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SUM110N10 Datasheets (8)

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Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
SUM110N10-08	Vishay Telefunken	N-Channel 100-V (D-S) 200C MOSFET	Original	PDF	40.28KB	5
SUM110N10-08 SPICE Device Model	Vishay	N-Channel 100-V (D-S) 200Â°C MOSFET	Original	PDF	174.51KB	3
SUM110N10-09	Vishay Intertechnology	N-Channel 100-V (D-S) 200Â°C MOSFET	Original	PDF	37.69KB	5
SUM110N10-09	Vishay Siliconix	N-Channel 100-V (D-S) 200C MOSFET	Original	PDF	61.07KB	5
SUM110N10-09	Vishay Siliconix	MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:100V; Continuous Drain Current, Id:110A; On-Resistance, Rds(on):9.5mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-263; Leaded Process Compatible:No	Original	PDF	100.59KB	6
SUM110N10-09-E3	Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 110A D2PAK	Original	PDF		8
SUM110N10-09-E3	Vishay Siliconix	N-Channel 100-V (D-S) 200C MOSFET	Original	PDF	61.06KB	5
SUM110N10-09 SPICE Device Model	Vishay	N-Channel 100-V (D-S) 200Â°C MOSFET	Original	PDF	202.07KB	3

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Vishay Intertechnologies SUM110N10-08 - Rail/Tube (Alt: SUM110N10-08)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	SUM110N10-08	Tube			800	1 - 10 - 100 - 1000 $3.46 10000 $3.24	Buy Now
Vishay Intertechnologies SUM110N10-09-E3 - Tape and Reel (Alt: SUM110N10-09-E3)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	SUM110N10-09-E3	Tape & Reel		52 Weeks	800	1 - 10 - 100 - 1000 $2.26 10000 $2.15	Buy Now
Mouser Electronics	SUM110N10-09-E3					1 $6.26 10 $3.57 100 $3.02 1000 $2.41 10000 $2.41	Get Quote
Newark	SUM110N10-09-E3	Bulk			1	1 $6.26 10 $4.19 100 $3.02 1000 $2.41 10000 $2.41	Buy Now
TTI	SUM110N10-09-E3	Reel			800	1 - 10 - 100 - 1000 $2.41 10000 $2.41	Buy Now
Quest Components	SUM110N10-09-E3		124			1 $3.41 10 $3.41 100 $2.27 1000 $2.10 10000 $2.10	Buy Now

TME	SUM110N10-09-E3				1	1 $5.38 10 $3.52 100 $2.77 1000 $2.43 10000 $2.43	Get Quote
Chip 1 Exchange ()	SUM110N10-09-E3		1,317			1 - 10 - 100 - 1000 - 10000 -	Get Quote
	SUM110N10-09-E3		1,317			1 - 10 - 100 - 1000 - 10000 -	Get Quote
EBV Elektronik	SUM110N10-09-E3			53 Weeks	800	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Vishay Siliconix SUM110N10-09 110 A, 100 V, 0.0095 OHM, N-CHANNEL, SI, POWER, MOSFET, TO-263AB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	SUM110N10-09		528			1 $4.14 10 $4.14 100 $1.79 1000 $1.66 10000 $1.66	Buy Now
Vishay Huntington SUM110N10-09-E3 Trans MOSFET N-CH 100V 110A 3-Pin(2+Tab) D2PAK / MOSFET N-CH 100V 110A D2PAK
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Win Source Electronics	SUM110N10-09-E3		13,200			1 - 10 - 100 $2.91 1000 $2.80 10000 $2.80	Buy Now

SUM110N10 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
SUM110N10-09 Abstract: sum110n10 Contextual Info: SUM110N10-09 New Product Vishay Siliconix N-Channel 100-V D-S 200_C MOSFET FEATURES D TrenchFETr Power MOSFETS D 200_C Junction Temperature D New Package with Low Thermal Resistance PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 100 0.0095 @ VGS = 10 V	Original	sum110n10-09 o-263 s-04970--rev 29-oct-01 +1sum110n10	PDF
SUM110N10-09 Abstract: SUM110N10-09-E3 Contextual Info: SUM110N10-09 Vishay Siliconix N-Channel 100-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) 100 0.0095 at VGS = 10 V 110a • TrenchFET Power MOSFET • New Package with Low Thermal Resistance • 100 % Rg Tested Available	Original	sum110n10-09 o-263 sum110n10-09-e3 08-apr-05	PDF
SUM110N10-08 Contextual Info: SUM110N10-08 New Product Vishay Siliconix N-Channel 100-V D-S 200_C MOSFET FEATURES D TrenchFETr Power MOSFETS D 200_C Junction Temperature D New Package with Low Thermal Resistance PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 100 0.0085 @ VGS = 10 V	Original	sum110n10-08 o-263 18-jul-08	PDF
SUM110N10-09 Abstract: SUM110N10-09-E3 Contextual Info: SUM110N10-09 Vishay Siliconix N-Channel 100-V D-S 200_C MOSFET FEATURES D D D D PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 100 0.0095 @ VGS = 10 V 110 a TrenchFETr Power MOSFET 200_C Junction Temperature New Package with Low Thermal Resistance 100% Rg Tested	Original	sum110n10-09 o-263 sum110n10-09-e3 125ure +2s-32523--rev 08-dec-03	PDF
SUM110N10-08 Abstract: S-22126-Rev Contextual Info: SUM110N10-08 New Product Vishay Siliconix N-Channel 100-V D-S 200_C MOSFET FEATURES D TrenchFETr Power MOSFETS D 200_C Junction Temperature D New Package with Low Thermal Resistance PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 100 0.0085 @ VGS = 10 V	Original	sum110n10-08 o-263 s-22126--rev 25-nov-02 +1s-22126-rev	PDF
Contextual Info: SUM110N10-09 Vishay Siliconix N-Channel 100 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 100 0.0095 at VGS = 10 V 110a • TrenchFET Power MOSFET • New Package with Low Thermal Resistance • 100 % Rg Tested D TO-263 G G	Original	sum110n10-09 o-263 sum110n10-09-e3 2002/95/ec +32011/65/eu js709a 02-oct-12	PDF
SUM110N10-09 Abstract: sum110n10 Contextual Info: SPICE Device Model SUM110N10-09 Vishay Siliconix N-Channel 100-V D-S 200°C MOSFET CHARACTERISTICS • N- and P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	sum110n10-09 0-to10v 18-apr-01 sum110n10	PDF
Contextual Info: SUM110N10-08 New Product Vishay Siliconix N-Channel 100-V D-S 200_C MOSFET FEATURES D TrenchFETr Power MOSFETS D 200_C Junction Temperature D New Package with Low Thermal Resistance PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 100 0.0085 @ VGS = 10 V	Original	sum110n10-08 o-263 08-apr-05	PDF
Contextual Info: SPICE Device Model SUM110N10-09 www.vishay.com Vishay Siliconix N-Channel 100 V D-S 200 ° MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C	Original	sum110n10-09 2002/95/ec 2011/65/eu js709a +102-oct-12	PDF
A 8014 Abstract: AN609 SUM110N10-09 Contextual Info: SUM110N10-09_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].	Original	sum110n10-09 an609 23-nov-07 a 8014	PDF
Contextual Info: SUM110N10-09 Vishay Siliconix N-Channel 100 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 100 0.0095 at VGS = 10 V 110a • TrenchFET Power MOSFET • New Package with Low Thermal Resistance • 100 % Rg Tested D TO-263 G G	Original	sum110n10-09 o-263 sum110n10-09-e3 2011/65/eu +22002/95/ec 12-mar-12	PDF
AN-826 Contextual Info: SUM110N10-09 Vishay Siliconix N-Channel 100 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 100 0.0095 at VGS = 10 V 110a • TrenchFET Power MOSFET • New Package with Low Thermal Resistance • 100 % Rg Tested D TO-263 G G	Original	sum110n10-09 o-263 sum110n10-09-e3 2011/65/eu +32002/95/ec 12-mar-12 an-826	PDF
Contextual Info: SUM110N10-09 Vishay Siliconix N-Channel 100 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 100 0.0095 at VGS = 10 V 110a • TrenchFET Power MOSFET • New Package with Low Thermal Resistance • 100 % Rg Tested D TO-263 G G	Original	sum110n10-09 o-263 sum110n10-09-e3 11-mar-11	PDF
SUM110N10-09 Abstract: SUM110N10-09-E3 sum110n10 Contextual Info: SUM110N10-09 Vishay Siliconix N-Channel 100 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 100 0.0095 at VGS = 10 V 110a • TrenchFET Power MOSFET • New Package with Low Thermal Resistance • 100 % Rg Tested D TO-263 G G	Original	sum110n10-09 o-263 sum110n10-09-e3 18-jul-08 +1sum110n10	PDF

Contextual Info: SUM110N10-09 Vishay Siliconix New Product N-Channel 40-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) 100 0.0095 at VGS = 10 V 110a • TrenchFET Power MOSFET • New Package with Low Thermal Resistance • 100 % Rg Tested	Original	sum110n10-09 o-263 sum110n10-09-e3 08-apr-05	PDF
SUM110N10-09 Contextual Info: SPICE Device Model SUM110N10-09 Vishay Siliconix N-Channel 100-V D-S 200°C MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	sum110n10-09 s-60674rev 01-may-06	PDF
SUM110N10-09 Abstract: SUM110N10-09-E3 Contextual Info: SUM110N10-09 Vishay Siliconix New Product N-Channel 100-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) 100 0.0095 at VGS = 10 V 110a • TrenchFET Power MOSFET • New Package with Low Thermal Resistance • 100 % Rg Tested	Original	sum110n10-09 o-263 sum110n10-09-e3 08-apr-05	PDF
SUM110N10-09 Abstract: SUM110N10-09-E3 Contextual Info: SUM110N10-09 Vishay Siliconix N-Channel 100-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) 100 0.0095 at VGS = 10 V 110a • TrenchFET Power MOSFET • New Package with Low Thermal Resistance • 100 % Rg Tested Available	Original	sum110n10-09 o-263 sum110n10-09-e3 18-jul-08	PDF
SUM110N10-09 Contextual Info: SPICE Device Model SUM110N10-09 Vishay Siliconix N-Channel 100-V D-S 200°C MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	sum110n10-09 18-jul-08	PDF
Contextual Info: SUM110N10-09 Vishay Siliconix N-Channel 100-V D-S 200_C MOSFET FEATURES D D D D PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 100 0.0095 @ VGS = 10 V 110 a TrenchFETr Power MOSFET 200_C Junction Temperature New Package with Low Thermal Resistance 100% Rg Tested	Original	sum110n10-09 o-263 sum110n10-09-e3 08-apr-05	PDF
REG IC 48V IN 12V 10A OUT ic Abstract: smps Power Supply Schematic Diagram 40A Adjustable Power Supply Schematic Diagram 48V SMPS DRIVERS high-speed power MOSFET smps 10w 12V smps 10w 5V ISL6144 ISL6144IRZA ISL6144IVZA Contextual Info: ISL6144 Data Sheet January 6, 2011 FN9131.6 High Voltage ORing MOSFET Controller Features The ISL6144 ORing MOSFET Controller and a suitably sized N-Channel power MOSFET s increases power distribution efficiency and availability when replacing a power ORing diode	Original	isl6144 fn9131 reg ic 48v in 12v 10a out ic smps power supply schematic diagram +740a adjustable power supply schematic diagram 48v smps drivers high-speed power mosfet smps 10w 12v smps 10w 5v isl6144irza isl6144ivza	PDF
Contextual Info: MIC2587/MIC2587R Single-Channel, Positive High-Voltage Hot Swap Controller Revision 2.0 General Description Features The MIC2587 and MIC2587R are single-channel positive voltage hot swap controllers designed to provide safe insertion and removal of boards for systems that require	Original	mic2587/mic2587r mic2587 mic2587r	PDF
71917 Abstract: level logic mosfet transistor so-8 offline switchmode si9110 siliconix an607 AN607 AN707 SI4406DY PowerPAK SO-8 si2301ds Contextual Info: AN607 Vishay Siliconix DC-to-DC Design Guide Serge Jaunay, Jess Brown INTRODUCTION Manufacturers of electronic systems that require power conversion are faced with the need for higher-density dc-to-dc converters that perform more efficiently, within a smaller	Original	an607 si9137 ssop-28 si9910 +12si9912 si9913 10-oct-02 71917 level logic mosfet transistor so-8 offline switchmode si9110 siliconix an607 an707 si4406dy powerpak so-8 si2301ds	PDF
Contextual Info: ISL6144 Data Sheet October 6, 2011 FN9131.7 High Voltage ORing MOSFET Controller Features The ISL6144 ORing MOSFET Controller and a suitably sized N-Channel power MOSFET s increases power distribution efficiency and availability when replacing a power ORing diode	Original	isl6144 fn9131	PDF

SUM110N10 Search Results

SUM110N10 Datasheets (8)

SUM110N10 Price and Stock

Vishay Intertechnologies SUM110N10-08

Vishay Intertechnologies SUM110N10-09-E3

Vishay Siliconix SUM110N10-09

Vishay Huntington SUM110N10-09-E3

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REG IC 48V IN 12V 10A OUT ic

71917