DS 0,5 800 Search Results

2SK2294

Abstract: 481J1
Contextual Info: Transistors Switching 800V, 3A 2SK2294 •F e a tu re s ^External dim ensions (Units: mm) 1 ) Low on-resistance. 2) High-speed switching. 3) W ide SOA (safe operating area). 4) G ate-so urce v o lta g e g u ara ntee d at V gss = ± 3 0 V . 5 ) Easi ly designed d rive circu its.

siemens Pm 90 87

Abstract: PC 3131
Contextual Info: S IE M E N S CLX34 HiRelX-Band GaAs Power-MESFET • HiRel Discrete and Microwave Semiconductor • For professional power amplifiers • For frequencies from 500 MHz to 10 GHz • Hermetically sealed microwave power package • Low thermal resistance for

semikron SKFT 150

Abstract: Semipack 1 skfh skfh semikron thyristor Semipack skfh semikron
Contextual Info: VDRM VRRM tq Tvj = 125 °C ITRMS (maximum values for continuous operation) 350 A V µs 800 15 20 SKFT 150/08 DS SKFT 150/08 DT 1000 15 SKFT 150/10 DS 1) ITAV (sin. 180; Tcase = 76 °C; 50 Hz) 150 A SKFH 150/08 DS SKFH 150/08 DT SEMIPACK 3 Fast Thyristor/ Diode

2CSC400002D0903

Abstract: 2CSG210200R1211 ABB E 257 C30-230 S465502 2CSG035100R1211 2CSG210100R1211 ABB SACE sn 125 EA1733 LCD TV SCHEMA S550284
Contextual Info: Catalogo tecnico System pro M compact System pro M Interruttori magnetotermici, differenziali e apparecchi modulari per impianti in bassa tensione System pro M compact® - System pro M Per tener conto dell’evoluzione delle Norme e dei materiali, le caratteristiche e le dimensioni di ingombro indicate nel presente

SJ 76 A DIODE

Contextual Info: A D VA NC E D POWER TECHNOLOGY 4SE D • 0 557^01 O OD OS ' l b 3 GS *A V P ad va n ced ^■1 T F -P a c k C F > W ä j P O W E r n R > ? : _ ech n o lo g y APT8030CFN 800V 29.0A 0.30, P APT7530CFN 750V 29.0A 0.30 i2 POWER MOS IV N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFEJS

Contextual Info: 15E D I SEMI KRÖN INC Û l3 b b ? l 00Û15Q3 T se MIKRD n { Vdrm Vrrm It r m s tq L -z > - c ~ * t> _ maximum values for continuous operation 350 A 350 A (Tvj = 125 °C) - Ita v (sin. 180;Tcase = 76 °C; 50 Hz) V US 150 A 150 A 800

semikron SKFT 150

Contextual Info: 3bE D : SEMIKRON INC • a i 3 bb?l Q Q Q 2 3 5G S M S E K G -ras-^ Vdrm V rrm Tv| = 125 °C Itrms (maximum values for continuous operation) 350 A 350 A Itav (sin. 180; Tease = 76°C; 50 Hz) 150 A 150 A V US 800 15 20 SKFT 150/08 DS SKFT 150/08 DT SKFH 150/08 DS

802R4BN

Abstract: 752r 802R4 APT752R4BN APT752R8BN APT802R4BN APT802R8BN
Contextual Info: A D V A N C ED PO W ER Te c h n o l o g y O D APT802R4BN APT752R4BN APT802R8BN APT752R8BN O S POWER MOS IVe 800V 750V 800V 750V 5.5A 5.5A 5.0A 5.0A 2.40Q 2.40Q 2.80Q 2.80Í2 N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: Tr = 25°C unless otherwise specified.

buz 90 af

Contextual Info: ÖÖD D • 88D fl23SbQS 0014034 1 ■ S I E ß 14834 D T ’' ?>Ct '~ ! 3 BUZ 88 A SIEMENS AKTIEN6ESELLSCHAF _ Main ratings N-Channel = 800 V Draln-source voltage KlS » 5A Continuous drain current 1D Drain-source on-resistance ^DS on = 1,5 £2

Contextual Info: f - Silicon N Channel M O SFET Tetrode 3SE D • 31 BF 989 &53b35Q OOlbTfl? 1 ■ S I P SIEMENS/ S P CL i SEMICONDS For amplifier and mixer stages in UHF and VHF TV tuners Low Input and output capacitance Type Marking Ordering code for versions In bulk Ordering code for

Contextual Info: T - 3 I- 0 .3 T Silicon N Channel MOSFET Tetrode 32E D • fl23b320 OQLbflL? b BF 996 S I S IP SIEMENS/ SPCL-, SEMICONDS • • • For input stages in UHF TV tuners High transconductance Low noise figure Type Marking Ordering code for versions in bulk BF 996 S

Contextual Info: 2SK1663-L,S N-channel MOS-FET F-I Series 800V > Features - 4Ω 3A 80W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage > Applications - Switching Regulators UPS DC-DC Converters General Purpose Power Amplifier

Contextual Info: s e M IKRO n Absolute Maximum Ratings Sym bol V ds V dgr Id Idm V gs Conditions ' Rgs = 20 kQ Visol humidity climate Units 800 V 800 V 36 144 A A ±20 V 700 W - 5 5 . . .+150 °C 2 500 V Pd Tj, Tstg Values A C , 1 min DIN 40 040 DIN IEC 68 T.1 55/150/56 A

Contextual Info: A dvanced P ow er Te c h n o l o g y O D U/ O S APT8075SN Ù 800V 13.0A 0.75Q POWER MOS IV® N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS All Ratings: Tc = 25°C unless otherwise specified. Parameter Drain-Source Voltage

2N3823

Abstract: 2N3822 2N3823 equivalent 2N3821 2N3822 equivalent 2n 3821 2n EQUIVALENT
Contextual Info: 2N3821 2N 3 8 2 2 2N3 8 2 3 FIELD EFFECT TRANSISTO RS, SILICON, N CH ANN EL T R A N SIST O R S A E F F E T D E CHAMP, SILICIU M , C A N A L N HF amplification IDSS 0,5 • 2,5 mA 2- 10 mA 4 - 20 mA 2N 3821 2N 3822 2N 3823 Y21 s 1.5 - 4,5 mS 3 - 6,5 mS 3.5 • 6,5 mS

Contextual Info: 5SDD 10T1800 5SDD 10T1800 Old part no. D 806C-1010-18 Rectifier Diode Properties Industry standard housing Suitable for parallel operation High operating temperature Low forward voltage drop Key Parameters V RRM = 1 800 I FAVm = 1 013 I FSM = 13 500 V TO = 0.934

5SDD10T1800

Abstract: 5SDD 10T1800 5SDD10T1600 KA-241 10T16
Contextual Info: 5SDD 10T1800 5SDD 10T1800 Old part no. D 806C-1010-18 Rectifier Diode Properties § Industry standard housing § Suitable for parallel operation § High operating temperature § Low forward voltage drop Key Parameters = 1 800 V RRM = 1 013 I FAVm = 13 500

BF 22 W

Contextual Info: BF 543 Silicon N-Channel MOSFET Triode 3
For high-frequency stages up to 300 MHz preferably in FM applications
ISDD = 4mA, g fs = 12mS 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BF 543 LDs Pin Configuration

rft katalog

Abstract: transistor vergleichsliste dl 8205 VEB mikroelektronik mikroelektronik RFT "halbleiterwerk frankfurt" DL074D katalog rft TRANSISTOR KATALOG rft mikroelektronik
Contextual Info: [fin ] D[k ä rä fs J E I S l n b r 1! Bipolare digitale Schaltkreise Low -Pow er-S chottky-TTL S c h o ttky -T T L -In te rfa c e -S e rie n il- c Bipolare digitale Schaltkreise Low-Power-Schottky-TTL Sch ott ky-TTL-l nterf a ce-Se r ie Vorwort Der vorliegende Katalog ist vor allem für Konstrukteure und Geräteentwickler

D291S45T

Abstract: 1000A2 fast diode 1461 fast 1000V 1000A
Contextual Info: Technische Information / Technical Information Schnelle Gleichrichterdiode Fast Diode D 1461 S 35 . 45 T S Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / Maximum rated values Periodische Spitzensperrspannung repetitive peak reverse voltage

skfh150

Contextual Info: se MIKRD n V drm tq Itrm s maximum values for continuous operation V rrm (Tv| = 125 °C) 350 A V (is 800 15 20 SKFT 150/08 DS SKFT 150/08 DT 1000 15 SKFT 150/10 DS 1) Ita v (sin. 180; Tease = 76 °C; 50 Hz) 150 A SKFH 150/08 DS SKFH 150/08 DT SEMIPACK 3

CLY32

Abstract: CLY32-00 CLY32-05 CLY32-10
Contextual Info: CLY32 HiRel C-Band GaAs Power-MESFET • HiRel Discrete and Microwave Semiconductor • For professional power amplifiers • For frequencies from 100 MHz to 6 GHz • Hermetically sealed microwave power package • • Low thermal resistance for high voltage application

ECC802S

Abstract: 12AU7 12AU7WA ecc 802 telefunken tubes ecc 802 tube 12AU7W telefunken triode 6189 12au7wa
Contextual Info: Netzröhre für GW-Heizung indirekt geheizt Parallelspeisung DC-AC-Heating indirectly heated connected in parallel ECC 802 S TELEFUNKEN 6189 D o p p e ltrio d e Tw in trio d e Z u ve rlässigk eit Der P-Faktor g ib t den voraussichtlichen Röhren­ a u sfa ll in Prom ille je 1000 Std. an. Er lie g t bei

BdP 285

Abstract: bdp 286 BDP286 BDP285 BUCP-52 BDP396 BDP 284 BP469 BC-148 BDP495
Contextual Info: TRANZYSTORY Wykaz oznaczert parametrów technicznych CCBO C12es C12ss t p fT P h2le XB pojemnoóò kolektor - baza pojemnoóé sprzgzenia zwrotnego w ukladzie wspòlnego «altera /OE/ pojemnosé sprzeienia zwrotnego w ukladzie wspòInego iródta /OS/ oziatotiiwoàé pomiarowa