DS1265Y Search Results

Contextual Info: DS1265Y/AB PRELIMINARY DALLAS DS1265Y/AB 8M Nonvolatile SRAM s e m ic o n d u c to r FEATURES PIN ASSIGNM ENT • 1 0 years minimum data retention in the absence of external power NC É NC • Data is autom atically protected during power loss 1 A18 i • Unlim ited write cycles

Contextual Info: DS1265Y/AB DALLAS DS1265Y/AB 8M Nonvolatile SRAM s e m ic o n d u c to r FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power NC É NC • Data is autom atically protected during power loss 1 A18 i • Unlim ited write cycles

DS1265

Abstract: DS1265AB DS1265AB-100 DS1265AB-70 DS1265Y DS1265Y-100 DS1265Y-70
Contextual Info: DS1265Y/AB 8M Nonvolatile SRAM ww w.dalsem i.com PIN ASSIGNMENT FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Unlimited write cycles Low-power CMOS operation

S1265

Contextual Info: DS1265Y/A8 DALLAS SEMICONDUCTOR DS1265Y/AB 8M Nonvolatile SRAM FEATURES • 10 years minimum data retention in the absence of external power NC I 1 1 • Data is autom atically protected during power loss NC I I A lo 1 • Unlim ited w rite cycles 1 A16 1 1

DS1265

Abstract: DS1265AB DS1265AB-100 DS1265AB-70 DS1265AB-70IND DS1265Y DS1265Y-100 DS1265Y-70
Contextual Info: DS1265Y/AB 8M Nonvolatile SRAM www.maxim-ic.com FEATURES § § § § § § § § § PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Unlimited write cycles Low-power CMOS operation

DS1265

Abstract: DS1265AB DS1265Y
Contextual Info: DS1265Y/AB DS1265Y/AB 8M Nonvolatile SRAM FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power NC 1 36 VCC NC 2 35 A19 A18 3 34 NC A16 4 33 A15 • Low–power CMOS operation A14 5 32 A17 • Read and write access times as fast as 70 ns

Contextual Info: DS1265Y/AB PRELIMINARY DALLAS SEMICONDUCTOR FEATURES DS1265Y/AB 8M Nonvolatile SRAM PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power NC NC • Datais automatically protected during power loss A18 • Unlimited write cycles

Contextual Info: 19-5616; Rev 11/10 DS1265Y/AB 8M Nonvolatile SRAM www.maxim-ic.com FEATURES • •        PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Unlimited write cycles

DS1265

Abstract: DS1265AB DS1265Y
Contextual Info: DS1265Y/AB PRELIMINARY DS1265Y/AB 8M Nonvolatile SRAM FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power NC 1 36 VCC NC 2 35 A19 A18 3 34 NC A16 4 33 A15 • Low–power CMOS operation A14 5 32 A17 • Read and write access times as fast as 70 ns

DS1265

Abstract: DS1265AB DS1265AB-100 DS1265AB-70 DS1265Y DS1265Y-100 DS1265Y-70
Contextual Info: DS1265Y/AB 8M Nonvolatile SRAM www.maxim-ic.com FEATURES § § § § § § § § § PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Unlimited write cycles Low-power CMOS operation

DS1265

Abstract: DS1265AB DS1265AB-100 DS1265AB-70 DS1265Y DS1265Y-100 DS1265Y-70
Contextual Info: DS1265Y/AB 8M Nonvolatile SRAM www.dalsemi.com FEATURES PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Unlimited write cycles Low-power CMOS operation Read and write access times as fast as 70 ns

Contextual Info: DS1265Y/AB P R E L IM IN A R Y DALLAS SEMICONDUCTOR DS1265Y/AB 8M Nonvolatile SRAM FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power Vcc A19 • Data is automatically protected during power loss NC • Unlimited write cycles

DS1265AB-70IND

Abstract: DS1265 DS1265AB DS1265AB-70 DS1265Y DS1265Y-70 DS1265Y-70IND DS12
Contextual Info: 19-5616; Rev 11/10 DS1265Y/AB 8M Nonvolatile SRAM www.maxim-ic.com FEATURES • •        PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Unlimited write cycles

F5 sot223

Abstract: DS18S20Z DS1270Y-70IND TSOC 6 socket ds1480 DS1321 DS1667S-010 DS2404S-001 DS2404S001 dallas ds1213c
Contextual Info: DS1233A 3.3V EconoReset www.maxim-ic.com FEATURES § § § § § § § § § § PIN ASSIGNMENT Automatically restarts microprocessor after power failure Monitors pushbutton for external override Internal circuitry debounces pushbutton switch Maintains reset for 350ms after VCC returns to

ELAP CM 72

Abstract: ELAP cm 76 fm transmitter 2KM documentation DDU-66F-XXX ELAP CM 140 hp laptop battery pack pinout semi catalog EB 203 D maxim evaluation kit touch dimmer TC 306 S
Contextual Info: Data B ook C o n t e n t s •S h o r t • F irst • S a l e s -Fo -Pa O rm g e C atalog Data S h e e t s ffic es CD •C ROM C o n ten ts: o m p l e t e Data S an d A pplication fo r A l l • U s e r 's G P h e e t s n o t e s r o d u c ts uides p. -••x;. < ~x3xxr r -> ~' ' fP 5 > g? 3

M48128Y

Abstract: ds1245y DS1225Y
Contextual Info: De usili • - S i1 ! i : i ; : í ; í ! u c í í : n 31 fVlb ro e :e o h i ■¡î i c ■. ;î.f i .1 o - DS1225AB M48Z08 DS1225AD M48Z18 bq4010Y M48Z58 bq4010/4823Y M48Z58Y bq4010Y bq4010

DS1501

Abstract: DS-1100 DS1425L-F5 ds1307 pic DS1220Y-200IND 256K x 8 SRAM dip ds1480 SOT23-5 VTP DS80C320 PIC ds1236s-5
Contextual Info: DS1836/A/B/C/D 3.3V/5V MicroManager www.maxim-ic.com FEATURES § § § § § § § § § § § § 5V or 3.3V power-on reset True 3V operation power switch Switches to battery at 3.8V 2.6V for 3.3V versions Excellent for systems designed to operate with dual power supplies

dallas ds80c320 high speed micro guide

Abstract: transistor bf 175 DS1640
Contextual Info: TABLE OF CONTENTS Short-Form Catalog T im e kee pin g . 1 M emory P ro d u

panasonic msds

Abstract: BR1225 msds battery BR1632 safety BR1632 panasonic BR1632 BATTERY MSDS rechargeable coin battery safety ds12887 Panasonic SRAM ds12887 application note
Contextual Info: Maxim > Design Support > App Notes > Memory > APP 5013 Maxim > Design Support > App Notes > Real-Time Clocks > APP 5013 Keywords: lithium, battery, MSDS Mar 14, 2011 APPLICATION NOTE 5013 Lithium Battery Content in Maxim Products Abstract: Maxim produces a variety of products that contain embedded lithium coin-cell batteries. This article addresses questions

dallas ds80c320 high speed micro guide

Abstract: DS1640
Contextual Info: 'w - l J J t f °0 _72 , TABLE OF CONTENTS Short-Form Catalog T im e k e e p in g .1 M em ory P rodu cts .

F5 sot223

Abstract: DS1225AB-85 DS1425L-F5 DS1307Z T DALLAS DS80C320 DS1236-5 ds1233z DS1267N DS1267SN-100 DS1270W
Contextual Info: DS1233 5V EconoReset www.maxim-ic.com FEATURES § § § § § § § § § § PIN ASSIGNMENT Automatically restarts microprocessor after power failure Monitors pushbutton for external override Internal circuitry debounces pushbutton switch Maintains reset for 350ms after VCC returns to

DS1425L-F5

Abstract: ds1480s F5 sot223 DS1868 DS75U ds1642-150 DS1669SN-10 DS1220Y-200IND ds1386-8-150 DS1251W-120
Contextual Info: DEVICE DS0621 DS1000 DS1000-IND DS1004 DS1005 DS1007 DS1010 DS1013 DS1020 PACKAGE TYPE OPERATING TEMPERATURORDERING RANGE CELSIUS NUMBER Software 8-Pin DIP 8-Pin SOIC 8-Pin SOIC T&R 8-Pin DIP 8-Pin SOIC 8-Pin SOIC T&R 8-Pin DIP 8-Pin DIP 8-Pin DIP 8-Pin DIP

ds1255

Abstract: DS1255Y
Contextual Info: DS1265 Y/AB PRELIMINARY DALLAS SEMICONDUCTOR FEATURES DS1 265Y/ AB 8M Nonvolatile SRAM PIN A S S I G N M E N T • 10 years m inimum data retention in the absence of external power NC I 1 1 • Data is autom atically protected during power loss NC 11 A18 I 1

DS-1100

Abstract: ds1386-32-120 ds1225y ds1480 DS1667S-010 ds1775r1 u DS1251W-120 DS1270Y-70IND DS1307Z DS1669 replacement
Contextual Info: DS1135 3-in-1 High-Speed Silicon Delay Line www.maxim-ic.com FEATURES § § § § § § § § § § PIN ASSIGNMENT All-silicon timing circuit Three independent buffered delays Stable and precise over temperature and voltage Leading and trailing edge precision preserves