DS0420 Search Results

433.92 mhz

Contextual Info: Flexibility & Innovation …. DS0420V. 01 25/09/02 DATA SHEET TSF0433-07 433.92 MHZ SAW FILTER PRELIMINARY SPECIFICATION PACKAGE SMD5 PRODUCT FEATURES : 1.5±0.12 Ø LOW LOSS Ø SMALL SMD PACKAGE Ø NARROW BAND 1.27 TYP. 2.54 TYP. 5.00±0.20 4 CONTACT : 3

Contextual Info: Flexibility & Innovation …. DS0420 V. 01 25/09/02 DATA SHEET 5 TSF0433-07 433.92 MHZ SAW FILTER PRELIMINARY SPECIFICATION PACKAGE SMD5 PRODUCT FEATURES : 1.5±0.12 Ø LOW LOSS Ø SMALL SMD PACKAGE Ø NARROW BAND 1.27 TYP. CONTACT : 2.54 TYP. 5.00±0.20 4

sg 421

Abstract: mikroelektronik ic data Electromechanical Filter 10.7 ku 201 Piezoelectric 10Mhz FAR-F4DA-155M52-G201 FAR-F4DA-51M840-G201 FAR-F4DA-97M728-G201 far-f4 Fujitsu SAW
Contextual Info: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS04-20101-1E ASSP TIMING EXTRACTION FILTER 50 to 300MHz F4 SERIES • DESCRIPTION The F4 series are timing extraction filter used in the high-grade digital transmission equipment like wide-band ISDN. The F4 series uses a single lithium tantalate piezoelectric crystal (L iTaO3) that has large electromechanical

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS04-20101-1E ASSP TIMING EXTRACTION FILTER 50 to 300MHz F4 SERIES • DESCRIPTION The F4 series are timing extraction filter used in the high-grade digital transmission equipment like wide-band ISDN. The F4 series uses a single lithium tantalate piezoelectric crystal (L iTaO3) that has large electromechanical

2M04

Abstract: 16.384Mhz OSC 2.048MHz 34.368MHz data sheet IC LM 335 ic 544 FAR-F1DA-1M5440-G201 FAR-F1DA-1M5440-G202 FAR-F1DA-1M5440-G203 FAR-F1DA-1M5440-G205
Contextual Info: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS04-20100-3E ASSP TIMING EXTRACTION BANDPASS FILTER 1.5 to 100MHz F1/F2/F3 SERIES • DESCRIPTION The F1, F2 and F3 Series were developed as timing extraction filters for primary, secondary, and tertiary digital

Contextual Info: Integrated Device Technology, Inc. IDT54/74FCT245/A/C IDT54/74FCT640/A/C IDT54/74FCT645/A/C FAST CMOS OCTAL BIDIRECTIONAL TRANSCEIVERS FEATURES: DESCRIPTION: • IDT54/74FCT245/640/645 equivalent to FAST speed and drive The IDT octal bidirectional transceivers are built using

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS04-20101-1E ASSP TIMING EXTRACTION FILTER 50 to 300MHz F4 SERIES • DESCRIPTION The F4 series are timing extraction filter used in the high-grade digital transmission equipment like wide-band ISDN. The F4 series uses a single lithium tantalate piezoelectric crystal (LiTaO3) that has large electromechanical

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS04-20100-3E ASSP TIMING EXTRACTION BANDPASS FILTER 1.5 to 100MHz F1/F2/F3 SERIES • DESCRIPTION The F1, F2 and F3 Series were developed as timing extraction filters for primary, secondary, and tertiary digital communication devices.

2M04

Abstract: 16-M3 F3 Series
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS04-20100-3E ASSP TIMING EXTRACTION BANDPASS FILTER 1.5 to 100MHz F1/F2/F3 SERIES • DESCRIPTION The F1, F2 and F3 Series were developed as timing extraction filters for primary, secondary, and tertiary digital communication devices.

Contextual Info: Preliminary Data Sheet July 2004 AGRB10XM 10 W, 1.0 GHz to 2.7 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Performance Features The AGRB10 is a broadband, general-purpose, highvoltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for 1.0 GHz to 2.7 GHz operation.

6m312

Abstract: 3m152 2M04 1330DE
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS04-20100-3E ASSP TIMING EXTRACTION BANDPASS FILTER 1.5 to 100MHz F1/F2/F3 SERIES • DESCRIPTION The F1, F2 and F3 Series were developed as timing extraction filters for primary, secondary, and tertiary digital communication devices.

transistor equivalent table 557

Abstract: 21045F
Contextual Info: AGR18030EF 30 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction The AGR18030EF is a high-voltage, gold-metallized, laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for global system for mobile communication

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS04-20101-1E ASSP TIMING EXTRACTION FILTER 50 to 300MHz F4 SERIES • DESCRIPTION The F4 series are timing extraction filter used in the high-grade digital transmission equipment like wide-band ISDN. The F4 series uses a single lithium tantalate piezoelectric crystal (LiTaO3) that has large electromechanical

AGR21030EF

Abstract: AGR21030XF JESD22-C101A J622
Contextual Info: Preliminary Data Sheet June 2004 AGR21030EF 30 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR21030EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband

Contextual Info: n FUJITSU SEMICONDUCTOR DATA SHEET DS04-20100-3E ASSP TIMING EXTRACTION • DESCRIPTION The F1, F2 and F3 Series were developed as timing extraction filters for primary, secondary and tertiary digital communication devices. This new all-solid-state bandpass filter BPF uses a piezoelectric with a large electromechanical coefficient

MOSFET J162

Abstract: j162 MOSFET J147
Contextual Info: Preliminary Data Sheet August 2004 AGRA10XM 10 W, 100 MHz—1.0 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Performance Features The AGRA10 is a broadband general-purpose, highvoltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for Nordic Mobile Telephone (NMT) 460 MHz

AGR21030E

Abstract: AGR21030EF AGR21030EU JESD22-C101A
Contextual Info: Preliminary Data Sheet May 2004 AGR21030E 30 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21030E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband

ATC100B101JW500X

Abstract: 08055C103KATMA AGRA10XM cdm 316 JESD22-C101A ATC100B1R0BW500
Contextual Info: Preliminary Data Sheet August 2004 AGRA10XM 10 W, 100 MHz—1.0 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Device Features The AGRA10 is a broadband general-purpose, highvoltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for personal cellular band IS-95 865 MHz to