DS-17 SANYO Search Results

2SK933

Abstract: gat6 2sk 1045 y DS-17 SANYO
Contextual Info: SANYO SEMICONDUCTOR CORP S32SK 923 - 1 E E D | SS2SK932 7 En 7 D 7 b DOOS S Oe T-ll-Ol Silicon N-Channel MOS F E T Silicon N-Channel F E T High Speed Switching Applications High Frequency, Low Noise Amp Applications J E D E C : T 0 2 2 0 package

J289

Abstract: 3SK266 2SK1728 3sk251 DS-17 SANYO
Contextual Info: SAftYO Small-signal MOSFETs Feat, u r e s ♦ Very low noise figure * Large IYf s I * Low gate leak current Sma11-sized package permitting FET-used sets to be made smaller Case Out 1inesiunit:mm SANYO:CP4 x Lr Amp, Low Noise, Analog Switch Impedance Conversion Applications

Contextual Info: SA0YO M CP Mini C h i p Pack Transistors The package of Sanyo MCP (Mini Chip Pack) transistors is made so small-sized as approximately 2/3 of the CP package heretofore in use, permitting MCP transistor-applied sets to be made smaller, ole V e i - y h i g h

a1764

Abstract: 2SA1815 J2SK242 A1607 DS-17 SANYO
Contextual Info: SANYO MCP Mini C h i p Pack Transistors The package of Sanyo MCP (Mini Chip Pack) transistors is made so small-sized as approximately 2/3 of the CP package heretofore in use, permitting MCP transistor-applied sets to be made smaller, ate V t a t - y h i g h

2SK922

Abstract: mos fet 120v 10A 2SC4293 2SC4294 fet Marking M3
Contextual Info: SANYO SEMICONDUCTOR 12E CORP D | 7^7U7h □□□S5D1 oi SS2SC4293 5 S2 SK 917 Silicon Transistor Silicon N-Channel MOS F E T V ary High-Definition Color Display Horizontal High Speed Switching Applications Deflection Output Applications • J E D EC : T 0 2 2 0 package

J289

Abstract: K2171 2sj281 2SK1847 2SK1470 KD K1470 2sk669 K1311
Contextual Info: Small-signal Features MOS FETs ♦ Very low noise_ figure * Large _ |Yfs| # Low gate leak current * Small-sized packageipermitting — ' i ♦ FET-used sets to be made, smaller Case Oct 1in.es /uni I.:a SANYO :C:'4 sjc LF Amp, Low Noise, Analog Switch Impedance Conversion Applications

2SK686

Abstract: ODDS445 t37h
Contextual Info: SANYO SEMICONDUCTOR 15E D I CORP T-3^-|/ 2SK686 N-Channel M O S Silicon Field-Effect Transistor 2052A <£&m 7 cH7G7ti~ DODS441 High Speed Power Switching Applications Features Low-on resistance, very high-speed switching, converters Absolute H a x l M Ratings at Ta=25°C

LC7257

Abstract: SL251 sl1514 SL254 SL-2552 SL275 SL-1514 SL-2512 SANYO
Contextual Info: SANYO SEMICONDUCTOR CORP 7b m T I tTì TD? ! , DOOESMö S |" *- SANYO 76C “7 9 9 7 0 7 6 SANYO SEMICONDUCTOR CORP ^ 0 2 2 4 e f, ' T ~ i4 h â S 4 ~ 5 JfíLED Ífc^ ^ 7 jvi^ - 6mmH 4~5Digits L E D Numeric Displays A bsolute n it- « fêlÜË] Color IF/seg IFP/seg VR/seg

2052A

Abstract: SILICON TRANSISTOR FS 2025
Contextual Info: SANYO SEM ICONDUCTO R IS E CORP D 2SK778 N -Channel M O S Silicon Field-Effect Transistor 2052A 2562 7 T i 7 G 7 t. □DGSMbS 1 T-Sl-oV Very High Speed Switching Applications Features . Low ON resistance, very high-speed switching Absolute Haxlaua Ratings at Ta=25°C

3SK168

Contextual Info: SANYO SEMICONDUCTOR CÖRP 12E D | OGDS4 7 S =1 T 'il'Z s r 3SK168 GaAs Dual Gate M ES Silicon Field-Effect Transistor 2053 -' TTITD Tb 'S- • U H F Amp, Mixer Applications 2252 Absolute H a z l a n Batlags at Ta=25°C Drain to Source Voltage 'DS Gatel to Source Voltage

K 2056 transistor

Abstract: 2SK777
Contextual Info: SANYO SEMICONDUCTOR Ï I Ë T 1 CORP 711707t 3 ? - 12. r - 2SK777 G0QSMb3 N-Channel M OS Silicon Fieid-Effect Transistor 2056 Very High Speed Switching Applications 2661 Features . Low ON résistance, very high-speed switching Absolute H a i l n Ratings at Ta=25°C

2sk77

Abstract: 2SK772 2SK444 2sk20 2SK1332 2SK968 2sk332 2sk427 2SK36 2sk377 j
Contextual Info: SAftYO Smal 1-signal u r e s F e a FETs Case Outlines unit:mm SANYO:SMCP 1. Gate, 2. Source, 3. Drain. ♦ Very low noise figure »Large lYfsl * Low gate leak current ♦ Small-sized package permitting FET-used sets to be made smaller alt LF Amp.Low Noise,Analog Switch,Impedance Conversion Applications

2SK68

Abstract: 2SK688 transistor 2SK688 DDD3710 A1788 TD-220AB transistor BUV 92
Contextual Info: SANYO SEMICONDUCTOR CORP IS E 2052A . It . : ?ìT?G 7t, T - 3 7 - 2SK688 2465A D I il N -C h a n rie l M O S S ilic o n F ie ld -E ffe c t T ra n sisto r High Speed Power Switching Applications Features Low-on resistance, very high-speed switching, converters

2SD1400

Abstract: cp 06a
Contextual Info: SANYO SEMICONDUCTOR 15E CORP » 1 7Tì7Q 7ti O O DS Qf l l - f '3 3 - 1 3 2SD1400 NPN Triple Diffused Planar Silicon Transistor 2022 Color TV Horizontal Deflection Output Applications 1267B Features: • High brea k d o w n voltage and h i g h reliability

MT940

Abstract: MFP-6
Contextual Info: New Product Low On-Resistance Power MOSFETs SAfiYO Low on-resistance Power MOSFETs J-MOS:VDSS:12V/20V/30V Series Sanyo Power MOSFETs TJ-MOS Seriesj meet the market needs of lower voltage drive and miniaturi zed surface mounting devices. Therefore, Sanyo Power MOSFETs fJ —MOS Seriesj are the most suited devices for notebook PCs, handy phones ,

hp 30d8 Temperatures

Abstract: LA7320 LA7322 DIP30S LA7321 T31A 3SK22 10KF6 head preamp T-19-A
Contextual Info: SANYO SEMICONDUCTOR CORP S3E J> • 7 W 0 7 b 0010020 T3Ô « T S A J T -7 7 'O r -O ^ I _ LA7322 No - / Monol i t hi c Linear IC / / Single-Chip fIQ Luminance Signal Processor TENTATIVE Tlie LA7322 is a single-chip HQ High Quality VTR lum inance signal processor IC th a t contains a detail

2SC930

Abstract: transistor 2SC930 2SC930NP 2SC2839 2SC930SPA 2SC930 D
Contextual Info: SANYO SEMICONDUCTOR CORP l^ifir|~^?cn 7 0 7 b % 2SC930 D004141 r-s/'/5r T “ 3 2 03 3 í - | 7 NPN. Epitaxial Planar Silico n Transistor 200 3 A AM Converter, FM RF • IF Amp Applications 545E The 2SC930 has two types of packges SPA and NP. Use • FM RF amp, mixer, OSC, converter, and IF amplifier.

lt1038 replacement

Abstract: LT1004DS Julie Research Labs LT1029DS ultronix 105A rosemount 644 Allen-Bradley DC Link Capacitor shelf life LT1038 cermet microphone la 1201 sanyo
Contextual Info: Lirm Application Note 42 TECHNOLOGY j une 1991 Voltage Reference Circuit Collection Brian Huffman This application note is a guidebook of circuits featuring voltage reference ICs in various configurations. The cir­ cuits shown are both basic as well as complex and employ

4227t

Abstract: 2043A TRANSISTOR R 2453
Contextual Info: SANYO SEMICONDUCTOR CORP 2SD1914 NPN Epitaxial Planar Silico n Darlington Transistor 204 3 A - Driver Applications . 2453 Applications . Motor drivers, printer hammer drivers, relay drivers, voltage regulator control Features . Darlington connection . High DC current gain

DS-17 SANYO

Contextual Info: Ordering number: ENN7020~| P-Channel Silicon MOSFET FTD1014 Load Switching Applications Package Dimensions Features • L ow O N -resistance. unit : mm • 2 .5 V drive. 2155 A • M ounting height 1.1mm. [FTD1014] • C om p osite type, facilitating high-density m ounting.

25K222

Abstract: 2SK222 sfx10
Contextual Info: Ordering n u m b e r:E N 836G 2SK222 N-Channel Junction Silicon FET Low-Frequency, Low-Noise Amp Applications F e a tu re s • Ultralow noise figure. • Large I y fB I . • Low gate leakage current. A bsolute M axim um R atin g s a tT a = 25°C Drain-to-Source Voltage

Contextual Info: 2SJ316 2062 LD L o w D rive S eries V DSs := 1 2 V P Channel Power M OSFET F e a tu re s •Low O N resistance. • Very high-speed switching. • Low-voltage drive. A b s o l u t e M a x i m u m R a t i n g s a t T a = 25°C D rain to Source Voltage V DSS

transistor d 1825 7c

Abstract: BU406
Contextual Info: SANYO SEMI CON DUCTOR CORP IB E D I BU406. 407 Tn?07b D00S4flti T ' 3 3 - / / NPN Epitaxial Planar Silicon Transistors 2010A C R T Horizontal Output Applications 1. Structure: Silicon NPN epitaxial planar transistor 2. Package: JEDEC: TO-220AB 3. Use: CRT display horizontal deflection output

transistor T K 2056

Abstract: K 2056 transistor transistor K 2056
Contextual Info: SANYO SEMICONDUCTOR 12E CORP D | 7 T ci 7 D 7 t 1 0 0 0 S S 0 0 g 32S C 4256 SS2SC4271 Silicon Transistor Silicon Transistor ' High Voltage Switching Applications Very High-Oefinrtion CR T Display Applications JEDEC: T 022 0 package JEDEC: T0126 package High breakdown voltage