DS10020 Search Results

IXTQ69N30PM

Abstract: IXTQ69N30 ixtq69n30p
Contextual Info: Advance Technical Information IXTQ69N30PM PolarTM Power MOSFET VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = 300V = 25A Ω ≤ 49mΩ OVERMOLDED (IXTQ.M) OUTLINE Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1 MΩ

PVX006

Abstract: PVX006A0X3-SRZ PVX006A0X PDT006
Contextual Info: Preliminary Data Sheet January 19, 2012 6A Analog Pico DLynxTM: Non-Isolated DC-DC Power Modules 3Vdc –14.4Vdc input; 0.6Vdc to 5.5Vdc output; 6A Output Current Features RoHS Compliant Applications • Distributed power architectures • Intermediate bus voltage applications

PVX006A0X

Contextual Info: Preliminary Data Sheet October 17, 2011 6A Analog Pico DLynxTM: Non-Isolated DC-DC Power Modules 3Vdc ––14.4Vdc input; 0.6Vdc to 5.5Vdc output; 6A Output Current Features RoHS Compliant Applications ƒ Compliant to RoHS EU Directive 2002/95/EC Z versions

embedded dram timing

Contextual Info: ASIC DATA BOOK TC300 Series Embedded DRAM 2003 TC300 Series Embedded DRAM Published in December, 2003 Document ID: BDE0067A C Copyright 2003 TOSHIBA Corporation All Rights Reserved The information contained herein is subject to change without notice. The information contained herein is presented only as a guide for the applications of our products.

MIL-STD-833B

Abstract: 54ABT273 54ABT273E-QML 54ABT273J-QML 54ABT273W-QML ABT273 ABT373 J20A W20A
Contextual Info: 54ABT273 Octal D-Type Flip-Flop General Description The ’ABT273 has eight edge-triggered D-type flip-flops with individual D inputs and Q outputs. The common buffered Clock CP and Master Reset (MR) inputs load and reset (clear) all flip-flops simultaneously.

abt245

Abstract: 54ABT245 54ABT245E-QML 54ABT245J-QML 54ABT245W-QML E20A J20A W20A
Contextual Info: 54ABT245 Octal Bidirectional Transceiver with TRI-STATE Outputs General Description The ’ABT245 contains eight non-inverting bidirectional buffers with TRI-STATE outputs and is intended for bus-oriented applications. Current sinking capability is 48 mA on both the

02N120

Abstract: IXTY02N120P 02N120P IXTP02N120P power mosfet 600v
Contextual Info: Advance Technical Information IXTP02N120P IXTY02N120P PolarTM Power MOSFET VDSS ID25 RDS on = 1200V = 0.2A ≤ 75Ω Ω N-Channel Enhancement Mode Avalanche Rated TO-220 (IXTP) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1200 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ

IXTH75N10L2

Abstract: IXTT75N10L2 IXTH75N10L
Contextual Info: Advance Technical Information IXTH75N10L2 IXTT75N10L2 LinearL2TM Power MOSFET w/extended FBSOA VDSS ID25 = 100V = 75A ≤ 21mΩ Ω RDS on D O D N-Channel Enhancement Mode Guaranteed FBSOA Avalanche Rated RGi G O ww TO-247 (IXTH) O S Symbol Test Conditions

Contextual Info: 54ABT273 54ABT273 Octal D-Type Flip-Flop Literature Number: SNOS043 54ABT273 Octal D-Type Flip-Flop General Description The ’ABT273 has eight edge-triggered D-type flip-flops with individual D inputs and Q outputs. The common buffered Clock CP and Master Reset (MR) inputs load and reset

Contextual Info: Advance Technical Information IXFA6N120P IXFP6N120P IXFH6N120P PolarTM HiPerFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode VDSS ID25 = 1200V = 6A ≤ 2.4Ω Ω RDS on TO-263 AA (IXFA) G S D (Tab) Symbol Test Conditions VDSS

Contextual Info: Advance Technical Information TrenchT2TM GigaMOSTM Power MOSFET VDSS ID25 IXTK600N04T2 IXTX600N04T2 = = 40V 600A Ω 1.5mΩ RDS on ≤ N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 (IXTK) Symbol Test Conditions Maximum Ratings VDSS

IXTK600N04T2

Abstract: IXTX600N04T2 PLUS247
Contextual Info: Advance Technical Information TrenchT2TM GigaMOSTM Power MOSFET IXTK600N04T2 IXTX600N04T2 VDSS ID25 = = 40V 600A Ω 1.5mΩ RDS on ≤ N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 (IXTK) Symbol Test Conditions Maximum Ratings VDSS

54ABT646

Abstract: 54ABT646E-QML 54ABT646J-QML 54ABT646W-QML E28A J24A W24C
Contextual Info: 54ABT646 Octal Transceivers and Registers with TRI-STATE Outputs General Description Features The ’ABT646 consists of bus transceiver circuits with TRI-STATE, D-type flip-flops, and control circuitry arranged for multiplexed transmission of data directly from the input

54ABT374

Abstract: E20A J20A W20A DS100207-1 ABT374
Contextual Info: 54ABT374 Octal D-Type Flip-Flop with TRI-STATE Outputs General Description The ’ABT374 is an octal D-type flip-flop featuring separate D-type inputs for each flip-flop and TRI-STATE outputs for bus-oriented applications. A buffered Clock CP and Output

Contextual Info: Semiconductor 54ABT373 Octal Transparent Latch with TRI-STATE Outputs G uaranteed m ultiple output sw itching specifications General Description The ’ABT373 consists o f eight latches with TR I-STATE o ut­ puts fo r bus organized system applications. The flip-flops a p ­

Contextual Info: Advance Technical Information LinearL2TM Power MOSFET w/extended FBSOA VDSS ID25 IXTH75N10L2 IXTT75N10L2 = 100V = 75A ≤ 21mΩ Ω RDS on D O D N-Channel Enhancement Mode Guaranteed FBSOA Avalanche Rated RGi G O ww TO-247 (IXTH) O S Symbol Test Conditions

IXTH60N20L2 Linear Power MOSFET

Abstract: ixth60n20 60n20 IXTT60N20L2 IXTH60N20L2
Contextual Info: Advance Technical Information IXTT60N20L2 IXTQ60N20L2 IXTH60N20L2 Linear L2TM Power MOSFET w/ Extended FBSOA VDSS ID25 = 200V = 60A ≤ 45mΩ Ω RDS on N-Channel Enhancement Mode Avalanche Rated TO-268 (IXTT) G S Tab Symbol Test Conditions Maximum Ratings

54ABT245

Abstract: 54ABT245E-QML 54ABT245J-QML 54ABT245W-QML ABT245 E20A J20A W20A
Contextual Info: Ju ly 1998 54ABT245 Octal Bidirectional Transceiver with TRI-STATE Outputs General Description The ’ABT245 contains eight non-inverting bidirectional buff­ ers with TRI-STATE outputs and is intended fo r bus-oriented applications. Current sinking capability is_48 m A on both the

Contextual Info: Preliminary Data Sheet August 31, 2011 6A Analog Pico DLynxTM: Non-Isolated DC-DC Power Modules 3Vdc –14.4Vdc input; 0.6Vdc to 5.5Vdc output; 6A Output Current Features RoHS Compliant Applications • Distributed power architectures • Intermediate bus voltage applications

IXFH86N30T

Contextual Info: IXFH86N30T IXFT86N30T TrenchTM HiperFETTM Power MOSFET VDSS ID25 = 300V = 86A  46m  RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier TO-247 (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 300 V

FPD3000SOT89

Contextual Info: FPD3000SOT89CE FPD3000SOT8 9CELow-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package: SOT89 Product Description Features The FPD3000SOT89CE is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25 mx1500μm

Contextual Info: ß Semiconductor 54ABT374 Octal D-Type Flip-Flop with TRI-STATE Outputs General Description • G u a ra n te e d m u ltip le o u tp u t s w itc h in g s p e c ific a tio n s T h e ’A B T 3 7 4 is a n o c ta l D -ty p e flip -flo p fe a tu rin g s e p a ra te

Contextual Info: & Semiconductor 54ABT245 July 1998 National 54ABT245 G uaranteed output skew General Description The ’ABT245 contains eight non-inverting bidirectional butt­ ers with TRI-STATE outputs and is intended to r bus-oriented applications. Current sinking capability is 48 m A on both the

Contextual Info: J u ly 1 9 9 8 Semiconductor 54ABT16373 16-Bit Transparent Latch with TRI-STATE Outputs General Description Features T h e A B T 1 6 3 7 3 c o n ta in s s ix te e n n o n -in v e rtin g la tc h e s w ith • S e p a ra te c o n tro l lo g ic fo r e a c h byte