DS100309 Search Results
DS100309 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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IXFB100N50Contextual Info: Advance Technical Information IXFB100N50Q3 HiperFETTM Power MOSFET Q3-Class VDSS ID25 RDS on trr = = ≤ ≤ 500V 100A Ω 49mΩ 250ns N-Channel Enhancement Mode Fast Intrinsic Rectifier PLUS264TM Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C |
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ixfb100n50q3250nsplus264tm100n50q3+1 | |
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Contextual Info: Semiconductor 100321 Low Power 9-Bit Inverter General Description 2000V ESD protection The 100321 is a m onolithic 9-bit inverter. The device con tains nine inverting buffer gates w ith single input and output. All inputs have 50 kQ pull-dow n resistors. |
OCR Scan |
24-pin | |
EGSM900
Abstract: GSM900 RF3140 RF3140PCBA-41X
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rf3140rf3140quadbandgsm850/gsm900/dcs/pcs+8 | |
PLL-02
Abstract: 26MHZ NDK toyocom Tcxo 26MHZ modulator 26MHz DCS1800 EGSM900 GP01 GP02 PCS1900 RF2716
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rf600148-pinds100309pll-02+9 | |
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Contextual Info: RF6001 FRACTIONAL-N RF SYNTHESIZER WITH MODULATOR AND DIGITAL IF FILTER NOT FOR NEW DESIGNS MS/ TXIB MDI/ TXQ MCK/ TXQB SSB SDI SCLK LDTO RXEN 47 TXI VDD 48 DCD OSCO Part of the POLARIS TOTAL RADIO™ Solution RoHS Compliant & Pb-Free Product Package Style: QFN, 48-Pin, 7 x 7 |
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rf600148-pinds100309 | |
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Contextual Info: Advance Technical Information HiperFETTM Power MOSFET Q3-Class VDSS ID25 IXFB100N50Q3 RDS on trr = = ≤ ≤ 500V 100A Ω 49mΩ 250ns N-Channel Enhancement Mode Fast Intrinsic Rectifier PLUS264TM Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C |
Original |
ixfb100n50q3250nsplus264tm100n50q3 | |
F100K
Abstract: J24E W24B DS100309
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Original |
mil-std-883ds100309-124-pinds100309-3+6 |