info: 77V107 Device Errata Notes Supplemental Information The revision/die stepping of the 77V107 can be determined visually from the date code shown on the top marking. The date code is the third line of text. ∫ dt 77V106 77V107 L25TF <\\ZZF Revision/Stepping
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77v10777v106l25tfyb device marking code |
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Q67042-S4057
Abstract: Q67042-S4058 INFINEON PART MARKING marking code br 39 SMD SPB100N03S2-03 SPP100N03S2-03 PN0303
Contextual Info: SPP100N03S2-03 SPB100N03S2-03 Preliminary data OptiMOS=Power-Transistor Product Summary Feature N-Channel Enhancement mode 175°C operating temperature Avalanche rated dv/dt rated VDS 30 RDS on max. SMD version 3 ID Package Ordering Code Marking
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spp100n03s2-03spb100n03s2-03p-to263-3-2p-to220-3-1+5q67042-s4058pn0303q67042-s4057infineon part markingmarking code br 39 smd
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77V1254
Abstract: L200PG 77V126L200
Contextual Info: 77V126L200 Device Errata Notes Supplemental Information The revision of the 77V126L200 can be determined visually from the date code shown on the top marking. The date code is the third line of text. ∫ dt 77V1254 L200PG WByywwA XCyywwA Revision Date Code
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77v126l20077v1254l200pg |
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2N06LH5
Abstract: DIODE H5 SMD Q67060-S6055 S6054 smd diode H5 ANPS071E SPB80N06S2L-H5 SPP80N06S2L-H5 2N06
Contextual Info: SPP80N06S2L-H5 SPB80N06S2L-H5 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS • Enhancement mode R DS on 55 ID • 175°C operating temperature • dv/dt rated Package Ordering Code Marking SPP80N06S2L-H5 P- TO220 -3-1 Q67060-S6054
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spp80n06s2l-h5spb80n06s2l-h5q67060-s6054q67060-s6055+82n06lh5bspp80n06s2l-h5bspb80n06s2l-h5diode h5 smds6054smd diode h5anps071e2n06
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47N10
Abstract: SPB47N10 SPI47N10 SPP47N10 V550-12 Q67060-S7431
Contextual Info: Preliminary data SPI47N10 SPP47N10,SPB47N10 SIPMOS Power-Transistor Product Summary Feature N-Channel Enhancement mode 175°C operating temperature Avalanche rated dv/dt rated VDS P-TO262-3-1 Package Ordering Code Marking SPP47N10 P-TO220-3-1
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spi47n10spp47n10spb47n10p-to262-3-1+6p-to263-3-2p-to220-3-1q67040-s418347n10v550-12q67060-s7431
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77V106
Abstract: YB device marking Code
Contextual Info: 77V106 Device Errata Notes Supplemental Information The revision/die stepping of the 77V106 can be determined visually from the date code shown on the top marking. The date code is the third line of text. ∫ dt 77V106 L25TF <\\ZZF Revision/Stepping Date Code
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77v106l25tfyb device marking code |
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Q67040-S4440
Abstract: 11N80C3 11N8
Contextual Info: SPW11N80C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 800 V RDS on 0.45 Ω ID 11 A P-TO247 • Periodic avalanche rated • Extreme dv/dt rated Type Package Ordering Code Marking
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spw11n80c3p-to247q67040-s444011n80c3+111n8
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Contextual Info: IDT77V222 Micro ABR SAR Device Errata Notes Supplemental Information The revision of the 77V222 Micro ABR SAR can be determined visually from the date code shown on the top marking. The date code is the third line of text. ∫ dt 77V222 Data Code L155PG X9901A
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idt77v22277v222l155pgx9901a |
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77V1254
Contextual Info: 77V1254L25 Device Errata Notes Supplemental Information The revision of the 77V1254L25 can be determined visually from the date code shown on the top marking. The date code is the third line of text. ∫ dt 77V1254 L25PG DZyywwA Date Code “yyww_” indicates Year, Week & Assembly location
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77v1254l2577v1254l25pg |
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BSP123
Abstract: E6327 Q67000-S306
Contextual Info: Rev. 1.0 SIPMOS Small-Signal-Transistor BSP123 Feature Product Summary • N-Channel VDS • Enhancement mode RDS on • Logic Level ID • dv/dt rated 100 V 6 Ω 0.37 A SOT223 Type Package Ordering Code Tape and Reel Information Marking BSP123 SOT223
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bsp123ot223q67000-s306e6327 |
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77V1254
Abstract: 77V1254L25
Contextual Info: 77V1254L25 Device Errata Notes Supplemental Information The revision of the 77V1254L25 can be determined visually from the date code shown on the top marking. The date code is the third line of text. ∫ dt 77V1254 L25PG DZyywwA Date Code “yyww_” indicates Year, Week & Assembly location
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77v1254l2577v1254l25pg |
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10N10L
Abstract: Q67042-S4162 TRANSISTOR SMD MARKING CODE 42 Q67042-S4163 SPI10N10L SPP10N10L
Contextual Info: SPI10N10L SPP10N10L SIPMOS Power-Transistor Product Summary Feature N-Channel Enhancement mode Logic Level 175°C operating temperature Avalanche rated dv/dt rated VDS 100 RDS on 154 m ID 10.3 A PG-TO262-3-1 Type Package Ordering Code Marking
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spi10n10lspp10n10lpg-to262-3-1pg-to220-3-1+4q67042-s416310n10lq67042-s4162transistor smd marking code 42
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BSS138W
Abstract: D028 E6327 D003 SOT sws sot-323
Contextual Info: BSS138W SIPMOS Small-Signal-Transistor Product Summary Features • N-channel • Enhancement mode V DS 60 V R DS on ,max 3.5 Ω ID 0.28 A • Logic level • dv /dt rated SOT-323 Type Package Ordering Code Tape and Reel Information Marking BSS138W SOT-323
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bss138wot-323q67042-s4187e6327+5q67042-s4191e6433d028d003 sotsws sot-323
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SOT23 marking skS
Abstract: SKs SOT23 q67042-s4184 dd1270 BSS138N D023 D26 SOT23 marking code SKs marking SKs sot-23
Contextual Info: BSS138N SIPMOS Small-Signal-Transistor Product Summary Features • N-channel • Enhancement mode V DS 60 V R DS on ,max 3.5 Ω ID 0.23 A • Logic level • dv /dt rated SOT-23 Type Package Ordering Code Tape and Reel Information Marking BSS138N SOT-23
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bss138not-23q67042-s4184q67042-s4190+9e6327e6433sot23 marking skssks sot23dd1270d023d26 sot23marking code sksmarking sks sot-23
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SOT23 marking skS
Abstract: Q67042-S4184 diode sot-23 marking AG SKs SOT23 D023 BSS138N SKs 83 SKs TRANSISTOR E6327 marking code SKs
Contextual Info: BSS138N SIPMOS Small-Signal-Transistor Product Summary Features • N-channel • Enhancement mode V DS 60 V R DS on ,max 3.5 Ω ID 0.23 A • Logic level • dv /dt rated SOT-23 Type Package Ordering Code Tape and Reel Information Marking BSS138N SOT-23
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bss138not-23q67042-s4184e6327+9q67042-s4190e6433sot23 marking sksdiode sot-23 marking agsks sot23d023sks 83sks transistormarking code sks
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YB device marking Code
Contextual Info: 9 'HYLFH UUDWD 1RWHV 6XSSOHPHQWDO ,QIRU ,QIRUPDWLRQ PDWLRQ The revision/die stepping of the 77V106 can be determined visually from the date code shown on the top marking. The date code is the third line of text. ∫ dt 77V106 L25TF Yyywwc Revision/Stepping
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77v106l25tfyb device marking code |
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IDT77V222
Abstract: aal3
Contextual Info: IDT77V222 Micro ABR SAR De Device Er rata Notes Suppl upplement ental Infor mation The revision of the 77V222 Micro ABR SAR can be determined visually from the date code shown on the top marking. The date code is the third line of text. ∫ dt 77V222 Data Code
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idt77v22277v222l155pgx9901a+1aal3
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77V1253
Abstract: 77V1254
Contextual Info: 77V1253L25 Device Errata Notes Supplemental Information The revision of the 77V1253L25 can be determined visually from the date code shown on the top marking. The date code is the third line of text. ∫ dt 77V1253 77V1254 L25PG DZyywwA Date Code “yyww_” indicates Year, Week & Assembly location
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77v1253l2577v125377v1254l25pg |
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2N0623
Abstract: INFINEON PART MARKING to252 S7420 BSPD30N06S2-23 P-TO252 SPD30N06S2-23 k 940 S5025 2N062
Contextual Info: SPD30N06S2-23 Preliminary data OptiMOS=Power-Transistor Product Summary Feature N-Channel Enhancement mode 175°C operating temperature Avalanche rated dv/dt rated VDS 55 V RDS on 23 m ID 30 A P-TO252 Type Package Ordering Code Marking SPD30N06S2-23
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spd30n06s2-23p-to252q67060-s74202n0623+6bspd30n06s2-23infineon part marking to252s7420k 940s50252n062
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