AGRB10XM Search Results
AGRB10XM Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| AGRB10XM | Agere Systems | 10 W, 1.0GHz TO 2.7 GHz N-Channel E-Mode, Lateral MOSFET | Original | 71.52KB | 5 |
AGRB10XM Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
AGRB10XM
Abstract: JESD22-C101A DSA00206784.txt
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Original |
agrb10xmagrb10ds04-140rfpppb04-052rfpp+2 | |
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Contextual Info: Product Brief February 2004 AGRB10XM 10 W, 1.0 GHz to 2.7 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGRB10XM is a broadband, general-purpose, high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor |
Original |
agrb10xmpb04-052rfpppb04-009rfpp | |
|
Contextual Info: Preliminary Data Sheet July 2004 AGRB10XM 10 W, 1.0 GHz to 2.7 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Performance Features The AGRB10 is a broadband, general-purpose, highvoltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for 1.0 GHz to 2.7 GHz operation. |
Original |
agrb10xmagrb10ds04-203rfppds04-140rfpp | |
|
Contextual Info: Product Brief January 2004 AGRB10XM 10 W, 1.0 GHz to 2.7 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGRB10XM is a broadband, general-purpose, high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor |
Original |
agrb10xmpb04-009rfpp |