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AGRB10 Datasheets (3)

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Agere Systems

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
AGRB10E		Agere Systems	10 W, 1.0 GHz - 2.7 GHz, N-Channel E-Mode, Lateral MOSFET	Original	PDF	52.75KB	7
AGRB10E		Agere Systems	FET Transistor, 10W, 1GHz to 2.7GHz, N-Channel E-Mode	Original	PDF	52.92KB	7
AGRB10XM		Agere Systems	10 W, 1.0GHz TO 2.7 GHz N-Channel E-Mode, Lateral MOSFET	Original	PDF	71.52KB	5

AGRB10 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
AGRB10XM Abstract: JESD22-C101A DSA00206784.txt Contextual Info: Data Sheet April 2004 AGRB10XM 10 W, 1.0 GHz to 2.7 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Performance Features The AGRB10 is a broadband, general-purpose, highvoltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for 1.0 GHz to 2.7 GHz operation.	Original	agrb10xm agrb10 ds04-140rfpp pb04-052rfpp +2jesd22-c101a dsa00206784.txt	PDF
Contextual Info: Product Brief February 2004 AGRB10XM 10 W, 1.0 GHz to 2.7 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGRB10XM is a broadband, general-purpose, high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor	Original	agrb10xm pb04-052rfpp pb04-009rfpp	PDF
Contextual Info: Preliminary Data Sheet July 2004 AGRB10XM 10 W, 1.0 GHz to 2.7 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Performance Features The AGRB10 is a broadband, general-purpose, highvoltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for 1.0 GHz to 2.7 GHz operation.	Original	agrb10xm agrb10 ds04-203rfpp ds04-140rfpp	PDF
Contextual Info: Product Brief January 2004 AGRB10XM 10 W, 1.0 GHz to 2.7 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGRB10XM is a broadband, general-purpose, high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor	Original	agrb10xm pb04-009rfpp	PDF
AGRB10E Abstract: AGRB10E equivalent JESD22-C101A 1661 mhz Contextual Info: Preliminary Data Sheet February 2004 AGRB10E 10 W, 1.0 GHz—2.7 GHz, N-Channel E-Mode, Lateral MOSFET Introduction 1930 MHz to 1990 MHz PCS The AGRB10E (1.0 GHz to 2.7 GHz) is a broadband general-purpose, high-voltage, gold-metalized, laterally diffused metal oxide semiconductor (LDMOS)	Original	agrb10e ds04-097rfpp ds03-164rfpp agrb10e equivalent +2jesd22-c101a 1661 mhz	PDF
AGRB10E Abstract: JESD22-C101A Inmarsat Contextual Info: Preliminary Data Sheet January 2004 AGRB10E 10 W, 1.0 GHz—2.7 GHz, N-Channel E-Mode, Lateral MOSFET Introduction 1930 MHz to 1990 MHz PCS The AGRB10E (1.0 GHz to 2.7 GHz) is a broadband general-purpose, high-voltage, gold-metalized, laterally diffused metal oxide semiconductor (LDMOS)	Original	agrb10e envir32/f ds03-164rfpp ds03-038rfpp +2jesd22-c101a inmarsat	PDF
AGRA10EM Abstract: APP550 APP550TM AGR09085EF APP550TM and APP530TM 400-kHz agra 30 TAAD08JU2 AGR09030EF AGR09030GUM Contextual Info: RF Power Transistor Line RF Power Environment Agere’s RF LDMOS transistors are used in wireless base stations to boost voice, data, and video signals in various frequency ranges. They are targeted for second-generation 2G , 2.5-generation (2.5G), and thirdgeneration (3G) base station	Original	ca03-005rfpp-7 ca03-005rfpp-6 agra10em app550 +8app550tm agr09085ef app550tm and app530tm 400-khz agra 30 taad08ju2 agr09030ef agr09030gum	PDF