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    IXTY02N120P Search Results

    IXTY02N120P Datasheets (1)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    IXTY02N120P
    		IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1200V 200MA DPAK Original PDF 4
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    IXTY02N120P Price and Stock

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    IXYS Corporation IXTY02N120P

    MOSFET N-CH 1200V 200MA TO252
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    DigiKey IXTY02N120P Tube 14,880 1
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    Mouser Electronics IXTY02N120P 991
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    Future Electronics IXTY02N120P Tube 350
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    TTI IXTY02N120P Tube 350
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    TME IXTY02N120P 1
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    Chip Stock IXTY02N120P 23,500
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    IXYS Corporation IXTY02N120P-TRL

    MOSFET N-CH 1200V 200MA TO252
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    DigiKey IXTY02N120P-TRL Reel 2,500
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    Littelfuse Inc IXTY02N120P-TRL

    Trans MOSFET N-CH 1.2KV 0.2A 3-Pin(2+Tab) DPAK T/R
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    Verical IXTY02N120P-TRL 17,500 2,500
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    Newark IXTY02N120P-TRL Reel 2,500
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    Littelfuse Inc IXTY02N120P

    Trans MOSFET N-CH 1.2KV 0.2A 3-Pin(2+Tab) DPAK
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    Verical IXTY02N120P 700 6
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    Littelfuse Inc IXTY02N120P (POLAR SERIES)

    Mosfet, N-Ch, 1.2Kv, 0.2A, To-252; Channel Type:N Channel; Drain Source Voltage Vds:1.2Kv; Continuous Drain Current Id:200Ma; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V Rohs Compliant: Yes |Littelfuse IXTY02N120P
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    Newark IXTY02N120P (POLAR SERIES) Bulk 195 1
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    IXTY02N120P Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    02N120

    Abstract: IXTY02N120P 02N120P IXTP02N120P power mosfet 600v
    Contextual Info: Advance Technical Information IXTP02N120P IXTY02N120P PolarTM Power MOSFET VDSS ID25 RDS on = 1200V = 0.2A ≤ 75Ω Ω N-Channel Enhancement Mode Avalanche Rated TO-220 (IXTP) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1200 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		IXTP02N120P IXTY02N120P O-220 02N120P 02N120 IXTY02N120P IXTP02N120P power mosfet 600v PDF

    Contextual Info: Advance Technical Information PolarTM Power MOSFET VDSS ID25 IXTP02N120P IXTY02N120P RDS on = 1200V = 0.2A Ω ≤ 75Ω N-Channel Enhancement Mode Avalanche Rated TO-220 (IXTP) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1200 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		IXTP02N120P IXTY02N120P O-220 02N120P PDF

    IXTP02N120P

    Abstract: 02N12 ixty02n120p
    Contextual Info: PolarTM Power MOSFETs VDSS ID25 IXTP02N120P IXTY02N120P RDS on = 1200V = 0.2A ≤ 75Ω Ω N-Channel Enhancement Mode Avalanche Rated TO-220 (IXTP) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1200 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		IXTP02N120P IXTY02N120P O-220 02N120P IXTP02N120P 02N12 ixty02n120p PDF