DSS 706 Search Results

Contextual Info: P.C.B. LAYOUT . 2.54 ^ 1.0 -6-H& u • \ \ \ j 0— 0— 0CM CO Prod. No. CIRCUIT DIAGRAM 1 2 3 4 5 6 7 DSS DSS DSS DSS DSS DSS DSS DSS DSS DSS 8 701 702 703 704 705 706 707 708 709 710 N N N N N N N N N N No. of Pos. A 1 2 3 4 5 6 7 8 9 10 3.95 6.50 9.05

2sk1317

Abstract: Hitachi DSA002779
Contextual Info: 2SK1317 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • High breakdown voltage V DSS = 1500 V High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter and motor driver

VP0300B

Abstract: vishay LT VP0300L VP0300LS VQ2001J VQ2001P 70217
Contextual Info: _VP0300B/L/LS, VQ2001J/P Vishay Siliconix P-Channel Enhancement-Mode MOSFET Transistors PRODUCT SUMMARY Part Number V BR DSS M in (V ) rDS(on) Max (Q ) Id (A) V GS(th) (V ) VP0300B 2.5 @ VGS = —12 V - 2 to —4.5 -1.25 VP0300L

mosfet bs250

Abstract: BS250 TP0610L part marking for tp0610t BS250 datasheet VP0610T equivalent of BS250 TO-92-18RM VP0610L TP0610T
Contextual Info: TP0610L/T, VP0610L/T, BS250 P-Channel Enhancement-Mode MOSFET Transistors TP0610L TP0610T VP0610L VP0610T BS250 Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) TP0610L –60 10 @ VGS = –10 V –1 to –2.4 –0.18 TP0610T

VQ2001P

Contextual Info: VP0300L/LS, VQ2001J/P Vishay Siliconix P-Channel Enhancement-Mode MOSFET Transistors PRODUCT SUMMARY Part Number rDS on Max (W) VGS(th) (V) ID (A) VP0300L V(BR)DSS Min (V) 2.5 @ VGS = –12 V –2 to –4.5 –0.32 VP0300LS 2.5 @ VGS = –12 V –2 to –4.5

SUM110N10-09

Abstract: sum110n10
Contextual Info: SUM110N10-09 New Product Vishay Siliconix N-Channel 100-V D-S 200_C MOSFET FEATURES D TrenchFETr Power MOSFETS D 200_C Junction Temperature D New Package with Low Thermal Resistance PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 100 0.0095 @ VGS = 10 V

BS250

Abstract: mosfet bs250 VP0610T TP0610L TP0610T VP0610L
Contextual Info: TP0610L/T, VP0610L/T, BS250 Siliconix P-Ch Enhancement-Mode MOSFET Transistors TP0610L TP0610T VP0610L VP0610T BS250 PRODUCT SUMMARY PART NUMBER V BR DSS MIN (V) RDS(ON) MAX (W) VGS(TH) (V) ID (A) TP0610L –60 10 @ VGS = –10 V –1 to –2.4 –0.18 TP0610T

equivalent of BS250

Abstract: BS250 datasheet TA 7061 BS250 VP0610T part marking for tp0610t TO-92-18RM TP610L TP0610L TP0610T
Contextual Info: TP610L/T, VP0610L/T, BS250 P-Channel Enhancement-Mode MOS Transistors TP0610L TP0610T VP0610L VP0610T BS250 Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) TP0610L –60 10 @ VGS = –10 V –1 to –2.4 –0.18 TP0610T –60

VP0300B

Abstract: VQ2001P VP0300L VP0300LS VQ2001J
Contextual Info: VP0300B/L/LS, VQ2001J/P Vishay Siliconix P-Channel Enhancement-Mode MOSFET Transistors PRODUCT SUMMARY Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) VP0300B 2.5 @ VGS = –12 V –2 to –4.5 –1.25 VP0300L 2.5 @ VGS = –12 V –2 to –4.5

SUM110N10-09

Abstract: SUM110N10-09-E3
Contextual Info: SUM110N10-09 Vishay Siliconix N-Channel 100-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) 100 0.0095 at VGS = 10 V 110a • TrenchFET Power MOSFET • New Package with Low Thermal Resistance • 100 % Rg Tested Available

vp0300m

Abstract: VP0300B VP0300L VQ2001J VQ2001P 38283
Contextual Info: VP0300B/L/M, VQ2001J/P P-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) VP0300B 2.5 @ VGS = –12 V –2 to –4.5 –1.25 VP0300L 2.5 @ VGS = –12 V –2 to –4.5 –0.32 VP0300M

TP0202T

Contextual Info: TP0202T P-Channel Enhancement-Mode MOSFET Transistor Product Summary V BR DSS Min (V) –20 20 rDS(on) Max (W) VGS(th) (V) ID (A) 1.4 @ VGS = –10 V –1.3 to – 3 V –0.41 3.5 @ VGS = –4.5 V –1.3 to – 3 V –0.27 Features Benefits Applications D

VP0300M

Abstract: VP0300L
Contextual Info: VP0300B/L/M, VQ2001J/P P-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) VP0300B 2.5 @ VGS = –12 V –2 to –4.5 –1.25 VP0300L 2.5 @ VGS = –12 V –2 to –4.5 –0.32 VP0300M

SUM110N10-09

Abstract: SUM110N10-09-E3
Contextual Info: SUM110N10-09 Vishay Siliconix N-Channel 100-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) 100 0.0095 at VGS = 10 V 110a • TrenchFET Power MOSFET • New Package with Low Thermal Resistance • 100 % Rg Tested Available

SUM110N10-09

Abstract: SUM110N10-09-E3
Contextual Info: SUM110N10-09 Vishay Siliconix New Product N-Channel 100-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) 100 0.0095 at VGS = 10 V 110a • TrenchFET Power MOSFET • New Package with Low Thermal Resistance • 100 % Rg Tested

IXTP76N075

Abstract: 76n075
Contextual Info: Preliminary Technical Information TrenchMVTM Power MOSFET IXTA76N075T IXTP76N075T VDSS ID25 = = 75 V 76 A Ω 12 mΩ RDS on ≤ N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings V DSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ

Contextual Info: SUM110N10-09 Vishay Siliconix N-Channel 100-V D-S 200_C MOSFET FEATURES D D D D PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 100 0.0095 @ VGS = 10 V 110 a TrenchFETr Power MOSFET 200_C Junction Temperature New Package with Low Thermal Resistance 100% Rg Tested

TP0202T

Contextual Info: TP0202T P-Channel Enhancement-Mode MOSFET Transistor Product Summary V BR DSS Min (V) –20 rDS(on) Max (W) VGS(th) (V) ID (A) 1.4 @ VGS = –10 V –1.3 to – 3 V –0.41 3.5 @ VGS = –4.5 V –1.3 to – 3 V –0.27 Features Benefits Applications D D D

TA 7061

Abstract: TP0202T S4450
Contextual Info: TP0202T P-Channel Enhancement-Mode MOS Transistor Product Summary V BR DSS Min (V) –20 rDS(on) Max (W) VGS(th) (V) ID (A) 1.4 @ VGS = –10 V –1.3 to – 3 V –0.31 3.5 @ VGS = –4.5 V –1.3 to – 3 V –0.16 Features Benefits Applications D D D D

IXTP76N075T

Abstract: 76n075 76N075T ixtp76n075 IXTA76N075T 305v 76N07
Contextual Info: Preliminary Technical Information IXTA76N075T IXTP76N075T TrenchMVTM Power MOSFET = = VDSS ID25 75 V 76 A Ω 12 mΩ RDS on ≤ N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings V DSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ

Contextual Info: HiPerFET Power MOSFETs IXFK / IXFN 32N60 IXFK / IXFN 36N60 V DSS ^D25 600 V 600 V 32 A 36 A D DS on 0.25 Q 0.18 Q N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr TO-264 AA (IXFK) Preliminary data Symbol Test Conditions Maximum Ratings IXFK

Contextual Info: SUM110N10-09 Vishay Siliconix New Product N-Channel 40-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) 100 0.0095 at VGS = 10 V 110a • TrenchFET Power MOSFET • New Package with Low Thermal Resistance • 100 % Rg Tested

SUM110N10-09

Abstract: SUM110N10-09-E3
Contextual Info: SUM110N10-09 Vishay Siliconix N-Channel 100-V D-S 200_C MOSFET FEATURES D D D D PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 100 0.0095 @ VGS = 10 V 110 a TrenchFETr Power MOSFET 200_C Junction Temperature New Package with Low Thermal Resistance 100% Rg Tested

bs250

Abstract: mosfet bs250 tp0610lt VP0610T TP0610T
Contextual Info: TP0610L/T, VP0610L/T, BS250 P-Channel Enhancement-Mode MOSFET Transistors TP0610L TP0610T VP0610L VP0610T BS250 Product Summary Part N u m b e r V BR>DSS M in (V r DS(on) M a x (f ì) V GS(th) (V ) I d (A) TP0610L -60 10 @ V o s - -10 V -1 to -2.4 -0.18